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parameter maximum units i d @ t a = 25c continuous drain current, v gs @ -10v -3.4 a i d @ t a = 70c continuous drain current, v gs @ -10v -2.7 i dm pulsed drain current -27 p d @t a = 25c power dissipation 2.0 w p d @t a = 70c power dissipation 1.3 linear derating factor 16 mw/c v gs gate-to-source voltage 20 v t j, t stg junction and storage temperature range -55 to +150 c co-packaged hexfet ? power mosfet and schottky diode ideal for buck regulator applications p-channel hexfet ? low v f schottky rectifier so-8 footprint lead-free IRF5803D2PBF fetky mosfet & schottky diode absolute maximum ratings (t a = 25c unless otherwise noted) description v dss = -40v r ds(on) = 112m ? schottky vf = 0.51v the fetky tm family of co-packaged hexfets and schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. hexfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics. the so-8 package is designed for vapor phase, infrared or wave soldering techniques. top view 8 1 2 3 4 5 6 7 a a s g d d k k notes: repetitive rating ? pulse width limited by max. junction temperature (see fig. 11) pulse width 400s ? duty cycle 2% surface mounted on 1 inch square copper board, t 10sec. so-8 symbol parameter typ. max. units r jl junction-to-drain lead, mosfet ??? 20 r ja junction-to-ambient , mosfet ??? 62.5 c/w thermal resistance www.irf.com 1 r ja junction-to-ambient , schottky ??? 62.5 pd- 95160a

2 www.irf.com parameter min. typ. max. units conditions i s continuous source current (body diode) ??? ??? -2.0 i sm pulsed source current (body diode) ??? ??? -27 v sd body diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -2.0a, v gs = 0v t rr reverse recovery time (body diode) ??? 27 40 ns t j = 25c, i f = -2.0a q rr reverse recovery charge ??? 34 50 nc di/dt = 100a/s mosfet source-drain ratings and characteristics parameter max. units conditions if (av) max. average forward current 3.0 50% duty cycle. rectangular waveform, t a =30c see fig.21 i sm max. peak one cycle non-repetitive 340 5s sine or 3s rect. pulse following any rated surge current 70 10ms sine or 6ms rect. pulse load condition & with vrrm applied schottky diode maximum ratings parameter max. units conditions vfm max. forward voltage drop 0.51 if = 5.0a, tj = 25c 0.63 if = 10a, tj = 25c 0.44 if = 5.0a, tj = 125c 0.59 if = 10a, tj = 125c vrrm max. working peak reverse voltage 40 irm max. reverse leakage current 3.0 ma vr = 40v tj = 25c 37 tj = 125c schottky diode electrical specifications parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -40 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.03 ??? v/c reference to 25c, i d = -1ma ??? ??? 112 v gs = -10v, i d = -3.4a ??? ??? 190 v gs = -4.5v, i d = -2.7a v gs(th) gate threshold voltage -1.0 ??? -3.0 v v ds = v gs , i d = -250a g fs forward transconductance 4.0 ??? ??? s v ds = -10v, i d = -3.4a ??? ??? -10 v ds = -32v, v gs = 0v ??? ??? -25 v ds = -32v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -20v gate-to-source reverse leakage ??? ??? 100 v gs = 20v q g total gate charge ??? 25 37 i d = -3.4a q gs gate-to-source charge ??? 4.5 6.8 nc v ds = -20v q gd gate-to-drain ("miller") charge ??? 3.5 5.3 v gs = -10v, see fig. 6 & 14 t d(on) turn-on delay time ??? 43 65 v dd = -20v t r rise time ??? 550 825 i d = -1.0a t d(off) turn-off delay time ??? 88 130 r g = 6.0 ? t f fall time ??? 50 75 v gs = -10v, c iss input capacitance ??? 1110 ??? v gs = 0v c oss output capacitance ??? 93 ??? pf v ds = -25v c rss reverse transfer capacitance ??? 73 ??? ? = 100khz, see fig. 5 electrical characteristics @ t j = 25c (unless otherwise specified)
m ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current ct max. junction capacitance 405 pf vr = 5vdc ( 100khz to 1 mhz) 25c

