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| inchange semiconductor isc product specification isc silicon pnp power transistors 2SB722 description collector-emitter breakdown voltage- : v (br)ceo = -160v(min) high power dissipation- : p c = 150w(max)@t c =25 high current capability applications designed for power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -160 v v ceo collector-emitter voltage -160 v v ebo emitter-base voltage -5 v i c collector current-continuous -15 a i b b baser current-continuous -4 a p c collector power dissipation @t c =25 150 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistors 2SB722 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -25ma; i b = 0 -160 v v (br)ebo emitter-base breakdown voltage i e = -1ma; i c = 0 -5 v v (br)cbo collector-base breakdown voltage i c = -1ma; i e = 0 -160 v v ce (sat) collector-emitter saturation voltage i c = -10a; i b = -1a -3.0 v v be (on) base-emitter on voltage i c = -2a; v ce = -5v -1.5 v i cbo collector cutoff current v cb = -160v; i e = 0 -0.1 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -0.1 ma h fe dc current gain i c = -1a; v ce = -5v 50 isc website www.iscsemi.cn |
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