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semihow rev.plimilarydec 2009 SPGN0365A/spgp0365a - preliminary ? variable frequency operation ? low start - up current(typ.100ua ) ? pulse by pulse current limiting ? over current protection ? over voltage protection (min. 20) ? internal thermal shutdown function ? under voltage lockout ? internal high voltage sense fet ? auto - restart mode ? frequency modulation for low emi ? advanced burst - mode operation features spgp0365a/SPGN0365A ver : preliminary_2 ( semihow power switch ) dec 2009 application ? smps for stb, svr, dvd & dvcd ? smps for printer, facsimile & scanner ? adaptor the semihow power switch product family is specially designed for an off - line smps with minimal external components. the semihow power switch consists of a high voltage power sensefet and a current mode pwm ic. it has a basic platform well suited for the cost effective design in either a flyback converter description internal block diagram spgp0365a SPGN0365A
semihow rev.plimilarydec 2009 SPGN0365A/spgp0365a - preliminary symbol parameter value units v dss drain - source voltage 650 v i d drain current ? continuous (t c = 25 ) 3.0 a drain current ? continuous (t c = 100 ) 2.4 a i dm drain current ? pulsed (note 1) 12 a v gs gate - source voltage 30 v e as single pulsed avalanche energy (note 2) 248 mj v cc(max) maximum supply voltage 20 v v fb analog input voltage range - 0.3 to v sd v p d power dissipation (t c = 25 ) - derate above 25 75 w 0.6 w/ t j operating junction temperature +160 t a operating ambient temperature - 25 to +85 t stg storage temperature range - 55 to +150 spgp0365a SPGN0365A symbol parameter value units v dss drain - source voltage 650 v i d drain current ? continuous (t c = 25 ) 0.42 a drain current ? continuous (t c = 100 ) 0.28 a i dm drain current ? pulsed (note 1) 3 a v gs gate - source voltage 30 v e as single pulsed avalanche energy (note 2) 127 mj v cc(max) maximum supply voltage 20 v v fb analog input voltage range - 0.3 to v sd v p d power dissipation (t c = 25 ) - derate above 25 1.56 w 0.0125 w/ t j operating junction temperature +160 t a operating ambient temperature - 25 to +85 t stg storage temperature range - 55 to +150 notes : 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=51mh, i as =3.0a, v dd =50v, r g =25 ? absolute maximum ratings ta=25
semihow rev.plimilarydec 2009 SPGN0365A/spgp0365a - preliminary symbol parameter test conditions min typ max units r ds(on) static drain - source on - resistance v gs = 10 v, i d = 1.5 a -- 3.0 3.75 ? on characteristics bv dss drain - source breakdown voltage v gs = 0 v, i d = 50 ? 650 -- -- v i dss zero gate voltage drain current v ds = 650 v, v gs = 0 v -- -- 50 ? v ds = 520 v, t c = 125 -- -- 200 ? off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 450 580 ? c oss output capacitance -- 55 72 ? c rss reverse transfer capacitance -- 12 15.5 ? dynamic characteristics t d(on) turn - on time v ds = 325 v, i d = 3.0 a, r g = 25 ? (note 4,5) -- 18 -- ? t r turn - on rise time -- 15 -- ? t d(off) turn - off delay time -- 80 -- ? t f turn - off fall time -- 30 -- ? q g total gate charge v ds = 325v, i d = 3.0 a, v gs = 10 v (note 4,5) -- 13 17 nc q gs gate - source charge -- 2.5 -- nc q gd gate - drain charge -- 5.5 -- nc switching characteristics notes : 1. pulse test : pulse width 300s, duty cycle 2% 2. r s 1 = electrical characteristics ( sensefet part ) ta=25 c, unless otherwise specified
semihow rev.plimilarydec 2009 SPGN0365A/spgp0365a - preliminary symbol parameter test conditions min typ max units v start start threshold voltage v fb = gnd 14 15 16 v v stop stop threshold voltage v fb = gnd 8.4 9 9.6 v uvlo section f osc initial accuracy 57 64 71 khz -- frequency change with temperature (note 2) -25 c ta +85 c -- 5 10 % d max maximum duty cycle 73 77 82 % oscillator section i fb feedback source current ta=25 c, 0v< vfb <3v 0.7 0.9 1.1 ma v sd shutdown feedback voltage vfb >6.5v 5.4 6 6.6 v i delay shutdown delay current ta=25 c, 5v vfb v sd 4 5 6 ma feedback section reference section v ref reference output voltage (note 1) ta=25 c 4.8 5 5.2 v vref / ? t temperature stability (note 1 , 2) -25 c ta +85 c -- 0.3 0.6 mv/ c i over peak current limit max. inductor current 1.62 2.0 2.38 a protection section v ovp over voltage protection v cc > 20v 20 -- 23 v t sd thermal shutdown temperature (tj ) (note 1) -- 140 160 -- c protection section i start start - up current v cc = 14v -- 100 170 ? i op operating supply current (control part only) v cc < 20v -- 3 6 ma notes : 1. these parameters, although guaranteed, are not 100% tested in production 2. these parameters, although guaranteed, are tested in eds(water test) process electrical characteristics ( control part ) ta=25 c, unless otherwise specified
