19-5518; rev 1; 9/12 typical application circuit general description the max2667/max2669 high-gain, low-noise amplifiers (lnas) are designed for gps l1, galileo, and glonass applications. designed in maxims advanced sige pro - cess, the devices achieve a high gain and our lowest noise figure, while maximizing the input-referred 1db compression point and the 3rd-order intercept point. the devices operate from a +1.6v to +3.3v single sup - ply. the max2667 is optimized for low current. the max2669 is optimized for high linearity. the shutdown feature in the device reduces the supply current to be less than 10a. the devices are available in a very small, lead-free, rohs-compliant, 0.86mm x 1.26mm x 0.65mm wafer-level package (wlp). applications automotive navigation location-enabled mobile devices telematics (asset tracking and management) personal navigation devices (pnds) cellular phones with gps notebook pcs/ultra-mobile pcs recreational, marine navigation avionics watches features s 19db high-power gain (max2667) s ultra-low noise figure: 0.65db s integrated 50 output matching circuit s low 4.1ma supply current (max2667) s wide 1.6v to 3.3v supply voltage range s low bill of materials: two inductors, three capacitors, and one resistor s small footprint: 0.86mm x 1.26mm s thin profile: 0.65mm s 0.4mm-pitch wafer-level package (wlp) ordering information + denotes a lead(pb)-free/rohs-compliant package. t = tape and reel. b2 rfin + rfout v cc shdn rf output gnddc rf input bias l1 = 6.2nh (max2667) c1 = 100nf (max2667) c2 = 39pf l2 = 100nh c3 = 39pf l1 = 3.3nh (max2669) c1 = 100nf (max2669) l1 l2 c1 c2 v cc c3 b1 a2 bias a1 c2 gndac c1 max2667 max2669 25k part temp range pin-package max2667 ewt+t -40c to +85c 6 wlp max2669 ewt+t -40c to +85c 6 wlp for pricing, delivery, and ordering information, please contact maxim direct at 1-888-629-4642, or visit maxims website at www.maximintegrated.com. gps/gnss ultra-low-noise-figure lnas max2667/max2669 evaluation kit available
2 stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specificatio ns is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. v cc to gnd_ ........................................................ -0.3v to +3.6v rfout and bias to gnd_ ..... -0.3v to (operating v cc + 0.3v) maximum rf input power ............................................... +5dbm continuous power dissipation (t a = +70c) wlp (derates 10.5mw/c above +70c) .................... 840mw maximum current into rf input ......................................... 10ma operating temperature range .......................... -40c to +85c junction temperature ..................................................... +150c storage temperature range ............................ -65c to +160c soldering temperature (reflow) (note 1) ........................ +260c dc electrical characteristics (max2667/max2669 ev kit. v cc = 1.6v to 3.3v, no rf signals are applied, t a = -40c to +85c. typical values are at v cc = 2.85v and t a = +25c, unless otherwise noted.) (note 2) ac electrical characteristics (max2667/max2669 ev kit. v cc = 1.6v to 3.3v, f rfin = 1575.42mhz, t a = -40c to +85c. typical values are at v cc = 2.85v and t a = +25c, unless otherwise noted.) (note 2) absolute maximum ratings note 1: refer to application note 1891: wafer-level packaging (wlp) and its applications . junction-to-ambient thermal resistance ( q ja ) .......... 