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advanced sensor technologies for todays breakthrough applications .
perkinelmer optoelectronics provides digital imaging, sensor and lighting technologies to speed the development of breakthrough applications for customers in biomedical, communications and industrial markets. with development and manufacturing centers around the world, the company is able to leverage and align global resources to serve customers through innovation and operational excellence. consistent with perkinelmer optoelectronics?policy of continually updating and improv- ing its products, the type designation and data are subject to change, unless otherwise arranged. no obligations are assumed for notice of change of future manufacture of these devices or materials. copyright?002 perkinelmer optoelectronics. all rights reserved. information furnished by perkinelmer optoelectronics is believed to be accurate and reliable. however, no responsibility is assumed by perkinelmer optoelectronics for its use; nor for any infringements of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent right of perkinelmer, inc.
table of contents photo detectors photon counting modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 channel photomultipliers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 photodiodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 photocells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 ultraviolet detectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 thermopile detectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 pyroelectric infrared detectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 analog optical isolators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 infrared interruptive switches . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 phototransistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 imaging components buffered multiplexers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 image tubes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 line scan imagers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 cmos photodiode arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 cooled ccd arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 tdi imagers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 solid state emitters infrared emitting diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 laser diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 medical sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
description perkinelmer optoelectronics provides photon-counting modules based on both apds and innovative channel photomultipliers. apd based single-photon counting modules the single-photon counting module (spcm) is a self-contained photon counter which covers the wavelength range from 400 nm to 1100 nm, with photon detection efficiencies exceeding 70% at 630 nm. it has an integral 2-stage te cooler, cooler controller, amplifier, discriminator and ttl output driver. it also contains a high-voltage dc-to-dc converter and is powered from a single 5 v source. the module utilizes a patented active-quench circuit which allows it to count over 10 million photons per second. the photosensitive area is 0.2 mm, and units are available with dark-count rates less than 25 counts/second. spcm-aq4c single-photon counting array the spcm-aq4c is a 4-channel photon-counting card capable of detecting single photons of light over a wavelength range from 400 nm to 1160 nm. each channel is independent from the others. the spcm-aq4c utilizes a unique silicon avalanche photodiode (slik ) with a circular active area whose peak photon-de tection efficiency exceeds 60% at 650 nm. each photodiode is both thermoelectrically cooled and temperature controlled, ensuring stabilized performance despite changes in the ambient temperature. photon counting modules features peak photon-detection efficiency @ 650 nm: 70% typical active area: spcm-aqr-1x: 175 ? ? timing resolution of 350 ps fwhm ?user friendly ?gated input ? single +5 v supply typical applications ?lidar ?photon-correlation spectroscopy ?astronomical observation ? optical range finding ?adaptive optics ?ultra-sensitive fluorescence ?particle sizing datasheets available upon request 2 www.optoelectronics.perkinelmer.com
single-photon counting module?pcm spcm-aq4c single-photon counting array www.optoelectronics.perkinelmer.com 3 photon counting modules parameter typical parameter typical supply current 0.5 amps supply voltage 5 v power cable total resistance 0.2 ? case operating temperature 5-40? active area (diameter) @ min. pd 175 ? photon detection efficiency (pd) @ quantum efficiency 400 nm 5% 400 nm 2% 650 nm 70% 650 nm 90% 830 nm 50% 830 nm 92% 1060 nm 2% 1060 nm 18% pd variation at constant case ?-?% pd variation 5 c to 40 c case ?-?0% temperature (2 h @ 25 c) temperature dark count (cps) = dark count (cps) = spcm-aqr-12 250-500 spcm-aqr-15 50 max. spcm-aqr-13 150-250 spcm-aqr-16 25 max. spcm-aqr-14 50-100 average dark count variation average dark count variation at constant case temperature at 5? to 40? case (6 hrs @ 25?) temperature spcm-aqr-12/13 ?0% max. spcm-aqr-12/13 ?0% max. spcm-aqr-14/15/16 ? max . spcm-aqr-14/15/16 ? max. single-photon timing 350 ps @ fwhm dead time (count rates 50 ns resolution below 5 mc/s) output count rate before saturation 15 mc/s afterpulsing probability 0.3% linearity correction factor gating turn on/off @200 kc/s 1.01 (50 ? output) @1 mc/s 1.08 disable = ttl low 2 ns @5 mc/s 1.4 enable = ttl high 45 ns settling time following power threshold setting required on up (1% stability) @ 1 meg 15 s counter for digital output 1 v counts/sec and 25? pulse (terminate in 50 ? ) gate threshold voltage: gate threshold voltage: (@ v supply = 5 v) (@ v supply = 5 v) low level (sink current >90 ma) 0 v-0.4 v high level (sink current >30 ma) 3.5-5.25 v spcm-aqr-1x series technical specification parameter typical parameter typical supply currents: maximum power consumption: counts/second @+2 v 1 amp @+2 v 6 watts max. @+5 v 0.25 amps @+5 v 5 watts max. @+30 v 0.01 amps @+30 v 1.2 watts max. supply voltage photon detection efficiency (per channel) 1.95 v-2.05 v @400 nm 5% 4.75 v-5.25 v @650 nm 65% 29 v-31 v @830 nm 25% operating temperature (heatsink) 5?c-40?c dark count (per channel) 1000 counts/sec. average dark count variation per 10% average dark count variation per 20% channel @ constant heatsink temp. c hannel @ 5? to 40?c heatsink temp. single-photon counting resolution 350 ps @ fwhm dead time 50 ns-60 ns output pulse width 30 ns maximum count rate 1 mc/s-2 mc/s continuous 1 mc/s afterpulsing probability 0.3% gate threshold voltage: gate threshold voltage: (@ v supply = 5 v) (@ v supply = 5 v) low level (sink current >90 ma) 0 v-0.4 v high level (source current >30 ma) 3.5 v-5.25 v spcm-aq4c technical specification test conditions: t=22?c test conditions: t=22?c
description perkinelmer optoelectronics?channel photomultiplier (cpm) is an ultra-high sensitivity optical detector capable of replacing conventional photomultipliers (pmts). this device uses a proprietary detector principle to produce ultra-high gain and dynamic range, extremely low noise, and fast response within a compact form factor. these detectors are available as components or in complete modules designed for dc operation and photon counting. all modules are gateable by an external ttl pulse for time-resolved measurements. modules md series dc-module?ontains the cpm, a high-voltage power supply, an amplifier with i/u conversion, and an active quenching cir cuit for high light protection. mp series photon counting module the photon counting head mp 900 contains the channel photomultiplier, a high- voltage power supply, a discrimination amplifier and a pulse shaper for fast output pulses. mh series channel photomultiplier head module?he channel photomultiplier module mh 900 series is designed for both photon counting and dc operating modes. it contains an adjustable high-voltage supply and a channel photomulti- plier of the c900 series. ? mp 96x-2, mp 97x-2 single photon counting module these modules are specially designed for particle measurement with 530 nm and 632 nm lasers. based on the standard multialkali photocathode, the sensitive diameter is reduced to 2 mm in order to achieve an excellent low dark- count performance. power supply chv 30n? self-contained high-voltage supply specially designed for the channel photomultipliers cpm c900, c1300 and c1900. it provides the matching voltages for the cathode, channel entrance, and channel end. chv 30p?he equivalent power supply for positive high voltage. all given values are nominal/typical at 20?c ambient temperature; specifications are subject to change without notice. principle of operation the cpm converts a very low light level into photoelectrons through a semitransparent photocathode deposited on the inner surface of the entrance window. on their way from the cathode to the anode, the photoelectrons pass through a narrow semiconductive channel. each time the electrons hit the inner surface of the curved channel, multiple sec- ondary electrons are emitted. this ef fect occurs multiple times along the path, leading to an avalanche effect with a gain exceed- ing 10 8 . the curved shape of the glass tube improves the multiplica- tion effect. channel photomultipliers 4 www.optoelectronics.perkinelmer.com cpm features ? ultra-high anode sensitivity up to 10 7 a/w ? extremely low dark current, typically 3 pa @ 10 6 gain ? very low equivalent noise input (down to 10 -17 w) high stability in dark current (?o bursts? ? high gain exceeding 10 8 ?compact dimensions ? high dynamic range ? wide spectral response through multiple window materials ?high resolution ?fast response time ? high immunity to magnetic fields ?rugged design module features ? high dynamic range ? no cooling required ? very high stability in noise level ?adjustable gain ? active quenching circuit for high light protection ? gateable cpm input (only bialkali types) ? optical fiber read-out possible ? 5 volts operating voltage ? monitor voltage output typical applications photon detection and counting fluorescence measurements analytical and clinical instrumentation bioluminescence high-energy physics available related products cpm: 1/3" c900 series 1/2" c1300 series 3/4" c1900 series cpm modules: md series mp series mh series mp 96x-2, mp 97x-2 high voltage power supply: chv 30n chv 30p datasheets available upon request
channel photomultipliers www.optoelectronics.perkinelmer.com 5 channel photomultipliers cpm formats 1/2"and 3/4" useful area: min. 5 mm photocathode material: csi, cste, low-noise bialkali, bialkali, window material: mgf 2 , quartz or uv glass low-noise multialk., multialk. or extended red multialk. electron multiplication: channel electron multiplier supply voltage (v): 2400 (max. 3000) current amplification: 5x10 7 linear anode current: max. (dc linearity limit) 10% of bias current bias current ( a): 50 response time rise time (ns): 3 anode current: max. 10 a (max. 30 sec.) pulse width/fwhm (ns): 6 single photo electron gain: 3x10 6 peak to valley: 10:1 ambient temperature ( c): max. 50 spectral dark counts response @140 nm @200 nm @400 nm @560 nm dark current per second /nm model a/w a/w a/w a/w eni (w) pa model ( cps) 115-200 c911 6x10 5 1x10 -17 2 c911p 0.1 115-200 c921 1x10 6 1x10 -17 10 c921p 1 165-320 c922 1x10 6 1x10 -17 10 c922p 1 165-650 c942 3x10 6 1x10 -17 80 c942p 10 185-650 c943 3x10 6 1x10 -17 80 c943p 10 300-650 c944 3x10 6 1x10 -17 80 c944p 10 165-750 c952 3x10 6 2.5x10 -17 250 c952p 40 185-750 c953 3x10 6 2.5x10 -17 250 c953p 40 165-850 c962 2x10 6 4x10 -17 1000 c962p 100 185-850 c963 2x10 6 4x10 -17 1000 c963p 100 165-900 c972 2x10 6 1.5x10 -16 5000 c972p 500 185-900 c973 2x10 6 1.5x10 -16 5000 c973p 500 165-650 c982 3x10 5 6x10 -18 25 c982p 3 185-650 c983 3x10 5 6x10 -18 25 c983p 3 cpm?/3" c 900 series technical specification useful area: min. 9 mm photocathode material: csi, cste, low-noise bialkali, bialkali, window material: mgf 2 , quartz, uv glass or borosil. low-noise, multialk., multialk. or extended red multialk. supply voltage (v): 2400 (max. 3000) current amplification: 5x10 7 bias current ( a): 50 linear anode current: max. (dc linearity limit) 10% of bias current response time rise time (ns): 3 anode current: max. 10 a (max. 30 sec.) pulse width/fwhm (ns): 6 single photoelectron gain: 3x10 6 peak to valley: 10:1 ambient temperature ( c): max. 50 spectral dark counts response @140 nm @200 nm @400 nm @560 nm dark current per second /nm model a/w a/w a/w a/w eni (w) pa model ( cps) 115-200 c1311 6x10 5 2x10 -17 8 c1311p 0.4 115-320 c1321 1x10 6 2x10 -17 40 c1321p 4 165-320 c1322 1x10 6 2x10 -17 40 c1322p 4 165-650 c1342 3x10 6 2x10 -17 320 c1342p 40 185-650 c1343 3x10 6 2x10 -17 320 c1343p 40 300-650 c 1344 3x10 6 2x10 -17 320 c1344p 40 165-750 c1352 3x10 6 4x10 -17 1000 c 1352p 160 185-750 c1353 3x10 6 4x10 -17 1000 c1353p 160 165-850 c1362 2x10 6 8x10 -17 4000 c1362p 400 185-850 c1363 2x10 6 8x10 -17 4000 c1363p 400 165-900 c1372 2x10 6 3x10 -16 20000 c1372p 2000 185-900 c1373 2x10 6 3x10 -16 20000 c1373p 2000 165-650 c1382 3x10 6 1x10 -17 100 c1382p 10 185-650 c1383 3x10 6 1x10 -17 100 c1383p 10 cpm?/2" c 1300 series technical specification channel photomultipliers cpm format 1/3"
