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d a t a sh eet product speci?cation supersedes data of november 1992 file under discrete semiconductors, sc14 february 1995 discrete semiconductors philips semiconductors bft93w pnp 4 ghz wideband transistor
february 1995 2 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w features high power gain gold metallization ensures excellent reliability sot323 (s-mini) package. applications it is intended as a general purpose transistor for wideband applications up to 2 ghz. description silicon pnp transistor in a plastic, sot323 (s-mini) package. the bft93w uses the same crystal as the sot23 version, bft93. pinning pin description 1 base 2 emitter 3 collector bft93w marking code: x1. fig.1 sot323. handbook, 2 columns 3 1 2 mbc870 top view quick reference data note 1. t s is the temperature at the soldering point of the collector pin. symbol parameter conditions min. typ. max. unit v cbo collector-base voltage open emitter - - - 15 v v ceo collector-emitter voltage open base - - - 12 v i c collector current (dc) - - - 50 ma p tot total power dissipation up to t s = 93 c; note 1 - - 300 mw h fe dc current gain i c = - 30 ma; v ce = - 5 v 20 50 - c re feedback capacitance i c = 0; v ce = - 5 v; f = 1 mhz - 1 - pf f t transition frequency i c = - 30 ma; v ce = - 5 v; f = 500 mhz - 4 - ghz g um maximum unilateral power gain i c = - 30 ma; v ce = - 5 v; f = 500 mhz; t amb = 25 c - 15.5 - db f noise ?gure i c = - 10 ma; v ce = - 5 v; f = 500 mhz - 2.4 - db t j junction temperature - - 150 c
february 1995 3 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w limiting values in accordance with the absolute maximum rating system (iec 134). thermal characteristics note to the limiting values and thermal characteristics 1. t s is the temperature at the soldering point of the collector pin. characteristics t j = 25 c (unless otherwise speci?ed). note 1. g um is the maximum unilateral power gain, assuming s 12 is zero. symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - - 15 v v ceo collector-emitter voltage open base - - 12 v v ebo emitter-base voltage open collector - - 2 v i c collector current (dc) - - 50 ma p tot total power dissipation up to t s = 93 c; note 1 - 300 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c symbol parameter conditions value unit r th j-s thermal resistance from junction to soldering point up to t s = 93 c; note 1 190 k/w symbol parameter conditions min. typ. max. unit i cbo collector cut-off current i e = 0; v cb = - 5 v - - - 50 na h fe dc current gain i c = - 30 ma; v ce = - 5 v 20 50 - f t transition frequency i c = - 30 ma; v ce = - 5 v; f = 500 mhz; t amb = 25 c - 4 - ghz c c collector capacitance i e = i e = 0; v cb = - 