95c/w note 2: package thermal resistances were obtained using the method described in jedec specification jesd51-7, using a four-lay - er board. for detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial . package thermal characteristics (note 2) caution! esd sensitive device parameter conditions min typ max units supply voltage 1.6 2.85 3.3 v supply current shdn = high max2667 4.1 ma max2669 7.7 shutdown mode, shdn = low 10 f a digital input logic-high t a = +25 c 1.2 v digital input logic-low t a = +25 c 0.45 v parameter conditions min typ max units rf frequency l1 band 1575.42 mhz power gain v cc = 2.85v max2667 15.0 19.5 db max2669 14.6 17.7 v cc = 1.6v max2667 14.8 19.4 max2669 14.3 17.6 noise figure v cc = 1.8v 0.65 db v cc = 3.3v 0.65 maxim integrated gps/gnss ultra-low-noise-figure lnas max2667/max2669
3 ac electrical characteristics (continued) (max2667/max2669 ev kit. v cc = 1.6v to 3.3v, f rfin = 1575.42mhz, t a = -40c to +85c. typical values are at v cc = 2.85v and t a = +25c, unless otherwise noted.) (note 2) note 2: min and max limits guaranteed by test at t a = +25c and guaranteed by design and characterization at t a = -40c and t a = +85c. note 3: measured with the two tones located at 1mhz and 2mhz offset from the center of the gps band with -30dbm/tone for max2667 and -27dbm/tone for max2669. note 4: measured with input tones at 1713mhz (-25dbm) and 1851mhz (-49dbm). note 5: measured with a tone located at 5mhz offset from the center of the gps band. parameter conditions min typ max units in-band 3rd-order input intercept point (note 3) max2667 -3.5 dbm max2669 +4.5 out-of-band 3rd-order input intercept point (note 4) max2667 +2.5 dbm max2669 +8 input 1db compression point (note 5) max2667 -12.5 dbm max2669 -10 input return loss 10 db output return loss 15 db reverse isolation 30 db maxim integrated gps/gnss ultra-low-noise-figure lnas max2667/max2669
4 typical operating characteristics (max2667/max2669 ev kit. typical values are at v cc = 2.85v, f rfin = 1575.42mhz, t a = +25c, unless otherwise noted.) input return loss vs. frequency max2667 toc01 frequency (mhz) |s11| (db) 2000 1500 1000 -30 -25 -20 -15 -10 -5 0 -35 500 2500 max2669 max2667 gain vs. frequency max2667 toc02 frequency (mhz) gain (db) 2000 1500 1000 -5 0 5 10 15 20 25 -10 500 2500 max2669 max2667 reverse isolation vs. frequency max2667 toc03 frequency (mhz) |s12| (db) 2000 1500 1000 -60 -50 -40 -30 -20 -70 500 2500 max2669 max2667 output return loss vs. frequency max2667 toc04 frequency (mhz) |s22| (db) 2000 1500 1000 -20 -15 -10 -5 0 -25 500 2500 max2669 max2667 max2667 in-band iip3 vs. supply voltage and temperature (two tones located at 1mhz and 2mhz offset with -35dbm/tone) max2667 toc05 supply voltage (v) iip3 (dbm) 3.0 2.8 2.6 2.4 2.2 2.0 1.8 -4 -3 -2 -1 0 -5 1.6 3.2 -40 n c +85 n c +25 n c max2669 in-band iip3 vs. supply voltage and temperature (two tones located at 1mhz and 2mhz offset with -30dbm/tone) max2667 toc06 supply voltage (v) iip3 (dbm) 3.0 2.8 2.6 2.4 2.2 2.0 1.8 2 4 6 8 0 1.6 -40 n c +85 n c +25 n c 3.2 maxim integrated gps/gnss ultra-low-noise-figure lnas max2667/max2669
5 typical operating characteristics (continued) (max2667/max2669 ev kit. typical values are at v cc = 2.85v, f rfin = 1575.42mhz, t a = +25c, unless otherwise noted.) max2669 input p1db compression vs. supply voltage and temperatur e max2667 toc10 supply voltage (v) input p1db (dbm) 3.0 2.8 2.6 2.4 2.2 2.0 1.8 -13 -12 -11 -10 -9 -14 1.6 3.2 -40 n c +85 n c +25 n c supply voltage (v) 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 3.2 max2667 toc09 max2667 input p1db compression v s. supply voltage and temperature input p1db (dbm) -17 -16 -15 -14 -13 -12 -11 -18 -40nc +85nc +25nc iip3 (dbm) supply voltage (v) 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 3.2 max2669 out-of-band iip3 vs. supply voltage and temperature (tone 1 at 1713mhz, -25dbm; tone 2 at 1851mhz, -49dbm) max2667 toc08 5 6 7 8 9 10 4 -40 n c +85 n c +25 n c max2667 out-of-band iip3 vs. supply voltage and temperature (tone 1 at 1713mhz, -25dbm; tone 2 at 1851mhz, -49dbm) max2667 toc07 supply voltage (v) iip3 (dbm) 3.0 2.8 2.6 2.4 2.2 2.0 1.8 0 1 2 3 -1 1.6 -40 n c +85 n c +25 n c 3.2 maxim integrated gps/gnss ultra-low-noise-figure lnas max2667/max2669
