1 to-220f item symbol ratings unit drain-source voltage v ds 150 v dsx *5 130 continuous drain current i d 23 pulsed drain current i d(puls] 96 gate-source voltage v gs 20 repetitive or non-repetitive i ar *2 23 maximum avalanche energy e as *1 242 maximum drain-source dv/dt dv ds /dt *4 20 peak diode recovery dv/dt dv/dt *3 5 max. power dissipation p d ta=25 c 2.1 tc=25 c 40 operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2SK3537-01MR fuji power mosfet n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =150v v gs =0v v ds =120v v gs =0v v gs =20v i d =6a i d =11.5a v ds =25v v cc =48v i d =11.5a v gs =10v r gs =10 ? min. typ. max. units v v a na m ? s pf nc a v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 3.125 58.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d =250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =75v v gs =0v f=1mhz v cc =48v i d =23a v gs =10v l=100 h t ch =25c i f =23a v gs =0v t ch =25c i f =23a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj kv/s kv/s w c c 150 3.0 5.0 25 250 10 100 65 90 60 81 54 70 12 24 1900 2850 200 300 17 26 10 15 15 23 80 120 15 23 46 70 812 12.5 19 23 1.10 1.65 0.13 0.6 -55 to +150 outline drawings *1 l=0.67mh, vcc=48v *2 tch=150c < *3 i f =-i d , -di/dt=50a/s, vcc=bv dss , tch=150c < << equivalent circuit schematic gate(g) source(s) drain(d) super f ap-g series *4 v ds 150v *5 v gs =-20v = < v gs =4v v gs =5v v gs =10v
2 characteristics 2SK3537-01MR fuji power mosfet id=f(vgs):80s pulse test, vds=25v,tch=25c id=f(vds):80s pulse test,tch=25c gfs=f(id):80s pulse test, vds=25v,tch=25c rds(on)=f(id):80s pulse test, tch=25c 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45 50 allowable power dissipation pd=f(tc) pd [w] tc [ c] 0 25 50 75 100 125 150 0 50 100 150 200 250 300 eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starting tch):vcc=48v,i(av)<=23a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 35 40 45 50 55 4.5v 20v 10v 8v 5.0v 4.0v id [a] vds [v] typical output characteristics vgs=3.5v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance 0 1020304050 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 8v rds(on) [ ? ] id [a] typical drain-source on-state resistance 10v 20v 5.0v 4.5v 4.0v vgs=3.5v
3 2SK3537-01MR fuji power mosfet vgs=f(qg):id=23a, tch=25c if=f(vsd):80s pulse test,tch=25c t=f(id):vcc=48v, vgs=10v, rg=10 ? -50 -25 0 25 50 75 100 125 150 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 rds(on) [ ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=11.5a,vgs=10v -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=1ma vgs(th) [v] tch [ c] 0 102030405060708090100 0 2 4 6 8 10 12 14 16 18 20 22 24 qg [nc] typical gate charge characteristics vgs [v] vcc= 48v 10 -1 10 0 10 1 10 2 10 3 1p 10p 100p 1n 10n c [f] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.1 1 10 100 vgs=10v vgs=0v if [a] vsd [v] typical forward characteristics of reverse diode 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id td(on) tr tf td(off) t [ns] ?"$
4 2SK3537-01MR fuji power mosfet i av =f(t av ):starting tch=25c. vcc=48v avalanche current i av [a] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 transient thermal impedance zth(ch-c)=f(t) parameter:d=t/t zth(ch-c) [k/w] t [s] 0.5 0.2 0.02 0.05 0.1 0.01 0 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth t av [sec]
|