5 v; f = 1 mhz - 1.2 - pf c e emitter capacitance i c = i c = 0; v eb = - 0.5 v; f = 1 mhz - 1.4 - pf c re feedback capacitance i c = 0; v ce = - 5 v; f = 1 mhz - 1 - pf g um maximum unilateral power gain; note 1 i c = - 30 ma; v ce = - 5 v; f = 500 mhz; t amb = 25 c - 15.5 - db i c = - 30 ma; v ce = - 5 v; f = 1 ghz; t amb = 25 c - 10 - db f noise ?gure g s = g opt ; i c = - 10 ma; v ce = - 5 v; f = 500 mhz - 2.4 - db g s = g opt ; i c = - 10 ma; v ce = - 5 v; f = 1 ghz - 3 - db g um 10 s 21 2 1 s 11 2 C ( ) 1 s 22 2 C ( ) ------------------------------------------------------------ db. log =
february 1995 4 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w fig.2 power derating as a function of the soldering point temperature. 0 50 100 200 200 0 mlb424 150 t ( c) o s p tot (mw) 300 400 100 fig.3 dc current gain as a function of collector current, typical values. v ce = - 5 v; t j = 25 c. 0 60 40 20 0 10 20 40 mlb425 30 i (ma) c fe h fig.4 feedback capacitance as a function of collector-base voltage, typical values. i c = 0; f = 1 mhz. 0 2 0 20 mlb426 4 8 v (v) cb c re (pf) 1.6 1.2 0.8 0.4 12 16 fig.5 transition frequency as a function of collector current, typical values. f = 500 mhz; t amb = 25 c. 4 2 0 mlb427 6 f (ghz) 10 2 10 1 t i (ma) c v = ce 10 v 5 v
february 1995 5 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w fig.6 gain as a function of collector current, typical values. v ce = - 5 v; f = 500 mhz. 0 30 20 10 0 10 20 40 mlb428 30 gain (db) i (ma) c g msg um fig.7 gain as a function of collector current, typical values. v ce = - 5 v; f = 1 ghz. 0 30 20 10 0 10 20 40 mlb429 30 gain (db) i (ma) c msg g um fig.8 gain as a function of frequency, typical values. v ce = - 5 v; i c = - 10 ma. 50 0 10 mlb430 10 2 10 3 10 4 10 20 30 40 gain (db) f (mhz) g um msg g max fig.9 gain as a function of frequency, typical values. v ce = - 5 v; i c = - 30 ma. 50 0 10 mlb431 10 2 10 3 10 4 10 20 30 40 gain (db) f (mhz) g um msg g max
february 1995 6 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w v ce = - 10 v; i c = - 30 ma. fig.10 common emitter input reflection coefficient (s 11 ), typical values. mlb434 0 0 o 0.2 0.6 0.4 0.8 1.0 1.0 45 o 90 o 135 o 180 o 45 o 90 o 135 o 5 2 1 0.5 0.2 0 0.2 0.5 1 2 5 0.2 0.5 1 2 5 3 ghz 40 mhz v ce = - 10 v; i c = - 30 ma. fig.11 common emitter forward transmission coefficient (s 21 ), typical values. mlb435 0 o 90 o 135 o 180 o 90 o 50 40 30 20 10 45 o 135 o 45 o 3 ghz 40 mhz
february 1995 7 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w v ce = - 10 v; i c = - 30 ma. fig.12 common emitter reverse transmission coefficient (s 12 ), typical values. mlb436 0 o 90 o 135 o 180 o 90 o 0.5 0.4 0.3 0.2 0.1 45 o 135 o 45 o 40 mhz 3 ghz fig.13 common emitter output reflection coefficient (s 22 ), typical values. v ce = - 10 v; i c = - 30 ma. mlb437 0 0 o 0.2 0.6 0.4 0.8 1.0 1.0 45 o 90 o 135 o 180 o 45 o 90 o 135 o 5 2 1 0.5 0.2 0 0.2 0.5 1 2 5 0.2 0.5 1 2 5 3 ghz 40 mhz
