? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. GM5401 maximum maximum maximum maximum ratings ratings ratings ratings ~? thermal thermal thermal thermal characteristics characteristics characteristics characteristics device device device device marking marking marking marking characteristic ? symbol ? rating ~? unit collector-emitter voltage ?O - lO? v ceo -150 vdc collector-base voltage ?O - O? v cbo -160 vdc emitter-base voltage lO - O? v ebo - 5 .0 vdc collector current continuous ?O - Bm ic -500 madc characteristic ? symbol ? max ? unit total device dissipation ? fr-5 board(1) t a = 25 h? 25 derate above25 ^ 25 fp p d 225 1.8 mw mw/ thermal resistance junction to ambient r ja 556 /w total device dissipation ? alumina substrate Xr (2) t a = 25 derate above25 ^ 25 fp p d 300 2.4 mw mw/ thermal resistance junction to ambient r ja 417 /w junct io n and storage temperature Y??? t j , t stg 150 , -55to+150 GM5401=2l GM5401=2l GM5401=2l GM5401=2l
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. GM5401 electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t (t (t (t a a a a = = = = 25 25 25 25 unless unless unless unless otherwise otherwise otherwise otherwise noted noted noted noted of?? 25 ) ) ) ) fr-5=1.0 0.75 0.062in. a lumina=0.4 0.3 0.024in.99.5%alumina. p u lse width < 300 u s;duty cycle < 2.0%. characteristic ? symbol ? min ? max ? unit collector-emitter breakdown voltage(3) ?O - lO? (ic=-1.0madc,i b =0) v (br)ceo -150 vdc collector-base breakdown voltage ?O - O? (ic=-100 adc,i e =0) v (br)cbo -160 vdc emitter-base breakdown voltage lOO? (i e =-10 adc,ic=0) v (br)ebo - 5 .0 vdc emitter cutoff current lO? (v eb =-3.0vdc,i c =0) i ebo -50 nadc collector cutoff current ?O? (v cb =-120vdc,i e =0) i cbo -50 nadc dc current gain ? h f e (i c =-1.0madc,v ce =-5.0vdc) 50 (i c =-10madc,v ce =-5.0vdc) 60 240 (i c =- 5 0madc,v ce =-5.0vdc) 30 collector-emitter saturation voltage ?O - lO?? (i c =-10madc, i b =-1.0madc) (i c =- 5 0madc, i b =-10madc) v ce(sat) -0.2 -0.5 vdc base-emitter saturation voltage O - lO?? (i c =-10madc, i b =-1.0madc) (i c =-50madc, i b =-5.0madc) v be(sat) -1.0 -1.0 vdc current-gain-bandwidth product - ?e (i c =-10madc,v ce =-10vdc,f=100mhz) f t 100 300 mhz output capacitance ? (v cb =-10.0vdc, i e =0, f=1.0mhz) c obo 6.0 pf small-signal current gain ? (v ce =-10vdc, i c =-1.0madc, f=1.0khz) h fe 40 200 noise figure S (v ce =-5.0vdc, i c =-200 adc,r s =1.0k f=1.0khz) nf 8.0 db
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. GM5401 dimension dimension dimension dimension b?
|