6 bump description bump configuration detailed description the max2667/max2669 are lnas designed for gps l1, galileo, and glonass applications. the devices feature a power-shutdown control mode to eliminate the need for an external supply switch. the devices achieve a high gain and an ultra-low noise figure. input and output matching the devices require an off-chip input matching. only an inductor in series with a dc-blocking capacitor is needed to form the input matching circuit. the typical application circuit shows the recommended input- matching network. these values are optimized for the best simultaneous gain, noise figure, and return loss performance. tables 1 and 2 list typical device s param - eters and k f values. the devices integrate an on-chip output matching to 50 at the output, eliminating the need for external matching components. the value of the input coupling capacitor affects iip3. a smaller coupling capacitor results in lower iip3. wlp top view bump side down + 12 bias rfout/ shdn rfin v cc gndac a b c gnddc max2667/max2669 bump name function a1 bias provides bias for lna input. connect to b1 (rfin) through a high-value inductor (100nh), and bypass to ground close to the pin. a2 rfout/ shdn rf output and shdn logic input. rfout is internally matched to 50 i and has an internal dc-blocking capacitor. the shdn logic requires an external 25k ? resistor to the logic control. b1 rfin rf input. connect to a1 through bias choke, and connect matching network and dc-blocking capacitor. b2 v cc supply voltage. bypass to ground with a capacitor close to the ic. c1 gndac ground of the rf path. connect to the 2nd-layer pcb ground plane with a via next to the pin pad. c2 gnddc ground of bias circuit. connect to the 2nd-layer pcb ground plane with a separate via from pin c1. sharing a ground via with pin c1 might cause stability problems. maxim integrated gps/gnss ultra-low-noise-figure lnas max2667/max2669
7 table 1. max2667 typical device s-parameter values and k-factor table 2. max2669 typical device s-parameter values and k-factor shutdown the devices include a shutdown feature to turn off the entire chip. a logic-high must be applied to the rfout/ ( shdn) pin using a 25k external resistor to place the part in active mode, and a logic-low to place the part in shutdown mode. applications information a properly designed pcb is essential to any rf micro - wave circuit. use controlled-impedance lines on all high-frequency inputs and outputs. bypass v cc with decoupling capacitors located close to the device. for long v cc lines, it may be necessary to add decoupling capacitors. locate these additional capacitors further away from the device package. proper grounding of the gnd_ pins is essential. if the pcb uses a topside rf ground, connect it directly to the gnd_ pins. for a board where the ground is not on the component layer, connect the gnd_ pins to the board with multiple vias close to the package. freq. (mhz) s11 mag (db) s11 phase (degrees) s21 mag (db) s21 phase (degrees) s12 mag (db) s12 