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| pin diode features z high voltage, current controlled z rf resistor for rf attenuators and switches z low diode capacitance z low diode forward resistance z low series inductance z for applications up to 3 ghz z rf attenuators and switches marking: 5 k maximum ratings @t a =25 parameter symbol limits unit continuous reverse voltage v r 175 v continuous forward current i f 100 ma power dissipation p d 2 5 0 m w thermal resistance junction to ambient r ja 500 /w junction temperature t j 150 storage temperature t stg -65~+150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit reverse voltage leakage current i r v r =175v v r =20v 10 1 a forward voltage v f i f =50ma 1.1 v diode capacitance c d v r =0, f=1mhz v r =1v, f=1mhz v r =20v, f=1mhz 0.52 0.37 0.23 0.35 pf diode forward resistance r d i f =0.5ma, f=100mhz ;note1 i f =1ma, f=100mhz ;note1 i f =10ma, f=100mhz ;note1 i f =100ma, f=100mhz ;note1 20 10 2 0.7 40 20 3.8 1.35 ? charge carrier life time l when switched from i f = 10 ma to i r = 6 ma; r l = 100 ; measured at i r =3ma 1.55 s series inductance l s i f =100ma, f=100mhz 1.4 nh sot-23 note 1. guaranteed on aql basis: inspection level s4,aql 1.0. BAP64-05 1 www.htsemi.com semiconductor jinyu
2 www.htsemi.com semiconductor jinyu BAP64-05 |
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