sfh 4250s ir-lumineszenzdiode (850 nm) mit hoher ausgangsleistung high power infrared emitter (850 nm) lead (pb) free produc t - rohs compliant 2011-03-10 1 vorl?ufige daten / preliminary data wesentliche merkmale ? infrarot led mit sehr hoher ausgangsleistung ? kurze schaltzeiten anwendungen ? infrarotbeleuchtung fr kameras ? ir-datenbertragung ? sensorik sicherheitshinweise je nach betriebsart emi ttieren diese bauteile hochkonzentrierte, nicht sichtbare infrarot- strahlung, die gef?hrlich fr das menschliche auge sein kann. produkte, die diese bauteile enthalten, mssen gem?? den sicherheits- richtlinien der iec-normen 60825-1 und 62471 behandelt werden. typ type bestellnummer ordering code strahlst?rkegruppierung 1) ( i f = 70 ma, t p = 20 ms) radiant intensity grouping 1) i e (mw/sr) sfh 4250s Q65111A0128 12.5 (typ. 22) 1) gemessen bei einem raumwinkel = 0.01 sr / measured at a solid angle of = 0.01 sr features ? high power infrared led ? short switching times applications ? infrared illumination for cameras ? ir data transmission ? optical sensors safety advices depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. products which incorporate these devices have to follow the safety precautions given in iec 60825-1 and iec 62471.
2011-03-10 2 sfh 4250s grenzwerte ( t a = 25 c) maximum ratings bezeichnung parameter symbol symbol wert value einheit unit betriebs- und lagertemperatur operating and storage temperature range t op , t stg ? 40 + 85 c sperrspannung reverse voltage v r 5 v vorw?rtsgleichstrom forward current i f 70 ma sto?strom, t p = 100 s, d = 0 surge current i fsm 700 ma verlustleistung power dissipation p tot 245 mw w?rmewiderstand sperrschicht - umgebung bei montage auf fr4 platine, padgr??e je 16 mm 2 thermal resistance junction - ambient mounted on pc-board (fr4), padsize 16 mm 2 each w?rmewiderstand sperrschicht - l?tstelle bei montage auf metall-block thermal resistance junc tion - soldering point, mounted on metal block r thja r thjs 300 140 k/w k/w kennwerte ( t a = 25 c) characteristics bezeichnung parameter symbol symbol wert value einheit unit wellenl?nge der strahlung wavelength at peak emission i f = 70 ma peak 860 nm centroid-wellenl?nge der strahlung centroid wavelength i f = 70 ma centroid 850 nm spektrale bandbreite bei 50% von i max spectral bandwidth at 50% of i max i f = 70 ma ? 42 nm abstrahlwinkel half angle ? 60 grad deg. aktive chipfl?che active chip area a 0.09 mm 2
sfh 4250s 2011-03-10 3 abmessungen der aktiven chipfl?che dimension of the active chip area l b l w 0.3 0.3 mm2 schaltzeiten, i e von 10% auf 90% und von 90% auf 10%, bei i f = 70 ma, r l = 50 switching times, e from 10% to 90% and from 90% to 10%, i f = 70 ma, r l = 50 t r , t f 20,10 ns durchlassspannung forward voltage i f = 70 ma, t p = 20 ms i f = 700 ma, t p = 100 s v f v f 3 ( < 3.5) 4 (< 5.2) v v sperrstrom reverse current i r not designed for reverse operation a gesamtstrahlungsfluss total radiant flux i f = 70 ma, t p = 20 ms e typ 70 mw temperaturkoeffizient von i e bzw. e , i f = 70 ma temperature coefficient of i e or e , i f = 70 ma tc i ? 0.5 %/k temperaturkoeffizient von v f , i f = 70 ma temperature coefficient of v f , i f = 70 ma tc v ? 2 mv/k temperaturkoeffizient von , i f = 70 ma temperature coefficient of , i f = 70 ma tc + 0.3 nm/k kennwerte ( t a = 25 c) characteristics (cont?d) bezeichnung parameter symbol symbol wert value einheit unit
2011-03-10 4 sfh 4250s abstrahlcharakteristik radiation characteristics i rel = f ( ? ) strahlst?rke i e in achsrichtung 1) gemessen bei einem raumwinkel = 0.01 sr radiant intensity i e in axial direction at a solid angle of = 0.01 sr bezeichnung parameter symbol werte values einheit unit sfh 4250s -r2 sfh 4250s -s sfh 4250s -t strahlst?rke radiant intensity i f = 70 ma, t p = 20 ms i e min i e max 12.5 20 16 32 25 50 mw/sr mw/sr strahlst?rke radiant intensity i f = 700 ma, t p = 25 s i e typ 125 185 290 mw/sr 1) nur eine gruppe in einer verpackungs einheit (streuung kleiner 2:1) / only one bin in one packing unit (variation lower 2:1) 0 0.2 0.4 1.0 0.8 0.6 ? 1.0 0.8 0.6 0.4 0? 10? 20? 40? 30? ohl01660 50? 60? 70? 80? 90? 100? 0? 20? 40? 60? 80? 100? 120?
