2007. 5. 21 1/1 semiconductor technical data ktb1424 epitaxial planar pnp transistor revision no : 2 general purpose darlington transistor. features high dc current gain : h fe =3000(min.) (v ce =-2v, i c =-1a) complementary to ktd2424. maximum rating (ta=25 ) dim millimeters to-220is 0.76+0.09/-0.05 a b c d e f g 0.5+0.1/-0.05 h 1.2+0.25/-0.1 1.5+0.25/-0.1 j k l m n p q r f q 1 2 3 l p n b g j m d n h e r k l s 0.5 typ s d a c 2.70 0.3 + _ 12.0 0.3 + _ 13.6 0.5 + _ 3.7 0.2 + _ 3.2 0.2 + _ 10.0 0.3 + _ 15.0 0.3 + _ 3.0 0.3 + _ 4.5 0.2 + _ 2.54 0.1 + _ + 2.6 0.2 _ 6.8 0.1 + _ 1. base 2. collector 3. emitter electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -10 v collector current i c -3 a base current i b -0.5 a collector power dissipation (tc=25 ) p c 25 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-80v, i e =0 - - -20 a emitter cut-off current i ebo v eb =-10v, i c =0 - - -100 a collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -60 - - v dc current gain h fe (1) v ce =-2v, i c =-1a 3000 - - h fe (2) v ce =-2v, i c =-3a 1000 - - saturation voltage collector-emitter v ce(sat) i c =-3a, i b =-30ma - - -1.5 v base-emitter v be(sat) i c =-3a, i b =-30ma - - -2.8
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