february 1995 8 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w fig.14 minimum noise figure as a function of collector current, typical values. v ce = - 5 v. 2 4 2 0 10 mlb432 10 1 6 f (db) i (ma) c 1 ghz 500 mhz fig.15 minimum noise figure as a function of frequency, typical values. v ce = - 5 v. 4 2 0 mlb433 6 f (db) f (mhz) 10 4 10 3 10 2 i = c 30 ma 20 ma 10 ma 5 ma
february 1995 9 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w fig.16 common emitter noise figure circles, typical values. v ce = - 5 v; i c = - 10 ma; f = 500 mhz; z o = 50 w . mlb438 0 0 o 0.2 0.6 0.4 0.8 1.0 1.0 45 o 90 o 135 o 180 o 45 o 90 o 135 o 5 2 1 0.5 0.2 0 0.2 0.5 1 2 5 1 2 5 opt min f = 2.40 db g f = 3 db f = 4 db f = 5 db 0.2 0.5 fig.17 common emitter noise figure circles, typical values. v ce = - 5 v; i c = - 10 ma; f = 1 ghz; z o = 50 w . mlb439 0 0 o 0.2 0.6 0.4 0.8 1.0 1.0 45 o 90 o 135 o 180 o 45 o 90 o 135 o 5 2 1 0.5 0.2 0 0.2 0.5 1 2 5 1 2 5 0.5 f = 3.5 db f = 4 db f = 5 db min f = 2.90 db opt g 0.2
february 1995 10 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w spice parameters for the bft93w crystal sequence no. parameter value unit 1 is 835.1 aa 2 bf 48.56 - 3 nf 1.000 - 4 vaf 19.01 v 5 ikf 146.8 ma 6 ise 90.94 fa 7 ne 1.749 - 8 br 12.18 - 9 nr 997.6 m 10 var 3.374 v 11 ikr 6.742 ma 12 isc 23.42 fa 13 nc 1.449 - 14 rb 10.00 w 15 irb 1.000 m a 16 rbm 10.00 w 17 re 200.0 m w 18 rc 3.800 w 19 (1) xtb 0.000 - 20 (1) eg 1.110 ev 21 (1) xti 3.000 - 22 cje 1.570 pf 23 vje 600.0 mv 24 mje 382.2 m 25 tf 14.85 ps 26 xtf 2.209 - 27 vtf 2.989 v 28 itf 14.37 ma 29 ptf 0.000 deg 30 cjc 1.995 pf 31 vjc 584.4 mv 32 mjc 281.3 m 33 xcjc 120.0 m 34 tr 3.000 ns 35 (1) cjs 0.000 f note 1. these parameters have not been extracted, the default values are shown. list of components (see fig.18). 36 (1) vjs 750.0 mv 37 (1) mjs 0.000 - 38 fc 811.6 m designation value unit c be 2 ff c cb 100 ff c ce 100 ff l1 0.34 nh l2 0.10 nh l3 0.34 nh l b 0.60 nh l e 0.60 nh sequence no. parameter value unit ql b = 50; ql e = 50; ql b,e (f) = ql b,e ? (f/fc); fc = scaling frequency = 1 ghz. fig.18 package equivalent circuit sot323. handbook, halfpage mbc964 b e c b' c' e' l b l e l3 l1 l2 c cb c be ce c