phase (degrees) s22 mag (db) s22 phase (degrees) k f 1000 -2.0 -47.7 6.0 -100.0 -47.5 -148.0 -1.0 -55.0 5.1 1100 -2.1 -48.6 7.4 -100.6 -45.7 -150.0 -1.0 -58.1 3.8 1200 -2.2 -51.6 9.6 -107.3 -42.9 -153.5 -1.4 -65.4 3.1 1300 -2.4 -55.0 12.0 -117.2 -39.6 -160.2 -2.1 -74.1 2.5 1400 -2.7 -58.6 14.0 -129.5 -37.0 -168.5 -3.6 -85.5 2.3 1500 -6.5 -61.9 16.2 -146.5 -34.1 178.5 -7.4 -100.0 2.8 1575 -4.3 -62.3 17.1 -164.2 -32.9 162.8 -15.3 -100.8 2.1 1600 -4.6 -61.6 17.3 -170.6 -32.8 156.6 -20.6 -78.9 2.0 1700 -5.4 -55.3 17.1 165.5 -32.5 136.5 -9.5 10.0 1.8 1800 -5.2 -49.8 15.7 145.8 -33.8 121.6 -4.5 -2.4 1.6 1900 -4.8 -47.3 13.9 135.2 -35.2 113.8 -2.7 -13.2 1.6 2000 -4.5 -46.7 12.7 127.3 -36.7 109.6 -1.8 -21.2 1.5 freq. (mhz) s11 mag (db) s11 phase (degrees) s21 mag (db) s21 phase (degrees) s12 mag (db) s12 phase (degrees) s22 mag (db) s22 phase (degrees) k f 1000 -3.0 -57.0 10.8 -120.0 -43.0 -154.0 -1.3 -65.0 3.2 1100 -3.3 -58.2 11.6 -124.5 -42.1 -155.0 -1.6 -70.2 3.3 1200 -3.5 -60.0 13.4 -134.6 -39.3 -160.5 -2.4 -79.6 2.8 1300 -3.8 -62.3 14.9 -148.0 -37.2 -168.3 -4.0 -90.0 2.7 1400 -4.3 -63.3 15.9 -162.3 -35.4 -178.2 -7.3 -101.0 2.7 1500 -4.9 -62.0 16.6 -178.9 -33.9 171.0 -14.5 -100.6 2.6 1575 -5.3 -59.7 16.6 168.0 -33.5 161.7 -19.6 -26.0 2.5 1600 -5.4 -58.5 16.5 163.9 -33.6 157.5 -16.7 -6.0 2.5 1700 -5.5 -53.7 15.8 149.3 -33.6 148.3 -9.0 3.6 2.3 1800 -5.3 -50.3 14.7 136.8 -34.2 142.5 -5.7 -2.8 2.2 1900 -5.1 -48.0 13.4 130.0 -35.1 139.6 -4.0 -9.6 2.3 2000 -4.9 -46.3 12.7 123.9 -35.8 138.6 -3.0 -15.0 2.1 maxim integrated gps/gnss ultra-low-noise-figure lnas max2667/max2669
8 table 3. max2667 typical noise parameters (v cc = 2.85v, t a = +25c) table 4. max2669 typical noise parameters (v cc = 2.85v, t a = +25c) chip information process: sige bicmos package information for the latest package outline information and land patterns (foot - prints), go to www.maximintegrated.com/packages . note that a +, #, or - in the package code indicates rohs status only. package drawings may show a different suffix character, but the drawing pertains to the package regardless of rohs status. frequency (mhz) fmin (db) | g opt | | g opt | angle r n ( i ) 1550 0.54 0.48 39.9 8.43 1560 0.55 0.48 40.2 8.42 1570 0.55 0.48 40.5 8.41 1575 0.55 0.48 40.7 8.41 1580 0.55 0.48 40.9 8.40 1590 0.55 0.48 41.2 8.39 1600 0.55 0.48 41.5 8.38 frequency (mhz) fmin (db) | g opt | | g opt | angle r n ( i ) 1550 0.57 0.29 76.1 4.53 1560 0.57 0.29 76.6 4.53 1570 0.57 0.29 77.0 4.53 1575 0.57 0.29 77.3 4.52 1580 0.57 0.29 77.5 4.52 1590 0.57 0.29 78.0 4.52 1600 0.57 0.29 78.5 4.52 package type package code outline no. land pattern no. 6 wlp w61b1+1 21-0217 refer to application 1891 maxim integrated gps/gnss ultra-low-noise-figure lnas max2667/max2669
maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a maxim product. no circuit patent licenses are implied. maxim reserves the right to change the circuitry and specifications without notice at any time. the parametric values (min and max limits) shown in the electrical characteristics table are guaranteed. other parametric values quoted in this data sheet are provided for guidance. maxim integrated 160 rio robles, san jose, ca 95134 usa 1-408-601-1000 9 ? 2012 maxim integrated the maxim logo and maxim integrated are trademarks of maxim integrated products, inc. revision history revision number revision date description pages changed 0 9/10 initial release 1 9/12 updated bump description , updated shutdown section 5, 6 gps/gnss ultra-low-noise-figure lnas max2667/max2669
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