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not recommended for new design not recommended for new design mmg3001nt1 1 rf device data freescale semiconductor, inc. mmg3001nt1 40--3600 mhz, 20 db 18.5 dbm ingap hbt heterojunction bipolar transistor technology (ingap hbt) broadband high linearity amplifier the mmg3001nt1 is a general purpose amplifier that is internally input and output matched. it is designed for a broad range of class a, small--signal, high linearity, general pur pose applications. it is suitable for applications with frequencies from 40 to 3600 mhz such as cellular, pcs, bwa, wll, phs, catv, vhf, uhf, umts and general small--signal rf. features ? frequency: 40--3600 mhz ? p1db: 18.5 dbm @ 900 mhz ? small--signal gain: 20 db @ 900 mhz ? third order output intercept point: 32 dbm @ 900 mhz ? single voltage supply ? internally matched to 50 ohms ? cost--effective sot--89 surface mount package ? in tape and reel. t1 suffix = 1000 units, 12 mm tape width, 7 inch reel. case 1514--02, style 1 sot--89 plastic 1 2 3 table 1. typical performance (1) characteristic symbol 900 mhz 2140 mhz 3500 mhz unit small--signal gain (s21) g p 20 18 16 db input return loss (s11) irl -- 2 5 -- 2 5 -- 1 9 db output return loss (s22) orl -- 2 2 -- 1 8 -- 1 7 db power output @1db compression p1db 18.5 18 15.5 dbm third order output intercept point oip3 32 31 28.5 dbm 1. v cc =5.6vdc,t a =25 c, 50 ohm system. table 2. maximum ratings rating symbol value unit supply voltage v cc 7 v supply current i cc 300 ma rf input power p in 10 dbm storage temperature range t stg --65 to +150 c junction temperature (2) t j 150 c 2. for reliable operation, the j unction temperature should not exceed 150 c. table 3. thermal characteristics characteristic symbol value (3) unit thermal resistance, junction to case case temperature 123 c, 5.6 vdc, 58 ma, no rf applied r jc 92.0 c/w 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mmg3001nt1 rev. 8, 2/2012 freescale semiconductor technical data ? freescale semiconductor, inc., 2004--2008, 2012. a ll rights reserved.
not recommended for new design not recommended for new design 2 rf device data freescale semiconductor, inc. mmg3001nt1 table 4. electrical characteristics (v cc = 5.6 vdc, 900 mhz, t a =25 c, 50 ohm system, in freescale application circuit) characteristic symbol min typ max unit small--signal gain (s21) g p 18 20 ? db input return loss (s11) irl ? -- 2 5 ? db output return loss (s22) orl ? -- 2 2 ? db power output @ 1db compression p1db ? 18.5 ? dbm third order output intercept point oip3 ? 32 ? dbm noise figure nf ? 4.1 ? db supply current (1) i cc 40 58 75 ma supply voltage (1) v cc ? 5.6 ? v 1. for reliable operation, the juncti on temperature should not exceed 150 c.
