STN4526 n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN4526 2007. v1 description STN4526 is the nchannel logic enhancement mode pow er field effect transistor which is produced using high cell density, dmos trench te chnology. this high density process is especially tailored to minimize onstate resistance. these devices are particularly suited for low voltage application suc h as power management and other battery powered circuits where highside switching. pin configuration sop-8 part marking y: year code a: process code ordering information part number package part marking STN4526 sop8p STN4526 process code : a ~ z ; a ~ z feature 40v/10.0a, r ds(on) = 25m (typ.) @v gs = 10v 40v/8.0a, r ds(on) = 31m @v gs = 4.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability sop8 package design
STN4526 n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN4526 2007. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drainsource voltage vdss 40 v gatesource voltage vgss 20 v continuous drain current (tj=150 ) ta=25 ta=70 id 10.0 8.0 a pulsed drain current idm 30 a continuous source current (diode conduction) is 2.3 a power dissipation ta=25 ta=70 pd 2.5 1.6 w operation junction temperature tj 150 storgae temperature range tstg 55/150 thermal resistancejunction to ambient rja 80 /w
STN4526 n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN4526 2007. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drainsource breakdown voltage v (br)dss v gs =0v,id=250ua 40 v gate threshold voltage v gs(th) v ds =v gs ,id=250ua 1.0 3.0 v gate leakage current i gss v ds =0v,v gs =20v 100 na zero gate voltage drain current i dss v ds =40v,v gs =0v 1 ua v ds =40v,v gs =0v t j =85 10 drainsource on resistance r ds(on) v gs =10v,i d =10a v gs =4.5v,i d =8a 25 31 m forward transconductance gfs v ds =15v,i d =6.2av 13 s diode forward voltage v sd i s =2.3a,v gs =0v 0.8 1.2 v dynamic total gate charge q g v ds =20v,v gs =4.5 i d 5a 10 14 nc gatesource charge q gs 2.8 gatedrain charge q gd 3.2 input capacitance c iss v ds =20v,vgs=0v f=1mhz 850 pf output capacitance c oss 110 reverse transfercapacitance c rss 75 turnon time t d(on) tr v dd =20v,r l = 4 i d =5.0a,v gen =10v r g =1 6 12 ns 10 20 turnoff time t d(off) tf 20 36 6 12 typical characterictics
STN4526 n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN4526 2007. v1
STN4526 n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN4526 2007. v1 typical characterictics
STN4526 n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN4526 2007. v1 package outline sop-8p
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