optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 05/08 page 1 of 5 npn silicon phototransistor op550, op552, op555, op560, op565, op750, op755 series optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. 55 = phototransistor a = highest sensitivity level 56 = photodarlington b = sensitivity level with min. max. 75 = phototransistor with r be c = middle sensitivity level 77 = phototransistor with c ce d = lowest sensitivity level 0 = extended lens - clear package 2 = extended lens - blue tinted package 5 = integral lens - blue tinted package op550a OP552A op555a op560a op565a op750a op755a op770a op775a op550b op552b op555b op560b op565b op750b op755b op770b op775b op550c op552c op555c op560c op565c op750c op755c op770c op775c op550d op552d op555d op750d op755d op770d op775d available part numbers op __ __ __ __ features: ? wide receiving angle ? four of sensitivity ranges ? side-looking package ? ideal for space-limited applications ? ideal for pcboard mounting ? choice of clear, opaque or blue-tinted package rohs description: op550, op552, op555, op750, op755, op770 and op775 series consists of a npn silicon phototransistor molded in an epoxy package with a wide receiving angle that provi des relatively even reception over a large area. the op750, op755, op770 and op775 have additional circuitry to enhance the oper ation of the device for stray light levels. op560 and op565 series consists of a npn silicon photodarlington transistor molded in an epoxy package with a wide receiving angle that provides relatively even reception over a large area. the side-looking package design allows easy pcboard mounting of slotted optical switches or optical interrupt detectors. the op550, op560, op750 and op770 devices have an external lens in a clear epoxy package. the op552 device has an integral lens in an opaque plastic package that is optically transparent to infrared light but opaque to visible wavelengths. this feature allows the device to be used under high ambient light conditions ? or anywhere external ligh t sources could interfere with the intended sens ing application (visible light immunity). the op555, op565, op755 and op775 devices have an internal lens in a blue-tinted package. the lensing effect of this package allows an acceptance half-angle of 28 when measured from the optical axis to the half-power point. these devices are 100% production tested using infrared light fo r close correlation with optek?s gaas and gaaias emitters. all of these sensors are mechanical ly and spectrally matched to the op140, op142, op145, op240 and op245 series of infrared emitting diodes. please refer to application bulletins 208 and 210 for additio nal design information and reliability (degradation) data. for custom versions please cont act your optek representative. op550 op560 op750 op770 op555 op565 op755 op775 applications: ? applications requiri ng wide receiving angle ? applications requiring pcboard mounting ? space-limited applications ? optical switches ? optical interrupt detectors ? optical encoders ? non-contact position sensing ? machine automation op552
optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 05/08 page 2 of 5 npn silicon phototransistor op550, op552, op555, op560, op565, op750, op755 series optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. op555, op565, op755 , op775 (a, b, c, d) notes: 1. rma flux is recommended. duration can be extended to 10 sec onds maximum when flow soldering. a maximum 20 grams force may be applied to the leads when soldering. 2. for op550, op560, op555 and op565, derate linearly 1.33 mw/ c above 25 c. for op552, derate linearly 1.25 mw/ c above 25 c. 3. for all phototransistors in this series, the light source is an unfiltered gaas led with a peak emission wavelength of 935 n m. for op550 and op555 only, a radiometric intensity level that varies le ss than 10% over the entire lens surface of the phototransist or being tested applies. 4. to calculate typical collector dark current in a, use the formula i ceo =10 (0.040 t a - 3.4) , where t a is ambient temperature in c. op550, op552, op560, op750, op770 (a, b, c, d) pin # sensor 1 emitter 2 collector 1 2 op555 - contains polysulfone to avoid stress cracking, we suggest using nd industries? vibra-tite for thread-locking. vibra-tite evaporates fast without causing structural failure in optek's molded plastics. inches [millimeters] dimensions are in: inches [millimeters] dimensions are in:
optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 05/08 page 3 of 5 npn silicon phototransistor op550, op552, op555, op560, op565, op750, op755 series optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. absolute maximum ratings (t a =25c unless otherwise noted) storage temperature range -40 o c to +100 o c collector-emitter voltage 30 v emitter-collector voltage 5 v lead soldering temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260 c (1) power dissipation 100 mw (2) operating temperature range op550, op555, op560, op565, op750, op755 op552 -40 o c to +100 o c -40 o c to +85 o c electrical characteristics (t a = 25c unless otherwise noted) symbol parameter min typ max units test conditions input diode i c(on) on-state collector current op550a, OP552A, op555a op550b, op552b, op555b op550c, op552c, op555c op550d, op552d, op555d 2.55 1.30 0.25 0.25 - - - - - 4.70 2.40 - ma v ce = 5.0 v, e e = 1.0 mw/cm 2(3) op560a, op565a op560b, op565b op560c, op565c 6.6 3.3 1.1 - - - - 9.8 - v ce = 2.0 v, e e = 0.1 mw/cm 2(3) op750a op750b op750c 2.25 1.50 0.85 - - - 7.00 4.20 2.80 v ce = 5.0 v, e e = 1.0 mw/cm 2(3) op755a op755b op755c 1.80 1.20 0.70 - - - 5.50 3.40 2.25 op770a op770b op770c 2.25 1.50 0.85 - - - 7.00 4.20 2.80 op775a op775b op775c 1.80 1.20 0.70 - - - 5.50 3.40 2.25 i c / ? t relative i c charge with temperature - 1.00 - %/c v ce = 5.0 v, e e = 1.0 mw/cm 2 , = 935 nm i ceo collector-dark current - - 100 na v ce = 10.0 v, e e = 0 (4) v (br)ceo collector-emitter breakdown voltage op550, op552, op555, op750, op755, op770, op775 30 - - v i c = 100 a, e e = 0 (4)
optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 05/08 page 4 of 5 npn silicon phototransistor op550, op552, op555, op560, op565, op750, op755 series optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. 100 r l v cc = 5 v i f adjust i f to obtain v rl switching test circuit op552 - angular response 20 40 60 80 100 angular displacement (degrees) relative collector current (%) -45 -30 -15 0 15 30 45 irradiance (e e ) (mw/cm 2 ) 0 0.5 1.0 2.0 1.5 2.5 3.0 3.5 2 4 6 8 10 12 = 935 nm = 880 nm op552 - on-state collector current vs irradiance on-state collector current (i c(on) ) (ma) electrical characteristics (t a = 25c unless otherwise noted) symbol parameter min typ max units test conditions input diode v (br)eco emitter-collector breakdown voltage 5.0 - - v i e = 100 a v ce(sat) collector-emitter sa turation voltage op550, op552, op555, op750, op755, op770, op775 op560, op565 - - - - 0.40 1.10 v i c = 100 a, e e = 1.0 mw/cm 2(3) i c = 0.4 ma, e e = 0.1 mw/cm 2(3) see page 2 for notes
optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 05/08 page 5 of 5 npn silicon phototransistor op550, op552, op555, op560, op565, op750, op755 series optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. op552 - typical spectral response 600 700 800 900 1000 1100 20 40 60 80 100 wavelength (nm) relative response (%) op552 - output vs frequency 20 40 60 80 100 frequency (khz) relative output (%) 1 10 100 1000 r l = 10 k r l = 1 k op552 - rise and fall time vs load resistance 0 2 k 4 k 8 k 6 k 10 k 50 100 150 200 250 load resistance (ohms) relative collector current (v) t r t f v cc = 5 v v rl = 1 v f = 100 hz pw = 1 ms op552 - coupling characteristic distance (inches) 0 0.2 0.4 0.6 0.8 1.0 20 40 60 80 100 emitter: op142 i f : 20ma v ce : 5v relative response (%)
|
