d a t a sh eet product speci?cation supersedes data of 1998 may 19 1999 may 25 discrete semiconductors pdta144wu pnp resistor-equipped transistor b ook, halfpage m3d102
1999 may 25 2 philips semiconductors product speci?cation pnp resistor-equipped transistor pdta144wu features built-in bias resistors r1 and r2 (typ. 47 k w and 22 k w respectively) simplification of circuit design reduces number of components and board space. applications especially suitable for space reduction in interface and driver circuits inverter circuit configurations without use of external resistors. description pnp resistor-equipped transistor in a sc-70 (sot323) plastic package. npn complement: pdtc144wu. pinning pin description 1 base/input 2 emitter/ground (+) 3 collector/output fig.1 simplified outline (sc-70; sot323) and symbol. k, 4 columns mam135 r1 r2 3 2 1 3 2 1 top view fig.2 equivalent inverter symbol. mga893 - 1 1 3 2 marking note 1. * = - : made in hong kong. * = t : made in malaysia. type number marking code (1) pdta144wu * 28
1999 may 25 3 philips semiconductors product speci?cation pnp resistor-equipped transistor pdta144wu limiting values in accordance with the absolute maximum rating system (iec 134). note 1. transistor mounted on an fr4 printed-circuit board. thermal characteristics note 1. transistor mounted on an fr4 printed-circuit board. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter -- 50 v v ceo collector-emitter voltage open base -- 50 v v ebo emitter-base voltage open collector -- 10 v v i input voltage positive - +10 v negative -- 40 v i o output current (dc) -- 100 ma i cm peak collector current -- 100 ma p tot total power dissipation t amb 25 c; note 1 - 200 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient note 1 625 k/w symbol parameter conditions min. typ. max. unit i cbo collector cut-off current i e = 0; v cb = - 50 v --- 100 na i ceo collector cut-off current i b = 0; v ce = - 30 v --- 1 m a i b = 0; v ce = - 30 v; t j = 150 c --- 50 m a i ebo emitter cut-off current i c = 0; v eb = - 5v --- 110 m a h fe dc current gain i c = - 5 ma; v ce = - 5v 60 -- v cesat collector-emitter saturation voltage i c = - 10 ma; i b = - 0.5 ma --- 150 mv v i(off) input-off voltage i c = - 100 m a; v ce = - 5v -- 1.7 - 1.2 v v i(on) input-on voltage i c = - 2 ma; v ce = - 0.3 v - 4 - 2.7 - v r1 input resistor 33 47 61 k w resistor ratio 0.37 0.47 0.57 c c collector capacitance i e =i e = 0; v cb = - 10 v; f = 1 mhz -- 3pf r2 r1 ------- -
1999 may 25 4 philips semiconductors product speci?cation pnp resistor-equipped transistor pdta144wu fig.3 dc current gain as a function of collector current; typical values. v ce = - 5v. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 40 c. handbook, halfpage mbk806 - 10 - 1 - 1 - 10 - 10 2 i c (ma) h fe 10 3 10 10 2 1 (1) (2) (3) fig.4 collector-emitter saturation voltage as a function of collector current; typical values. i c /i b = 20. (1) t amb = 100 c. (2) t amb =25 c. (3) t amb = - 40 c. handbook, halfpage - 10 2 mbk805 - 10 v cesat (mv) (2) (3) (1) - 10 - 1 - 1 - 10 - 10 2 i c (ma) fig.5 input-off voltage as a function of collector current; typical values. v ce = - 5v. (1) t amb = - 40 c. (2) t amb =25 c. (3) t amb = 100 c. handbook, halfpage - 10 (2) (3) (1) - 1 - 10 - 1 mbk808 - 10 - 2 - 10 - 1 - 1 - 10 i c (ma) v i(off) (v) fig.6 input-on voltage as a function of collector current; typical values. v ce = - 0.3 v. (1) t amb = - 40 c. (2) t amb =25 c. (3) t amb = 100 c. handbook, halfpage - 10 2 - 1 - 10 - 10 - 1 mbk807 - 10 - 1 - 1 - 10 - 10 2 i c (ma) v i(on) (v) (1) (2) (3)
1999 may 25 5 philips semiconductors product speci?cation pnp resistor-equipped transistor pdta144wu package outline unit a 1 max b p cd e e 1 h e l p qw v references outline version european projection issue date iec jedec eiaj mm 0.1 1.1 0.8 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 0.65 e 1.3 2.2 2.0 0.23 0.13 0.2 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot323 sc-70 w m b p d e 1 e a b a 1 l p q detail x c h e e v m a a b y 0 1 2 mm scale a x 12 3 plastic surface mounted package; 3 leads sot323 97-02-28
1999 may 25 6 philips semiconductors product speci?cation pnp resistor-equipped transistor pdta144wu definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1999 may 25 7 philips semiconductors product speci?cation pnp resistor-equipped transistor pdta144wu notes
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