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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC5517 description high breakdown voltage- v cbo = 1700v (min) high switching speed wide area of safe operation built-in damper diode applications designed for horizontal defle ction output applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1700 v v ces collector-emitter voltage 1700 v v ebo emitter-base voltage 7 v i c collector current- continuous 6 a i cm collector current- peak 12 a i b b base current- continuous 3 a collector power dissipation @ t a =25 3 p c collector power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC5517 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e = 500ma; i c = 0 7 v v ce (sat) collector-emitter saturation voltage i c = 4.5a; i b = 0.9a 5.0 v v be (sat) base-emitter saturation voltage i c = 4.5a; i b = 0.9a 1.5 v i cbo collector cutoff current v cb = 1000v; i e = 0 v cb = 1700v; i e = 0 50 1.0 a ma h fe dc current gain i c = 4.5a; v ce = 5v 5 9 f t current-gain?bandwidth product i c = 0.1a; v ce = 10v 3 mhz v ecf c-e diode forward voltage i f = 4.5a 2.0 v switching times t stg storage time 5.0 s t f fall time i c = 4.5a; i b1 = 0.9a; i b2 = -1.8a 0.5 s isc website www.iscsemi.cn 2 |
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