smd type transistors 1 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter www.kexin.com.cn silicon npn triple diffusion planar type 2SD2453 features high forward current transfer ratio hfe. low collector-emitter saturation voltage v ce(sat). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 6v collector current i c 2a peak collector current i cp 4a base current i b 1a collector power dissipation ta = 25 1w tc = 25 10 w junction temperature t j 150 storage temperature t stg -55to+150 p c electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter voltage v ceo i c = 25ma, i b =0 60 v collector-base cutoff curent i cbo v cb =80v,i e = 0 100 a collector cutoff curent i ceo v ce =40v,i b = 0 100 a emitter-base cutoff current i ebo v eb =6v,i c = 0 100 a forward current transfer ratio h fe v ce =4v,i c = 0.5 a 500 2500 collector-emitter saturation voltage v ce(sat) i c =2a,i b =0.05a 1 v transition frequency f t v ce =12v,i c =0.2a,f=10mhz 50 mhz h fe classification rank q r s h fe 500 1000 800 1500 1200 2500
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