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power mosfet characteristics 0.1 1 10 100 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v = -25v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -3.4a 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -2.7v 20s pulse width tj = 25c vgs top -15v -10v -4.5v -3.7v -3.5v -3.3v -3.0v bottom - 2.7v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -2.7v 20s pulse width tj = 125c vgs top -15v -10v -4.5v -3.7v -3.5v -3.3v -3.0v bottom - 2.7v

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage power mosfet characteristics 1 10 100 v ds , drain-to-source voltage (v) 0 500 1000 1500 2000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 100 khz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 5 10 15 20 25 30 0 2 4 6 8 10 12 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -3.4a v = -20v ds v = -32v ds 0.1 1 10 100 0.4 0.8 1.2 1.6 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 -v ds , drain-tosource voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c t j = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec

www.irf.com 5 power mosfet characteristics fig 9. maximum drain current vs. case temperature
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0.1 % + - v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-ambient 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , case temperature ( c) -i , drain current (a) c d

6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v d s i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - power mosfet characteristics 0.0 5.0 10.0 15.0 -i d , drain current ( a ) 0.00 0.10 0.20 0.30 0.40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) vgs = -4.5v vgs = -10v 4.0 8.0 12.0 16.0 -v gs, gate -to -source voltage (v) 0.00 0.05 0.10 0.15 0.20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -3.4a

www.irf.com 7 fig 15. typical vgs(th) vs. junction temperature power mosfet characteristics fig 16. typical power vs. time -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.6 2.0 2.4 2.8 - v g s ( t h ) ( v ) i d = -250a 0.001 0.010 0.100 1.000 10.000 100.000 time (sec) 0 5 10 15 20 25 30 p o w e r ( w )

8 www.irf.com schottky diode characteristics fig. 18 - typical values of reverse current vs. reverse voltage fig. 17 - maximum forward voltage drop characteristics 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2 .2 instantaneous forward current - i (a) f fm forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j 0.001 0.01 0.1 1 10 100 0 5 10 15 20 25 30 35 4 0 r r 125c 100c 75c 50c 25c reverse current - i (ma) t = 150c j reverse voltage - v (v) 100 1000 0 5 10 15 20 25 30 35 40 4 5 r t junction capacitance - c (pf) reverse voltage - v (v) t = 25c j fig. 19 - typical junction capacitance vs. reverse voltage

www.irf.com 9 fig.21 - maximum allowable ambient temp. vs. forward current fig 20. maximum effective transient thermal impedance, junction-to-ambient schottky diode characteristics 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) note (4) formula used: t c = t j - (pd + pd rev ) x r thja ; pd = forward power loss = i f(av) x v fm @ (i f(av) / d) ; pd rev = inverse power loss = v r1 x i r (1 - d); i r @ v r1 = 80% rated v r 0 1 2 3 4 5 6 average forward current - i f(av) (a) 0 20 40 60 80 100 120 140 160 180 a l l o w a b l e a m b i e n t t e m p r a t u r e - ( c ) s quare wave ( d = 0.50) 80 % rated v r applied dc see note (4) r thja = 62.5 c/w

10 www.irf.com e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max mi l l i me t e r s inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l ine conf or ms t o je de c ou t l ine ms -012aa. not e s : 1. dimens ioning & t ole rancing pe r as me y14.5m-1994. 2. controlling dimension: millimeter 3. dimens ions are s hown in millimeters [inches ]. 5 dimens ion doe s not incl ude mold prot rus ions . 6 dimens ion doe s not incl ude mold prot rus ions . mold prot rus ions not t o exceed 0.25 [.010]. 7 dimension is the length of lead for soldering to a s ubs t rat e. mold prot rus ions not t o exceed 0.15 [.006]. 8x 1.78 [.07 0] so-8 (fetky) package outline

rect ifier logo int ernat ional example: this is an irf7807d1 (fetky) xxxx 807d1 y = last digit of the year a = assembly site code ww = week lot code product (optional) p = disgnates lead - free dat e code (yww) part number so-8 (fetky) part marking information

www.irf.com 11 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/04 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters(inches). 3 . outline conforms to eia-481 & eia-541. so-8 (fetky) tape and reel

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