channel photomultipliers test conditions: t = 20?c voltage channel entrance: v set =0-2.9 v voltage cathode: v gate =low or open long-term stability @ v set : <<1 e-5 weight: 45 g operating temperature: 0-50? storage temperature: -20-60? 6 www.optoelectronics.perkinelmer.com useful area: min. 15 mm photocathode material: csi, cste, low-noise bialkali, bialkali, window material: mgf 2 , quartz, uv glass or borosil. low-noise multialk., multialk. or extended red multialk. electron multiplication: channel electron multiplier supply voltage (v): 2400 (max. 3000) current amplification: 5x10 7 linear anode current: max. (dc linearity limit) 10% of bias current bias current ( a): 50 response time rise time (ns): 3 anode current: max. 10 a (max. 30 sec.) pulse width/fwhm (ns): 6 single photoelectron gain: 3x10 6 peak to valley: 10:1 ambient temperature ( c): max. 50 spectral dark counts response @140 nm @200 nm @400 nm @560 nm dark current per second /nm model a/w aw a/w a/w eni (w) pa model ( cps) 115-200 c1911 6x10 5 3x10 -17 20 c1911p 1 115-320 c1921 1x10 6 3x10 -17 100 c1921p 10 165-320 c1922 1x10 6 3x10 -17 100 c1922p 10 165-650 c1942 3x10 6 3x10 -17 800 c1942p 100 185-650 c1943 3x10 6 3x10 -17 800 c1943p 100 300-650 c1944 3x10 6 3x10 -17 800 c1944p 100 165-750 c1952 3x10 6 8x10 -17 2500 c1952p 400 185-750 c1953 3x10 6 8x10 -17 2500 c1953p 400 165-850 c1962 2x10 6 1x10 -16 10000 c1962p 1000 185-850 c1963 2x10 6 1x10 -16 10000 c1963p 1000 165-900 c1972 2x10 6 5x10 -16 50000 c1972p 5000 185-900 c1973 2x10 6 5x10 -16 50000 c1973p 5000 165-650 c1982 3x10 6 2x10 -17 250 c1982p 25 185-650 c1983 3x10 6 2x10 -17 250 c1983p 25 cpm?/4" c 1900 series technical specification part voltage channel v oltage output long term output supply number entrance cathode current stability typ. ripple typ. v oltage chv30n -2900 v max. -3000 v max. 100 ? max. < 1e-5 < 50 mv pp 5 v power supply?hv30n technical specification test conditions: t = 20?c voltage anode: @ v set =0-3 v voltage cathode: 190 v?hen gated voltage channel entrance: @ v a 1400 v long-term stability @ v set : <<1 e-5 weight: 45 g operating temperature: 0-50? storage temperature: -20-60? part voltage v oltage voltage channel output long term output supply number anode cathode typ. entrance typ. current stability typ. ripple typ. v oltage chv30p +3000 v max. 0 v 140 v 100 ? max. < 1e-5 < 30 mv pp 5 v power supply?hv30p technical specification power supply chv30n, chv30p
photocathode diameter: 5 mm (mp 9xx-2 types: 2 mm) photocathode material: low-noise bialkali, bialkali, low-noise multialk., window material: quartz or uv glass multialk. or extended red multialk. additional models on request quantum efficiency: 20% typical (ext. red ma: 10% typical) www.optoelectronics.perkinelmer.com 7 channel photomultipliers photocathode diameter: min. 9 mm photocathode material: low-noise bialkali, bialkali, low-noise multialk., window material: quartz or uv glass multialk. or extended red multialk. additional models on request quantum efficiency: 20% typical (ext. red ma: 10% typical) cpm module formats 1/3", 1/2", 3/4" spectral dark current/offset dark counts dark current dark counts response voltage @1x10 6 gain per second pa per second /nm model eni (w) & 1 v/20 na model (cps) model @ 5x10 7 gain model eni (w) (cps) 165-650 md 942 1x10 -17 3 pa/150 v mp 942 10 mh 942 80 mh 942p 1x10 -17 10 185-650 md 943 1x10 -17 3 pa/150 v mp 943 10 mh 943 80 mh 943p 1x10 -17 10 165-750 md 952 2.5x10 -17 10 pa/500 v mp 952 40 mh 952 250 mh 952p 2.56x10 -17 40 185-750 md 953 2.5x10 -17 10 pa/500 v mp 953 40 mh 953 250 mh 953p 2.5x10 -17 40 165-850 md 962 4x10 -17 30 pa/1.5 mv mp 962 100 mh 962 1000 mh 962p 4x10 -17 100 mp 962-2 40 185-850 md 963 4x10 -17 30 pa/1.5 mv mp 963 100 mh 963 1000 mh 963p 4x10 -17 100 mp 963-2 40 165-900 md 972 1.5x10 -16 200 pa/10 mv mp 972 500 mh 972 5000 mh 972p 1.5x10 -16 400 mp 972-2 160 185-900 md 973 1.5x10 -16 200 pa/10 mv mp 973 500 mh 973 5000 mh 973p 1.5x10 -16 400 mp 973-2 160 165-650 md 982 6x10 -18 1 pa/50 v mp 982 3 mh 982 25 mh 982p 6x10 -18 3 185-650 md 983 6x10 -18 1 pa/50 v mp 983 3 mh 983 25 mh 983p 6x10 -18 3 cpm module?/3" 900 series technical specification spectral dark current/offset dark counts dark current dark counts response voltage @1x10 6 gain per second pa per second /nm model eni (w) & 1 v/20 na model (cps) model @ 5x10 7 gain model eni (w) (cps) 165-650 md1342 2x10 -17 12 pa/600 v mp1342 40 mh1342 320 mh1342p 2x10 -17 40 185-650 md1343 2x10 -17 12 pa/600 v mp1343 40 mh1343 320 mh1343p 2x10 -17 40 165-750 md1352 4x10 -17 40 pa/2 mv mp1352 160 mh1352 1000 mh1352p 4x10 -17 160 185-750 md1353 4x10 -17 40 pa/2 mv mp1353 160 mh1353 1000 mh1353p 4x10 -17 160 165-850 md1362 8x10 -17 120 pa/6 mv mp1362 400 mh1362 4000 mh1362p 8x10 -17 400 185-850 md1363 8x10 -17 120 pa/6 mv mp1363 400 mh1363 4000 mh1363p 8x10 -17 400 165-900 md1372 3x10 -16 800 pa/40 mv mp1372 2000 mh1372 20000 mh1372p 3x10 -16 2000 185-900 md1373 3x10 -16 800 pa/40 mv mp1373 2000 mh1373 20000 mh1373p 3x10 -16 2000 165-650 md1382 1x10 -17 4 pa/200 v mp1382 10 mh1382 100 mh1382p 1x10 -17 10 185-650 md1383 1x10 -17 4 pa/200 v mp1383 10 mh1383 100 mh1383p 1x10 -17 10 cpm module?/2" 1300 series technical specification photocathode diameter: min. 15 mm photocathode material: low-noise bialkali, bialkali, low-noise multialk., window material: quartz or uv glass multialk. or extended red multialk. additional models on request quantum efficiency: 20% typical (ext. red ma: 10% typical) spectral dark current/offset dark counts dark current dark counts response voltage @1x10 6 gain per second pa per second /nm model eni (w) & 1 v/20 na model (cps) model @ 5x10 7 gain model eni (w) (cps) 165-650 md1942 3x10 -17 30 pa/1.5 mv mp1942 100 mh 1942 800 mh 1942p 3x10 -17 100 185-650 md1943 3x10 -17 30 pa/1.5 mv mp1943 100 mh1943 800 mh1943p 3x10 -17 100 165-750 md1952 8x10 -17 100 pa/5 mv mp1952 400 mh1952 2500 mh1952p 8x10 -17 400 185-750 md1953 8x10 -17 100 pa/5 mv mp1953 400 mh1953 2500 mh1953p 8x10 -17 400 165-850 md1962 1x10 -16 300 pa/15 mv mp1962 1000 mh1962 10000 mh1962p 1x10 -16 1000 185-850 md1963 1x10 -16 300 pa/15 mv mp1963 1000 mh1963 10000 mh1963p 1x10 -16 1000 165-900 md1972 5x10 -16 2 na/100 mv mp1972 5000 mh1972 50000 mh1972p 5x10 -16 5000 185-900 md1973 5x10 -16 2 na/100 mv mp1973 5000 mh1973 50000 mh1973p 5x10 -16 5000 165-650 md1982 2x10 -17 10 pa/500 v mp1982 25 mh1982 250 mh1982p 2x10 -17 25 185-650 md1983 2x10 -17 10 pa/500 v mp1983 25 mh1983 250 mh1983p 2x10 -17 25 cpm module?/4" 1900 series technical specification cpm modules 3/4" 1900 series
description perkinelmer optoelectronics offers a broad array of silicon and ingaas pin and apds. ingaas avalanche photodiodes the high-quality ingaas avalanche photodiodes (apds) are packaged in hermetically sealed to cans and ceramic blocks designed for the 900 to 1700 nm wavelength region. ingaas pin photodiodes high-quality indium gallium arsenide photodiodes designed for the 900 to 1700 nm wavelength region, these photodiodes are available in standard sizes ranging from 50 microns to 5 mm in diameter. packages include ceramic submount, to packages, and chip form. silicon avalanche photodiodes these are reliable, high-quality detectors in hermetically sealed to packages designed for high-speed and high-gain applications. a ?each-through?structure is utilized which provides very low noise performance at high gains, and a full range of active areas is available. silicon pin photodiodes offered for low- to high-speed applications, these pins are designed for the 250 nm to 1100 nm range. standard sizes range from 100 microns to 10 mm in diameter. silicon pn photodiodes this format includes a variety of high-volume, low-cost silicon photodiodes that meet the demanding requirements of todays commercial and consumer markets. alternate source/second source photodiodes perkinelmers nearest equivalent devices are selected on the basis of general similarity of electro-optical characteristics and mechanical configuration. interchangeability in any particular application is not guaranteed, suitability should be determined by the customer's own evaluation. detector modules preamplifier modules are hybrid devices with a photodiode and a matching amplifier in a compact hermetic to package. an integral amplifier allows for better ease of use and noise bandwidth performance. 14-pin, dil, and/or fibered packaged modules are available on a custom basis. photodiodes features low-cost visible and near-ir photodetector excellent linearity in output photocurrent over 7 to 9 decades of light intensity fast response times available in a wide range of packages including epoxy-coated, transfer-molded, cast, and hermetic packages, as well as in chip form low noise mechanically rugged, yet compact and lightweight available as duals, quads or as linear arrays usable with almost any visible or near-infrared light source such as solid state laser diodes, neon, fluorescent, incandescent bulbs, lasers, flame sources, sunlight, etc. can be designed and tested to meet the requirements of your application typical applications ?fiber-optic communications ?instrumentation ?high-speed switching ? spot position tracking and measurement ?photometry ?data transmission ? uv light meters ? fluorescent light detection ? laser range finding ?barcode scanning ? laser safety scanning ?distance measurement datasheets available upon request 8 www.optoelectronics.perkinelmer.com
www.optoelectronics.perkinelmer.com 9 photodiodes indium gallium arsenide pin photodiodes, large-area, and small-area indium gallium arsenide apds high responsivity low capacitance for high bandwidths ? available in various hermetic packages photo sens. resp. dark spect. noise cap. bandwidth nep @ bias volt part standard diam. a/w curr. curr. dens. @100 khz ghz 1550 nm for these number package ? @1300 nm @1550 nm id (na) in (pa/ hz) cd (pf) into 50 w pw/ hz specs v c30616ecer ceramic 50 0.86 0.95 0.5 <0.02 0.35 >3.5 <0.02 5 c30637ecer ceramic 75 0.86 0.95 0.8 <0.02 0.4 3.5 <0.02 5 c30617ecer ceramic 100 0.86 0.95 1 <0.02 0.55 3.5 <0.02 5 c30617b ball lens 100 0.8 0.9 1 <0.02 0.8 3.5 <0.02 5 c30618ecer ceramic 350 0.86 0.95 2 0.02 4 0.8 0.02 5 c30618g to window 350 0.86 0.95 2 0.02 4 0.8 0.02 5 ingaas pin small-area?00 nm to 1700 nm technical specification test conditions: t = 22? photo sens. resp. dark spect. noise cap. bandwidth nep @ vop part standard diam. a/w curr. curr. dens. @100 khz ghz 1550 nm for number package ? @1300 nm @1550 nm id (na) in (pa/ hz) cd (pf) into 50 w pw/ hz gain=10 v c30644e to window 50 8.4 9.4 6 0.15 1 2 0.03 40-90 c30644ecer ceramic 50 8.4 9.4 6 0.15 0.8 2 0.03 40-90 c30645e to window 80 8.4 9.4 10 0.25 1.2 1 0.13 40-90 c30645ecer ceramic 80 8.4 9.4 10 0.25 1 1 0.13 40-90 c30662e to window 200 8.4 9.4 200 1.4 2.5 0.2 0.15 40-90 c30662ecer ceramic 200 8.4 9.4 200 1.4 2.5 0.2 0.15 40-90 c30733ecer ceramic 30 8.4 9.4 5 <0.1 0.25 3 0.01 40-90 ingaas apds?00 nm to 1700 nm technical specification test conditions: t = 22? photo sens. resp. dark nep @ cap. bandwidth max. power bias volt part standard diam. a/w curr. 1300 nm @100 khz mhz for .15 db for these number package mm @850 nm @1300 nm @1550 nm id (na) pw/ hz cd (pf) into 50 w linearity (dbm) specs v c30619g to-18 0.5 0.2 0.86 0.95 5 <0.1 8 350 >+13 5 c30641g to-18 1 0.2 0.86 0.95 5 <0.1 40 75 >+13 2 c30642g to-5 2 0.2 0.86 0.95 10 0.1 350 20 +11 0 c30665g to-5 3 0.2 0.86 0.95 25 0.2 1000 3 +11 0 c30723g to-8 5 0.2 0.86 0.95 30 0.3 2500 2.5 +11 0 ingaas pin large-area?00 nm to 1700 nm technical specification test conditions: t = 22?
photodiodes 10 www.optoelectronics.perkinelmer.com silicon avalanche photodiodes hermetically sealed packages photo resp. dark spect. noise cap. resp. nep @ vop part standard sens. diam. 900 nm curr. curr. dens. @100 khz: time 900 nm range number package mm a/w id (na) in (pa/ hz) cd (pf) tr (ns) fw/ hz v c30817e to-5 0.8 75 50 0.5 2 2 7 275-425 c30872e to-8 3 45 100 0.5 10 2 11 275-425 c30902e to-18 0.5 77 (@ 830 nm) 15 0.23 1.6 0.05 3 (@ 830 nm) 180-250 c30902s to-18 0.5 128 (@ 830 nm) 15 0.11 1.6 0.05 0.86 (@ 830 nm) 180-250 c30916e to-5 1.5 70 100 0.5 3 2 8 275-425 si apd?tandard types?00 nm to 1100 nm technical specification test conditions: t = 22? photo resp. dark spect. noise cap. resp. nep @ vop part standard sens. diam. @900 nm curr. curr. dens. @100 khz time 900 nm range number package mm a/w id (na) in (pa/ hz) cd (pf) tr (ns) fw/ hz v c30724e to-18 0.5 9 (@ m=15) 25 0.1 1 5 11 120-200 c30724p plastic 0.5 9 (@ m=15) 25 0.1 1 5 11 120-200 c30737e to-18 0.5 47 (@ i-800 nm 20 0.3 2.5 0.3 6.4 (@ 800 nm 120-200 m=100) m=100) si apd?ow cost, high volume?00 nm to 1000 nm technical specification test conditions: t = 22? photo resp. dark spect. noise cap. resp. nep @ adp vop part standard sens. diam. @830 nm curr. curr. dens. @100 khz time 830 nm range number package mm a/w id (na) in (pa/ hz) cd (pf) tr (ns) fw/ hz v c30902s-tc to-66 0.5 128 2 0.04 1.6 0.5 0.3 160-250 c30902s-dtc to-66 0.5 128 1 0.02 1.6 0.5 0.16 160-250 si apd?e-cooled technical specification test conditions: t = 0? for -tc and -20? for -dtc adp vop range: temperature dependent photo resp. dark spect. noise cap. resp. nep @ vop part standard sens. diam. @830 nm curr. curr. dens. @100 khz time 830 nm range number package mm a/w id (na) in (pa/ hz) cd (pf) tr (ns) fw/ hz v c30927e-01 to-8 1.5 total 62 (@900 nm) 25 0.25 1 3 16 (@900 nm) 275-425 c30927e-02 to-8 1.5 total 62 (@900 nm) 25 0.25 1 3 16 (@900 nm) 275-425 c30927e-03 to-8 1.5 total 62 (@900 nm) 25 0.25 1 3 16 (@900 nm) 275-425 c30985e custom 0.3 pitch 31 1 0.1 0.5 2 3 250-425 si apd?rrays quadrant and linear?00 nm to 1100 nm technical specification test conditions: t = 22?