semihow rev.plimilarydec 2009 SPGN0365A/spgp0365a - preliminary typical characteristics ( sensefet part ) 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 v gs = 20v v gs = 10v ? note : t j = 25 o c r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0 3 6 9 12 15 0 2 4 6 8 10 12 v ds = 325v v ds = 130v v ds = 520v * note : i d = 3.0a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 200 400 600 800 1000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 10 0 10 1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v * notes : 1. 300us pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] (spgp0365a) 2 4 6 8 10 0.1 1 10 -25 o c 25 o c * notes : 1. v ds = 30v 2. 300us pulse test v gs , gate-source voltage [v] i d , drain current [a] 150 o c 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 25 o c * notes : 1. v gs = 0v 2. 300us pulse test v sd , source-drain voltage [v] i dr , reverse drain current [a] 150 o c
semihow rev.plimilarydec 2009 SPGN0365A/spgp0365a - preliminary 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d , drain current [a] t c , case temperature [ o c] typical characteristics ( sensefet part ) (continued) -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ? note : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 ? note : 1. v gs = 10 v 2. i d = 1.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] figure 7. breakdown voltage variation vs temperature figure 8. on - resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve (spgp0365a) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z jc (t) = 1.66 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] t 2 t 1 p dm 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v]
semihow rev.plimilarydec 2009 SPGN0365A/spgp0365a - preliminary typical characteristics ( sensefet part ) figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 0 200 400 600 800 1000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 10 0 10 1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250us pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] (SPGN0365A) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 25 o c 150 o c * note : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 3 6 9 12 15 0 2 4 6 8 10 12 v ds = 325v v ds = 130v v ds = 520v * note : i d = 3.0a v gs , gate-source voltage [v] q g , total gate charge [nc] 2 4 6 8 10 0.1 1 10 -55 o c 25 o c * notes : 1. v ds = 50v 2. 250us pulse test v gs , gate-source voltage [v] i d , drain current [a] 150 o c 0 1 2 3 4 5 6 7 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 ? note : t j = 25 o c r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] v gs = 10v v gs = 20v
semihow rev.plimilarydec 2009 SPGN0365A/spgp0365a - preliminary i d , drain current [a] v ds , drain - source voltage [v] typical characteristics ( sensefet part ) (continued) -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ? note : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 i d , drain current [a] t c , case temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 ? note : 1. v gs = 10 v 2. i d = 1.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] figure 7. breakdown voltage variation vs temperature figure 8. on - resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve t 2 t 1 p dm 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 10 1 10 2 * notes : 1. z jc (t) = 80 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] (SPGN0365A)
semihow rev.plimilarydec 2009 SPGN0365A/spgp0365a - preliminary typical performance characteristics ( control part ) (continued) (these characteristic graphs are normalized at ta=25 c ) figure 1. operating frequency figure 2. feedback source current -25 0 25 50 75 100 125 150 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 fosc -25 0 25 50 75 100 125 150 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 ifb -25 0 25 50 75 100 125 150 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 iop -25 0 25 50 75 100 125 150 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 vstart -25 0 25 50 75 100 125 150 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 vstop -25 0 25 50 75 100 125 150 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 vovp figure 3. operating supply current figure 4. start up current figure 5. start threshold voltage figure 6. stop threshold voltage figure 7. over voltage protection -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 istart
semihow rev.plimilarydec 2009 SPGN0365A/spgp0365a - preliminary package dimension
semihow rev.plimilarydec 2009 SPGN0365A/spgp0365a - preliminary

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