february 1995 11 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w table 1 common emitter scattering parameters: v ce = - 5 v; i c = - 5 ma. table 2 noise data: v ce = - 5 v; i c = - 5 ma. f (mhz) s 11 s 21 s 12 s 22 g um (db) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.759 - 20.5 11.294 165.0 0.023 78.5 0.945 - 12.3 34.5 100 0.711 - 49.0 10.079 147.7 0.050 64.5 0.834 - 27.8 28.3 200 0.630 - 88.0 8.082 126.7 0.076 51.2 0.631 - 44.0 22.5 300 0.586 - 113.6 6.355 113.1 0.090 45.1 0.491 - 52.8 19.1 400 0.566 - 130.5 5.116 104.1 0.099 42.9 0.403 - 58.5 16.6 500 0.557 - 141.8 4.266 97.5 0.107 42.8 0.349 - 62.5 14.8 600 0.551 - 150.5 3.653 92.2 0.113 43.7 0.316 - 65.2 13.3 700 0.546 - 157.1 3.193 87.7 0.120 44.9 0.293 - 66.8 12.0 800 0.543 - 162.7 2.838 83.9 0.127 46.2 0.277 - 67.7 10.9 900 0.541 - 167.6 2.551 80.4 0.133 47.6 0.263 - 68.1 9.9 1000 0.541 - 172.0 2.323 77.4 0.140 49.1 0.249 - 68.7 9.1 1200 0.549 - 179.4 1.975 71.7 0.153 51.6 0.223 - 71.8 7.7 1400 0.559 174.8 1.737 66.4 0.168 53.8 0.212 - 78.3 6.6 1600 0.565 170.3 1.555 61.7 0.183 55.2 0.215 - 84.5 5.7 1800 0.566 165.6 1.420 57.7 0.197 56.8 0.220 - 87.5 4.9 2000 0.575 160.5 1.310 54.2 0.213 58.3 0.215 - 91.0 4.3 2200 0.594 156.3 1.217 51.1 0.228 59.7 0.208 - 98.1 3.8 2400 0.613 153.7 1.135 47.7 0.242 60.6 0.217 - 107.7 3.4 2600 0.623 151.4 1.064 44.8 0.255 60.9 0.242 - 114.1 2.9 2800 0.618 148.2 1.019 41.7 0.271 61.5 0.264 - 116.9 2.6 3000 0.621 144.5 0.975 39.3 0.289 61.9 0.275 - 119.3 2.2 f (mhz) f min (db) g opt r n (ratio) (deg) 500 1.80 0.307 86.5 0.320 1000 2.55 0.358 121.0 0.280
february 1995 12 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w table 3 common emitter scattering parameters: v ce = - 5 v; i c = - 10 ma. table 4 noise data: v ce = - 5 v; i c = - 10 ma. f (mhz) s 11 s 21 s 12 s 22 g um (db) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.608 - 31.5 18.195 160.2 0.020 75.6 0.900 - 18.0 34.4 100 0.571 - 72.1 15.044 138.8 0.041 60.6 0.725 - 38.4 28.5 200 0.538 - 114.5 10.475 117.4 0.059 51.1 0.490 - 56.6 23.1 300 0.531 - 136.1 7.676 106.0 0.070 49.3 0.360 - 66.3 19.7 400 0.531 - 149.0 5.989 98.6 0.079 50.2 0.287 - 73.0 17.4 500 0.532 - 157.3 4.907 93.2 0.088 51.8 0.245 - 77.9 15.5 600 0.534 - 163.6 4.161 88.9 0.097 53.8 0.221 - 81.4 14.1 700 0.533 - 168.6 3.613 85.1 0.106 55.4 0.204 - 83.2 12.8 800 0.532 - 172.9 3.195 81.8 0.116 56.9 0.192 - 84.2 11.7 900 0.534 - 176.8 2.866 78.8 0.125 58.1 0.179 - 84.5 10.7 1000 0.535 179.7 2.603 76.2 0.135 59.3 0.167 - 85.3 9.9 1200 0.545 173.7 2.206 71.2 0.153 61.0 0.145 - 90.1 8.5 1400 0.557 169.2 1.931 66.6 0.172 62.0 0.140 - 98.7 7.4 1600 0.561 165.5 1.724 62.2 0.191 62.3 0.149 - 104.6 6.5 1800 0.563 161.2 1.570 58.5 0.208 62.7 0.154 - 106.3 5.7 2000 0.574 156.6 1.447 55.2 0.227 63.2 0.150 - 109.4 5.0 2200 0.593 153.0 1.343 52.4 0.244 63.7 0.148 - 117.9 4.5 2400 0.612 150.6 1.251 49.2 0.260 64.0 0.165 - 127.5 4.1 2600 0.620 148.8 1.171 46.3 0.274 63.5 0.192 - 131.8 3.6 2800 0.616 146.0 1.122 43.2 0.290 63.3 0.213 - 132.1 3.3 3000 0.618 142.3 1.074 40.7 0.309 63.2 0.223 - 133.3 2.9 f (mhz) f min (db) g opt r n (ratio) (deg) 500 2.40 0.304 94.7 0.430 1000 2.90 0.321 136.9 0.270