www.optoelectronics.perkinelmer.com 11 photodiodes photo resp. dark spect. noise cap. resp. nep @ vop part standard sens. diam. @830 nm curr. curr. dens. @100 khz time 830 nm range number package mm a/w id (na) in (pa/ hz) cd (pf) tr (ns) fw/ hz v c30921e to-18 0.5 77 15 0.23 1.6 0.05 3 180-250 c30921s to-18 0.5 128 15 0.11 1.6 0.05 0.86 180-250 si apd?ightpipe technical specification test conditions: t = 22? photo resp. dark spect. noise cap. resp. nep @ vop part standard sens. diam. @1060 nm curr. curr. dens. @100 khz time 900 nm m=15 range number package mm a/w id (na) in (pa/ hz) cd (pf) tr (ns) fw/ hz v c30954e to-5 0.8 36 50 0.5 2 2 14 275-425 c30955e to-5 1.5 34 100 0.5 3 2 15 275-425 c30956e to-8 3 25 100 0.5 10 2 20 275-425 si apd?ir-enhanced?00 nm to 1100 nm technical specification test conditions: t = 22? photo dark spect. noise cap. resp. nep @ vop part sens. diam. resp. curr. curr. dens. @100 khz time peak range number mm a/w id (na) in (pa/ hz) cd (pf) tr (ns) fw/ hz v c30626 5x5 22 (@900 nm) 250 0.5 30 5 23 (@900 nm) 275-425 c30703 10x10 16 (@530 nm) 10 0.7 120 5 40 (@530 nm) 275-425 si apd?adiation detection technical specification test conditions: t = 22? silicon avalanche photodiodes low cost, high volume
silicon pin photodiodes and modules broad range of photosensitive areas low operating voltage ? hermetically sealed packages photodiodes 12 www.optoelectronics.perkinelmer.com photo resp. dark spect. noise cap. resp. nep @ bias volt part standard sens. diam. @830 nm curr. id curr. dens. @100 khz time 830 nm for these number package mm a/w na in (fa/ hz) cd (pf) tr (ns) fw/ hz specs v c30971e to-18 0.5 0.5 10 57 1.6 0.5 113 100 c30971el to-18 lightpipe 0.25 0.5 10 57 1.6 0.5 113 100 si pins?indow and lightpipe packages, fast response?00 nm to 1100 nm technical specification test conditions: t = 22?c photo resp. dark spect. noise cap. resp. nep @ bias volt part standard sens. diam. @900 nm curr. id curr. dens. @100 khz time 900 nm for these number package mm a/w na (fa/ hz) cd (pf) tr (ns) fw/ hz specs v FFD-100 to-5 2.5 0.58 2 25 8.5 3.5 44 15 ffd-200 to-8 5.1 0.58 4 36 30 5 62 15 si pins?arge area, fast response?00 nm to 1100 nm technical specification test conditions: t = 22?c photo resp. dark spect. noise cap. resp. nep @ bias volt part standard sens. diam. @900 nm curr. id curr. dens. @100 khz time 900 nm for these number package total mm a/w na in (fa/ hz) cd (pf) tr (ns) fw/ hz specs v c30845e to-5 8 0.6 7 47 8 6 79 45 uv-140bq-4 to-5 1.3x1.3 (x4) 0.58 4 34 <1 ?ec 7 0 yag-444-4a custom 11.4 0.4 @1.06 ? 40 118 9 25 295 180 si pins?uadrant?20 nm to 1100 nm technical specification test conditions: t = 22?c photo resp. dark spect. noise cap. resp. nep @ bias volt part standard sens. diam. @900 nm curr. id curr. dens. @100 khz time 900 nm for these number package mm a/w na in (fa/ hz) cd (pf) tr (ns) fw/ hz specs v c30807e to-18 1 0.6 1 18 2.5 3 30 45 c30808e to-5 2.5 0.6 3 31 6 5 52 45 c30822e to-8 5 0.6 5 40 17 7 67 45 c30809e to-8 8 0.6 7 47 35 10 79 45 c30810e custom 11.4 0.6 30 98 70 12 163 45 si pins?tandard n-type?00 nm to 1100 nm technical specification test conditions: t = 22?c
photo resp. shunt spect. noise cap. nep @ part standard sens. diam. a/w resis. curr. dens.: @100 khz: 900 nm number package mm @250 nm @900 nm rd mw in (fw/ hz) cd (pf) fa/ hz uv-040bq to-8 1 0.12 0.58 2000 3 25 5 uv-100bq to-8 2.5 0.12 0.58 1000 4 120 7 uv-215bq to-8 5.4 0.12 0.58 250 8 450 25 uv-245bq to-8 4.4x4.7 0.12 0.58 375 7 375 20 uv-140bq-2 to-5 2.5x1.3 (x2) 0.12 0.58 1000 4 68 7 uv-140bq-4 to-5 1.3x1.3 (x4) 0.12 0.58 1000 4 34 7 si pins?v enhanced, low noise?20 nm to 1100 nm technical specification test conditions: t = 22?c silicon pins?v enhanced www.optoelectronics.perkinelmer.com 13 photodiodes photo resp. spect. noise nep @ bandwidth bias volt part standard sens. diam. mv/w volt. dens. 900 nm khz for these number package mm @250 nm @900 nm vn (?/ hz) pw/ hz into 50 w specs v huv-2000b custom 5.4 24 116 2.5 0.02 2 0 huv-1100bg to-5 2.5 24 116 20 0.17 20 0 si pin modules?ow bandwidth? khz to 50 khz technical specification test conditions: t = 22? pin photo sens. resp. lin. spect. noise nep bandwidth photo. diod. part or apd standard diam. kv/w volt. out volt. dens. @900 nm mhz (3 db, bias number used package mm @900 nm swing (v) vn (nv/ hz) pw/ hz into 50 w) volt v c30608e c30971 to-5 0.5 32 (@ 830 nm) 0.7 60 1.8 (@ 830 nm) 50 12 c30659-1550-r2a c30662 to-8 0.2 340 (@ 1550 nm) 2 35 0.103 (@ 1550 nm) 50 40-90 c30950e c30817 to-8 0.8 560 0.7 20 .036 50 275-425 c30919e c30817 custom 0.8 1000 0.7 25 .025 40 275-425 si pin modules?igh bandwidth?0 mhz to 100 mhz technical specification test conditions: t = 22?
photodiodes 14 www.optoelectronics.perkinelmer.com part i sc tc i sc v oc tc v oc i d r sh c j re s r range p v br number ? %/?c mv mv/?c na max. g ? pf a/ ( w/cm 2 ) a/w nm nm v vtp100 55 0.24 300 -2 30 0.25 50 max. 0.047 0.5 725-1150 925 140 vtp100c 70 0.2 350 -2 30 0.25 50 max. 0.05 0.55 400-1150 925 140 vtp1012 17 0.2 350 -2 7 0.5 6 max. 0.011 0.55 400-1150 925 140 vtp1112 90 0.2 350 -2 7 0.5 6 max. 0.033 0.55 400-1150 925 140 vtp1188s 200 0.2 0.33 -2 30 67 0.18 0.55 400-1100 925 vtp1232 100 min. 0.2 0.42 min. -2 25 ?0.18 0.076 0.6 400-1100 920 vtp3310la 36 0.2 350 -2 35 10 25 max. 0.015 0.55 400-1150 925 140 vtp3410la 22 0.26 350 -2 35 10 25 max. 0.013 0.55 700-1150 925 140 vtp4085 200 0.2 0.33 -2 100 2 0.35 0.55 400-1100 925 vtp4085s 200 0.2 0.33 -2 50 4 0.35 0.55 400-1100 925 vtp5050 70 0.2 350 -2 18 0.25 24 max. 0.05 0.55 400-1150 925 140 vtp6060 200 0.2 350 -2 35 100 60 max. 0.14 0.55 400-1150 925 140 vtp7110 9 0.2 350 -2 35 7 25 max. 0.015 0.55 400-1150 925 140 vtp7210 7 0.26 350 -2 35 7 25 max. 0.015 0.55 700-1150 925 140 vtp7840 70 0.2 325 -2 20 0.25 40 max. 0.55 725-1150 925 1@10 ma vtp8350 80 0.2 350 -2 30 100 50 max. 0.06 0.55 400-1150 925 140 vtp8440 55 0.2 350 -2 15 0.5 15 max. 0.025 0.55 400-1150 925 140 vtp8551 70 0.2 350 -2 30 0.15 50 max. 0.05 0.55 400-1150 925 140 vtp8651 55 0.24 300 -2 30 0.15 50 max. 0.045 0.5 725-1150 925 140 vtp9412 17 0.2 350 -2 7 0.4 6 max. 0.011 0.55 400-1150 925 140 silicon pn?tp series technical specification part i sc tc i sc i d tc i d r sh c j s r re t r /t f v oc tc v oc number ma %/?c ? %/?c m ? nf a/w a/ ( w/cm 2 ) ?ec v mv/?c vts__80 3 0.2 0.2 +11 0.3 7.5 0.2 0.7 13 0.45 -2.6 vts__81 1.5 0.2 100 +11 0.6 3.5 0.2 0.34 6.4 0.45 -2.6 vts__82 0.69 0.2 0.05 +11 1.2 1.75 0.2 0.16 3.4 0.45 -2.6 vts__83 0.64 0.2 50 +11 1.2 1.75 0.2 0.15 3.4 0.45 -2.6 vts__84 0.33 0.2 40 +11 1.5 1 0.2 0.07 1.8 0.45 -2.6 vts__85 0.16 0.2 0.02 +11 3 0.5 0.2 0.04 1.2 0.45 -2.6 vts__86 0.080 0.2 10 +11 6 0.25 0.2 0.02 0.75 0.45 -2.6 silicon pn?ts series technical specification table key i sc short-circuit current h=100 fc, 2850 k tc i sc i sc temperature coefficient, 2850 k v oc open-circuit voltage h=100 fc, 2850 k tc v oc v oc temperature coefficient, 2850 k i d dark current h=0, vr=10, 50, 100 v r sh shunt resistance h=0, v=10 mv c j junction capacitance h=0, v=0, 3, 15 v r e responsivity 880-940 nm s r sensitivity @ peak range spectral application range p spectral response @ peak v br breakdown voltage table key i sc short-circuit current h=1000 lux, 2850 k tc i sc i sc temperature coefficient h=1000 lux, 2850 k i d dark current h=0, vr=100 mv tc i d id temperature coefficient h=0, vr=100 mv r sh shunt resistance h=0, vr=10 mv c j junction capacitance h=0, v=0 v, 1 mhz s r sensitivity @ 400 nm r e responsivity 400 nm, 0.18 a/w t r /t r rise/fall time @ 1 k ? load vr=1 v, 830 nm v oc open-circuit voltage h=1000 lux, 2850 k tc v oc v oc temperature coefficient h=1000 lux, 2850 k electro-optical characteristics @ 25?c electro-optical characteristics @ 25?c silicon pn photodiodes
www.optoelectronics.perkinelmer.com 15 photodiodes part i sc tc i sc v oc tc v oc i d c j t r /t f s r range p v br number ? %/?c mv mv/?c na max. pf nsec a/w nm nm v vtd31aa 150-225 0.2 350 -2 50 500 max. 0.55 400-1150 860 5 min. vtd34 70 0.2 365 -2 30 60 50 0.6 400-1100 900 40 min. vtd34f 350 -2 30 60 50 0.6 725-1150 940 40 min. vtd205 25 0.2 350 -2.6 30 . 72 20 0.6 800-1100 925 50 vtd205k 80 0.2 365 -2.6 30 72 20 0.6 400-1100 925 50 vtd206 25 0.2 350 -2.6 30 72 20 0.6 750-1100 925 50 vtd206k 80 0.2 365 -2.6 30 72 20 0.6 400-1100 925 50 silicon pn?td series technical specification table key i sc short-circuit current 940 nm, h=0.5 mw/cm 2 (vtd205, vtd206) h=5 mw/cm 2 , 2850 k (vtd31aa, vtb series) 100 lux, 2850 k (vtd34, vtd205k) 100 lux, 2856 k (vtd206k) tc i sc i sc temperature coefficient 2850 k (vtd31aa, vtd34, vtd34f, vtb series) 2856 k (vtd205, vtd205k, vtd206, vtd206k) v oc open-circuit voltage 940 nm, h=0.5 mw/cm 2 (vtd 205, vtd205k, vtd206, vtd206k) 2850 k (vtd31aa, vtd34, vtd34f) tc v oc v oc temperature coefficient 2850 k (vtd31aa, vtd34, vtd34f, vtb series) 2856 k (vtd205, vtd205k, vtd206, vtd206k) i d dark current h=0, v r =2 v ( vtb series) h=0, v r =10 v (vtd34, vtd34f, vtd205, vtd205k, vtd206, vtd206k, vtb100) h=0, v r =15 v (vtd31aa) r sh shunt resistance h=0, v=10 mv ( vtb series) tc r sh r sh temperature coefficient h=0, v=10 mv ( vtb series) c j junction capacitance h=0, v r =0 v, 1 mhz (vtd205, vtd205k, vtd206, vtd206k) @ 1 mhz, v r =0 v (vtd34, vtd34f) h=0, v=0 v (vtd31aa, vtb series) t r /t r rise/fall time @ rl=50 ? , v r =5 v, 850 nm (vtd205, vtd205k, vtd206, vtd206k) @ rl=1 k ? lead, v r =10 v, 833 nm (vtd34, vtd34f) s r sensitivity @ peak 365 nm ( vtb series) range spectral application range p spectral response @ peak v br breakdown voltage electro-optical characteristics @ 25?c part i sc tc i sc v oc tc v oc i d r sh tc r sh c j s r range p v br number ? %/?c mv mv/?c pa max. g ? %/?c nf a/w nm nm v vtb100 65 0.12 490 -2 500 1.4 -8 2 max. 0.1 320-1100 920 40 vtb1012 13 0.12 490 -2 100 0.25 -8 0.31 0.09 320-1100 920 40 vtb1012b 1.3 0.02 420 -2 100 0.25 -8 0.31 330-720 580 40 vtb1013 13 0.12 490 -2 20 7 -8 0.31 0.09 320-1100 920 40 vtb1013b 1.3 0.02 420 -2 20 7 -8 0.31 330-720 580 40 vtb1112 60 0.12 490 -2 100 0.25 -8 0.31 0.19 320-1100 920 40 vtb1112b 6 0.02 420 -2 100 0.25 -8 0.31 330-720 580 40 vtb1113 60 0.12 490 -2 20 7 -8 0.31 0.19 320-1100 920 40 vtb1113b 6 0.02 420 -2 20 7 -8 0.31 330-720 580 40 vtb4051 200 0.12 490 -2 250 0.56 -8 3 0.1 320-1100 920 40 vtb5051 130 0.12 490 -2 250 0.56 -8 3 0.1 320-1100 920 40 vtb5051b 13 0.02 420 -2 250 0.56 -8 3 330-720 580 40 vtb5051j 130 0.12 490 -2 250 0.56 -8 3 0.1 320-1100 920 40 vtb5051uv 130 0.12 490 -2 250 0.56 -8 3 0.1 200-1100 920 40 vtb5051uvj 130 0.12 490 -2 250 0.56 -8 3 0.1 200-1100 920 40 vtb6061 350 0.12 490 -2 2 0.1 -8 8 0.1 320-1100 920 40 vtb6061b 35 0.02 420 -2 2 0.1 -8 8 330-720 580 40 vtb6061cie 2 0.1 -8 8 555 vtb6061j 350 0.12 490 -2 2 0.1 -8 8 0.1 320-1100 920 40 vtb6061uv 350 0.12 490 -2 2 0.1 -8 8 0.1 200-1100 920 40 vtb6061uvj 350 0.12 490 -2 2 0.1 -8 8 0.1 200-1100 920 40 vtb8341 60 0.12 490 -2 100 1.4 -8 1 0.1 320-1100 920 40 vtb8440 45 0.12 490 -2 2000 0.07 -8 1 0.1 320-1100 920 40 vtb8440b 5 0.02 420 -2 2000 0.07 -8 1 330-720 580 40 vtb8441 45 0.12 490 -2 100 1.4 -8 1 0.1 320-1100 920 40 vtb8441b 5 0.02 420 -2 100 1.4 -8 1 330-720 580 40 vtb9412 13 0.12 490 -2 100 0.25 -8 0.31 0.09 320-1100 920 40 vtb9412b 1.3 0.02 420 -2 100 0.25 -8 0.31 330-720 580 40 vtb9413 13 0.12 490 -2 20 7 -8 0.31 0.09 320-1100 920 40 vtb9413b 1.3 0.02 420 -2 20 7 -8 0.31 330-720 580 40 silicon pn?tb series technical specification
description photocells or light-dependent resistors can provide a very economical and technically superior solution for many applications where the presence or absence of light is sensed (digital operation) or where the intensity of light needs to be measured (analog operation). semiconductor light detectors can be divided into two major categories: junction and bulk-effect devices. junction devices, when operated in the photoconductive mode, utilize the reverse characteristic of a pn junction. under reverse bias, the pn junction acts as a light-controlled current source. output is proportional to incident illumination and is relatively independent of applied voltage. silicon photodiodes are examples of this type of detector. in contrast, bulk-effect photoconductors have no junction. the bulk resistivity decreases with increasing illumination, allowing more photocurrent to flow. this resistive characteristic gives bulk-effect photoconductors a unique quality: signal current from the detector can be varied over a wide range by adjusting the applied voltage. to clearly make this distinction, perkinelmer optoelectronics refers to its bulk-effect photoconductors as photoconductive cells or, simply, photocells. photocells are thin-film devices made by depositing a layer of a photoconductive material on a ceramic substrate. metal contacts are evaporated over the surface of the photoconductor and external electrical connection is made to these contacts. t hese thin films of photoconductive material have a high sheet resistance. therefore, the space between the two contacts is made narrow and interdigitated for low cell resistance at moderate light levels. photocells features lowest-cost visible detector ? available in low-cost plastic- encapsulated packages as well as hermetic packages (to-46, to-5, to-8) ? responsive to both very low light levels (moonlight) and to very high light levels (direct sunlight) ? wide dynamic range: resistance changes of several orders of magnitude between "light" and "no light" ? low noise distortion ? maximum operating voltages of 50 to 400 volts are suitable for opera- tion on 120/240 vac ? available in center-tap dual-cell configurations as well as specially selected resistance ranges for special applications ? easy to use in dc or ac circuits ? usable with almost any visible or near-infrared light source such as leds; neon; fluorescent, incandes- cent bulbs, lasers; flame sources; sunlight; etc. ? available in a wide range of resistance values typical analog applications ? camera exposure control ? auto-focus for slide projector ?colorimetric test equipment ?densitometer ?electronic scales?ual-cell ?automated rear-view mirror typical digital applications ? automatic headlight dimmer ? night light control ? oil burner flame out ? street light control ? absence/presence (beam breaker) ?position sensor datasheets available upon request 16 www.optoelectronics.perkinelmer.com
vt series www.optoelectronics.perkinelmer.com 17 photocells resistance (ohms) sensitivity ( , typ.) response time @ 1fc part 10 lux 2850 k 2 fc 2850 k dark material log (r10/r100) max. volts ms, typ. number min. typ. max. typ. min. sec. type log (100/10) v, pk rise (1-1/e) fall (1/e) vt20n1 8 k 16 k 24 k 8 k 200 k 5 0 0.8 100 78 8 vt20n2 16 k 34 k 52 k 17 k 500 k 5 0 0.8 100 78 8 vt20n3 36 k 72 k 108 k 36 k 1 m 5 0 0.8 100 78 8 vt20n4 76 k 152 k 230 k 76 k 2 m 5 0 0.8 200 78 8 vt23n1 20 k 40 k 60 k 20 k 500 k 5 3 0.85 100 35 5 vt23n2 42 k 86 k 130 k 43 k 1 m 5 3 0.85 100 35 5 vt23n3 90 k 180 k 270 k 90 k 2 m 5 3 0.85 100 35 5 vt30n1 6 k 12 k 18 k 6 k 200 k 5 0 0.75 100 78 8 vt30n2 12 k 24 k 36 k 12 k 500 k 5 0 0.8 200 78 8 vt30n3 24 k 48 k 72 k 24 k 1 m 5 0 0.8 200 78 8 vt30n4 50 k 100 k 150 k 50 k 2 m 5 0 0.8 300 78 8 vt33n1 20 k 40 k 60 k 20 k 500 k 5 3 0.9 100 35 5 vt33n2 40 k 80 k 120 k 40 k 1 m 5 3 0.9 200 35 5 vt33n3 80 k 160 k 240 k 80 k 2 m 5 3 0.9 200 35 5 vt30ct 10 k 20 k 30 k 10 k 500 k 5 0 0.8 200 78 8 vt33ct 60 k 120 k 180 k 60 k 1 m 5 3 0.9 200 35 5 vt50n1 4 k 8 k 12 k 4 k 200 k 5 0 0.75 200 78 8 vt50n2 8 k 16 k 24 k 8 k 500 k 5 0 0.75 200 78 8 vt50n3 16 k 32 k 48 k 16 k 1 m 5 0 0.8 300 78 8 vt53n1 16 k 32 k 48 k 16 k 1 m 5 3 0.85 200 35 5 vt53n2 32 k 76 k 96 k 38 k 2 m 5 3 0.85 200 35 5 vt53n3 66 k 132 k 200 k 66 k 3 m 5 3 0.85 300 35 5 vt80n1 4 k 8 k 12 k 4 k 100 k 5 0 0.8 100 78 8 vt80n2 8 k 16 k 24 k 8 k 500 k 5 0 0.8 200 78 8 vt83n1 6 k 12 k 18 k 6 k 100 k 5 3 0.95 100 35 5 vt83n2 12 k 28 k 36 k 14 k 500 k 5 3 0.95 200 35 5 vt83n3 24 k 48 k 72 k 24k 1 m 5 3 0.95 200 35 5 vt83n4 50 k 100 k 150 k 50 k 2 m 5 3 0.95 200 35 5 vt83ct 30 k 60 k 90 k 30 k 1 m 5 3 0.90 100 35 5 vt90n1 6 k 12 k 18 k 6 k 200 k 5 0 0.8 100 78 8 vt90n2 12 k 24 k 36 k 12 k 500 k 5 0 0.8 100 78 8 vt90n3 25 k 50 k 75 k 25 k 1 m 5 0 0.85 100 78 8 vt90n4 50 k 100 k 150 k 50 k 2 m 5 0 0.9 100 78 8 vt93n1 12 k 24 k 36 k 12 k 300 k 5 3 0.9 100 35 5 vt93n2 24 k 48 k 72 k 24 k 500 k 5 3 0.9 100 35 5 vt93n3 50 k 100 k 150 k 50 k 500 k 5 3 0.9 100 35 5 vt93n4 100 k 200 k 300 k 100 k 500 k 5 3 0.9 100 35 5 vt935g-a 10 k 18.5 k 27 k 9.3 k 1 m 5 3 0.9 100 35 5 vt935g-b 20 k 29 k 38 k 15 k 1 m 5 3 0.9 100 35 5 vt935g-c 31 k 40.5 k 50 k 20 k 1 m 5 3 0.9 100 35 5 vt series technical specification specification notes photocells categorized into groups by resistance. all groups must be purchased together and perkinelmer maintains the right to determine the product mix among these groups. dimensions controlled at base of package. photocells are tested at either 1 fc or 10 lux. 2 fc. typical values shown in the tables are for reference only. cells are light-adapted at 30?0 fc. the photocell ?rid?pattern can vary from that shown. perkinelmer reserves the right to change mix grid patterns on any standard product. the resistance for any standard cell is controlled at only one light level. if the resistance at other light levels is a concern, please contact the factory.
