fuji discrete package igbt n n features ? square rbsoa ? low saturation voltage ? less total power dissipation ? minimized internal stray inductance n n applications ? high power switching ? a.c. motor controls ? d.c. motor controls ? uninterruptible power supply n n outline drawing n n maximum ratings and characteristics ? absolute maximum ratings ( t c =25c ) items symbols ratings units collector-emitter voltage v ces 600 v gate -emitter voltage v ges 20 v dc t c = 25c i c 25 82 collector current dc t c =100c i c 100 50 a 1ms t c = 25c i c pulse 328 igbt max. power dissipation p c 310 w fwd max. power dissipation p c 140 w operating temperature t j +150 c storage temperature t stg -40 ~ +150 c mounting screw torque 70 nm ? electrical characteristics ( at t j =25c ) items symbols test conditions min. typ. max. units zero gate voltage collector current i ces v ge =0v v ce =600v 1.0 ma gate-emitter leackage current i ges v ce =0v v ge = 20v 20 a gate-emitter threshold voltage v ge(th) v ge =20v i c =50ma 5.5 8.5 collector-emitter saturation voltage v ce(sat) v ge =15v i c =50a 3.0 input capacitance c ies v ge =0v 3000 output capacitance c oes v ce =10v 650 pf reverse transfer capacitance c res f=1mhz 150 t on v cc =300v 1.2 t r i c =50a 0.6 t off v ge = 15v 1.0 switching time t f r g =62 w 0.35 t on v cc =300v 0.16 t r i c =50a 0.11 t off v ge =+15v 0.30 t f r g =6 w 0.35 diode forward on-voltage v f i f =50a v ge =0v 3.0 v reverse recovery time t rr i f =50a , v ge =-10v, di/dt=100a/ s 300 ns ? thermal characteristics items symbols test conditions min. typ. max. units r th(j-c) igbt 0.40 r th(j-c) diode 0.89 n n equivalent circuit turn-on time turn-on time turn-off time turn-off time thermal resistance v s s c/w
0 1 2 3 4 5 6 0 20 40 60 80 100 120 8v 10v 12v v ge =20v,15v collector current vs. collector-emitter voltage t j =25c collector current : i c [a] collector-emitter voltage : v ce [v] 0 1 2 3 4 5 6 0 20 40 60 80 100 120 8v 10v 12v v ge =20v,15v collector current vs. collector-emitter voltage t j =125c collector current : i c [a] collector-emitter voltage : v ce [v] 0 5 10 15 20 25 0 2 4 6 8 10 12 i c = 100a 25a 50a collector-emitter voltage vs. gate-emitter voltage t j =25c collector-emitter voltage : v ce [v] gate-emitter voltage : v ge [v] 0 5 10 15 20 25 0 2 4 6 8 10 12 i c = 100a 25a 50a collector-emitter voltage vs. gate-emitter voltage t j =125c collector-emitter voltage : v ce [v] gate-emitter voltage : v ge [v] 0 20 40 60 80 10 100 1000 t f t r t off t on switching time vs. collector current v cc =300v, r g =6.2 w , v ge =15v, t j =25c switching time : t on , t r , t off , t f [nsec] collector current : i c [a] 0 20 40 60 80 10 100 1000 t f t r t off t on switching time vs. collector current v cc =300v, r g =6.2 w , v ge =15v, t j =125c switching time : t on , t r , t off , t f [nsec] collector current : i c [a]
0 50 100 10 100 1000 t f t r t off t on switching time vs. r g v cc =300v, i c =50a, v ge =15v, t j =25c switching time : t on , t r , t off , t f [nsec] gate resistance : r g [ w ] 0 50 100 10 100 1000 t f t r t off t on switching time vs. r g v cc =300v, i c =50a, v ge =15v, t j =125c switching time : t on , t r , t off , t f [nsec] gate resistance : r g [ w ] 0 5 10 15 20 25 30 35 0,01 0,1 1 10 c res c oes c ies capacitance vs. collector-emitter voltage t j =25c capacitance : c oes , c res , c ies [nf] collector-emitter voltage : v ce [v] 0 50 100 150 200 250 300 0 100 200 300 400 500 collector-emitter voltage : v ce [v] gate charge : q g [nq] 0 5 10 15 20 25 v cc =200v, 300v, 400v gate-emitter voltage : v ge [v] dynamic input characteristics t j =25c 0 20 40 60 80 100 0 100 200 300 400 25c 125c reverse recovery time vs. forward current v r =200v, -di / dt =100a/sec reverse recovery time : t rr [nsec] forward current : i f [a] 0 20 40 60 80 100 0 5 10 15 25c 125c reverse recovery current vs. forward current v r =200v, -di / dt =100a/sec reverse recovery current : i rr [a] forward current : i f [a]
0 100 200 300 400 500 600 700 0 20 40 60 80 100 120 reverse biased safe operating area +v ge =15v, -v ge < 15v, t j < 125c, r g > 6.2 w collector current : i c [a] collector-emitter voltage : v ce [v] 5 10 15 20 25 0 100 200 300 400 500 600 t sc short circuit current : i sc [a] gate voltage : v ge [v] 0 10 20 30 40 50 60 short circuit time : t sc [s] i sc typical short circuit capability v cc =400v, r g =6.2 w , t j =125c 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 0 20 40 60 80 100 120 25c t j =125c forward voltage vs. forward current forward current : i f [a] forward voltage : v f [v] 0 100 200 300 400 500 t rr reverse recovery time : t rr [nsec] -di / dt [a/sec] 0 100 200 300 400 500 0 5 10 15 20 25 reverse recovery current : i rr [a] i rr reverse recovery characteristics vs. -di / dt i f =50a, t j =125c 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 igbt fwd transient thermal resistance thermal resistance : rth(j-c) [c/w] pulse width : p w [sec]
switching losses (e on , e off vs. i c ) test circuit switching waveforms p.o. box 702708-dallas, tx 75370 phone (972) 233-1589 fax (972) 233-0481 www.collmer.com i c [a]
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