not recommended for new design not recommended for new design mmg3001nt1 3 rf device data freescale semiconductor, inc. table 5. functional pin description pin number pin function 1 rf in 2 ground 3 rf out /dc supply table 6. esd protection characteristics test conditions/test methodology class human body model (per jesd 22--a114) 0 machine model (per eia/jesd 22--a115) a charge device model (per jesd 22--c101) iv table 7. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22--a113, ipc/jedec j--std--020 1 260 c figure 1. functional diagram 3 2 1 2
not recommended for new design not recommended for new design 4 rf device data freescale semiconductor, inc. mmg3001nt1 50 ohm typical characteristics 10 25 0 t c =85 c f, frequency (ghz) figure 2. small--signal gain (s21) versus frequency v cc =5.6vdc 20 15 1234 g p , small--signal gain (db) 25 c -- 4 0 c 4 -- 4 0 0 0 s22 f, frequency (ghz) figure 3. input/output return loss versus frequency v cc =5.6vdc s11 -- 1 0 -- 2 0 -- 3 0 123 s11, s22 (db) 20 9 23 10 p out , output power (dbm) figure 4. small--signal gain versus output power 21 19 17 15 13 12 14 16 g p , small--signal gain (db) 1960 mhz 900 mhz 11 18 3500 mhz 2140 mhz 3.5 3 2.5 2 1.5 1 0.5 14 21 20 19 17 15 f, frequency (ghz) figure 5. p1db versus frequency p1db, 1 db compression point (dbm) 18 16 5.7 0 100 4.9 v cc , collector voltage (v) figure 6. collector current versus collector voltage 80 60 20 55.45.5 i cc , collector current (ma) 40 5.1 5.2 5.3 5.6 4 18 33 0 f, frequency (ghz) figure 7. third order output intercept point versus frequency 30 27 24 21 123 v cc =5.6vdc 100 khz tone spacing oip3, third order output intercept point (dbm) 2600 mhz v cc =5.6vdc v cc =5.6vdc
not recommended for new design not recommended for new design mmg3001nt1 5 rf device data freescale semiconductor, inc. 50 ohm typical characteristics 21 36 5.5 v cc , collector voltage (v) figure 8. third order output intercept point versus collector voltage 33 30 27 24 oip3, third order output intercept point (dbm) 5.55 5.6 5.7 5.65 f = 900 mhz 100 khz tone spacing 100 -- 4 0 -- 2 0 0 2 0 4 0 6 0 8 0 30 36 t, temperature ( _ c) figure 9. third order output intercept point versus case temperature 35 34 33 32 oip3, third order output intercept point (dbm) 31 figure 10. third order intermodulation distortion versus output power p out , output power (dbm) imd, third order intermodulation d istortion (dbc) 18 036912 -- 8 0 -- 3 0 -- 5 0 -- 6 0 -- 7 0 -- 4 0 15 150 10 3 10 5 120 figure 11. mttf versus junction temperature 10 4 125 130 135 140 145 t j , junction temperature ( c) note: the mttf is calculated with v cc =5.6vdc,i cc =58ma mttf (years) 4 0 8 0 f, frequency (ghz) figure 12. noise figure versus frequency 6 4 2 123 nf, noise figure (db) 0.5 1.5 2.5 3.5 14 -- 7 0 -- 2 0 0 p out , output power (dbm) figure 13. single--carrier w--cdma adjacent channel power ratio versus output power -- 3 0 -- 4 0 -- 5 0 -- 6 0 8 6 4 2 acpr, adjacent channel power ratio (dbc) 10 12 v cc =5.6vdc f = 900 mhz 100 khz tone spacing 8 vdc supply with 43 dropping resistor v cc =5.6vdc v cc =5.6vdc f = 900 mhz 100 khz tone spacing v cc = 5.6 vdc, f = 2140 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 8.5 d b @ 0.01% pr obabilit y( ccdf)
not recommended for new design not recommended for new design 6 rf device data freescale semiconductor, inc. mmg3001nt1 50 ohm application circuit: 40--800 mhz figure 14. 50 ohm test circuit schematic rf output rf input v supply c3 c4 z1 z2 c1 z5 c2 r1 l1 v cc z4 z3 dut figure 15. s21, s11 and s22 versus frequency -- 4 0 30 0 f, frequency (mhz) s22 200 400 600 800 20 10 0 -- 1 0 -- 2 0 -- 3 0 figure 16. 50 ohm test circuit component layout c1 l1 c2 r1 c4 c3 z1, z5 0.347 x 0.058 microstrip z2 0.575 x 0.058 microstrip z3 0.172 x 0.058 microstrip z4 0.403 x 0.058 microstrip pcb getek grade ml200c, 0.031 , r =4.1 s21, s11, s22 (db) s21 s11 c5 c5 mmg30xx rev 2 v cc =5.6vdc table 8. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2, c3 0.01 f chip capacitors c0603c103j5rac kemet c4 1000 pf chip capacitor c0603c102j5rac kemet c5 47 pf chip capacitor c0805c470j5rac kemet l1 470 nh chip inductor bk2125hm471--t taiyo yuden r1 8.2 chip resistor rk73b2atte8r2j koa speer table 9. supply voltage versus r1 values supply voltage 6 7 8 9 10 11 12 v r1 value 6.9 24 41 59 76 93 110 ? note: to provide v cc = 5.6 vdc and i cc = 58 ma at the device.