table key r 10 resistance at e=10 lux light intensity r 100 resistance at e=100 lux light intensity r 01 dark resistance after 1 sec (e=0) r 05 dark resistance after 5 sec (e=0) 10/1oo sensitivity log (r10/r100)/ log (100 lux/10 lux) peak peak spectral sensitivity t op operating temperature t st storage temperature tc thermal coefficient t on rise time to 63% of final i (r 10 ) t off decay time to 37% of initial i (r 10 ) v max maximum operating voltage at e=0 lux p max power dissipation at 25?c ambient temperature photocells 18 www.optoelectronics.perkinelmer.com resistance ( ? ) sensitivity ( , typ.) response time @ fc part 1 fc 6500 k 2 fc 2850 k dark material log (r10/r100) max. volts ms, typ. number min. typ. max. typ. min. sec. type log (100/10) v, pk rise (1-1/e) fall (1/e) vt43n1 4 k 8 k 12 k 300 k 30 3 0.9 250 90 18 vt43n2 8 k 16 k 24 k 300 k 30 3 0.9 250 90 18 vt43n3 16 k 32 k 48 k 500 k 30 3 0.9 400 90 18 vt43n4 33 k 66 k 100 k 500 k 30 3 0.9 400 90 18 vt43 series technical specification typical electro-optical characteristics limit values part r10 range r100 typ. r 01 min. r 05 min. 10/100 peak t op range t st range tc 10 lux t on typ. t off typ. v max. p max. number k ? k ? m ? m ? typ. nm ?c ?c %/?k msec msec vmw a106009 4-11 2 0.04 0.12 0.65 600 -20-+70 -20-+80 0.4 50 40 100 90 a106011 9-20 3.5 0.06 0.18 0.65 600 -20-+70 -20-+80 0.3 60 40 150 90 a106012 16-33 5 0.18 0.5 0.7 600 -20-+70 -20-+80 0.35 50 35 150 90 a106013 27-94 8 0.5 1.5 0.8 600 -20-+70 -20-+80 0.4 35 30 150 90 a106014 77-340 15 1.5 5 0.9 600 -20-+70 -20-+80 0.5 25 20 150 90 a106031 60-130 23 0.4 1.2 0.65 600 -20-+70 -20-+80 0.3 60 40 300 90 a106032 120-210 35 1 3 0.7 600 -20-+70 -20-+80 0.35 50 35 300 90 a106033 200-580 50 3 9 0.8 600 -20-+70 -20-+80 0.4 35 30 300 90 a106034 500-1200 100 5 15 0.9 600 -20-+70 -20-+80 0.5 25 20 300 90 a105009 4-11 2 0.04 0.12 0.65 530 -20-+70 -20-+80 0.3 70 50 100 90 a105011 9-22 4 0.05 0.15 0.6 530 -20-+70 -20-+80 0.2 70 50 150 90 a105012 18-44 7 0.15 0.45 0.65 530 -20-+70 -20-+80 0.2 60 40 150 90 a105013 36-88 12 0.4 1.2 0.7 530 -20-+70 -20-+80 0.3 50 30 150 90 a105014 70-200 20 1 3 0.75 530 -20-+70 -20-+80 0.3 40 30 150 90 a10 series technical specification typical electro-optical characteristics limit values part r10 range r100 typ. r 01 min. r 05 min. 10/100 peak t op range t st range tc 10 lux t on typ. t off typ. v max. p max. number k ? k ? m ? m ? typ. nm ?c ?c %/?k msec msec vmw a906009 4-11 2 0.04 0.12 0.65 600 -20-+70 -20-+80 0.4 50 40 100 90 a906011 9-20 3.5 0.06 0.18 0.65 600 -20-+70 -20-+80 0.3 60 40 150 90 a906012 16-33 5 0.18 0.5 0.7 600 -20-+70 -20-+80 0.35 50 35 150 90 a906013 27-94 8 0.5 1.5 0.8 600 -20-+70 -20-+80 0.4 35 30 150 90 a906014 77-340 15 1.5 5 0.9 600 -20-+70 -20-+80 0.5 25 20 150 90 a906031 60-130 23 0.4 1.2 0.65 600 -20-+70 -20-+80 0.3 60 40 300 90 a906032 120-210 35 1 3 0.7 600 -20-+70 -20-+80 0.35 50 35 300 90 a906033 200-580 50 3 9 0.8 600 -20-+70 -20-+80 0.4 35 30 300 90 a906034 500-1200 100 5 15 0.9 600 -20-+70 -20-+80 0.5 25 20 300 90 a905012 18-44 7 0.15 0.45 0.65 530 -20-+70 -20-+80 0.2 60 40 150 90 a905013 36-88 12 0.4 1.2 0.7 530 -20-+70 -20-+80 0.3 50 30 150 90 a905014 70-200 20 1 3 0.75 530 -20-+70 -20-+80 0.3 40 30 150 90 a995009 4-11 2 0.04 0.12 0.65 530 -20-+70 -20-+80 0.3 70 50 100 90 a995011 9-22 4 0.05 0.15 0.6 530 -20-+70 -20-+80 0.2 70 50 150 90 a995012 18-44 7 0.15 0.45 0.65 530 -20-+70 -20-+80 0.2 60 40 150 90 a995013 36-88 12 0.4 1.2 0.7 530 -20-+70 -20-+80 0.3 50 30 150 90 a995014 70-200 20 1 3 0.75 530 -20-+70 -20-+80 0.3 40 30 150 90 a90 series technical specification all readings taken at standard light a (2854 k color temperature) after 2 hours of preillumination at 500 lux all readings taken at standard light a (2854 k color temperature) after 2 hours of preillumination at 500 lux a10 series b90 series
www.optoelectronics.perkinelmer.com 19 photocells typical electro-optical characteristics limit values part r10 r100 typ. r 01 min. r 05 min. 10/10 peak t op range t st range tc 10 lux t on typ. t off typ. v max p max number k ? k ? m ? m ? min. nm ?c ?c %/?k msec msec vmw u116012 20-50 8 0.12 0.36 0.7 550 -20-+70 -20-+80 0.3 50 40 150 50 u116013 35-220 15 0.4 1.2 0.85 550 -20-+70 -20-+80 0.35 40 30 150 50 u116014 150-1000 35 1 3 0.95 550 -20-+70 -20-+80 0.4 30 25 150 50 u116032 100-320 40 1 3 0.7 550 -20-+70 -20-+80 0.3 40 30 400 50 u116033 250-1100 75 2 6 0.85 550 -20-+70 -20-+80 0.35 30 25 400 50 u series technical specification all readings taken at standard light a (2854 k color temperature) after 2 hours of preillumination at 500 lux typical electro-optical characteristics limit values part r10 range r100 typ. r 01 min. r 05 min. 10/100 peak t op range t st range tc 10 lux t on typ. t off typ. v max. p max. number k ? k ? m ? m ? typ. nm ?c ?c %/?k msec msec vmw b906023 4-15 1.6 0.1 0.3 0.8 600 -20-+70 -20-+80 0.4 35 30 300 200 b906032 5-13 2 0.1 0.3 0.7 600 -20-+70 -20-+80 0.3 50 35 300 200 b906033 11-40 5 0.2 0.6 0.8 600 -20-+70 -20-+80 0.4 35 25 300 200 b series technical specification all readings taken at standard light a (2854 k color temperature) after 2 hours of preillumination at 500 lux typical electro-optical characteristics limit values part r10 range r100 typ. r 01 min. r 05 min. 10/100 peak t op range t st range tc 10 lux t on typ. t off typ. v max. p max. number k ? k ? m ? m ? typ. nm ?c ?c %/?k msec msec vmw m996011a 1.5-5 0.7 0.05 0.15 0.7 600 -20-+70 -20-+80 0.3 50 30 100 200 m996011b 0.8-2 0.4 0.05 0.15 0.65 600 -20-+70 -20-+80 0.3 40 30 100 200 m series technical specification all readings taken at standard light a (2854 k color temperature) after 2 hours of preillumination at 500 lux typical electro-optical characteristics limit values part r10 range r100 typ. r 01 min. r 05 min. 10/100 peak t op range t st range tc 10 lux t on typ. t off typ. v max. p max. number k ? k ? m ? m ? typ. nm ?c ?c %/?k msec msec vmw d996011 1.5-3 0.6 0.01 0.03 0.6 600 -20-+70 -20-+80 0.3 60 35 150 200 d996012 2.8-6 0.8 0.03 0.09 0.7 600 -20-+70 -20-+80 0.35 50 30 150 200 d996013 4.5-13 1.5 0.1 0.3 0.8 600 -20-+70 -20-+80 0.4 35 25 150 200 d996021 4-9 1.8 0.03 0.09 0.6 600 -20-+70 -20-+80 0.3 60 35 150 200 d996022 8-15 2.5 0.09 0.27 0.7 600 -20-+70 -20-+80 0.35 50 30 150 200 d996023 12-35 4 0.5 1.5 0.8 600 -20-+70 -20-+80 0.4 35 25 150 200 d series technical specification all readings taken at standard light a (2854 k color temperature) after 2 hours of preillumination at 500 lux m series d series u series
description perkinelmer optoelectronics offers a range of selective sensors for ultraviolet radiation. this sensor series can be equipped with an integrated amplifier and is perfectly suited for the detection of any radiation ranging from 200 nm to 400 nm. high sensitivity, hermetic encapsulation, small dimension (to-5) and low cost structure provide suitability for both industrial and consumer applications. uv detector basics uv detectors from perkinelmer optoelectronics are based on silicon-carbide, a material that offers new performance features at reasonable cost. silicon-carbide provides a unique sensitivity in the spectral range from 200 to 400 nm (peak at 280 nm). standard uv detectors perkinelmer optoelectronics?range of standard ultraviolet detectors comprises different housings and window options. detectors of this ??type contain the uv-sensitive photodiode only, and the signal output represents an intensity-dependent photodiode current. as a default, the standard window (>210 nm) will be applied. other windows with more selective wavelengths are a1, a2, a0, c1. standard uv detectors with built-in lens products can be supplied with a standard window or built-in lens. amplified output types sensors of this ??type consist of an additional transimpedance amplifier of certain amplification, and the sensor output repre- sents an intensity-dependent voltage. e?x?corresponds to the power of ten of the amplification factor ranging between 10 7 (e07) and 10 10 (e10). optional versions are available on request only. different housings and window options are available. as a default, the standard window will be applied. other windows with more selective wavelengths are a1, a2, a0, c1. amplified output types with built-in lens products can be supplied with a standard window or built-in lens. ultraviolet detectors features ?high sensitivity ? low temperature dependence ? available in to-5, to-18 and miniature housing ? various selective filter window options ?radiation resistant types ? built-in lens types ? built-in amplifier types ? long-term stability at high radiation intensity high temperature resistivity typical applications ?solar measurement ?sterilization ?burner controls ?industrial controls datasheets available upon request 20 www.optoelectronics.perkinelmer.com
general data max. operating temperature: -20 to +80?c max. storage temperature: -20 to +80?c spectral response: 210-380 nm test conditions: t = 25?c l types are with lens built in * radiation resistant version radiant sensitivity: standard window responsivity: standard window sensitive area: active diode area for types without lens selectivity: 400-2000 nm rise time: t (63%) www.optoelectronics.perkinelmer.com 21 ultraviolet detectors radiant pk. response sensitive junction temperature part sensitivity wavelength area dark current capacitance coefficient number housing ma/w nm mm 2 selectivity fa pf %/k uv10sf to-5 140 280 5.4x10 -2 >10 -5 0.2 21 -0.5 uv10sl to-5 25 280 12.5 >10 -5 0.2 21 -0.5 uv20sf to-18 140 280 5.4x10 -2 <10 -5 0.2 21 -0.5 uv21sf* to-18 140 280 5.4x10 -2 >10 -5 0.2 21 -0.5 uv30sfa2 mini 110 310 5.4x10 -2 >10 -5 0.2 21 -0.5 standard uv detectors technical specification radiant sensitive operating dark offset rise temperature part sensitivity responsivity area voltage voltage time coefficient number housing v/nw v/mw/mm 2 mm 2 selectivity v mv ms %/k uv10t2e10f to-5 4 0.25 5.4x10 -2 >10 -5 2.5-5 <5 10 <-0.3 uv10t2e10l to-5 1 10 12.5 >10 -5 2.5-5 <5 10 <-0.3 amplified output detectors technical specification test conditions: t = 25?c l types are with lens built in 2e10 is the built-in amplification. other options on request radiant sensitivity: standard window responsivity: standard window sensitive area: active diode area for types without lens selectivity: 400-2000 nm rise time: t (63%) to-5 types ultraviolet detectors
description thermopile detectors directly sense thermal radiation, providing the perfect device for remotely measuring temperatures without the need for any mechanical chopper. perkinelmer's proprietary and innovative si-based micromachining technology guarantees a new generation of components: extreme long-term stability, very low temperature coefficient in sensitivity, and excellent repeatability of electro-optical parameters. thermopile sensors allow remote temperature sensing at a low system cost. the sensor does not require cooling, and can reach an accuracy of ??, dependent on the measurement range. for narrow temperature ranges, as in body temperature measure- ment, a precision of 0.1? is possible. single-element thermopile detectors: tps series the different available chip sizes and packaging types, together with the variety in window openings with and without a silicon lens, enable the adaptation of the perkinelmer thermopiles to virtually every application where a remote temperature measurement or control is needed. dual- and quad-element types: tps 2 , tps 4 series perkinelmer offers thermopile detectors with two or four channels, each of which can be equipped with one of the many available infrared spectral bandpass filters. the main application of multiple channel thermopiles is gas detection through ir absorption. prominent gases to be detected are co 2 , hydrocarbons and co. thermopile modules: tpm series for convenient use, perkinelmer offers a module with a single- element thermopile sensor, on-board or with an integrated electronic circuit, for the necessary amplification and ambient temperature compensation. this thermopile module is offered as a fully calibrated, ready-to-go sensor. various temperature ranges and optics are available. most modules are customized versions. thermopile line and matrix arrays: tpl, tpa series the latest perkinelmer thermopile technology development features more than a single test spot. the new tpa- (matrix array) and tpl- (line array) series offer multi-element thermopile arrays combined with an optical lens, amplifier, and interface electronics (multiplexer, ambient temperature sensor) in a compact to-39- type housing. this combines solid-state, non-choppered temperature measurement without the need for in-field calibration. typically, the array sensors are sold as a modular type, i.e. on a pcb with external data memory. these tpa- and tpl-modules are precalibrated with the data stored in an eeprom. in an application, the associated micro controller (?) reads this calibration information and converts the sensor signals to the object temperatures. thermopile detectors features available in to-39 and to-18 housings single, dual or quad elements 8 element line arrays and 4x4 matrix arrays with various lens optics and integrated asic with multiplexer various filters for optical broad- band or narrow-band applications excellent repeatability of electro- optical parameters ambient temperature reference (thermistor) included high sensitivity of several 10 v/w; dc radiation sensitive extremely low temperature coefficient of sensitivity and resistivity constant response over the infrared spectrum the absence of microphonic noise effects low susceptibility to electromagnetic pulses (emp) due to the low internal resistance (<100 k ? ) rugged construction based on cmos silicon micromachining technology typical applications remote temperature sensing, hand-held or industrial pyrometers ear or body thermometers temperature-sensor modules in microwave ovens, hair dryers, cookers, toasters sensor modules for control of air condition systems (heat management, home, automotive) temperature control in copiers and printers sensor arrays for spatial temperature measurements (imaging applications) sensors with infrared bandpass filters for gas detection by infrared absorption datasheets available upon request 22 www.optoelectronics.perkinelmer.com
