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| product specification www.jmnic.com silicon npn power transistors 2SD401A description ? ? with to-220c package ? complement to type 2sb546a ? collector current i c =2a ? collector-collector voltage : v ceo =150v(min) applications ? for use in general purpose power amplifier, vertical output application pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 150 v v ebo emitter-base voltage open collector 5 v i c collector current 2 a i cm collector current-peak 3 a p d total power dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol characteristics max unit r | jc thermal resistance junction to case 5.0 ?? /w jm nic
product specification www.jmnic.com jm nic silicon npn power transistors 2SD401A characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma; i b =0 150 v v (br)cbo collector-base breakdown voltage i c =0.5ma; i e =0 200 v v (br)ebo emitter-base breakdown votage i e =0.5ma; i b =0 5 v v cesat collector-emitter saturation voltage i c =500m a;i b =50m a 1.0 v i cbo collector cut-off current v cb =150v; i e =0 50 | a i ebo emitter cut-off current v eb =5v; i c =0 50 | a h fe dc current gain i c =0.4a ; v ce =10v 40 200 f t transition frequency i c =0.4a ; v ce =10v;f=1mhz 5 mhz h fe classifications m l k 40-80 60-120 100-200 product specification www.jmnic.com jmn ic silicon npn power transistors 2SD401A package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) |
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