not recommended for new design not recommended for new design mmg3001nt1 7 rf device data freescale semiconductor, inc. 50 ohm application circuit: 800--3600 mhz c1 l1 c2 r1 c4 c3 c5 3300 800 1300 3800 figure 17. 50 ohm test circuit schematic figure 18. s21, s11 and s22 versus frequency f, frequency (mhz) figure 19. 50 ohm test circuit component layout -- 3 0 20 s22 10 0 -- 1 0 -- 2 0 s21, s11, s22 (db) s21 s11 rf output rf input v supply c3 c4 z1 z2 c1 z5 c2 r1 l1 v cc z4 z3 dut z1, z5 0.347 x 0.058 microstrip z2 0.575 x 0.058 microstrip z3 0.172 x 0.058 microstrip z4 0.403 x 0.058 microstrip pcb getek grade ml200c, 0.031 , r =4.1 c5 1800 2300 2800 mmg30xx rev 2 v cc =5.6vdc table 10. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2 39 pf chip capacitors c0805c390j5rac kemet c3 0.01 f chip capacitor c0603c103j5rac kemet c4 1000 pf chip capacitor c0603c102j5rac kemet c5 47 pf chip capacitor c0805c470j5rac kemet l1 56 nh chip inductor hk160856nj--t taiyo yuden r1 8.2 chip resistor rk73b2atte8r2j koa speer
not recommended for new design not recommended for new design 8 rf device data freescale semiconductor, inc. mmg3001nt1 50 ohm typical characteristics table 11. common emitter s--parameters (v cc =5.6vdc,t a =25 c, 50 ohm system) f mhz s 11 s 21 s 12 s 22 |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 100 0.01837 0.158 10.80154 176.164 0.06918 0.196 0.04789 11.134 150 0.00937 --92.445 10.61985 173.508 0.06785 --0.796 0.05071 --49.334 200 0.02263 96.518 11.06276 170.083 0.07095 --2.253 0.07322 --17.196 250 0.02049 101.715 10.97614 167.952 0.07046 --2.513 0.06689 --28.31 300 0.02015 91.299 10.93416 165.552 0.07052 --2.899 0.07111 --35.935 350 0.01939 77.961 10.89886 163.145 0.07044 --3.499 0.07696 --41.106 400 0.0212 71.36 10.85777 160.903 0.07055 --3.885 0.08093 --47.831 450 0.02169 63.516 10.81348 158.599 0.07053 --4.455 0.08609 --52.772 500 0.02447 55.112 10.76682 156.269 0.07056 --4.766 0.09084 --57.016 550 0.02643 49.889 10.71841 154.026 0.07058 --5.297 0.09479 --60.897 600 0.02857 47.303 10.67367 151.767 0.07057 --5.783 0.09752 --65.139 650 0.03094 43.937 10.61782 149.477 0.07066 --6.195 0.1016 --69.112 700 0.03356 42.055 10.56473 147.215 0.07064 --6.702 0.10489 --72.747 750 0.03495 40.001 10.50489 144.98 0.07073 --7.082 0.10746 --76.469 800 0.03599 38.298 10.44613 142.748 0.07084 --7.625 0.11046 --80.336 850 0.03675 36.713 10.38955 140.536 0.07089 --8.108 0.11345 --84.309 900 0.0378 34.449 10.32195 138.333 0.07106 --8.539 0.11524 --88.629 950 0.04014 35.697 10.26867 136.075 0.07101 --8.95 0.11712 --93.045 1000 0.03975 34.93 10.19351 133.939 0.07128 --9.497 0.11971 --97.401 1050 0.04101 35.048 10.13374 131.742 0.07142 --10.015 0.12057 --101.389 1100 0.0413 34.972 10.05555 129.606 0.07148 --10.588 0.12293 --106.494 1150 0.04078 36.31 9.98381 127.42 0.07156 --10.989 0.12475 --111.339 1200 0.04045 38.732 9.90685 125.299 0.07171 -- 1 1 . 