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11/2008 figure 1: block diagram f eatures ? internal reference voltage ? integrated power control ? ingap hbt technology ? esd protection on all pins (2.5 kv) ? low profle 1.0 mm ? small package outline 7 mm x 7 mm ? egprs capable (class 12) ? rohs compliant package, 250 o c msl-3 gmsk mode ? +35 dbm gsm850/900 output power ? +33 dbm dcs/pcs output power ? 55 % gsm850/900 pae ? 52 % dcs/pcs pae ? power control range > 50 db edge mode ? +29 dbm gsm850/900 output power ? +28.5 dbm dcs/pcs output power ? 29 % gsm850/900 pae ? 30 % dcs/pcs pae ? -64 dbc typical acpr (400 khz) ? -74 dbc typical acpr (600 khz) applic ations ? dual/tri/quad band handsets, pdas, and data devices product description this power amplifer module supports dual, tri and quad band applications for gmsk and 8-psk modu - lation schemes using an open loop polar architec - ture. there are two amplifer chains, one to support gsm850/900 bands, the other for dcs/pcs bands. each amplifcation chain is optimized for excellent edge effciency, power, and linearity in a polar loop environment while maintaining high effciency in the gsm/gprs mode. the module includes an internal reference voltage and integrated power control scheme for use in both gmsk and 8-psk operation. this facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. a wt6280 quad-band gsm/gprs/polar edge power amplifer module with integrated power control data sheet - rev 2.1 m11 package 18 pin 7 mm x 7 mm x 1.0 mm surface mount module the amplifers power control range is typically 55 db, with the output power set by applying an analog volt - age to v ramp . all of the rf ports for this device are dc blocked and internally matched to 50 ?. aw t6280r gsm850/900_in t x _e n dcs/pcs_in gsm850/900_ou t gsm850/900 bias/power control dcs/pcs_out dcs/pcs bs v ramp v batt c ext
2 a wt6280 data sheet - rev 2.1 11/2008 t able 1: pin description figure 2: pinout (x - ray t op view) gnd dcs/pcs_in bs t_ en x v batt v ramp gsm850/900_in dcs/pcs_out gsm850/900_out n/c 18 1 9 8 7 2 3 4 5 6 10 16 11 13 15 12 14 17 c ext gnd gnd gnd gnd gnd gnd gnd pin name description pin name description 1 dcs/pcs_in dcs/pcs rf input 10 gsm850/900_out gsm850/900 rf output 2 bs band select logic input 11 gnd ground 3 tx_en tx enable logic input 12 gnd ground 4 v batt battery supply connection 13 n/c no connection. do not ground 5 c ext bypass 14 gnd ground 6 v ramp analog signal used to control the output power 15 gnd ground 7 gsm850/900_in gsm850/900 rf input 16 dcs/pcs_out dcs/pcs rf output 8 gnd ground 17 gnd ground 9 gnd ground 18 gnd ground
3 a wt6280 data sheet - rev 2.1 11/2008 s tresses in excess of the absolute ratings may cause permanent damage. functional operation is not implied under these conditions. e xposure to absolute ratings for extended periods of time may adversely affect reliability. electrica l characteristics t able 2: absolute maximum ratings figure 3: esd pin rating electro static discharge sensitivity the awt6280 part was tested to determine the esd sensitivity of each package pin with respect to ground. all the package pins were subjected to an esd pulse event using the human body model outlined in jesd22-a114c.01 in either polarity with respect to ground. the pre and post test i-v characteristics of each pin are recorded. the ratings on each pin require that it sustain the esd event and show no degradation. parameter min max units supply voltage ( v batt ) - +7 v rf input power ( rf in ) - 11 dbm control voltage ( v ramp ) -0.3 1.8 v storage temperature ( t stg ) -55 150 c 18 1 9 8 7 2 3 4 5 6 10 16 11 13 15 12 14 17 gnd gnd gnd gnd gnd gnd gnd gnd n/c gsm850/900_out >+2500 v <-2500 v dcs/pcs_out >+2500 v <-2500 v gsm850/900_in >+2500 v <-2500 v dcs/pcs_in >+2500 v <-2500 v b s >+2500 v <-2500 v tx_e n >+2500 v <-2500 v v ba tt >+2500 v <-2500 v c ext >+2500 v <-2500 v v ramp >+2500 v <-2500 v gnd