dual and quad element thermopile detectors general data tc of sensitivity (absolute value): 0.02%/k tc of resistance (absolute value): 0.02%/k max. operating temperature: -20 to 100? max. storage temperature: -40 to 100? thermistor beta: 3964 k option for all types: 8-14 um pyrometry filter: g9 www.optoelectronics.perkinelmer.com 23 thermopile detectors dc time active tp chip thermistor part field of sensitivity constant area resistance noise nep d* (25?c) number housing view v/w ms mm 2 k ? n v/ hz nw/ hz cm hz/w k ? tps333 to-18 100? 35 25 0.7x0.7 75 35 1 0.7x10 8 100 tps334 to-39 60? 35 25 0.7x0.7 75 35 1 0.7x10 8 30 tps334l5.5 to-39** 7? 55 25 0.7x0.7 75 35 0.6 1.1x10 8 30 tps434 to-39 55? 35 20 0.5x0.5 35 24 0.7 0.7x10 8 30 tps434ira to-39*** 15? 55 20 0.5x0.5 35 24 0.4 1.1x10 8 30 tps534 to-39 80? 20 35 1.2x1.2 50 29 1.4 0.8x10 8 30 tps535 to-39 80? 20 35 1.2x1.2 50 29 1.4 0.8x10 8 30 single element thermopile detectors technical specification dc time active tp chip thermistor part field of sensitivity constant area resistance noise nep d* (25?c) number housing view v/w ms mm 2 k ? n v/ hz nw/ hz cm hz/w k ? tps2534 to-39** 2x90? 42 35 1.2x.1.2 50 29 0.7 1.8x10 8 30 tps4339 to-39*** 4x60? 75 25 0.7x0.7 75 35 0.5 1.5x10 8 100 dual and quad thermopile detectors technical specification test conditions: t = 25?c field of view: at 50% intensity points noise: r.m.s., 300 k * 500 k black body ** with 5.5 mm lens *** with int. reflector test conditions: t = 25?c field of view: at 50% intensity points noise: r.m.s., 300 k above data are referenced without the bp filter. option for all types: individual bp filters for each channel * 500 k black body ** with 2 channels *** with 4 channels output voltage noise part number field of v (80?c object, object mv/ hz number housing of pixels view optics 20?c ambient) temperature (.5?0hz) tplm086l5.5 to-39 on pcb 8 element line 41?x6? f/1 optics, f=5.5 mm 0.95 -20-100?c 0.4 tplm086l3.9 to-39 on pcb 8 element line 56?x8? f/1 optics, f=3.9 mm 0.95 -20-100?c 0.4 tpam166l3.9 to-39 on pcb 4x4 matrix 41?x32? f/1 optics, f=3.9 mm 0.95 -20-100?c 0.4 line and matrix arrays technical specification part number physical size optics field of view tpm 33x17x5 aperture 100? tpml/tpmf 33x17x15 mirror 7? tpmml5.5 20x17x8 5.5 mm lens 7? modules technical specification test conditions: t = 25?c operating voltage: 5 v operating current: 1 ma zero signal offset: v dd /2 output resistance: 200 ? power up time: 0.3 s sample frequency: 3 khz max. operating temperature: -20-100? max. storage temperature: -40-100? temperature reference slope: 10 mv/k temperature reference offset: 0 mv for further details please contact us. thermopile arrays thermopile modules
description pyroelectric materials produce a charge transfer when they undergo a change in thermal energy. this effect is applied for detectors that show an output signal similar to alternating current with a change in the infrared radiation. such pyroelectric detectors are used in movement detectors, passive infrared alarms, and automatic light switches. detectors based on the same principle are used for gas monitoring based on the spectral absorption method. dual-element types dual-element detectors combine two elements which are connected in reverse polarity to each other to one fet source- follower output. four-element types four-element detectors combine four elements to two outputs. the two individual channels allow signal processing to avoid false alarms and provide redundancy. ceiling-mount detectors ceiling-mount detectors have a special element configuration suitable for ceiling lens designs. they combine two or four separate elements into one output. single-element detectors this range of detector offers one element with source-follower output. different element sizes are available. most of the preferred types have built-in thermal compensation. special ir windows of narrow bandwidth are offered. dual-channel detectors these special designs offer two single-element detectors in one to-5 case. each one is equipped with an individual filter and provides its own output. various narrow-band filter windows can be chosen. pyroelectric infrared detectors features low noise, high responsivity excellent common-mode balance for dual-element types available in to-39, to-5 housings various filter windows for broad- band or narrow-band applications single- and dual-channel devices dual- and quad-type elements for intrusion applications thermally compensated versions for single-element types typical applications intrusion alarms motion detection ceiling-mount person detection gas analysis non-contact infrared measurements datasheets available upon request 24 www.optoelectronics.perkinelmer.com
general data max. operating temperature: -40 to +85? max. storage temperature: -40 to +85? operating voltage: 2-12 v/47 k ? load resistor offset voltage: 0.2-1.5 v/47 k ? load resistor www.optoelectronics.perkinelmer.com 25 pyroelectric infrared detectors part responsivity noise nep d* field of view element size number housing v/w typ. (1 hz) ?pp typ. w hz typ. cm h z/w typ. horizontal vertical mm 2 lhi954 to-39 3700 20 8.1x10 -10 1.75x10 7 110? 110? 2x1/2x1 lhi958 to-5 3700 20 8.1x10 -10 1.75x10 7 110? 110? 2x1/2x1 lhi968 to-5 4000 20 7.5x10 -10 1.9x10 7 100? 100? 2x1/2x1 lhi874 to-39 4200 20 7.5x10 -10 1.9x10 7 90? 95? 2x1/2x1 lhi878 to-5 4200 20 7.5x10 -10 1.9x10 7 90? 95? 2x1/2x1 dual-element detectors technical specification part responsivity noise nep d* field of view element size number housing v/w typ. (1 hz) ?pp typ. w hz typ. cm h z/w typ. horizontal vertical mm 2 lhi1148 to-5 4500 30 8.6x10 -10 14x10 7 108? 67? 0.8x1.2 ea. lhi1448 to-5 6500 30 8.6x10 -10 14x10 7 108? 67? 0.9532 ea. lhi1548 to-5 5000 30 8.6x10 -10 14x10 7 108? 67? 0.9532 ea. four-element detectors technical specification part responsivity noise nep d* field of view element size number housing v/w typ. (1 hz) ?pp typ. w hz typ. cm h z/w typ. x y mm 2 lhi906 to-5 4000 20 7.5x10 -10 719x10 7 150? 150? 2.66 ea. (round) lhi1128 to-5 8000 40 7.5x10 -10 28x10 7 156? 144? 1.0x1.0 (4 elements) ceiling-mount application detectors technical specification part responsivity noise nep d* field of view element size number housing v/w typ. (10 hz) nv rms(10hz) w hz typ. cm h z/w typ. x y mm 2 lhi807 to-5 640 600 9.4x10 -10 16x10 7 135? 120? 1.5x1.5 lhi807tc to-5 320 300 9.4x10 -10 16x10 7 135? 120? 1.5x1.5 pys4198 to-5 300 150 20x10 -10 8x10 7 130? 110? 2.0x2.0 pys4198tc to-5 150 75 20x10 -10 8x10 7 130? 110? 2.0x2.0 pys3151tc to-18 640 600 9.4x10 -10 16x10 7 90? 90? 1.5x1.5 single-element detectors technical specification part responsivity noise nep d? field of view element size number housing v/w typ. (10 hz) nv rms(10 hz) w hz typ. cm h z/w typ. x (ea.) y (ea.) mm 2 lhi814g1/g20 to-5 640 600 9.4x10 -10 16x10 7 77? 95? 1.5x1.5 (ea.) lhi814g2/g20 to-5 640 600 9.4x10 -10 16x10 7 77? 95? 1.5x1.5 (ea.) dual-channel detectors technical specification test conditions: t = 22?c responsivity: 100? black body noise: 0.4 to 10 hz bandwidth nep:100? black body, 1 hz electr. bandwidth, 1 hz d*: 100? black body, 1 hz electr. bandwidth, 1 hz each of these types can be equipped with two different narrow band infrared filters. test conditions: t = 22?c responsivity: 100? black body noise: 0.4 to 10 hz bandwidth nep:100? black body, 1 hz electr. bandwidth, 1 hz d*: 100? black body, 1 hz electr. bandwidth, 1 hz test conditions: t = 22?c responsivity: 100? black body noise: 0.4 to 10 hz bandwidth nep:100? black body, 1 hz electr. bandwidth, 1 hz d*: 100? black body, 1 hz electr. bandwidth, 1 hz test conditions: t = 22?c responsivity: 100? black body noise: 0.4 to 10 hz bandwidth nep:100? black body, 1 hz electr. bandwidth, 1 hz d*: 100? black body, 1 hz electr. bandwidth, 1 hz test conditions: t = 22?c responsivity: 100? black body noise: 0.4 to 10 hz bandwidth nep:100? black body, 1 hz electr. bandwidth, 1 hz d*: 100? black body, 1 hz electr. bandwidth, 1 hz ceiling mount series dual channel series pyroelectric infrared detectors
description perkinelmer optoelectronics has been a leading manufacturer of analog optical isolators (aoi) for over twenty years and makes a broad range of standard parts under its trademark vactrol . there are many kinds of optical isolators, but the most common is the led/phototransistor type. other familiar types use output elements such as light-sensitive scrs, triacs, fets and ics. the major application for these silicon-based devices is to provide electrical isolation of digital lines connected between different pieces of equipment. the principle of operation is very simple. when an input current is applied to the led, the output photo- transistor turns on. the only connection between the led and phototransistor is through light?ot electricity?hus the term optical isolator. these optical isolators are primarily digital in nature with fast response times for interfacing with logic gates. rise and fall times of a few microseconds, faster for some isolators, are typical. the aoi also uses an optical link between input and output. the input element is an led and the output element is always a photoconductive cell or, simply a photocell. together, the coupled pair act as an electrically variable potentiometer. since the output element of the aoi is a resistor, the voltage applied to this output resistor may be dc and/or ac and the magnitude may be as low as zero or as high as the maximum voltage rating. because the input will control the magnitude of a complex waveform in a proportional manner, this type of isolator is an analog-control element. aois may be used in the on-off mode but the fastest response time is only in the millisecond range. a level-sensitive schmitt trigger is required between the aoi and logic gates when used in digital circuits. analog optical isolators features high input-to-output voltage isolation true resistance element output single- or dual-element outputs available low cost suitable for ac or dc use wide range of input-to-output characteristics low drive current low ?n?resistance, high ?ff resistance complete solid-state construction typical applications ?dc isolators ? feedback elements in automatic gain control circuits ? audio limiting and compression ?noiseless switching ?logic interfacing ? remote gain control for amplifiers ?photochoppers ?noiseless potentiometers principle of operation analog optical isolators are used in many different types of circuits and applications. available related products vtl5c series lt3011 series lt9900 series datasheets available upon request 26 www.optoelectronics.perkinelmer.com absolute maximum ratings @ 25 maximum temperatures storage and operating: ?0? to 75? cell power: 175 mw derate above 30?: 3.9 mw/? led current: 40 ma derate above 30?: 0.9 ma/? led reverse breakdown voltage: 3.0 v led forward voltage drop @ 20 ma: 2.0 v (1.65 v typ.) vtl5c8 = 2.8 v (2.2 v typ.) vtl5c9 = 2.8 v (2.2 v typ.) vtl5c10 = 2.8 v (2.2 v typ.) minimum isolation voltage @ 70% rel. humidity: 2500 vrms output cell capacitance: 5.0 pf input/output coupling capacitance: 0.5 pf
analog optical isolators vtl5c series perkinelmer optoelectronics?line of aois consists of a light-tight package which houses a light source and one or more photoconductive cells. through control of the input current or voltage applied to the aoi, the output resistance can be varied. the output resistance can be made to switch between an ?n?and ?ff?state or made to track the input signal in an analog manner. because a small change in input signal can cause a large change in output resistance, aois have been found to provide a very eco- nomical and technically superior solu- tion for many applications. www.optoelectronics.perkinelmer.com 27 optical isolators on resistance off resistance response time part material input dark @ 10 sec. dynamic cell turn-on to 63% turn-off (decay) number type current adapted typ. min. slope range voltage final r on typ. to 100 ? max. 1 ma 20 k ? vtl5c1 1 10 ma 600 ? 50 m ? 15 100 db 100 v 2.5 ms 35 ms 40 ma 200 ? 1 ma 5.5 k ? vtl5c2 0 10 ma 800 ? 1 m ? 24 69 db 200 v 3.5 ms 500 ms 40 ma 200 ? 5 ma 2.5 k ? vtl5c2/2 0 40 ma 700 ? 1 m ? 20 65 db 50 v 7 ms 150 ms 1 ma 30 k ? vtl5c3 3 10 ma 5 ? 10 m ? 20 75 db 250 v 2.5 ms 35 ms 40 ma 1.5 ? 1 ma 55 k ? vtl5c3/2 3 40 ma 2 k ? 10 m ? 19 71 db 100 v 3 ms 50 ms 1 ma 1.2 k ? vtl5c4 4 10 ma 125 ? 400 k ? 18.7 72 db 50 v 6 ms 1.5 sec 40 ma 75 ? 1 ma 1.5 k ? vtl5c4/2 4 10 ma 150 ? 400 k ? 8.3 68 db 30 v 6 ms 1.5 sec 1 ma 75 k ? vtl5c6 0 10 ma 10 k ? 100 m ? 16.7 88 db 250 v 3.5 ms 50 ms (1 m ? ) 40 ma 2 k ? 0.4 ma 5 k ? vtl5c7 7 2 ma 1.1 k ? 1 m ? 5.7 75 db 50 v 6 ms 1 sec. (100 k ? ) 1 ma 4.8 k ? vtl5c8 0 4 ma 1.8 k ? 10 m ? 8 80 db 500 v 4 ms 60 ms 16 ma 1 k ? vtl5c9 1 2 ma 630 ? 50 m ? 7.3 112 db 100 v 4 ms 50 ms vtl5c10 4 1 ma 400 ? 400 k ? 3.8 75 db 50 v 1 ms 1.5 sec vtl5c series technical specification specification notes led current: since the input has a substantially constant voltage drop, a current-limiting resistance is required. on resistance: dark adapted resistance measured after 24 or more hours of no input. off resistance: measured 10 sec. after removal of the input. the ultimate resistance is many times greater than the value at 10 sec. response time: ascent measured to 63% of final conductance from the application of 40 ma input. the conductance rise time to a specified value is increased at reduced input drive while the conductance decay time to a specified value is decreased. typical matching and tracking from 0.4 to 40 ma is 25%. measured 5 sec. after removal of the input. the ultimate resistance is many times greater than the value at 5 sec. vtl5c9 response times are based on a 2 ma input. vtl5c10 response times are based on a 10 ma input for ascent time and a 1 ma input for decay time. lt series key r1ma output resistance at if=1 ma r20ma output resistance at if=20 ma r 01 dark resistance after 1 sec (if=0) r 05 dark resistance after 5 sec (if=0) t op operating temperature range t st storage temperature range v i input/output insulation voltage tc module thermal coefficient t on rise time to 63% of final r 20 t off decay time to 37% of initial r 20 c s output capacity v max operating voltage at if=0 p max output power d issipation at 25?c typical electro-optical characteristics limit values part r1ma r20ma typ. r 01 min. r 05 min. t op range t st range v i min. tc 10 lux t on t off typ. c s max. v max p max number k ? k ? m ? m ? ?c ?c v %/?k msec msec pf v mw lt3011-2 1 3 9 -20-+60 -20-+80 2500 2 10 10 2 50 50 lt3011 0.32 0.1 0.3 -20-+70 -20-+70 2500 0.4 50 40 2 100 75 lt9909 0.7-1.2 0.35 0.06 0.18 -20-+70 -20-+70 1000 0.4 40 40 1 50 50 lt9910 1.2-2.5 0.7 0.06 0.18 -20-+70 -20-+70 1000 0.4 40 40 1 50 50 lt9911 2-5 1.5 0.1 0.3 -20-+70 -20-+70 1000 0.4 50 40 1 100 50 lt9912 4.5-9 2 0.2 0.6 -20-+70 -20-+70 1000 0.4 40 30 1 100 50 lt9913 8-16 3.5 0.5 1.5 -20-+70 -20-+70 1000 0.4 35 30 1 100 50 lt9914 14-25 6 0.7 2.1 -20-+70 -20-+70 1000 0.4 35 30 1 100 50 lt series technical specification all readings taken at standard light a (2854 k color temperature) after 2 hours of preillumination at 500 lux. input/output coupling capacity : 1 pf max. reverse voltage : 4 v max. diode forward current : 25 ma max. dc lt series
