1 transistor 2sC829 silicon npn epitaxial planer type for high-frequency amplification n features l optimum for rf amplification, oscillation, mixing, and if stage of fm/am radios. n absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage collector current collector power dissipation junction temperature storage temperature 1:emitter 2:collector 3:base jedec:toC92 eiaj:scC43a 5.0 0.2 4.0 0.2 5.1 0.2 13.5 0.5 0.45 +0.2 ?.1 0.45 +0.2 ?.1 1.27 1.27 2.3 0.2 2.54 0.15 2 13 symbol v cbo v ceo v ebo i c p c t j t stg ratings 30 20 5 30 400 150 C55 ~ +150 unit v v v ma mw ?c ?c n electrical characteristics (ta=25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio transition frequency common emitter reverse transfer capacitance reverse transfer impedance symbol v cbo v ceo v ebo h fe * f t c re z rb conditions i c = 10 m a, i e = 0 i c = 2ma, i b = 0 i e = 10 m a, i c = 0 v ce = 10v, i c = 1ma v cb = 10v, i c = 1ma, f = 200mhz v ce = 10v, i c = 1ma, f = 10.7mhz v cb = 10v, i e = C1ma, f = 2mhz min 30 20 5 70 150 typ 230 1.3 max 250 1.6 60 unit v v v mhz pf w * h fe rank classification rank b c h fe 70 ~ 160 110 ~ 250 www.datasheet.net/ datasheet pdf - http://www..co.kr/
2 transistor 2sC829 p c ta i c v ce i c v be i b v be v ce(sat) i c h fe i c f t i e z rb i e c re v ce 0 160 40 120 80 140 20 100 60 0 500 400 300 200 100 450 350 250 150 50 ambient temperature ta ( ?c ) collector power dissipation p c ( mw ) 018 612 0 12 10 8 6 4 2 ta=25?c i b =100 m a 80 m a 60 m a 40 m a 20 m a collector to emitter voltage v ce ( v ) collector current i c ( ma ) 02.0 1.6 0.4 1.2 0.8 0 60 50 40 30 20 10 v ce =10v ta=75?c ?5?c 25?c base to emitter voltage v be ( v ) collector current i c ( ma ) 01.8 0.6 1.2 0 120 100 80 60 40 20 v ce =10v ta=25?c base to emitter voltage v be ( v ) base current i b ( m a ) 0.1 1 10 100 0.3 3 30 0.01 0.03 0.1 0.3 1 3 10 30 100 i b /i b =10 ta=75?c 25?c ?5?c collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) 0.1 1 10 100 0.3 3 30 0 300 250 200 150 100 50 v ce =10v ta=75?c 25?c ?5?c collector current i c ( ma ) forward current transfer ratio h fe ?0.1 1 ?0 ?00 ?0.3 3 ?0 0 600 500 400 300 200 100 ta=25?c v cb =10v 6v emitter current i e ( ma ) transition frequency f t ( mhz ) ?0.1 ?0.3 ? ? ?0 0 80 60 20 50 70 40 10 30 f=2mhz ta=25?c v cb =6v 10v emitter current i e ( ma ) reverse transfer impedance z rb ( w ) 0.1 1 10 100 0.3 3 30 0 2.4 2.0 1.6 1.2 0.8 0.4 i c =1ma f=10.7mhz ta=25?c collector to emitter voltage v ce ( v ) common emitter reverse transfer capacitance c re ( pf ) www.datasheet.net/ datasheet pdf - http://www..co.kr/
3 transistor 2sC829 c ob v cb b ie g ie b re g re b fe g fe b oe g oe 1 3 10 30 100 0 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 i e =?ma f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 020 16 412 8 0 12 10 8 6 4 2 y ie =g ie +jb ie v ce =10v f=0.45mhz ?ma ?ma ?ma ?ma 58 25 10.7 100 i e =?0.4ma input conductance g ie ( ms ) input susceptance b ie ( ms ) ?0.5 0 ?0.1 ?0.4 0.2 ?0.3 ?.0 0 ?0.5 ?.0 ?.5 ?.0 ?.5 y re =g re +jb re v ce =10v f=0.45mhz i e =?ma ?ma ?ma ?ma ?0.4ma 25 58 100 10.7 reverse transfer conductance g re ( ms ) reverse transfer susceptance b re ( ms ) 0 100 80 20 60 40 ?20 0 ?0 ?0 ?0 ?0 ?00 y fe =g fe +jb fe v ce =10v i e =?ma ?ma ?ma ?0.1ma ?.4ma ?ma 0.45 0.45 10.7 10.7 f=10.7mhz 25 25 25 58 100 100 100 100 58 58 58 forward transfer conductance g fe ( ms ) forward transfer susceptance b fe ( ms ) 0 1.0 0.8 0.2 0.6 0.4 0 1.2 1.0 0.8 0.6 0.4 0.2 y oe =g oe +jb oe v ce =10v f=0.45mhz i e =?0.1ma ?ma ?ma ?ma ?ma ?0.4ma 58 10.7 25 100 output conductance g oe ( ms ) output susceptance b oe ( ms ) www.datasheet.net/ datasheet pdf - http://www..co.kr/
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