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| inchange semiconductor product specification silicon npn power transistors 2SD1208 description ? with to-3 package ? wide area of safe operation ? high dc current gain ? darlington applications ? power regulator for line operated tv pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 ? 15 v v ceo collector-emitter voltage open base 60 ? 15 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 5 a i cp collector current (pulse) 20 a p c collector power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1208 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo collector-emitter breakdown voltage i c =100ma ;i b =0 45 75 v v cbo collector-base breakdown voltage i c =100ma ;i e =0 45 75 v v cesat-1 collector-emitter saturation voltage i c =0.5a ;i b =1ma 1.5 v v cesat-2 collector-emitter saturation voltage i c =1a; i b =1ma 2.5 v v be base-emitter on voltage i c =0.5a;v ce =5v 1.8 v i ebo emitter cut-off current v eb =6v; i c =0 0.1 ma h fe dc current gain i c =0.5a ; v ce =5v 2000 20000 inchange semiconductor product specification 3 silicon npn power transistors 2SD1208 package outline fig.2 outline dimentions |
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