(@ 25? unless otherwise noted) absolute maximum ratings maximum temperatures storage and operating: -40? to 85? lead-soldering temperature: 260? (1.6 mm from case, 5 sec. max.) description perkinelmer optoelectronics?infrared interruptive switches are ideal for non-contact sensing applications. the emitter is generally an ir led and the detector is either a phototransistor or a photodar- lington. optoswitches, optical hybrids, and custom optical assemblies optoswitches, optical hybrids, custom assemblies, photodiodes, phototransistors, ir emitters, and photoconductive cells are commonly used in industrial, commercial, and consumer electronics applications. this product line is one of the broadest in the industry and includes a variety of standard catalog products as well as custom design and manufacturing capabilities. approximately 75% of the products shipped are custom designed and tested to serve the needs of specific oem applications. reflective optoswitches reflective optical switches combine an infrared-emitting diode (ired) with an npn phototransistor or photodarlington in a one- piece, sealed, ir-transmitting plastic case. sealed construction improves resistance to moisture and debris. units are available with pc-board mounting leads (vtr16d1), or 12-inch, #26 awg flying leads (vtr17d1). transmissive optoswitches interrupter-type optical switches combine an infrared-emitting diode (ired) with an npn phototransistor. units are available in two different case styles; a one-piece, sealed, ir-transmitting plastic case (vtl11 and vtl13 series) and an opaque case (vtl23 series). options also include apertures-over-detector and/or emitter, and either pc-board mount leads or 12-inch, #26 awg leads (vtl13 only). infrared interruptive switches features contains no mechanical parts to wear out provides non-contact sensing of objects low power consumption, compatible with solid-state electronics low cost capable of sensing any opaque object small size custom mechanical configurations available can be specially selected or built to meet the requirements of your particular application typical applications ? printers and typewriters paper sensor paper-feed detector imprinting head position detector ? floppy disk drives track-zero sensor index sensor disk-in sensor ?vending machines coin sensor detection of goods mechanism position ?facsimiles original width detection initial position detection final position detection ?industrial rotational speed/position detection (encoder) distance detection object sensor ? vhs/vhsc/8 mm vcr tape start tape load tape end ?copiers paper-presence detection toner-density control paper-carrier detection datasheets available upon request 28 www.optoelectronics.perkinelmer.com general characteristics parameter symbol conditions input ired output detector reverse voltage v r i r =100 ? 2 v min. continuous forward i f derate 0.73 ma/? 40 ma max. current above 30? forward voltage drop v f i f =20 ma 1.8 v max. collector breakdown v br(ceo) i c =100 ? 30 v min. voltage emitter breakdown v br(eco) i c =100 ? 5 v min. voltage i e =100 ? (vtr) 3 v min. (vtl23dxa) power dissipation p d derate 0.91 mw/? 50 mw max. above 30?
www.optoelectronics.perkinelmer.com 29 infrared interruptive switches light current, i p dark current part test conditions test conditions output element number ma min. i f ma v ce volts d inches (mm) ? max. i f ma v ce volts detector device vtr16d1 0.3 20 5 0.1 (2.5) 0.1 0 5 phototransistor vtr17d1 0.3 20 5 0.1 (2.5) 0.1 0 5 phototransistor vtr24f1 6.0 20 30 2.0 (50.8) ???photodarlington vtr series technical specification light current, i p dark current saturation volts part test cond. test cond. test cond. aperture combination number ma min. i f ma v ce volts na max. i f ma v ce volts volts max. i f ma i c ma emitter detector d1 0.5 20 5 100 0 10 0.4 20 0.25 none none d1-20 0.15 20 5 100 0 10 0.4 20 0.25 0.02" w none d3 2 20 5 100 0 10 0.4 20 1.8 none none d3-20 0.6 20 5 100 0 10 0.4 20 1.8 0.02" w none d5-20 0.15 20 5 100 0 10 0.4 20 0.25 0.02" w 0.01" w d6-20 0.075 20 5 100 0 10 0.4 20 0.25 0.02" w 0.005" w d7 0.75 20 5 100 0 10 0.4 20 0.25 none 0.02" w d7-20 0.225 20 5 100 0 10 0.4 20 0.25 0.02" w 0.02" w vtl11d, 13d series technical specification specification notes the case material is polysulfone and should be cleaned with alcohol or freon tf only. avoid chlorinated hydrocarbons and solvents such as acetone or toluene, as damage may result. the light current is measured using a 90% reflective surface at a specified distance. the dark current is measured with the part totally shielded from ambient light. with 2150 lux (200 fc) from a cool white fluorescent lamp perpendicular to the sensing axis, the detector current will be typically 3 ?. the same illumination concentric to the sensing axis will result in a detector current of 50 ?. equivalent light from an incandescent lamp will result in significantly greater currents. with the specified ired forward current and no reflecting surface, the crosstalk is typically less than 3 ?. accommodates most applications. specification notes the dark current is measured with the part totally shielded from ambient light. with 2150 lux (200 fc) from a cool white fluorescent lamp perpendicular to the sensing axis, the detector current will be typically 3 ?. equivalent light from an incandescent lamp will result in significantly greater currents. the aperture used for these slotted switches are 0.04" (1.02 mm) high. the case material is polysulfone and should be cleaned with alcohol or freon tf only. avoid chlorinated hydrocarbons and solvents such as acetone or toluene, as damage may result. vtl11d7-20, vtl13d7-20, accommodate most applications. the other parts in this series are available only for specialized, high-volume applications specification notes the dark current is measured with the part totally shielded from ambient light. vtl23d2a00 and vtl23d3a00 contains a visible light- blocking dust cover over the apertures. the plastic case can be damaged by chlorinated hydrocarbons and ketones. methanol isopropanol alcohols are recommended as cleaning agents. vtl23d1a22 accommodate most applications. the other parts in this series are available only for specialized, high- volume applications. aperture length is 0.075" light current, i p dark current saturation volts part test cond. test cond. test cond. aperture combination number ma min. i f ma v ce volts na max. i f ma v ce volts volts max. i f ma i c ma emitter detector vtl23d0a21 0.2 20 10 100 0 10 0.4 20 0.1 0.02" w 0.01" w vtl23d0a22 0.2 20 10 100 0 10 0.4 20 0.1 0.02" w 0.02" w vtl23d1a00 0.5 20 10 100 0 10 0.4 20 0.4 0.04" w 0.04" w vtl23d1a22 0.5 20 10 100 0 10 0.4 20 0.4 0.02" w 0.02" w vtl23d2a00 2.5 20 10 100 0 10 0.6 20 1.8 0.04" w 0.04" w vtl23d3a00 1.0 10 10 100 0 10 0.4 10 0.8 0.04" w 0.04" w vtl23dxa series technical specification infrared interruptive switches reflective optoswitches vtr series transmissive optoswitches vtl11d series, vtl13d series, vtl23dxa series
description phototransistors are photodiode-amplifier combinations integrated within a single silicon chip. these are combined to overcome the major fault of photodiodes: unity gain. many applications demand a greater output signal from the photodetector than can be generated by a photodiode alone. while the signal from a photodiode can always be amplified through use of an external op-amp or other circuitry, this approach is often not as practical or as cost-effective as the use of phototransistors. the phototransistor can be viewed as a photodiode whose output photocurrent is fed into the base of a conventional small-signal transistor. while not required for operation of the device as a photodetector, a base connection is often provided, allowing the designer the option of using base current to bias the transistor. the typical gain of a phototransistor can range from 100 to over 1500. phototransistors can be used as ambient-light detectors. when used with a controllable light source, typically an ired, they are often employed as the detector element for optoisolators and transmissive or reflective optical switches. phototransistors features ? low-cost visible and near-ir photodetection ? available with gains from 100 to over 1500 ? moderately fast response times ? available in a wide range of packages including epoxy-coated, transfer-molded, cast, hermetic packages, and in chip form ? usable with almost any visible or near-infrared light source such as ireds; neon, fluorescent, incandescent bulbs; lasers; flame sources; sunlight; etc. ? same general electrical characteristics as familiar signal transistors typical applications ?computer/business equipment ?write-protect control ?margin controls?rinters ?industrial ? led light source?ight pens ?security systems ?safety shields ?consumer ?coin counters ? lottery card readers ?position sensors?oysticks ?remote controllers?oys, appliances, audio/visual equipment ?games?aser tag ? camera shutter control principle of operation phototransistors are solid-state light detectors that possess internal gain. they can be used to provide either an analog or digital output signal. datasheets available upon request 30 www.optoelectronics.perkinelmer.com absolute maximum ratings maximum temperatures storage and operating: -40? to 100? -40? to 110? (vtt1015, vtt1016, vtt1017, vtt1115, vtt1116, and vtt1117) -40? to 85? (vtt7222, vtt7223, vtt7225, vtt7122, vtt7123, and vtt7125) -40? to 70? (vtt9002, vtt9003, vtt9102, and vtt9103) continuous power dissipation: 50 mw 100 mw (vtt9002, vtt9003, vtt9102, and vtt9103) 250 mw (vtt1015, vtt1016, vtt1017, vtt1115, vtt1116, and vtt1117) derate above 30?: 0.71 mw/?c 2.5 mw/?c (vtt9002, vtt9003, vtt9102, and vtt9103) 3.12 mw/?c (vtt1015, vtt1016, vtt1017, vtt1115, vtt1116, and vtt1117) 0.91 mw/?c (vtt7122, vtt7123, vtt7125) maximum current: 25 ma 200 ma (vtt1015, vtt1016, vtt1017, vtt1115, vtt1116, and vtt1117) lead-soldering temperature: 260? (1.6 mm from case, 5 sec. max.)
npn phototransistors .25", small area, high speed .04", medium area, high sensitivity .05", large area, high sensitivity www.optoelectronics.perkinelmer.com 31 phototransistors light current dark current angular part h fc (mw/cm 2 )na v ce v br(ceo) v br(eco) v ce(sat) t r /t f response number ma min. v ce =5 v max. volts volts min. volts min. volts max. ?ec, typ. 1/2 vtt1222w 0.9 100 (5) 10 20 50 6 0.25 2 40? vtt1223w 1.5 100 (5) 10 20 40 6 0.25 3 40? vtt1225 4 100 (5) 100 10 30 5 0.25 1.5 ?? vtt1226 7.5 100 (5) 100 10 30 5 0.25 3 5? vtt1227 12 100 (5) 100 10 30 5 0.25 4 5? vtt3323la 2 20 (1) 100 10 30 5 0.25 3 10? vtt3324la 4 20 (1) 100 10 30 5 0.25 4 10? vtt3325la 6 20 (1) 100 10 30 5 0.25 5 10? vtt3423la 1 20 (1) 100 10 30 5 0.25 3 10? vtt3424la 2 20 (1) 100 10 30 5 0.25 4 10? vtt3425la 3 20 (1) 100 10 30 5 0.25 5 10? vtt7122 1 100 (5) 100 10 30 5 0.25 2 36? vtt7123 2 100 (5) 100 10 30 5 0.25 2 36? vtt7125 4.5 100 (5) 100 10 30 5 0.25 2 36? vtt7222 0.9 100 (5) 100 10 30 5 0.25 2 36? vtt7223 1.8 100 (5) 100 10 30 5 0.25 2 36? vtt7225 4 100 (5) 100 10 30 5 0.25 4 36? .025" npn phototransistors technical specification light current dark current angular part h fc (mw/cm 2 )na v ce v br(ceo) v br(eco) v ce(sat) t r /t f response number ma min. v ce =5 v max. volts volts min. volts min. volts max. ?ec, typ. 1/2 vtt1212 2 20 (1) 100 10 30 5 0.25 4 10? vtt1214 4 20 (1) 100 10 30 5 0.25 6 10? vtt9002 2 100 (5) 100 10 30 6 0.55 4 50? vtt9003 5 100 (5) 100 10 30 6 0.55 6 50? vtt9102 6 100 (5) 100 5 30 4 0.55 6 42? vtt9103 13 100 (5) 100 5 30 4 0.55 10 ?2? .04" npn phototransistors technical specification light current dark current angular part h fc (mw/cm 2 )na v ce v br(ceo) v br(eco) v ce(sat) t r /t f response number ma min. v ce =5 v max. volts volts min. volts min. volts max. ?ec, typ. 1/2 vtt1015 0.4 100 (5) 25 20 40 6 0.4 5 35? vtt1016 1 100 (5) 25 20 30 6 0.4 5 35? vtt1017 2.5 100 (5) 25 10 20 4 0.4 8 35? vtt1115 1 20 (1) 100 10 30 6 0.4 5 15? vtt1116 2 20 (1) 100 10 30 4 0.4 8 15? vtt1117 4 20 (1) 100 10 30 4 0.4 8 15? .05" npn phototransistors technical specification table key i c light current i ceo dark current h=0 v br(ceo) collector breakdown i c =100 ?, h=0 v br(eco) emitter breakdown i e =100 ?, h=0 v ce(sat) saturation voltage i c =1ma, h=400 fc t r /t f rise/fall time i c =1 ma, r l =100 ? clear t- 1 3/4 (5 mm) plastic package vtt1212 vtt1223w vtt1227 vtt1214 vtt1225 vtt1222w vtt1226 clear long t- 1 (3 mm) plastic package vtt3323la vtt3324la vtt3325la irt long t- 1 (3 mm) plastic package vtt3423la vtt3424la vtt3425la molded, lensed lateral package vtt7122 vtt7123 vtt7125 irt molded, lensed lateral package vtt7222 vtt7223 vtt7225 clear epoxy to-106 ceramic package vtt9002 vtt9003 epoxy lensed to-106 ceramic package vtt9102 vtt9103 to-46 flat window package vtt1015 vtt1016 vtt1017 to-46 lensed package vtt1115 vtt1116 vtt1117 electro-optical characteristics @ 25? electro-optical characteristics @ 25? electro-optical characteristics @ 25?
