product information iso 9001 certified www.teledynewireless.com email: amplifiers@teledyne.com 1274 terra bella avenue, mountain view, ca 94043 ? tel: 800-832-6869 ? fax: (650) 962-6845 10/2001 17 TBQ-3018 TBQ-3018 TBQ-3018 TBQ-3018 TBQ-3018 14.0 to 14.5 ghz gaas mmic 14.0 to 14.5 ghz gaas mmic 14.0 to 14.5 ghz gaas mmic 14.0 to 14.5 ghz gaas mmic 14.0 to 14.5 ghz gaas mmic power amplifier for vsa power amplifier for vsa power amplifier for vsa power amplifier for vsa power amplifier for vsa t applications t applications t applications t applications t applications featur featur featur featur featur es es es es es ? ? ? ? ? +30 dbm output power at 1 db gain compression +30 dbm output power at 1 db gain compression +30 dbm output power at 1 db gain compression +30 dbm output power at 1 db gain compression +30 dbm output power at 1 db gain compression ? ? ? ? ? 35 db typical small signal gain 35 db typical small signal gain 35 db typical small signal gain 35 db typical small signal gain 35 db typical small signal gain ? ? ? ? ? 7 db typical noise figure 7 db typical noise figure 7 db typical noise figure 7 db typical noise figure 7 db typical noise figure ? ? ? ? ? thermally ef thermally ef thermally ef thermally ef thermally ef ficient copper ficient copper ficient copper ficient copper ficient copper -t -t -t -t -t ungsten package ungsten package ungsten package ungsten package ungsten package product description product description product description product description product description the TBQ-3018 is a four stage phemt gaas mmic amplifier that is ideally suited to ku-band vsat applications. the amplifier provides a minimum of 30 db gain and delivers high efficiency at 1 watt output power from 14.0 to 14.5 ghz. the small package provides a simple, cost effective solution to customized designs. the base material is gold plated copper-tungsten to provide excellent thermal dissipation. electrical specifications electrical specifications electrical specifications electrical specifications electrical specifications (t = + 25 (t = + 25 (t = + 25 (t = + 25 (t = + 25 o o o o o c, v c, v c, v c, v c, v d d d d d = 8v = 8v = 8v = 8v = 8v , v , v , v , v , v g g g g g = -0.1v to -1.5v = -0.1v to -1.5v = -0.1v to -1.5v = -0.1v to -1.5v = -0.1v to -1.5v , i , i , i , i , i d d d d d = 650ma) = 650ma) = 650ma) = 650ma) = 650ma) * i d = 500ma, typical parameter symbol min max typical units operating frequency f op 14 14.5 - ghz gain s 21 30 - 35 db input /output vsw r vsw r - - 3:1 - output power at 1 db gain compression* p -1db 30 - 31 dbm third order intercept ip3 - - 40 dbm noise figure nf - - 7 db gain variation over operating frequency ? s 21 -2 - db gain variation over operating frequency and temperature ? s 21 - - -0.06 db/ o c maximum ratings maximum ratings maximum ratings maximum ratings maximum ratings (t (t (t (t (t a a a a a = + 25 = + 25 = + 25 = + 25 = + 25 o o o o o c unless otherwise noted) c unless otherwise noted) c unless otherwise noted) c unless otherwise noted) c unless otherwise noted) rating symbol value unit dc drain supply voltage v dd 9v vdc dc gate supply voltage v gg -3v vdc rf input power p in +1 mw junction temperature t j +150 o c storage temperature t stg -40 to +110 o c
www.teledynewireless.com email: amplifiers@teledyne.com 1274 terra bella avenue, mountain view, ca 94043 ? tel: 800-832-6869 ? fax: (650) 962-6845 10/2001 18 pout @ 1 db 24 25 26 27 28 29 30 31 32 33 34 11 12 13 14 15 16 17 18 frequency (ghz) pout @ 1 db (dbm) pout @ 1 db pout@ 1 db vs frequency vs drain voltage 28 28.5 29 29.5 30 30.5 31 31.5 32 32.5 13.75 14 14.25 14.5 frequency pout @ 1db 5 volts 7 volts 8 volts drain current vs pout @ 1 db vs voltage 700 750 800 850 900 950 1000 1050 1100 21 24 27 30 33 power out @ 1 db drain current 5 volts 7 volts 8 volts 3rd order intercept point (f = 14 ghz) -50 -30 -10 10 30 50 -20 -10 0 10 input power ( dbm) output power (dbm) linear gain pin 3rd pout of amp typical ssg and input return loss vdd = 8.0v, id = 500 ma @+25c 25 27 29 31 33 35 37 14 14.1 14.2 14.3 14.4 14.5 frequency (ghz) gain -15 -13 -11 -9 -7 -5 return loss (db) gain return typical output power vdd=8.0v, id=650 ma @+25c 31 32 33 34 35 14 14.1 14.2 14.3 14 14.5 frequency (ghz) ouput power (dbm) p-1db psat TBQ-3018 TBQ-3018 TBQ-3018 TBQ-3018 TBQ-3018 14.0 to 14.5 ghz gaas mmic power amplifier for vsa 14.0 to 14.5 ghz gaas mmic power amplifier for vsa 14.0 to 14.5 ghz gaas mmic power amplifier for vsa 14.0 to 14.5 ghz gaas mmic power amplifier for vsa 14.0 to 14.5 ghz gaas mmic power amplifier for vsa t applications t applications t applications t applications t applications
