driver & gain block amplifiers - chip 2 2 - 34 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc562 gaas phemt mmic wideband driver amplifier, 2 - 35 ghz v04.1108 general description features functional diagram the hmc562 is a gaas mmic phemt distributed driver ampli er die which operates between 2 and 35 ghz. the ampli er provides 12.5 db of gain, +19 dbm output ip3 and +12 dbm of output power at 1 db gain compression while requiring 80 ma from a +8v supply. the hmc562 is ideal for ew, ecm and radar driver ampli er applications. the hmc562 ampli er i/os are dc blocked and internally matched to 50 ohms facilitating integration into multi- chip-modules (mcms). all data is taken with the chip connected via two 0.075mm (3 mil) ribbon bonds of minimal length 0.31mm (12 mils). p1db output power: +18 dbm gain: 12.5 db output ip3: +27 dbm supply voltage: +8v @ 80 ma 50 ohm matched input/output die size: 3.12 x 1.42 x 0.1 mm typical applications the hmc562 wideband driver is ideal for: ? military & space ? test instrumentation ? fiber optics electrical speci cations, t a = +25 c, vdd= +8v, idd= 80 ma* parameter min. typ. max. min. typ. max. min. typ. max. units frequency range 2.0 - 15.0 15.0 - 27.0 27.0 - 35.0 ghz gain 9.5 12.5 8.5 12 7 10 db gain flatness 0.4 0.35 1.3 db gain variation over temperature 0.01 0.02 0.01 0.02 0.02 0.03 db/ c input return loss 14 13 10 db output return loss 16 15 12 db output power for 1 db compression (p1db) 15 18 14 17 10 14 dbm saturated output power (psat) 21.5 20 16 dbm output third order intercept (ip3) 27 24 22 dbm noise figure 3 3.5 5 db supply current (idd) (vdd= 8v, vgg = -0.8v typ.) 80 100 80 100 80 100 ma * adjust vgg between -2 to 0v to achieve idd= 80 ma typical.
driver & gain block amplifiers - chip 2 2 - 35 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com output return loss vs. temperature gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature noise figure vs. temperature -25 -20 -15 -10 -5 0 5 10 15 0 5 10 15 20 25 30 35 40 s21 s11 s22 response (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 0 4 8 12 16 20 +25c +85c -55c isolation (db) frequency (ghz) -25 -20 -15 -10 -5 0 0 5 10 15 20 25 30 35 +25c +85c -55c return loss (db) frequency (ghz) 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 35 +25c +85c -55c gain (db) frequency (ghz) -25 -20 -15 -10 -5 0 0 5 10 15 20 25 30 35 +25c +85c -55c return loss (db) frequency (ghz) 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 35 +25c +85c -55c noise figure (db) frequency (ghz) hmc562 v04.1108 gaas phemt mmic wideband driver amplifier, 2 - 35 ghz
driver & gain block amplifiers - chip 2 2 - 36 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com gain, power & output ip3 vs. supply voltage @ 10 ghz, fixed vgg p1db vs. temperature psat vs. temperature power compression @ 10 ghz output ip3 vs. temperature power compression @ 30 ghz 10 15 20 25 30 7.5 8 8.5 gain p1db psat ip3 gain (db), p1db (dbm), psat (dbm), ip3 (dbm) vdd supply voltage (v) 0 4 8 12 16 20 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 4 8 12 16 20 24 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 15 20 25 30 35 40 0 5 10 15 20 25 30 35 +25c +85c -55c ip3 (dbm) frequency (ghz) 10 12 14 16 18 20 22 24 0 5 10 15 20 25 30 35 +25c +85c -55c psat (dbm) frequency (ghz) 10 12 14 16 18 20 22 24 0 5 10 15 20 25 30 35 +25c +85c -55c p1db (dbm) frequency (ghz) hmc562 v04.1108 gaas phemt mmic wideband driver amplifier, 2 - 35 ghz
driver & gain block amplifiers - chip 2 2 - 37 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com absolute maximum ratings drain bias voltage (vdd) +10 vdc gate bias voltage (vgg) -2.0 to 0 vdc rf input power (rfin)(vdd = +10 vdc) +23 dbm channel temperature 175 c continuous pdiss (t= 85 c) (derate 26 mw/c above 85 c) 2.3 w thermal resistance (channel to die bottom) 39 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c esd sensitivity (hbm) class 1a vdd (v) idd (ma) +7.5 79 +8 80 +8.5 81 typical supply current vs. vdd electrostatic sensitive device observe handling precautions hmc562 v04.1108 gaas phemt mmic wideband driver amplifier, 2 - 35 ghz
driver & gain block amplifiers - chip 2 2 - 38 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing notes: 1. all dimensions in inches [millimeters] 2. die thickness is 0.004 (0.100) 3. typical bond pad is 0.004 (0.100) square 4. bond pad metalization: gold 5. backside metallization: gold 6. backside metal is ground 7. no connection required for unlabeled bond pads 8. overall die size is .002 die packaging information [1] standard alternate gp-2 [2] [1] refer to the ?packaging information? section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. hmc562 v04.1108 gaas phemt mmic wideband driver amplifier, 2 - 35 ghz
driver & gain block amplifiers - chip 2 2 - 39 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function description interface schematic 1in this pad is ac coupled and matched to 50 ohms 2vdd power supply voltage for ampli er. external bypass capacitors are required. 3out this pad is ac coupled and matched to 50 ohms 4vgg gate control for ampli er. external bypass capacitors are required. please follow mmic ampli er biasing procedure application note. die bottom gnd die bottom must be connected to rf/dc ground. pad descriptions hmc562 v04.1108 gaas phemt mmic wideband driver amplifier, 2 - 35 ghz
driver & gain block amplifiers - chip 2 2 - 40 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application circuit assembly diagram hmc562 v04.1108 gaas phemt mmic wideband driver amplifier, 2 - 35 ghz
driver & gain block amplifiers - chip 2 2 - 41 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protec- tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. c and a tool temperature of 265 deg. c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. c. do not expose the chip to a temperature greater than 320 deg. c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). 0.102mm (0.004) thick gaas mmic ribbon bond 0.076mm (0.003) rf ground plane 0.127mm (0.005) thick alumina thin film substrate figure 1. 0.102mm (0.004) thick gaas mmic ribbon bond 0.076mm (0.003) rf ground plane 0.150mm (0.005) thick moly tab 0.254mm (0.010 thick alumina thin film substrate figure 2. hmc562 v04.1108 gaas phemt mmic wideband driver amplifier, 2 - 35 ghz
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