description perkinelmer optoelectronics?cmos buffered multiplexers offer the ideal solution to the increasing demand for low noise amplification and multiplexing applications. they are designed to interface with a variety of photosensitive arrays constructed from materials such as amorphous silicon, gallium arsenide, germanium or mercury cadmium telluride. these devices, available in 64, 128 and 256 channel models, are widely used in medical, scientific, and industrial applications to read electrical signals generated by x-ray, infrared, and other radiation beyond the direct detection range of silicon. xl-1 variable-gain multiplexers these advanced devices offer a versatile solution to the increasing demand for low noise amplification and multiplexing. they are designed to interface with linear photo sensitive arrays, such as those made of gallium arsenide, germanium or amorphous silicon, or any of several special purpose infrared-sensitive materials. each channel of the multiplexer consists of a charge amplifier in series with two separate buffered sample-and-hold paths for correlated double sampling (cds). a broad range of electrically selectable integrating capacitors provide accommodation for charge packets from a wide range of sensor materials, pixel sizes and exposure levels. xl-1 multiplexers are available in 64, 128 or 256 active channels, all with 100? channel-to-channel spacing. they offer a dynamic range in excess of 90 db, low offset voltage, bidirectional readout, and integrated calibration facilities. buffered multiplexers 32 www.optoelectronics.perkinelmer.com xl-1 variable-gain multiplexers multiplexer individual channel schematic reset mux sample mux + - + - reset clock test charge input pad integrator reset + - + - sample clock video buffer v out s pad + - video buffer v out r pad v ref v dd 1, 2, 4 or 16 pf
www.optoelectronics.perkinelmer.com 33 buffered multiplexers & image tubes high-resolution image tubes description the use of image tubes in special applications is indispensable. the camera tube is superior to solid-state image sensors in high-resolution televi- sion systems with high frame-repetition rates. the essential characteristics of the camera tubes, such as absolute and spectral sensitivity, resolution and lag are determined by the photoconducting material (target) and the electron optical parameters of the scanning electron beam. resistron tubes these are universally applied low cost image tubes. the target material is antimony trisulfide (sb 2 s 3 ) which provides good resolution and integra- tion of quantum noise. saticon tubes saticon tubes with a selenium storage layer (seaste) are suited for acquiring fast moving images, especially in med- ical applications. their typical character- istics: low lag, excellent resolution and signal uniformity. newvicon tubes worldwide, these tubes have been taken out of production. we offer resistron tubes as a close equivalent to replace newvicons. image tubes facepl. dark part length diameter temperature current illumination number version characteristics mm mm ?c na ix xq1305 resistron electrostatic focusing 108 19.8 30+/-2 20 10 xq1371 resistron large dyn. range, gr.1 103 19.8 30+/-2 20 10 xq1372 resistron gr.2 103 19.8 30+/-2 20 10 industrial and surveillance 2/3" tubes technical specification facepl. dark part length diameter temperature current illumination number version characteristics mm mm ?c na ix xq1371sf resistron radiation resistant 103 19.8 30+/-2 20 10 xq1372sf resistron with reticles 103 19.8 30+/-2 20 10 xq1380 newvicon radiation resistant 108 19.8 25+/-2 2(<4) 1 special tv 2/3" tubes technical specification facepl. dark part length diameter temperature current illumination number version characteristics mm mm ?c na ix xq1292f resistron fiberoptic faceplate 162 28.6 30+/-2 20 10 xq1292sf resistron radiation resistant 162 28.6 30+/-2 20 10 xq1292rf newvicon with reticles special tv 1" tubes technical specification facepl. dark part length diameter temperature current illumination number version characteristics mm mm ?c na ix xq1290 resistron high sensitivity + resolution 162 28.6 30+/-2 30 1.7 xq1395 resistron high resolution / line no. 162 28.6 30+/-2 30 1.7 xq1560 saticon short lag / high beam 162 28.6 30+/-2 <1 1.7 xq1570 saticon low lag / high beam 162 28.6 30+/-2 <1 1.7 xq1575 saticon with diode gun structure 162 28.6 30+/-2 <1 1.7 medical 1" tubes technical specification facepl. dark part length diameter temperature current illumination number version characteristics mm mm ?c na ix xq1292 resistron large dyn. range, gr.1 162 28.6 30+/-2 20 10 xq1293 resistron gr.2 162 28.6 30+/-2 20 10 industrial and surveillance 1" tubes technical specification
description line scan sensors are ideal for imaging objects in motion on webs or conveyors. applications range from inspection of lead frames and labels to scanning mail and parcels. p-series linear photodiode array imagers in p-series linear imagers, perkinelmer has combined the best features of high-sensitivity photodiode array detection and high- speed, charge-coupled scanning to offer an uncompromising solution to the increasing demands of advanced imaging applications. these high-performance imagers feature low noise, high sensitivity, impressive charge-storage capacity, and lag-free dynamic imaging in a convenient 1-output architecture. the 14 ? square contiguous pixels in these imagers reproduce images with minimum information loss and artifact generation, while their unique photodiode structure provides excellent blue response extending below 250 nm in the ultraviolet. the two-phase ccd readout registers require only modest clocking voltages, yet achieve excellent charge-transfer efficiency. additional electrodes provide independent control of exposure and antiblooming. finally, high-sensitivity readout amplifiers provide a large-output signal to relax the noise requirements on the camera electronics that follow. these versatile imagers are available in array lengths of 512 to 2048 elements with either low-cost glass or uv-enhanced fused silica windows. perkinelmer optoelectronics also maintains capabilities to manufacture line scan imagers up to 8192 pixels combined with 4 outputs and 7 or 14? pixels with existing designs. contact perkinelmer for more information. line scan imagers features 2500:1 dynamic range ? ultra-low image lag ? electronic exposure control ?antiblooming control ? square pixels with 100% fill factor ? extended spectral range 250-1000 nm typical applications high-speed document reading ?web inspection ?mail sorting ?production measurement ?position sensing ?spectroscopy principle of operation line scan sensors are ideal for imaging objects in motion on webs or conveyors. datasheet available upon request 34 www.optoelectronics.perkinelmer.com
line scan imagers? series www.optoelectronics.perkinelmer.com 35 line scan imagers pixel spectral response pixel horizontal part pixel count size number of range data rate dynamic clocking number elements ? outputs nm mhz range typ. rl0512p 512 14x14 1 250-1000 40 2500:1 2 ?@ 5 v rl1024p 1024 14x14 1 250-1000 40 2500:1 2 ?@ 5 v rl2048p 2048 14x14 1 250-1000 40 2500:1 2 ?@ 5 v p series technical specification operating temperature: 0?c min. to +55?c max. storage temperature: -25?c min. to +85?c max. lag: <1% saturation voltage: 600 mv spectral sensitivity curve 80 90 70 60 50 40 30 20 10 0 80 90 70 60 50 40 30 20 10 0 350 250 450 550 650 750 850 950 1050 wavelength (nm) responsivity (v/ j/cm 2 ) right scale left scale qe (%)
description for nearly thirty years, perkinelmer optoelectronics has been a leader in the development of sensors for spectroscopy. in spectroscopy and other instrumentation applications, large pixels, very high charge storage capacity, low readout noise and dark current, and direct access to the charge packet are all critical to delivering the high dynamic range and linear response demanded. the cmos photodiode array architecture meets all of these needs in a way no other sensor technology can match. l-series visible range spectroscopy arrays perkinelmer optoelectronics?l-series cmos linear photodiode arrays offer a high-quality, low-cost solution for spectroscopy and colorimetry applications in the 300-1000 nm range. the l-series familys combination of high sensitivity, low dark current, low switching noise and high saturation charge provides excellent dynamic range and great flexibility in setting integration time. l-series sensors consist of a linear array of silicon photodiodes, each connected to a mos switch for readout controlled by an integrated shift register scanning circuit. under external clock control, the shift register sequentially enables each of the switches, directing the charge on the associated photodiode to an output line. a dummy output provides clock noise cancellation. l-series devices are mounted in ceramic side-brazed, 22-pin, dual-inline packages with ground and polished fused silica windows and are pin-compatible with earlier perkinelmer sb and tb-series sensors. l-series models are available with pixel spacings of 25 ? and 50 ? and lengths from 128 to 1024 pixels. all models feature a 2500 ? pixel aperture to simplify alignment in spectroscopic instruments. cmos photodiode arrays features 2.5 mm photodiode aperture ? extremely low dark leakage current ? low power dissipation ?clock-controlled sequential readout at rates up to 1 mhz ? single-supply operation with hcmos-compatible inputs ? single shift register design ? wide dynamic range ? differential video output for clock noise cancellation ? high saturation charge 10 pc (25 ?) or 20 pc (50 ?) ? antiblooming function for low crosstalk ? line reset mode for simultaneous reset of all photodiodes ? wide spectral response: 300 to 1000 nm ? polished fused silica window ? on-chip diodes (two) for temperature monitoring typical applications ?spectroscopy ?colorimetry datasheet available upon request 36 www.optoelectronics.perkinelmer.com
l-series linear cmos spectroscopy sensor 25 or 50 ? pitch, 2.5 mm aperture 128, 256, 512 or 1024 photodiode elements with 25 ? center-to-center spacing 128, 256, or 512 photodiode elements with 50 ? center-to-center spacing www.optoelectronics.perkinelmer.com 37 cmos photodiode arrays video capacitance saturation saturation dark part @ 5 v bias @ 2.5 v bias sensitivity exposure charge dynamic current typ. number pf pf c/j/cm 2 nj/cm 2 pc range pa rl1201 6.7 2x10 -4 50 10 70,000 0.2 rl1202 10.2 2x10 -4 50 10 70,000 0.2 rl1205 15.4 2x10 -4 50 10 70,000 0.2 rl1210 28.7 2x10 -4 50 10 70,000 0.2 rl1501 9.1 4x10 -4 50 20 100,000 0.4 rl1502 14 4x10 -4 50 20 100,000 0.4 rl1505 25 4x10 -4 50 20 100,000 0.4 l series technical specification sensitivity exposure/ saturation charge: measured at 2.5 v video line bias average 600-700 nm, includes 8% window loss dark current: maximum dark current 1.5 x average dark current spectral response peak: 650 nm, range: 300-1000 nm typ. operating temperature: 0?c min. to 55?c max. storage temperature: -78?c min. to +85?c max. center-to-center spacing: rl12xx, 25 ? rl15xx, 50 ? quantum efficiency 80 90 70 60 50 40 30 20 10 0 350 250 450 550 650 750 850 950 1050 wavelength (nm) qe (%)
description the ra1133j is a full-frame ccd sensor with reset capabilities designed specifically for use in spectroscopy, biomedical imaging and related scientific imaging applications. the package for the array is designed with an integrated two-stage thermoelectric cooler. this enables the device to be run 40? below ambient temperature, -15? when compared to room temperature. its combination of very low noise and low dark current make the ra1133j ideal for low-light, high dynamic range, and high- resolution applications. the imager is structured with a single-output register at one end of the imaging columns. a lateral reset drain is located adjacent to this readout register, which enables the dumping of accumulated charge from the array. two-phase clocks are needed to drive the readout register, and three-phase clocks are needed to drive imaging cells. the array is available in a 30-pin metal package with an integrated te cooler. cooled ccd sensors features 363,000 picture elements (pixels) in a 1100x330 configuration ?24 ? square pixels ? 2-phase buried channel process ? on-chip amplifier for low noise and high-speed readout ? dynamic range greater than 25,000:1 ? on-chip temperature sensor ? two-stage te cooler integrated into the package ?hermetically sealed ? 100% fill factor ? 10mhz data rate typical applications spectroscopy fluorescence microscopy luminescence protein quantification datasheet available upon request 38 www.optoelectronics.perkinelmer.com dynamic range: full well/read noise, mpp mode full well charge: rload = 5.1 k ? , mpp mode dark current mpp: mpp mode at -15?c read noise: measured at 500 khz at -15?c absolute maximum ratings storage temperature: -55? min. to 85? max. operating temperature: 0? min. to 55? max. general characteristics parameter symbol min. typ. max. units format 1100x330 pixel size 24x24 ? imaging area 26.4x7.92 mm dynamic range dr 25,000:1 full well charge q sat 250 300 ke- saturation voltage v sat 1000 1200 mv dark current mpp dl 1 3 pa/cm2 photo response non uniformity prnu 5 10 % dark signal uniformity dsnu 2 5 ? charge transfer efficiency cte >0.9999 >0.99995 output amplifier gain 4 v/e- operating frequency fclock 10 mhz read noise 10 e-
cooled ccd sensor 24 ? sq. pitch, 1100x330 pixel configuration principle of operation a major source of dark current in devices such as these originates in surface states at the si-sio 2 interface. a unique design and process enables the ra1133j to be run in ?ulti-pinned phase?or mpp mode of operation. this helps eliminate dark current generation in the interface surface states. by holding the vertical clocks at negative potential during integration and horizontal signal readout, the surface will not be depleted and the surface state will not generate dark current. www.optoelectronics.perkinelmer.com 39 cooled ccd sensors pixel image saturation dark part size area voltage current mpp dynamic read number format ? mm mv typ. pa/cm 2 range noise ra1133jas-912 1100x330 24x24 26.4x7.92 1200 1 >25,000:1 10e- technical specification dynamic range: full well/read noise, mpp mode dark current mpp: mpp mode at -15?c read noise: measured at 500 khz at -15?c storage temperature: -55?c min. to +85?c max. operating temperature: 0?c min. to 55?c max. 60 50 40 30 20 10 0 300 200 400 500 600 700 800 900 1000 1100 wavelength, nm quantum efficiency (%) quantum efficiency
description the pt1109aaq and pt1225aaq time delay integration (tdi) imagers combine the best features of photodiode array detection and tdi operation to offer an uncompromising solution to the increasing demands of high-speed imaging applications. pt 1109aaq the pt1109aaq is a high-performance tdi imager featuring a unique 13 ? x 13 ?-square tdi pixel architecture. the chip has 96 stages with 1024 pixels per stage, allowing for stable imag- ing in both fast and low-light applications. eight extra stages are present at the front end of the sensor, allowing for adequate dark balancing. full-well capacity of the sensor is 390,000 electrons, and readout noise (rms) is <90 electrons, allowing for a >4300:1 dynamic range. pt1225aaq the pt1225aaq is a high-performance tdi imager featuring a unique 27 ? x 27 ?-square tdi pixel architecture. the chip has 256 stages with 2048 pixels per stage, allowing for stable imaging in both fast and low-light applications. full-well capaci- ty of the sensor is 700,000 electrons, and readout noise (rms) is <350 electrons, allowing for a dynamic range of over 66 db. tdi imagers pt1109aaq-711 features 1024 pixel x 96 stage unidirectional operation 20 mhz data rate high dynamic range (4300:1) line rates to 19 khz quantum efficiency of 42% at 700 nm 13 ? x 13 ? pixel size >0.99995 horizontal, >0.9999 vertical cte at maximum saturation exposure pt1225aaq-711 features 2048 pixel x 256 stage 64 outputs 8 mhz data rate per output unidirectional operation high dynamic range of over 66 db line rates to 256 khz 27 ? x 27 ? pixel size >0.99995 horizontal, >0.9999 vertical cte at maximum saturation exposure typical applications semiconductor inspection wafer inspection sorting applications datasheets available upon request 40 www.optoelectronics.perkinelmer.com
