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| inchange semiconductor product specification silicon pnp power transistors 2SB1455 description ? with to-220f package ? complement to type 2sd2203 ? low collector saturation voltage: ? large current capacity applications ? high current power switching applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -90 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -6 v i c collector current -7 a i cm collector current-peak -12 a t a =25 ?? 2.0 p c collector dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2SB1455 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma ;r be = ?t -80 v v (br)cbo collector-base breakdown voltage i c =-1ma ;i e =0 -90 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -6 v v cesat collector-emitter saturation voltage i c =-4a ;i b =-0.4a -0.5 v i cbo collector cut-off current v cb =-80v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-4v; i c =0 -0.1 ma h fe-1 dc current gain i c =-1a ; v ce =-2v 70 280 h fe-2 dc current gain i c =-4a ; v ce =-2v 30 f t transition frequency i c =-1a ; v ce =-5v 20 mhz switching times t on turn-on time 0.2 | s t s storage time 0.7 | s t f fall time i c =-2.0a i b1 =-i b2 =-0.2a v cc =-50v ,r l =25 |? 0.2 | s ? h fe-1 classifications q r s 70-140 100-200 140-280 inchange semiconductor product specification 3 silicon pnp power transistors 2SB1455 package outline fig.2 outline dimensions inchange semiconductor product specification 4 silicon pnp power transistors 2SB1455 |
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