february 1995 13 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w table 5 common emitter scattering parameters: v ce = - 5 v; i c = - 20 ma. table 6 noise data: v ce = - 5 v; i c = - 20 ma. f (mhz) s 11 s 21 s 12 s 22 g um (db) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.450 - 49.1 25.274 154.6 0.018 72.5 0.830 - 24.1 34.1 100 0.475 - 99.1 18.682 130.2 0.034 59.2 0.608 - 47.9 28.5 200 0.502 - 135.9 11.661 110.7 0.047 54.5 0.379 - 67.2 23.3 300 0.516 - 151.8 8.244 101.0 0.058 55.6 0.270 - 77.9 20.0 400 0.526 - 161.1 6.342 94.7 0.068 58.1 0.215 - 86.1 17.7 500 0.530 - 167.1 5.156 90.2 0.079 60.1 0.185 - 92.5 15.8 600 0.534 - 171.9 4.350 86.3 0.089 61.9 0.169 - 96.7 14.4 700 0.535 - 175.7 3.768 83.0 0.101 63.2 0.157 - 98.7 13.1 800 0.536 - 179.1 3.326 80.1 0.112 64.0 0.147 - 99.8 12.0 900 0.538 177.7 2.980 77.3 0.123 64.8 0.137 - 100.5 11.1 1000 0.541 174.9 2.703 74.9 0.134 65.4 0.127 - 101.9 10.2 1200 0.554 169.8 2.285 70.3 0.154 66.2 0.111 - 109.1 8.8 1400 0.566 166.1 1.995 65.9 0.175 66.6 0.112 - 118.8 7.7 1600 0.571 162.6 1.777 61.7 0.195 66.0 0.125 - 122.9 6.8 1800 0.573 158.8 1.616 58.2 0.214 66.0 0.130 - 123.1 6.0 2000 0.585 154.4 1.488 55.0 0.234 66.1 0.127 - 126.2 5.3 2200 0.604 151.0 1.380 52.4 0.252 66.2 0.130 - 135.1 4.8 2400 0.624 148.8 1.285 49.4 0.268 66.2 0.152 - 143.0 4.4 2600 0.633 147.1 1.200 46.6 0.282 65.5 0.180 - 144.7 3.9 2800 0.626 144.3 1.148 43.5 0.299 65.0 0.199 - 143.3 3.5 3000 0.629 140.8 1.100 41.0 0.319 64.7 0.208 - 143.7 3.2 f (mhz) f min (db) g opt r n (ratio) (deg) 500 2.80 0.301 100.8 0.610 1000 3.60 0.356 152.2 0.280
february 1995 14 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w table 7 common emitter scattering parameters: v ce = - 5 v; i c = - 30 ma. table 8 noise data: v ce = - 5 v; i c = - 30 ma. f (mhz) s 11 s 21 s 12 s 22 g um (db) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.382 - 62.3 28.063 151.4 0.016 71.2 0.781 - 27.1 33.7 100 0.453 - 113.1 19.479 126.1 0.030 58.8 0.543 - 51.8 28.3 200 0.502 - 144.8 11.682 107.7 0.043 56.8 0.327 - 70.7 23.1 300 0.521 - 158.0 8.162 98.8 0.054 58.9 0.232 - 81.5 19.8 400 0.532 - 165.8 6.248 92.9 0.065 61.4 0.185 - 89.9 17.5 500 0.537 - 170.8 5.069 88.6 0.076 63.4 0.161 - 96.5 15.7 600 0.542 - 174.9 4.269 84.9 0.088 65.0 0.148 - 100.5 14.2 700 0.543 - 178.2 3.692 81.7 0.099 65.8 0.139 - 102.3 13.0 800 0.545 178.7 3.258 78.8 0.111 66.4 0.131 - 103.2 11.9 900 0.548 176.0 2.917 76.1 0.122 67.0 0.123 - 103.6 10.9 1000 0.552 173.2 2.644 73.8 0.133 67.4 0.114 - 104.8 10.1 1200 0.565 168.6 2.233 69.2 0.154 68.0 0.101 - 112.5 8.7 1400 0.577 165.0 1.948 64.9 0.175 68.2 0.105 - 121.9 7.6 1600 0.584 161.7 1.734 60.8 0.195 67.5 0.119 - 125.4 6.7 1800 0.586 157.9 1.577 57.3 0.214 67.3 0.125 - 125.0 5.8 2000 0.598 153.6 1.451 54.2 0.234 67.3 0.124 - 128.3 5.2 2200 0.620 150.3 1.345 51.5 0.252 67.5 0.129 - 137.0 4.8 2400 0.639 148.1 1.251 48.7 0.269 67.5 0.152 - 144.6 4.3 2600 0.646 146.3 1.169 46.0 0.284 66.6 0.181 - 146.1 3.8 2800 0.642 143.4 1.118 43.0 0.300 66.2 0.200 - 144.7 3.4 3000 0.644 139.8 1.071 40.5 0.321 65.7 0.210 - 145.0 3.1 f (mhz) f min (db) g opt r n (ratio) (deg) 500 3.40 0.308 104.2 0.830 1000 4.20 0.380 164.0 0.310
february 1995 15 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w table 9 common emitter scattering parameters: v ce = - 10 v; i c = - 5 ma. table 10 noise data: v ce = - 10 v; i c = - 5 ma. f (mhz) s 11 s 21 s 12 s 22 g um (db) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.837 - 16.8 11.098 166.4 0.020 80.4 0.947 - 10.2 36.0 100 0.781 - 40.2 10.061 150.4 0.046 67.6 0.856 - 23.6 29.9 200 0.670 - 73.9 8.331 130.4 0.073 54.7 0.674 - 38.2 23.6 300 0.592 - 98.6 6.727 116.7 0.088 48.3 0.537 - 46.3 19.9 400 0.547 - 116.1 5.490 107.3 0.098 45.8 0.447 - 51.2 17.3 500 0.523 - 128.7 4.616 100.5 0.106 45.2 0.389 - 54.5 15.4 600 0.507 - 138.6 3.971 94.9 0.114 45.6 0.352 - 56.5 13.8 700 0.495 - 146.1 3.476 90.3 0.121 46.4 0.327 - 57.6 12.5 800 0.487 - 152.5 3.094 86.3 0.129 47.3 0.309 - 58.0 11.4 900 0.481 - 158.1 2.782 82.6 0.136 48.2 0.294 - 57.8 10.4 1000 0.478 - 163.1 2.532 79.5 0.143 49.3 0.279 - 57.8 9.5 1200 0.483 - 171.8 2.155 73.7 0.156 51.0 0.250 - 59.2 8.1 1400 0.493 - 178.2 1.895 68.4 0.171 52.4 0.234 - 63.8 7.0 1600 0.499 176.9 1.694 63.6 0.185 53.2 0.232 - 69.2 6.1 1800 0.501 172.0 1.541 59.6 0.198 54.4 0.233 - 71.8 5.3 2000 0.509 166.5 1.418 55.9 0.212 55.5 0.227 - 74.1 4.6 2200 0.529 161.8 1.317 52.6 0.224 56.5 0.215 - 79.5 4.0 2400 0.550 158.8 1.228 49.0 0.236 57.2 0.215 - 88.7 3.6 2600 0.564 156.7 1.148 45.9 0.246 57.5 0.232 - 96.4 3.1 2800 0.564 153.7 1.100 42.8 0.259 58.2 0.253 - 100.1 2.8 3000 0.569 150.0 1.051 40.2 0.274 58.9 0.262 - 102.7 2.4 f (mhz) f min (db) g opt r n (ratio) (deg) 500 2.00 0.340 73.0 0.440 1000 2.50 0.380 105.0 0.360
february 1995 16 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w table 11 common emitter scattering parameters: v ce = - 10 v; i c = - 10 ma. table 12 noise data: v ce = - 10 v; i c = - 10 ma. f (mhz) s 11 s 21 s 12 s 22 g um (db) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.744 - 24.2 18.034 162.0 0.019 77.2 0.902 - 15.2 35.9 100 0.666 - 56.4 15.339 142.3 0.040 63.6 0.757 - 33.0 30.0 200 0.556 - 95.4 11.171 121.0 0.059 53.5 0.533 - 49.6 24.0 300 0.507 - 119.1 8.353 109.0 0.071 50.8 0.398 - 57.9 20.5 400 0.485 - 134.4 6.576 101.2 0.081 51.0 0.319 - 63.2 18.0 500 0.474 - 144.5 5.412 95.6 0.090 52.2 0.272 - 66.9 16.1 600 0.469 - 152.4 4.597 