4 a wt6280 data sheet - rev 2.1 11/2008 t able 4: digital inputs t able 5: logic control t able t able 3: operating conditions t he device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defned in the electrical specifcations. parameter min typ max units comments case temperature ( t c ) -20 - 85 c supply voltage ( v batt ) 3.0 3.5 4.8 v power supply leakage current - 1 10 ? a v batt = 4.8 v, v ramp = 0 v, tx_en = low no rf applied control voltage range 0.2 - 1.6 v turn on time ( t on ) - - 1 ? s v ramp = 0.2 v, tx_en = low y high p in = 5 db turn off time ( t off ) - - 1 ? s v ramp = 0.2 v, tx_en = low y high p in = 5 db rise time ( t ris e ) - - 1 ? s p out = -10 dbm y p max (within 0.2 db) fall time ( t fall ) - - 1 ? s p out = p max y -10 dbm (within 0.2 db) v ramp input capacitance - 3 - pf v ramp input current - - 10 ? a duty cycle - - 50 % parameter symbol min typ max units logic high voltage v ih 1.2 - 3.0 v logic low voltage v il - - 0.5 v logic high current |i i h | - - 30 ? a logic low current |i i l | - - 30 ? a operational mode bs tx_en gsm850/900 low high dcs/pcs high high pa disabled - low
5 a wt6280 data sheet - rev 2.1 11/2008 t able 6: electrical characteristics for gsm850 gmsk mode unless otherwise specifed: v batt = 3.5 v, p in = 3.0 dbm, pulse width =1154 s, duty = 25%, z in = z out = 50 ?, t c = 25 c, v ramp = 1.6 v, b s = low, tx_en = high parameter min typ max unit comments operating frequency ( f in ) 824 - 849 mhz input power (p in ) 0 3 5 dbm output power (p max ) 34.5 35.3 - dbm freq = 824 to 849 mhz degraded output power (p out ) 32.5 33.5 - dbm v batt = 3.0 v, t c = 85 c p in = 0 dbm pae @ p max 48 53 - % freq = 824 to 849 mhz forward isolation 1 - -42 -30 dbm tx_en = 0 v, p in = 5 dbm forward isolation 2 - -26 -20 dbm tx_en = high ,v ramp = 0.2 v p in = 5 dbm cross isolation (2f o , 3f o @ dcs/pcs port) - -33 -20 dbm p out < 34.5 dbm second harmonic - -23 -15 dbm p out < 34.5 dbm third harmonic - -42 -20 dbm p out < 34.5 dbm n * fo (n > 4), f o ? 12.75 ghz - -30 -10 dbm p out < 34.5 dbm stability vswr = 6:1 all phases , p out < 34.5 dbm - - -36 dbm f out < 1 ghz - - -30 dbm f out > 1 ghz ruggedness no permanent degradation vswr 10:1, all phase angles p out < 34.5 dbm rx noise power - -86 -84 dbm f tx = 849 mhz, rbw = 100 khz, f rx = 869 to 894 mhz, p out < 34.5 dbm input return loss - 1.5:1 2.5:1 vswr p out < 34.5 dbm
6 a wt6280 data sheet - rev 2.1 11/2008 t able 7: electrical characteristics for gsm850 8psk mode unless otherwise specifed: v batt = 3.5 v, p in = 3.0 dbm, pulse width =1154 s, duty = 25% z in = z out = 50 ?, t c = 25 c, bs = low, tx_en = high parameter min typ max unit comments operating frequency ( f in ) 824 - 849 mhz input power 0 3 5 dbm pae 20 28 - % f in = 824 to 849 mhz p out set = +29 dbm acpr 200 khz 400 khz 600 khz 1800 khz - - - - -38 -62 -72 -77 -34 -58 -64 -68 dbc/30 khz dbc/30 khz dbc/30 khz dbc/100 khz all conditions under polar operation p out = +29 dbm evm - 1 5 % all conditions under polar operation p out = +29 dbm
