transistor(pnp) features ? small surface mount package ? complementary t o mmsta42 ? ideal f or medium power amplification a nd switching marking:k 3r m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage - 310 v v ceo collector - emitter voltage - 305 v v ebo emitter - base voltage - 5 v i c collector current - 300 m a p c collector power dissipation 200 m w r ja thermal resistance f rom j u nction to a mbient 625 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown volt age v (br) cbo i c = - 1 0 0 a , i e =0 - 310 v collector - emitter breakdown voltage v (br) c e o i c = - 1 ma, i b =0 - 305 v emitter - base breakdown voltage v (br)eb o i e = - 1 0 0 a , i c =0 - 5 v collector cut - off current i cbo v cb = - 200 v, i e =0 - 250 n a v c e = - 200 v, i b =0 - 250 n a collector cut - off curre nt i c e o v c e = - 300 v, i b =0 - 5 a emitter cut - off current i eb o v eb = - 5 v, i c =0 - 100 n a v ce = - 10 v, i c = - 1m a 60 v ce = - 10 v, i c = - 10m a 100 200 dc current gain h fe v ce = - 10 v, i c = - 30m a 60 collector - emitter saturation voltage v ce(sat) i c = - 20 m a, i b = - 2 ma - 0 .2 v base - emitter saturation voltage v b e(sat) i c = - 20m a, i b = - 2 ma - 0.9 v transition frequency f t v ce = - 20 v,i e = - 10 ma , f= 3 0 mhz 50 mhz collector output capacitance c ob v cb = - 20 v, i e =0, f =1mhz 6 pf so t C 3 23 1. base 2. emitter 3. collector MMSTA92 1 date:2011/05 www.htsemi.com semiconductor jinyu
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