inchange semiconductor isc product specification isc silicon npn power transistors bdt29/a/b/c description dc current gain -h fe = 40(min)@ i c = 0.4a collector-emitter sustaining voltage- : v ceo(sus) = 40v(min)- bdt29; 60v(min)- bdt29a 80v(min)- BDT29B; 100v(min)- bdt29c complement to type bdt30/a/b/c applications designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. absolute maximum rating s (t a =25 ) symbol parameter value unit bdt29 80 bdt29a 100 BDT29B 120 v cbo collector-base voltage bdt29c 140 v bdt29 40 bdt29a 60 BDT29B 80 v ceo collector-emitter voltage bdt29c 100 v v ebo emitter-base voltage 5 v i c collector current-continuous 1 a i cm collector current-peak 3 a i b b base current 0.4 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage ttemperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 4.17 /w r th j-a thermal resistance,junction to ambient 70 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors bdt29/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdt29 40 bdt29a 60 BDT29B 80 v ceo(sus) collector-emitter sustaining voltage bdt29c i c = 30ma; i b = 0 100 v v ce(sat) collector-emitter saturation voltage i c = 1a; i b = 0.125a b 0.7 v v be(on) base-emitter on voltage i c = 1a ; v ce = 4v 1.3 v i ces collector cutoff current v ce = v ceomax ; v be = 0 0.2 ma bdt29/a v ce = 30v; i b = 0 b i ceo collector cutoff current BDT29B/c v ce = 60v; i b = 0 b 0.1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 0.2 ma h fe-1 dc current gain i c = 0.2a ; v ce = 4v 40 h fe-2 dc current gain i c = 1a ; v ce = 4v 15 75 f t current-gain?bandwidth product i c = 0.2a ; v ce = 10v 3 mhz switching times t on turn-on time 0.3 s t off turn-off time i c = 1.0a; i b1 = -i b2 = 0.1a 1.0 s isc website www.iscsemi.cn
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