7 a wt6280 data sheet - rev 2.1 11/2008 t able 8: electrical characteristics for gsm900 gmsk mode unless otherwise specifed: v batt = 3.5 v, p in = 3.0 dbm, pulse width =1154 s, duty = 25%, z in = z out = 50 ?, t c = 25 c, v ramp = 1.6 v, b s = high, tx_en = high parameter min typ max unit comments operating frequency ( f in ) 880 - 915 mhz input power (p in ) 0 3 5 dbm output power (p max ) 34.5 35.0 - dbm freq = 880 to 915 mhz degraded output power (p out ) 32.5 33.0 - dbm v batt = 3.0 v, t c = 85 c p in = 0 dbm pae @ p max 50 55 - % freq = 880 to 915 mhz forward isolation 1 - -39 -30 dbm tx_en = 0 v, p in = 5 dbm forward isolation 2 - -26 -20 dbm tx_en = high ,v ramp = 0.2 v p in = 5 dbm cross isolation (2f o , 3f o @ dcs/pcs port) - -31 -20 dbm p out < 34.5 dbm second harmonic - -29 -15 dbm p out < 34.5 dbm third harmonic - -39 -20 dbm p out < 34.5 dbm n * fo (n > 4), f o ? 12.75 ghz - -29 -8 dbm p out < 34.5 dbm stability vswr = 6:1 all phases , p out < 34.5 dbm - - -36 dbm f out < 1 ghz - - -30 dbm f out > 1 ghz ruggedness no permanent degradation vswr 10:1, all phase angles p out < 34.5 dbm rx noise power - -85 -80 dbm f tx = 915 mhz, rbw = 100 khz, f rx = 925 to 935 mhz, p out < 34.5 dbm - -86 -85 dbm f tx = 915 mhz, rbw = 100 khz, f rx = 935 to 960 mhz, p out < 34.5 dbm input return loss - 1.5:1 2.5:1 vswr p out < 34.5 dbm
8 a wt6280 data sheet - rev 2.1 11/2008 t able 9: electrical characteristics for gsm900 8psk mode unless otherwise specifed: v batt = 3.5 v, p in = 3.0 dbm, pulse width =1154 s, duty = 25%, z in = z out = 50 ?, tc = 25 c , bs =high, tx_en = high parameter min typ max unit comments operating frequency ( f in ) 880 - 915 mhz input power 0 3 5 dbm pae 20 29 - % f in = 880 to 915 mhz p out set = +29 dbm acpr 200 khz 400 khz 600 khz 1800 khz - - - - -38 -64 -74 -77 -34 -58 -64 -68 dbc/30 khz dbc/30 khz dbc/30 khz dbc/100 khz all conditions under polar operation p out = +29 dbm evm - 1 5 % all conditions under polar operation p out = +29 dbm
9 a wt6280 data sheet - rev 2.1 11/2008 t able 10: electrical characteristics for dcs gmsk mode unless otherwise specifed: v batt = 3.5 v, p in = 3.0 dbm, v ramp = 1.6 v, pulse width =1154 s, duty = 25%, z in = z out = 50 ?, tc = 25 c , bs =high, tx_en = high parameter min typ max unit comments operating frequency ( f in ) 1710 - 1785 mhz input power (p in ) 0 3 5 dbm output power (p max ) 32.0 33.2 - dbm freq = 1710 to1785 mhz degraded output power (p out ) 30.0 31.0 - dbm v batt = 3.0 v, t c = 85 c p in = 0 dbm pae @ p max 45 52 - % freq = 1710 to1785 mhz forward isolation 1 - -37 -31 dbm tx_en = 0 v, p in = 5 dbm forward isolation 2 - -22 -17 dbm tx_en = high ,v ramp = 0.2 v p in = 5 dbm second harmonic - -19 -10 dbm p out < 32.0 dbm third harmonic - -27 -20 dbm p out < 32.0 dbm n * fo (n > 4), f o ? 12.75 ghz - -34 -10 dbm p out < 32.0 dbm stability vswr = 6:1 all phases , p out < 32.0 dbm - - -36 dbm f out < 1 ghz - - -30 dbm f out > 1 ghz ruggedness no permanent degradation vswr 10:1, all phase angles p out < 32.0 dbm rx noise power - -86 -81 dbm f tx = 1785 mhz, rbw = 100 khz, f rx = 1805 to1880 mhz, p out < 32.0 dbm input return loss - 1.5:1 2.5:1 vswr p out < 32.0 dbm
10 a wt6280 data sheet - rev 2.1 11/2008 t able 11: electrical characteristics for dcs 8psk mode unless otherwise specifed: v batt = 3.5 v, p in = 3.0 dbm, pulse width =1154 s, duty = 25%, z in = z out = 50 ?, tc = 25 c , bs =high, tx_en = high parameter min typ max unit comments operating frequency ( f in ) 1710 - 1785 mhz input power 0 3 5 dbm pae 25 30 - % f in = 1710 to 1785 mhz p out set = +28.5 dbm acpr 200 khz 400 khz 600 khz 1800 khz - - - - -38 -62 -73 -76 -34 -58 -64 -68 dbc/30 khz dbc/30 khz dbc/30 khz dbc/100 khz all conditions under polar operation p out = +28.5 dbm evm - 1 5 % all conditions under polar operation p out = +28.5 dbm