5 1 0.12702 --115.996 1250 0.04005 39.914 9.83535 123.178 0.07179 --12.025 0.12882 --120.553 1300 0.03952 43.011 9.76304 121.077 0.07197 --12.554 0.13202 --125.245 1350 0.03786 44.538 9.68157 118.951 0.07208 --13.057 0.13502 --129.596 1400 0.03796 46.354 9.60628 116.874 0.07224 --13.606 0.13836 --133.849 1450 0.03675 48.792 9.52474 114.777 0.07243 --14.151 0.14227 --138.332 1500 0.03229 27.259 9.45514 112.739 0.07269 --14.685 0.13499 --140.027 1550 0.03309 25.231 9.36984 110.697 0.0728 --15.204 0.13808 --143.203 1600 0.03475 23.271 9.29518 108.724 0.07296 --15.823 0.14111 --146.041 1650 0.0367 22.494 9.2159 106.764 0.07327 --16.372 0.14376 --149.267 1700 0.03803 21.485 9.15729 104.763 0.07341 --16.955 0.14728 --152.506 1750 0.03976 21.793 9.07502 102.811 0.07361 --17.538 0.14882 --155.031 1800 0.04035 21.332 9.00137 100.821 0.07373 --18.047 0.15301 --157.889 1850 0.04093 21.941 8.92666 98.873 0.07383 --18.59 0.15553 --160.786 1900 0.0409 20.661 8.84934 96.931 0.07407 --19.216 0.1587 --163.24 1950 0.04127 17.824 8.75854 95.008 0.07433 --19.75 0.1617 --165.666 2000 0.04055 20.129 8.69148 93.046 0.07451 --20.324 0.1659 --168.355 2050 0.04148 18.841 8.6161 91.185 0.07482 --20.966 0.16929 --170.838 2100 0.04198 18.596 8.5446 89.293 0.07498 --21.435 0.17351 --173.6 2150 0.04249 18.599 8.47505 87.398 0.07512 --22.217 0.17715 --176.054 2200 0.04309 19.388 8.39794 85.501 0.07543 --22.79 0.18032 --178.865 2250 0.04316 19.789 8.32788 83.624 0.0756 --23.41 0.18422 178.51 (continued)
not recommended for new design not recommended for new design mmg3001nt1 9 rf device data freescale semiconductor, inc. 50 ohm typical characteristics table 11. common emitter s--parameters (v cc =5.6vdc,t a =25 c, 50 ohm system) (continued) f mhz s 11 s 21 s 12 s 22 |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 2300 0.04326 21.542 8.24837 81.777 0.07591 --24.034 0.1871 175.803 2350 0.04285 23.93 8.17883 79.926 0.0761 --24.632 0.19081 173.166 2400 0.0428 25.661 8.10402 78.094 0.07638 --25.226 0.19358 170.371 2450 0.04222 28.349 8.0349 76.296 0.07665 --25.841 0.19769 167.872 2500 0.04157 30.594 7.96381 74.438 0.07693 --26.474 0.20079 164.997 2550 0.04062 32.718 7.89112 72.648 0.07715 --27.199 0.20422 162.204 2600 0.04117 35.498 7.83503 70.815 0.07744 --27.904 0.20869 159.371 2650 0.0407 39.668 7.76263 69.011 0.07768 --28.528 0.21293 156.39 2700 0.04099 40.736 7.68838 67.13 0.07806 --29.281 0.21614 153.567 2750 0.04248 44.129 7.62088 65.378 0.07826 --29.943 0.22114 150.373 2800 0.04329 47.509 7.55264 63.561 0.0785 --30.741 0.226 147.517 2850 0.04466 51.043 7.48275 61.767 0.07867 --31.392 0.23048 144.417 2900 0.04661 53.041 7.41535 60.019 0.07893 --32.182 0.23581 141.675 2950 0.04876 57.415 7.34593 58.235 0.07915 --32.903 0.24106 138.661 3000 0.04991 59.701 7.28251 56.493 0.07945 --33.641 0.24698 136.002 3050 0.05208 61.593 7.21536 54.703 0.07976 --34.4 0.25213 133.272 3100 0.05426 64.102 7.1502 52.913 0.07989 --35.181 0.25854 130.712 3150 0.05536 65.235 7.08162 51.15 0.08017 --35.962 0.26426 128.119 3200 0.05758 65.884 7.01653 49.405 0.08027 --36.771 0.27078 125.669 3250 0.06021 66.564 6.94732 47.655 0.08054 --37.539 0.27729 123.284 3300 0.06243 66.702 6.88222 45.916 0.08071 --38.36 0.28468 120.844 3350 0.06498 65.787 6.81808 44.235 0.08097 --39.051 0.29005 118.633 3400 0.06832 65.869 6.75612 42.521 0.08112 --39.867 0.29718 116.391 3450 0.07049 65.731 6.69433 40.809 0.08128 --40.621 0.3026 114.187 3500 0.07294 65.097 6.63494 39.085 0.08144 --41.453 0.30819 112.291 3550 0.07565 65.299 6.57111 37.382 0.08171 --42.369 0.31389 110.431 3600 0.07682 64.978 6.51018 35.707 0.08186 --43.091 0.31878 108.662
