GN2S glass passivated junction silicon surface mount prv : 700 volts io : 1.25 am p eres features : * glass passivated chip * high current capability * high reliability * low reverse current * low forward voltage drop * pb / rohs free mechanical data : * case : smb molded plastic * epoxy : ul94v-o rate flame retardant * lead : lead formed for surface mount * polarity : color band denotes cathode end * mounting position : any * weight : 0.1079 gram maximum ratings and electrical characteristic s rating at 25 c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20%. symbol value unit maximum repetitive peak reverse voltage v rrm 700 v maximum rms voltage v rms 490 v maximum dc blocking voltage v dc 700 v minimum average output forward current ta = 25 c 1.25 tc = 55 c 3.75 peak forward surge current 8.3ms single half sine wave superimposed on rated load (jedec method) maximum forward voltage at i f = 2.0 a, tc = 25 c v f 1.0 v maximum dc reverse current ta = 25 c i r 2.0 a at rated dc blocking voltage ta = 100 c i r(h) 20 a typical junction capacitance (note1) c j 75 pf junction temperature range t j - 65 to + 150 c storage temperature range t stg - 65 to + 150 c note : (1) measured at 1.0 mhz and applied reverse voltage of 4.0v dc page 1 of 1 rev. 00 : december 15, 2006 i fsm 80 a rating i o a 0.22 0.07 2.0 0.1 5.4 0.15 2.3 0.2 4.8 0.15 3.6 0.15 smb (do-214aa) 1.1 0.3 dimensions in millimeters certificate th97/10561qm certificate tw00/17276em
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