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4v drive nch + pch mosfet QS8M12 ? structure silicon n-channel mosfet/ silicon p-channel mosfet ? features 1) low on-resistance. 2) high power package(tsmt8). 3) low voltage drive(4v drive). ? application switching ? packaging specifications package taping code tcr basic ordering unit (pieces) 3000 QS8M12 ? ? absolute maximum ratings (ta = 25 ? c) tr1 : n-ch tr2 : p-ch drain-source voltage v dss 30 ? 30 v gate-source voltage v gss ? 20 ? 20 v continuous i d ? 4 ? 4a pulsed i dp ? 12 ? 12 a continuous i s 1.0 ? 1.0 a pulsed i sp 12 ? 12 a w / total w / element channel temperature tch ? c range of storage temperature tstg ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. power dissipation p d symbol type source current (body diode) drain current parameter 1.5 ? 55 to ? 150 unit limits 1.25 150 *1 *2 *1 (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ?1 esd protection diode ?2 body diode tsmt8 (8) (7) (5)(6) (1) (2) (4)(3) ?dimensions (unit : mm) ?inner circuit ?2 ?1 (8) (7) (1) (2) ?2 ?1 (6) (5) (3) (4) abbreviated symbol : m12 1/10 2011.05 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
QS8M12 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs =20v, v ds =0v drain-source breakdown voltage v (br)dss 30 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma -3042 i d =4a, v gs =10v -4056 i d =4a, v gs =4.5v 45 63 i d =4a, v gs =4v forward transfer admittance l y fs l 2.5 - - s v ds =10v, i d =4a input capacitance c iss - 250 - pf v ds =10v output capacitance c oss - 90 - pf v gs =0v reverse transfer capacitance c rss - 45 - pf f=1mhz turn-on delay time t d(on) -7-nsi d =2a, v dd 15v rise time t r - 30 - ns v gs =10v turn-off delay time t d(off) - 30 - ns r l =7.5 ? fall time t f -5-nsr g =10 ? total gate charge q g - 3.4 - nc i d =4a, v dd 15v gate-source charge q gs - 1.2 - nc v gs =5v gate-drain charge q gd - 1.3 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =4a, v gs =0v *pulsed parameter conditions conditions parameter static drain-source on-state resistance r ds (on) m ? * * * * * * * * * * 2/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M12 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss ? 30 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss - ? 1 ? av ds = ? 30v, v gs =0v gate threshold voltage v gs (th) ? 1.0 - ? 2.5 v v ds = ? 10v, i d = ? 1ma -4056 i d = ? 4a, v gs = ? 10v -5577 i d = ? 2a, v gs = ? 4.5v -6084 i d = ? 2a, v gs = ? 4.0v forward transfer admittance l y fs l3 - - sv ds = ? 10v, i d = ? 4a input capacitance c iss - 800 - pf v ds = ? 10v output capacitance c oss - 120 - pf v gs =0v reverse transfer capacitance c rss - 110 - pf f=1mhz turn-on delay time t d(on) -8-nsi d = ? 2a, v dd ? 15v rise time t r - 20 - ns v gs = ? 10v turn-off delay time t d(off) - 80 - ns r l =7.5 ? fall time t f - 50 - ns r g =10 ? total gate charge q g - 8.4 - nc i d = ? 4a, v dd ? 15v gate-source charge q gs - 3.0 - nc v gs = ? 5v gate-drain charge q gd - 3.5 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 4a, v gs =0v *pulsed parameter conditions conditions m ? static drain-source on-state resistance r ds (on) parameter * * * * * * * * * * * * * * * * * 3/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M12 ? electrical characteristic curves (ta=25 ? c) tr.1(nch) 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs =2.5v v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.8v v gs =3.5v t a =25 pulsed 0 1 2 3 4 0 2 4 6 8 10 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =2.5v v gs =10.0v v gs =4.0v v gs =4.5v v gs =3.0v v gs =2.8v t a =25 pulsed 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs =4.0v v gs =4.5v v gs =10v t a =25 pulsed 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs =4.5v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs =4v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 4/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M12 0.01 0.1 1 10 0.001 0.01 0.1 1 10 forward transfer admittance y fs [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : i d [a] gate - source voltage : v gs [v] fig.8 typical transfer characteristics v ds =10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 source current : i s [a] source - drain voltage : v sd [v] fig.9 source current vs. source - drain voltage v gs =0v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 0 20 40 60 80 100 0 2 4 6 8 10 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : v gs [v] fig.10 static drain - source on - state resistance vs. gate - source voltage i d =4.0a i d =2.0a t a =25 pulsed 1 10 100 1000 0.01 0.1 1 10 switching time : t [ns] drain current : i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P 15v v gs =10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 0 2 4 6 8 10 gate - source voltage : v gs [v] total gate charge : q g [nc] fig.12 dynamic input characteristics t a =25 c v dd =15v i d =4a pulsed 5/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M12 10 100 1000 10000 0.01 0.1 1 10 100 capacitance : c [pf] drain - source voltage : v ds [v] fig.13 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r(t) pulse width : pw (s) fig.15 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =100 c /w rth (ch - a) (t)=r(t) rth (ch - a) 0.01 0.1 1 10 100 0.1 1 10 100 drain current : i d [ a ] drain - source voltage : v ds [ v ] fig.14 maximum safe operating area t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) operation in this area is limited by r ds(on) (v gs = 10v) dc operation p w = 100 s p w = 1ms p w = 10ms 6/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M12 tr.2(pch) 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 drain current : - i d [a] drain - source voltage : - v ds [v] fig.1 typical output characteristics ( ) v gs = - 10.0v v gs = - 4.0v v gs = - 4.5v v gs = - 3.0v v gs = - 3.5v v gs = - 2.5v t a =25 c pulsed 0 1 2 3 4 0 2 4 6 8 10 drain current : - i d [a] drain - source voltage : - v ds [v] fig.2 typical output characteristics ( ) v gs = - 10.0v v gs = - 4.0v v gs = - 4.5v v gs = - 3.5v v gs = - 3.0v v gs = - 2.8v v gs = - 2.6v v gs = - 2.2v t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs = - 4.0v v gs = - 4.5v v gs = - 10v t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs = - 4.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs = - 4v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 7/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M12 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 forward transfer admittance y fs [s] drain current : - i d [a] fig.7 forward transfer admittance vs. drain current v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : - i d [a] gate - source voltage : - v gs [v] fig.8 typical transfer characteristics v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 source current : - i s [a] source - drain voltage : - v sd [v] fig.9 source current vs. source - drain voltage v gs =0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0 50 100 150 200 0 2 4 6 8 10 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : - v gs [v] fig.10 static drain - source on - state resistance vs. gate - source voltage i d = - 4a i d = - 2a t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 switching time : t [ns] drain current : - i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P - 15v v gs = - 10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 0 2 4 6 8 10 12 14 gate - source voltage : - v gs [v] total gate charge : q g [nc] fig.12 dynamic input characteristics t a =25 c v dd = - 15v i d = - 4a pulsed 8/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M12 10 100 1000 10000 0.01 0.1 1 10 100 capacitance : c [pf] drain - source voltage : - v ds [v] fig.13 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 drain current : - i d [ a ] drain - source voltage : - v ds [ v ] fig.14 maximum safe operating area t a =25 c single pulse:1unit mounted on a ceramic board. (30mm 30mm 0.8mm) operation in this area is limited by r ds(on) (v gs = - 10v) p w = 100 s p w = 1ms p w = 10ms dc operation 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.15 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =100 c /w rth (ch - a) (t)=r(t) rth (ch - a) 9/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M12 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform v gs r g v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 10/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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