sfh 4250s 2011-03-10 5 relative spectral emission i rel = f ( ) forward current i f = f ( v f ) single pulse, t p = 100 s 700 0 nm % ohf04135 20 40 60 80 100 950 750 800 850 i rel 1 10 100 1000 2345 v f [v] i f [ma] radiant intensity single pulse, t p = 25 s permissible pulse handling capability i f = f ( ), t a = 25 c, duty cycle d = parameter i e i e 70 ma = f ( i f ) 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+00 1.e+01 1.e+02 1.e+03 i f [ma] i e / i e(70ma) . 10 10 0 -2 -3 -4 -5 10 10 10 f i a p t = d t 2 1 0 -1 10 t p 10 s 10 ohf04490 t t p i f 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.75 0.02 0.1 0.05 0.5 0.2 1 0.01 0.005 d = max. permissible forward current i f = f ( t a ), r thja = 300 k/w permissible pulse handling capability i f = f ( ), t a = 85 c, duty cycle d = parameter 0 10 20 30 40 50 60 70 80 0 20406080100 t a [c] i f [ma] 10 10 0 -2 -3 -4 -5 10 10 10 f i a p t = d t 2 1 0 -1 10 t p 10 s 10 ohf04491 t t p i f 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.75 0.02 0.1 0.05 0.5 0.2 1 0.01 0.005 d =
2011-03-10 6 sfh 4250s ma?zeichnung package outlines ma?e in mm (inch) / dimensions in mm (inch). geh?use / package power topled ? , klarer verguss / power topled ? , clear resin anschlussbelegung pin configuration kathode: abgeschr?gte ecke cathode: beveled edge
sfh 4250s 2011-03-10 7 empfohlenes l?tpaddesign reflow l?ten recommended solder pad design reflow soldering empfohlenes l?tpaddesign wellenl?ten ttw recommended solder pad design ttw soldering ohfp3021 padgeometrie fr verbesserte w?rmeableitung improved heat dissipation paddesign for l?tstoplack solder resist 0.8 (0.031) 3.7 (0.146) 1.1 (0.043) 2.3 (0.091) 3.3 (0.130) 1.5 (0.059) 11.1 (0.437) cu fl?che / 16 mm per pad 2 cu-area _ < 3.3 (0.130) 0.7 (0.028) ohpy3040 6.1 (0.240) 2.8 (0.110) 2 (0.079) 3 (0.118) 6 (0.236) 2 (0.079) 1 (0.039) 2.8 (0.110) 0.5 (0.020) solder resist l?tstoplack pcb-direction bewegungsrichtung der platine 2 (0.079) padgeometrie fr improved heat dissipation verbesserte w?rmeableitung paddesign for 2 cu fl?che / > 16 mm per pad cu-area
2011-03-10 8 sfh 4250s l?tbedingungen vorbehandlung nach jedec level 2 soldering conditions preconditioning acc. to jedec level 2 reflow l?tprofil fr bleifreies l?ten (nach j-std-020-d.01) reflow soldering profile for lead free soldering (acc. to j-std-020-d.01 ) pb-free (snagcu) assembly profile feature recommendation max. ratings ramp-up rate to preheat* ) 25c to 150c 2k / sec 3k / sec time t s from t smin to t smax (150c to 200c 100s min. 60sec max. 120sec ramp-up rate to peak* ) t smax to t p 2k / sec 3k / sec liquidus temperture t l 217c time t l above t l 80sec max. 100sec peak temperature t p 245c max. 260c time t p within 5c of the specified peak temperature t p - 5k 20sec min. 10sec max. 30sec ramp-down rate* t p to 100c 3k / sec 6k / sec maximum time 25c to peak temperature max. 8 min. all temperatures refer to the center of th e package, measured on the top of the component * slope calculation t/ t: t max. 5 sec; fulfillment for the whole t-range 0 0 s oha04525 50 100 150 200 250 300 50 100 150 200 250 300 t t ?c s t t p t t p 240 ?c 217 ?c 245 ?c 25 ?c l
sfh 4250s 2011-03-10 9 wellenl?ten (ttw) (nach cecc 00802) ttw soldering (acc. to cecc 00802) published by osram opto semico nductors gmbh leibnizstra?e 4, d-93055 regensburg www.osram-os.com ? all rights reserved. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserv ed. due to technical requirements components may contain dangerous substances. for information on the types in question please contact our sales organization. packing please use the recycling operators known to you. we can also help you ? get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of tr ansport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or system s must be expressly authorized for such purpose! critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of osram os. 1 a critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support de vice or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be impl anted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be endangered. ohly0598 0 0 50 100 150 200 250 50 100 150 200 250 300 t t c s 235 c 10 s c ... 260 1. welle 1. wave 2. welle 2. wave 5 k/s 2 k/s ca 200 k/s cc ... 130 100 2 k/s zwangskhlung forced cooling normalkurve standard curve grenzkurven limit curves
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