analog power AM6968NE dual n-channel 20-v (d-s) mosfet v ds (v) i d (a) 6.8 5.8 4.7 symbol limit units v ds 20 product summary r ds(on) (m ) 20 26 @ v gs = 4.5v 35 @ v gs = 2.5v 46 @ v gs = 1.8v absolute maximum ratings (t a = 25c unless otherwise noted) v parameter drain-source voltage key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed typical applications: ? battery powered instruments ? portable computing ? mobile phones ? gps units and media players ? preliminary 1 publication order number: ds_AM6968NE_1a v ds 20 v gs 8 t a =25c 6.8 t a =70c 5.5 i dm 30 i s 2.2 a t a =25c 1.5 t a =70c 1 t j , t stg -55 to 150 c symbol maximum units 83 120 notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temp erature r ja i d a p d w maximum junction-to-ambient a continuous drain current a power dissipation a t <= 10 sec steady state gate-source voltage pulsed drain current b continuous source current (diode conduction) a thermal resistance ratings c/w parameter operating junction and storage temperature range v drain-source voltage ? preliminary 1 publication order number: ds_AM6968NE_1a
analog power AM6968NE parameter symbol test conditions min typ max unit gate-source threshold voltage v gs(th) v ds = v gs , id = 250 ua 0.4 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = 16 v, v gs = 0 v 1 v ds = 16 v, v gs = 0 v, t j = 55c 10 on-state drain current i d(on) v ds = 5 v, v gs = 4.5 v 25 a v gs = 4.5 v, i d = 5.0 a 26 v gs = 2.5 v, i d = 4.3 a 35 v gs = 1.8 v, i d = 3.5 a 46 forward transconductance g fs v ds = 10 v, i d = 5.0 a 25 s diode forward voltage v sd i s = 2.2 a, v gs = 0 v 0.7 v total gate charge q g 6.2 gate-source charge q gs 1.0 gate-drain charge q gd 1.9 turn-on delay time t d(on) 12 rise time t r 15 turn-off delay time t d(off) 56 fall time t f 17 input capacitance c iss 479 m v ds = 10 v, v gs = 4.5 v, id = 5.0 a drain-source on-resistance r ds(on) zero gate voltage drain current static ua electrical characteristics i dss dynamic ns nc v dd = 10 v, r l = 2.0 , i d = 5.0 a, v gen = 10 v, r gen = 6 ? preliminary 2 publication order number: ds_AM6968NE_1a input capacitance c iss 479 output capacitance c oss 72 reverse transfer capacitance c rss 58 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make chang es without further notice to any products herein. a pl makes no warranty, representation or guarantee regarding the suitability of its produ cts for any particular purpose, nor does apl assume any liability arising out of the application or us e of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typ ical? parameters which may be provided in apl data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typ icals? must be validated for each customer applicat ion by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, in tended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sust ain life, or for any other application in which the failure of the apl product could create a situation where p ersonal injury or death may occur. should buyer pur chase or use apl products for any such unintended or unauthorized application, buyer shall indemnify and hold apl and its officers, employees , subsidiaries, affiliates, and distributors harmle ss against all claims, costs, damages, and expenses, a nd reasonable attorney fees arising out of, directl y or indirectly, any claim of personal injury or de ath associated with such unintended or unauthorized use , even if such claim alleges that apl was negligent regarding the design or manufacture of the part. apl is an equal opportunity/affirmative action empl oyer. pf v ds = 10 v, v gs = 0 v, f =1 mhz ? preliminary 2 publication order number: ds_AM6968NE_1a
analog power AM6968NE 1. on-resistance vs. drain current 2. transfer characteristics typical electrical characteristics 0 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 10 rds(on) - on-resistance( ) id-drain current (a) 2.5v 1.8v 3.5v 4.5v 6v,8v 0.04 0.05 0.06 0.07 0.08 - resistance( ) tj = 25 c i d = 5.0a 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 id - drain current (a) vgs - gate-to-source voltage (v) tj = 25 c 1 10 source current (a) tj = 25 c ? preliminary 3 publication order number: ds_AM6968NE_1a 3. on-resistance vs. gate-to-source voltage 4. drain -to-source forward voltage 5. output characteristics 6. capacitance 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 id - drain current (a) vds - drain-to-source voltage (v) 8v,6v,4.5v,3.5v 1.8v 2.5v 1.5v 0 0.01 0.02 0.03 0.04 0 2 4 6 8 rds(on) - on - vgs - gate-to-source voltage (v) 0.01 0.1 1 0 0.3 0.6 0.9 1.2 1.5 is - source current (a) vsd - source-to-drain voltage (v) 0 100 200 300 400 500 600 700 800 900 0 5 10 15 20 capacitance (pf) vds-drain-to-source voltage (v) ciss coss crss f = 1mhz ? preliminary 3 publication order number: ds_AM6968NE_1a
analog power AM6968NE 7. gate charge typical electrical characteristics 8. normalized on-resistance vs junction temperature 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12 vgs-gate-to-source voltage (v) qg - total gate charge (nc) i d = 5.0a v ds = 10v 1 10 id current (a) 10 us 100 us 1 ms 10 ms 100 ms 20 25 30 35 40 peak transient power (w) 0.5 1 1.5 2 -50 -25 0 25 50 75 100 125 150 rds(on) - on-resistance( ) (normalized) tj -junctiontemperature(c) ? preliminary 4 publication order number: ds_AM6968NE_1a 9. safe operating area 10. single pulse maximum powe r dissipation 11. normalized thermal transient junction to ambien t 0.01 0.1 1 0.1 1 10 100 id current (a) vds drain to source voltage (v) 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0 5 10 15 20 0.001 0.01 0.1 1 10 100 peak transient power (w) t1 time (sec) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t1 time (sec) r ja (t) = r(t) + r ja r ja = 120 c /w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 d = 0.5 0.2 0.1 0.05 0.02 single pulse p(pk ) t 1 t 2 ? preliminary 4 publication order number: ds_AM6968NE_1a
analog power AM6968NE package information ? preliminary 5 publication order number: ds_AM6968NE_1a note: 1. all dimension are in mm. 2. package body sizes exclude mold flash, protrusion or gate burrs. mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side. 3. package body sizes determined at the outermost ex tremes of the plastic body exclusive of mold flash , tie bar burrs, gate burrs and interlead flash, but includin g any mismatch between the top and bottom of the pl astic body. 4. the package top may be smaller than the package b ottom. 5. dimension "b" does not include dambar protrusion. allowable dambar protrusion shall be 0.08 mm total in excess of "b" dimension at maximum material condition. the dambar cannot be located on the lower radius of the foot . ? preliminary 5 publication order number: ds_AM6968NE_1a
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