not recommended for new design not recommended for new design 10 rf device data freescale semiconductor, inc. mmg3001nt1 1.7 5.33 3.48 0.58 1.27 0.86 3.86 0.64 7.62 2.49 2.54 1.27 0.305 diameter figure 20. recommended mounting configuration notes: 1. thermal and rf grounding considerations should be used in pcb layout design. 2. depending on pcb design rules, as many vias as possible should be placed on the landing pattern. 3. if vias cannot be placed on the landing pattern, then as many vias as possible should be placed as close to the landing pattern as possible for optimal thermal and rf performance. 4. recommended via pattern shown has 0.381 x 0.762 mm pitch. recommended solder stencil
not recommended for new design not recommended for new design mmg3001nt1 11 rf device data freescale semiconductor, inc. package dimensions
not recommended for new design not recommended for new design 12 rf device data freescale semiconductor, inc. mmg3001nt1
not recommended for new design not recommended for new design mmg3001nt1 13 rf device data freescale semiconductor, inc.
not recommended for new design not recommended for new design 14 rf device data freescale semiconductor, inc. mmg3001nt1 product documentation and software refer to the following documents and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers ? an3100: general purpose amplifier and mmic biasing software ? .s2p file for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 5 mar. 2007 ? corrected and updated part numbers in tables 8 and 10, component designations and values, to rohs compliant part numbers, p. 6, 7 6 july 2007 ? replaced case outline 1514--01 with 1514--02, issue d, p. 1, 11--13. case updated to add missing dimension for pin 1 and pin 3. 7 mar. 2008 ? removed footnote 2, continuous voltage and current applied to device, from table 2, maximum ratings, p. 1 ? corrected fig. 13, single--carrier w--cdma adjacent channel power ratio versus output power y--axis (acpr) unit of measure to dbc, p. 5 ? corrected s--parameter table frequency column label to read ?mhz? versus ?ghz? and corrected frequency values from ghz to mhz, p. 8, 9 8 feb. 2012 ? corrected temperature at which thetajc is measured from 25 c to 123 c and added ?no rf applied? to thermal characteristics table to indicate that ther mal characterization is performed under dc test with no rf signal applied, p. 1 ? table 6, esd protection characte rization, removed the word ?minimum? after the esd class rating. esd ratings are characterized during new product dev elopment but are not 100% tested during production. esd ratings provided in the data sheet are intended to be used as a guideline when handling esd sensitive devices, p. 3 ? removed i cc bias callout from applicable graphs and table 1 1, common emitter s--parameters heading as bias is not a controlled value, p. 4--9 ? added .s2p file availability to product software, p. 14
not recommended for new design not recommended for new design mmg3001nt1 15 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2004--2008, 2012. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mmg3001nt1 rev. 8, 2/2012

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