11 a wt6280 data sheet - rev 2.1 11/2008 t able 12: electrical characteristics for pcs gmsk mode unless otherwise specifed: v batt = 3.5 v, p in = 3.0 dbm, v ramp = 1.6 v, pulse width =1154 s, duty = 25%, z in = z out = 50 ?, tc = 25 c , bs =high, tx_en = high parameter min typ max unit comments operating frequency ( f in ) 1850 - 1910 mhz input power (p in ) 0 3 5 dbm output power (p max ) 32.0 32.8 - dbm freq = 1850 to1910 mhz degraded output power (p out ) 30.0 30.5 - dbm v batt = 3.0 v, t c = 85 c p in = 0 dbm pae @ p max 45 52 - % freq = 1850 to1910 mhz forward isolation 1 - -39 -33 dbm tx_en = 0 v, p in = 5 dbm forward isolation 2 - -23 -17 dbm tx_en = high ,v ramp = 0.2 v p in = 5 dbm second harmonic - -21 -12 dbm p out < 32.0 dbm third harmonic - -35 -20 dbm p out < 32.0 dbm n * fo (n > 4), f o ? 12.75 ghz - -33 -10 dbm p out < 32.0 dbm stability vswr = 6:1 all phases , p out < 32.0 dbm - - -36 dbm f out < 1 ghz - - -30 dbm f out > 1 ghz ruggedness no permanent degradation vswr 10:1, all phase angles p out < 32.0 dbm rx noise power - -87 -82 dbm f tx = 1910 mhz, rbw = 100 khz, f rx = 1930 to1990 mhz, p out < 32.0 dbm input return loss - 1.5:1 2.5:1 vswr p out < 32.0 dbm
12 a wt6280 data sheet - rev 2.1 11/2008 t able 13: electrical characteristics for pcs 8psk mode unless otherwise specifed: v batt = 3.5 v, p in = 3.0 dbm, pulse width =1154 s, duty = 25%, z in = z out = 50 ?, tc = 25 c , bs =high, tx_en = high parameter min typ max unit comments operating frequency ( f in ) 1850 - 1910 mhz input power 0 3 5 dbm pae 25 32 - % f in = 1850 to 1910 mhz p out set = +28.5 dbm acpr 200 khz 400 khz 600 khz 1800 khz - - - - -37 -63 -72 -75 -34 -58 -64 -68 dbc/30 khz dbc/30 khz dbc/30 khz dbc/100 khz all conditions under polar operation p out = +28.5 dbm evm - 1 5 % all conditions under polar operation p out = +28.5 dbm
13 a wt6280 data sheet - rev 2.1 11/2008 applic ation inform ation figure 4: recommended application circuit gsm850/900 rf input 1 2 3 4 5 6 7 16 15 14 13 12 11 10 8 9 18 17 dcs/pcs_in bs tx_en v batt c ext v ramp gsm_in gnd gnd gnd gnd gnd gnd gsm_out n/c gnd gnd dcs/pcs_out awt6280 dcs/pcs rf input band select tx enable dac output battery voltage 2.2k * 68pf * * component values depends on baseband chipset used. ** this component should be placed as close to the device pin as possible. ++ these components are recommended as good design practice for improving noise rejection characteristics. the values specified are not critical as they may not be required in the final application. 2.7pf ** 47uf ++ 22nf ** 1nf ++ 1nf ++ asm or fem
14 a wt6280 data sheet - rev 2.1 11/2008 pa ckage outline figure 5: m11 package outline - 18 pin 7 mm x 7 mm x 1.0 mm surface mount module figure 6: branding specifcation
15 a wt6280 data sheet - rev 2.1 11/2008 figure 7: recommended pcb layout information
w arning anadigics products are not intended for use in life support appliances, devices or systems. use of an anadigics product in any such application without written consent is prohibited. impo rtant notice anadigics, inc. 141 mount bethel road warren, new jersey 07059, u.s.a. tel: +1 (908) 668-5000 fax: +1 (908) 668-5132 url: http://www.anadigics.com e-mail: mktg@anadigics.com anadigics, inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. the product specifcations contained in advanced product information sheets and preliminary data sheets are subject to change prior to a products formal introduction. information in data sheets have been carefully checked and are assumed to be reliable; however, anadigics assumes no responsibilities for inaccuracies. anadigics strongly urges customers to verify that the information they are using is current before placing orders. 16 a wt6280 data sheet - rev 2.1 11/2008 ordering inform ation order number temperature range package description component packaging AWT6280RM11P8 -20 c to +85c rohs-compliant 18 pin 7 mm x 7 mm x 1.0 mm surface mount module tape and reel, 2500 pieces per reel awt6280rm11p9 -20 c to +85c rohs-compliant 18 pin 7 mm x 7 mm x 1.0 mm surface mount module partial tape and reel

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