product information iso 9001 certified www.teledynewireless.com email: amplifiers@teledyne.com 1274 terra bella avenue, mountain view, ca 94043 ? tel: 800-832-6869 ? fax: (650) 962-6845 10/2001 19 pout @ 1 db, g ain and id vs frequency 30. 5 31. 5 32. 5 33. 5 34. 5 35. 5 36. 5 37. 5 38. 5 13. 5 14 14. 25 14. 5 15 frequency pout ( dbm ) , gain ( db ) 800 820 840 860 880 900 920 940 960 980 1000 drain current p out @ 1db g ain id application information application information application information application information application information power amplifier biasing procedure power amplifier biasing procedure power amplifier biasing procedure power amplifier biasing procedure power amplifier biasing procedure caution: loss of gate voltage (vg) while drain voltage (vd) is present may damage the amplifier. this amplifier is an esd sensitive device. the following procedure must be followed for the amplifier to operate properly: 1. slowly apply gate voltage (typical vpinch-off= -1.5v) to terminal vg. 2. slowly apply drain voltage at vd (<+5 volts) and monitor drain current ids. adjust negative voltage vg to set the drain curre nt (ids) to approximately 600 ma. adjust the drain voltage vd to nominal +8 volts (adjust gate voltage vg, if needed, to maintain the drain current at ids. 3. after the bias condition is established, rf input signal may now be applied at the appropriate frequency band. 4. follow turn-off sequence: first, rf input power=off, next, vd=off, then, vg=off. device handling procedures device handling procedures device handling procedures device handling procedures device handling procedures 1. cleanliness: cleanliness: cleanliness: cleanliness: cleanliness: observe proper handling procedures to ensure clean devices and pcbs. devices should remain in their original packaging until component placement to ensure no contamination or damage to rf, dc & ground contact areas. 2. device cleaning: device cleaning: device cleaning: device cleaning: device cleaning: standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. 3. esd precautions to protect against esd damage: esd precautions to protect against esd damage: esd precautions to protect against esd damage: esd precautions to protect against esd damage: esd precautions to protect against esd damage: - a properly grounded static-dissipative surface on which to place devices. - static-dissipative floor or mat. - a properly grounded conductive wrist strap for each person to wear while handling devices. 4. general handling: general handling: general handling: general handling: general handling: handle the device along the edges with a sharp pair of bent tweezers. do not apply excessive pressure to the top of the lid. 5. device storage: devices should be stored in a dry nitrogen environment. TBQ-3018 TBQ-3018 TBQ-3018 TBQ-3018 TBQ-3018 14.0 to 14.5 ghz gaas mmic power amplifier for vsa 14.0 to 14.5 ghz gaas mmic power amplifier for vsa 14.0 to 14.5 ghz gaas mmic power amplifier for vsa 14.0 to 14.5 ghz gaas mmic power amplifier for vsa 14.0 to 14.5 ghz gaas mmic power amplifier for vsa t applications t applications t applications t applications t applications
www.teledynewireless.com email: amplifiers@teledyne.com 1274 terra bella avenue, mountain view, ca 94043 ? tel: 800-832-6869 ? fax: (650) 962-6845 10/2001 20 TBQ-3018 TBQ-3018 TBQ-3018 TBQ-3018 TBQ-3018 14.0 to 14.5 ghz gaas mmic power amplifier for vsa 14.0 to 14.5 ghz gaas mmic power amplifier for vsa 14.0 to 14.5 ghz gaas mmic power amplifier for vsa 14.0 to 14.5 ghz gaas mmic power amplifier for vsa 14.0 to 14.5 ghz gaas mmic power amplifier for vsa t applications t applications t applications t applications t applications v g : -0.1v to -1.0v pins 2, 4, 7, 9 nc package base gnd t t t t t ypical biasing configuration ypical biasing configuration ypical biasing configuration ypical biasing configuration ypical biasing configuration package outline package outline package outline package outline package outline teledyne reserves the right to make changes without further notice to any specification herein. ? typical ? parameters can and do vary. evaluation board evaluation board evaluation board evaluation board evaluation board notes notes notes notes notes 1. dual bias supply required. 2. dc supply sequencing or protection circuitry not included. see amplifier biasing procedure 3. a 360 pf dc supply line decoupling capacitor is included on both v d and v g lines. (see typical biasing configuration shown above). 4. the last fixture or circuit should incorporate additional bypass capacity (25ufd) on the drain and gate bias terminals to pre vent oscillations caused by feedback signals. 5. supply (drain and gate) wire/leads should be as short as possible. 6. close placement of external components to the power amplifier is essential for stability purposes. 7. tet recommends the unit be soldered to dc and rf ground for best results. 8. pin numbers indicated on outline drawing are for user information only. units are not labeled with pin numbers. 9. mask drawing for circuit board available on the teledyne wireless website at www.teledynewireless.com.
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