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| savantic semiconductor product specification silicon pnp power transistors 2SB1021 d escription with to-220fa package high dc current gain low saturation voltage complement to type 2sd1416 applications high power switching applications hammer drive,pulse motor drive applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector -emitter voltage open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -7 a i b base current -0.2 a t a =25 2.0 p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1021 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma; i b =0 -80 v v cesat-1 collector-emitter saturation voltage i c =-3a ;i b =-6ma -1.5 v v cesat-2 collector-emitter saturation voltage i c =-7a ;i b =-14ma -2.0 v v besat base-emitter saturation voltage i c =-3a ;i b =-6ma -2.5 v i cbo collector cut-off current v cb =-80v; i e =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -4.0 ma h fe-1 dc current gain i c =-3a ; v ce =-3v 2000 15000 h fe-2 dc current gain i c =-7a ; v ce =-3v 1000 switching times t on turn-on time 0.8 s t stg storage time 2.0 s t f fall time i b1 =-i b2 =-6ma; v cc > -45v r l =15 ? 2.5 s savantic semiconductor product specification 3 silicon pnp power transistors 2SB1021 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) |
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