tdi imagers?t 1109aaq and pt1225aaq www.optoelectronics.perkinelmer.com 41 tdi imagers pt1109aaq-711 pt1225aaq-711 pixel count* 1024 active elements 2048 active elements extra stages* 8 pixel size 13x13 ? 27x27 ? number of directions 11 integration stages** 96 256 extra stages** 1 number of outputs 164 pixel rate 20 mhz 8 mhz per output line output rate (max.) 19 khz 256 khz pixel fill factor 100% 100% net quantum efficiency >42% at 700 nm power dissipation 15 mw per tap, 960 mw total well capacity >390,000 electrons per pixel >700,000 electrons per pixel rms noise >66 db dynamic range <350 e- rms cte @ q sat >0.99995 (horizontal) >0.99995 >0.9999 (vertical) photo response +/-10% +/-10% within output non-uniformity (prnu) +/-10% across array spectral response 250 to 700 nm dark current <1% of v sat sensitivity 3.5 ?/electron 1.0 ?/electron operating temperature 0 to 55?c 0 to 55?c package type 32 pin ceramic ? technical specification operating temperature: 0?c min. to 50?c max. * in readout direction ** in tdi direction
description light emitting diodes (leds) are solid-state p-n junction devices that emit light when forward biased. an ired is an infrared emitting diode, a term specifically applied to perkinelmer ir emitters. unlike incandescent lamps, which emit light over a very broad range of wavelengths, leds emit light over such a narrow bandwidth that they appear to be emitting a single ?olor . their small size, long operating lifetimes, low power consumption, compatibility with solid-state drive circuitry, and relatively low cost make leds the preferred light source in many applications. leds are made from a wide range of semiconductor materials. the emitted peak wavelength depends on the semiconductor material chosen and how it is processed. leds can be made that emit in the visible or near-infrared part of the spectrum. the p-n junction is formed by doping one region of the material with donor atoms and the adjacent region with acceptor atoms. like all p-n junction devices, leds exhibit the familiar diode current-voltage characteristics. leds emit light only when they are biased in the forward direction. under forward-biased conditions, carriers are given enough energy to overcome the potential barrier existing at the junction. after crossing the junction, these carriers will recombine. a percentage of the carriers will recombine by a radiative process in which the hole-electron recombination energy is released as a photon of light. the remaining carriers recombine by a non-radiative process and give up their energy in the form of heat. the amount of light generated, or power output of the led, varies almost linearly with forward current. doubling the forward current approximately doubles the power output. 880nm ireds this series of infrared emitting diodes (ireds) consists of three standard chips in nine different packages that provide a broad range of mounting, lens and power-output options. 940nm ireds this series of infrared emitting diodes (ireds) consists of two standard chips in three different packages. infrared emitting diodes features 880 nm nine standard packages in hermetic and low-cost epoxy ? end- and side-radiating packages ?graded output ? high efficiency gaaias, 880 nm lpe process delivers twice the power of conventional gaas 940 nm emitters features 940 nm three standard packages in hermetic and low-cost epoxy ?end-radiating packages ? high power gaas, 940 nm lpe process typical applications ?computer/business equipment ?write-protect control ?margin controls?rinters ?industrial ? led light source?ight pens ?security systems ?safety shields ?consumer ?coin counters ? lottery card readers ?position sensors?oysticks ?remote controllers?oys, appliances, audio/visual equipment ?games?aser tag ? camera shutter control principle of operation because they emit at wavelengths which provide a close match to the peak spectral response of silicon photodetectors, both gaas and gaaias ireds are often used with phototransistors. datasheets available upon request 42 www.optoelectronics.perkinelmer.com
infrared emitting diodes vte formats 880 nm and 940 nm www.optoelectronics.perkinelmer.com 43 infrared emitting diodes output forward drop irradiance e e irradiance cond . radiant total test current v f @ i ft half power part mw/cm 2 distance diameter intensity i e power i ft ma volts beam angle number min. typ. mm mm m w/sr min. p o mw typ. pulsed typ. max. 1/2 typ. vte1063 3.8 5 36 6.4 49 80 1 2.8 3.5 ?5? vte1163 22 28 36 6.4 285 110 1 2.8 3.5 ?0? vte1261 3 3.9 36 6.4 39 20 100 1.5 2 10? vte1262 4 5.2 36 6.4 52 25 100 1.5 2 10? vte1281-1 2.5 3.3 36 6.4 32 20 100 1.5 2 10? vte1281-2 5 6.5 36 6.4 65 25 100 1.5 2 10? vte1281f 0.16 0.21 36 6.4 2.1 20 100 1.5 2 45? vte1281w-1 1.2 1.6 36 6.4 16 20 100 1.5 2 25? vte1281w-2 2.5 3.3 36 6.4 32 25 100 1.5 2 25? vte1285 3 5.5 36 6.4 39 20 100 1.5 2 8? vte1291-1 2.5 3.3 36 6.4 32 20 100 1.5 2 12? vte1291-2 5 6.5 36 6.4 65 25 100 1.5 2 12? vte1291w-1 1.2 1.6 36 6.4 16 20 100 1.5 2 25? vte1291w-2 2.5 3.3 36 6.4 32 25 100 1.5 2 25? vte1295 3 5.5 36 6.4 39 20 100 1.5 2 8? vte3372la 2 2.6 10.16 2.1 2 3 20 1.3 1.8 ?0? vte3374la 4 5.2 10.16 2.1 4.1 5 20 1.3 1.8 ?0? vte7172 0.4 0.6 16.7 4.6 1.1 2.5 20 1.3 1.8 ?5? vte7173 0.6 0.8 16.7 4.6 1.7 5 20 1.3 1.8 ?5? vte 880 nm series technical specification output forward drop irradiance e e irradiance cond . radiant total test current v f @ i ft half power part mw/cm 2 distance diameter intensity i e power i ft ma volts beam angle number min. typ. mm mm mw/sr min. p o mw typ. pulsed typ. max. 1/2 typ. vte1013 2.1 2.7 36 6.4 27 30 1 1.9 2.5 ?5? vte1113 12 15 36 6.4 156 30 1 1.9 2.5 ?0? vte3322la 1 1.3 10.16 2.1 1 1.5 20 1.25 1.6 ?0? vte3324la 2 2.6 10.16 2.1 2 2.5 20 1.25 1.6 ?0? vte 940 nm series technical specification electro-optical characteristics @ 25? electro-optical characteristics @ 25? gaalas infrared emitting diodes to-46 flat window package vte1063 to-46 lensed package vte1163 t- 1 3/4 (5 mm) plastic package vte1261 vte1281f vte1291-2 vte1262 vte1281w-1 vte1291w-1 vte1281-1 vte1281w-2 vte1291w-2 vte1281-2 vte1291-1 t- 1 3/4 (5 mm) bullet package vte1285 vte1295 long t-1 (3 mm) plastic package vte3372la vte3374la molded lateral package vte7172 vte7173 gaas infrared emitting diodes to-46 flat window package vte1013 to-46 lensed package vte1113 long t-1 plastic package vte3322la vte3324la
description pulsed laser diodes these devices range in wavelength from 850 nm to 1550 nm and are produced using vapor phase epitaxial (vpe) and mocvd growth techniques. fiber optic pigtailed devices employ an advanced fibre alignment process yielding highly stable fiber to laser diode positioning. alternative packages and fiber optic core diameters may be supplied on a custom basis. high energy laser diodes?uasi cw lasers these devices have been designed specifically to meet the demanding requirements of laser initiated ordnance (lio) applications. product offerings include a 9.0 mm to-style package and an 8 pin minidil pigtailed package equipped with a rear facet monitor photodiode and 100/140 ? optical fiber. the 980 nm laser chip employs advanced epitaxial materials and processing techniques, providing reliable high optical power output capability and significant power retention at elevated temperatures. alternate package outlines and fiber optic core diameters may be considered on a custom basis. typical applications ? laser range finding ?lidar ?optical fusing ?high speed switching ?weapons simulation ?laser scanning ? fiber optic instrumentation ? yag laser simulation 44 www.optoelectronics.perkinelmer.com laser diodes peak output peak forward pulse maximum response beam diverg. number part preferred power current width duty factor time qxq^ (deg.) of diode number package p ko (w) i f (a) t w (ns) df (%) tr (ns) fwhm elements pfas1s03 to-52 5.5 7 50 0.025 <1 12x30 1 pfas1s09 to-52 17 20 50 0.025 <1 12x30 1 pfas1s12 to-52 26 30 50 0.025 <1 12x30 1 pfas1s16 to-52 34 40 50 0.025 <1 12x30 1 pfas2s09 to-52 34 20 50 0.025 <1 12x30 2 pfas2s12 to-52 52 30 50 0.025 <1 12x30 2 pfas3s12 to-52 78 30 50 0.025 <1 12x30 3 multiple quantum well types?50 nm technical specification test conditions: t = 22? peak output peak forward pulse maximum response beam diverg. number part preferred power current width duty factor time qxq^ of diode number package p ko (w) i f (a) t w (ns) df (%) tr (ns) (deg.) elements pgas1s03 to-52 5.5 7 150 0.01 <1 10x25 1 pgas1s06 to-52 12 15 150 0.01 <1 10x25 1 pgas1s09 to-52 18 22 150 0.01 <1 10x25 1 pgas1s12 to-52 24 30 150 0.01 <1 10x25 1 pgas1s16 to-52 33 40 150 0.01 <1 10x25 1 pgas1s24 to-52 49 60 150 0.01 <1 10x25 1 pgas3s06 to-52 34 15 150 0.01 <1 10x30 3 pgas3s09 to-52 50 22 150 0.01 <1 10x30 3 pgas3s12 to-52 67 30 150 0.01 <1 10x30 3 pgas4s12 to-52 90 30 150 0.01 <1 10x30 4 pgas4s16 to-52 120 40 150 0.01 <1 10x30 4 multiple quantum well types?05 nm?ga series technical specification test conditions: t = 22?
www.optoelectronics.perkinelmer.com 45 laser diodes peak output peak forward pulse maximum response beam diverg. number part standard power current width duty factor time qxq^ (deg.) of diode number package p ko (w) i f (a) t w (ns) df (%) tr (ns) fwhm elements pvgr1s06 cd9.0cap 4 20 200 0.1 <1 20x40 1 pvgs1s06 to-52 4 20 200 0.1 <1 20x40 1 pvgr2s06 cd9.0cap 8 20 100 0.1 <1 20x40 2 pvgs2s06 to-52 8 20 100 0.1 <1 20x40 2 pvgr4s12 cd9.0cap 40 75 50 .025 <1 20x40 4 double heterostructure types?550 nm technical specification test conditions: t = 22? centre peak output peak forward pulse maximum beam diverg. fibre optic part standard wavelength power current width duty factor qxq^ (deg.) core/clad number package i 0 (nm) p ko (w) i f (a) t w (ns) df (%) fwhm diam. (?) c86153e-12 14 pin dil 850 0.75 5 200 0.1 62.5/125 c86119e 10/32 coax 1064 2 4 200 0.1 10x40 ? c86120e-10 14 pin dil 1064 0.4 4 200 0.1 100/140 double heterostructure and quantum well types?50 nm and 1064 nm technical specification test conditions: t = 22? peak output peak forward pulse maximum response beam diverg. fibre optic part standard power current width duty factor time qxq^ (deg.) core/clad number package p ko (w) i f (a) t w (ns) df (%) tr (ns) fwhm diam. (?) c86118e cd9.0cap 1.5 2 10 10 <1 10x35 ? c86155e-10 minidil 1.2 2 10 10 <1 100/140 c86159e-09 minidil 2 4 10 10 <1 ?200/240 quantum well types?80 nm technical specification test conditions: t = 22? peak output peak forward pulse maximum beam diverg. number part standard power current width duty factor qxq^ of diode number package p ko (w) i f (a) t w (ns) df (%) (deg.) elements pgew1s03 to-52 plastic 5 7 30 0.0075 10x25 1 pgew1s09 to-52 plastic 15 25 30 0.0075 10x25 1 pgew2s09 to-52 plastic 33 25 30 0.0075 10x30 2 pgew3s09 to-52 plastic 50 25 30 0.0075 10x30 3 multiple quantum well types?05 nm?gew series technical specification test conditions: t = 22? laser diodes laser diodes
digital sidestream co 2 bench the perkinelmer digital sidestream co 2 bench represents a breakthrough in solid-state technology. these sensors achieve the highest levels of accuracy and reliability while having no moving parts. the low power consumption and compact design set a new standard in sidestream monitoring. the bench incorporates our latest advances in component design and signal processing. all design requirements of astm standards have been met or exceeded. the measurement technique is non-dispersive infrared absorption, which utilizes a unique infrared emitter design in conjunction with state-of-the-art detector technology. output from the bench is a digitized voltage function of co 2 concentration within the sampling cell. the sidestream sensor is on a printed circuit board with an rs232 connector, has added pneumatics circuit, and uses standard sampling disposables. digital mainstream co 2 sensor perkinelmer introduces a significant advancement in mainstream co 2 sensing. output from the sensor is a digitized voltage function of co 2 concentration, providing a noise-free signal and easy interfacing. all processing electronics are self-contained within the compact and rugged sensor head. the solid-state design incorporates our latest advances in component innovation and signal processing, and ensures high accuracy and long life. all design requirements of astm standards have been met or exceeded. the measurement technique is non-dispersive infrared absorption, which utilizes a unique infrared emitter design in conjunction with state-of-the-art detector technology. this sensor has self-contained electronics on a flex circuit, a cable, and uses low-cost disposable airway adapters. medical sensors features meets astm standards for capnometers neonatal, pediatric and adult use low-flow design fast rise time for high respiration rates compatible with standard sampling disposables easy-to-interface rs232 digital output rugged solid-state sensor?o moving parts low power consumption fast warm-up time long life small footprint custom packaging available typical applications real-time breath-to-breath quantita- tive end-tidal co 2 measurement datasheets available upon request 46 www.optoelectronics.perkinelmer.com
co 2 sidestream sensors mainstream co 2 sensors www.optoelectronics.perkinelmer.com 47 medical sensors digital sidestream co 2 bench digital mainstream co 2 sensor method non-dispersive infrared absorption non-dispersive infrared absorption calibration 3-point calibration 3-point calibration respiration rate 150 bpm 150 bpm input voltage 5 v 5 v power consumption 1.0 w typical, 1.5 w max 1.0 w typical, 1.5 w max output digital serial rs232 digital serial rs232 measurement range 0-100 mmhg 0-100 mmhg accuracy ? mmhg plus 5% of reading ? mmhg ?% from 0 to 10% meets astm standards to 100mmhg meets astm standards to 100mmhg resolution 1 mmhg 1 mmhg rise time less than 250 ms less than 200 ms flow rate 50 ml/min 10 ml/min n/a warm-up time 1 minute to astm standards 1 minute to astm standards 5 minutes to published specifications 5 minutes to published specifications mechanical shock 100 g 1/2 sine wave 100 g 1/2 sine wave temperature 0-50?c (operating) -40-75?c (storage) 0-40?c (operating at published specifications) 0-50?c (operating at astm standards) -40-75?c (storage) relative humidity 15-95% non-condensing (operating) 15-95% non-condensing (operating) 10-95% non-condensing (storage) 10-95% non-condensing (storage) physical dimensions 2.5x1.5x0.75" 1.38x1.06x0.88" cable n/a 10-foot standard length connector db-9 or custom standard or custom technical specification
. corporate headquarters: perkinelmer optoelectronics, 44370 christy street, fremont, ca 94538-3180 p: (510) 979-6500, (800) 775-6786, f: (510) 687-1140 www.optoelectronics.perkinelmer.com

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