91.1 0.099 53.7 0.243 - 69.2 14.6 700 0.465 - 158.4 3.997 87.2 0.108 54.9 0.224 - 70.3 13.3 800 0.461 - 163.5 3.537 83.9 0.118 56.1 0.209 - 70.3 12.2 900 0.459 - 168.1 3.170 80.8 0.128 57.0 0.196 - 69.7 11.2 1000 0.460 - 172.3 2.875 78.2 0.137 57.8 0.183 - 69.3 10.4 1200 0.469 - 179.3 2.435 73.1 0.155 59.1 0.157 - 71.0 8.9 1400 0.482 175.4 2.130 68.4 0.173 59.8 0.144 - 77.4 7.8 1600 0.488 171.5 1.898 64.1 0.191 59.7 0.147 - 83.7 6.8 1800 0.489 167.2 1.723 60.4 0.207 59.9 0.150 - 85.2 6.0 2000 0.501 162.2 1.584 57.0 0.224 60.3 0.144 - 87.1 5.3 2200 0.522 158.0 1.469 54.0 0.239 60.6 0.134 - 94.3 4.8 2400 0.543 155.4 1.367 50.7 0.253 60.7 0.140 - 106.3 4.3 2600 0.557 153.8 1.278 47.8 0.264 60.3 0.162 - 113.7 3.9 2800 0.556 151.0 1.222 44.7 0.278 60.4 0.183 - 115.3 3.5 3000 0.560 147.6 1.168 42.1 0.295 60.4 0.192 - 116.6 3.1 f (mhz) f min (db) g opt r n (ratio) (deg) 500 2.40 0.270 83.0 0.400 1000 2.90 0.350 115.0 0.350
february 1995 17 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w table 13 common emitter scattering parameters: v ce = - 10 v; i c = - 20 ma. table 14 noise data: v ce = - 10 v; i c = - 20 ma. f (mhz) s 11 s 21 s 12 s 22 g um (db) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.655 - 33.6 25.207 156.9 0.018 74.2 0.840 - 20.3 35.8 100 0.568 - 73.8 19.459 133.9 0.035 61.0 0.644 - 41.3 29.8 200 0.487 - 113.4 12.634 113.7 0.050 54.9 0.416 - 58.0 24.0 300 0.463 - 134.1 9.050 103.5 0.061 55.1 0.299 - 66.3 20.6 400 0.456 - 146.7 6.997 96.9 0.072 56.9 0.236 - 72.0 18.2 500 0.453 - 154.7 5.702 92.1 0.082 58.5 0.200 - 76.3 16.3 600 0.453 - 161.0 4.818 88.2 0.093 60.0 0.179 - 79.0 14.8 700 0.451 - 165.7 4.171 84.8 0.104 61.0 0.165 - 79.9 13.5 800 0.451 - 169.9 3.683 81.8 0.115 61.8 0.155 - 79.9 12.4 900 0.452 - 173.7 3.297 79.0 0.126 62.4 0.143 - 79.0 11.4 1000 0.454 - 177.3 2.986 76.6 0.137 62.9 0.132 - 78.5 10.6 1200 0.467 176.6 2.521 71.9 0.157 63.4 0.110 - 81.6 9.2 1400 0.482 172.4 2.200 67.6 0.176 63.4 0.103 - 90.5 8.0 1600 0.490 168.8 1.956 63.6 0.195 62.8 0.110 - 97.4 7.1 1800 0.493 164.8 1.774 60.1 0.212 62.7 0.114 - 98.0 6.2 2000 0.505 159.8 1.630 56.8 0.230 62.7 0.109 - 100.1 5.6 2200 0.528 155.9 1.509 54.1 0.245 62.8 0.103 - 109.7 5.0 2400 0.550 153.6 1.405 51.0 0.260 62.7 0.115 - 122.8 4.6 2600 0.563 151.9 1.312 48.1 0.273 62.2 0.141 - 128.2 4.1 2800 0.562 149.2 1.253 45.2 0.287 62.0 0.160 - 127.8 3.7 3000 0.565 145.8 1.199 42.6 0.305 61.7 0.169 - 128.3 3.4 f (mhz) f min (db) g opt r n (ratio) (deg) 500 3.00 0.240 98.0 0.440 1000 3.60 0.320 131.0 0.400
february 1995 18 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w table 15 common emitter scattering parameters: v ce = - 10 v; i c = - 30 ma. table 16 noise data: v ce = - 10 v; i c = - 30 ma. f (mhz) s 11 s 21 s 12 s 22 g um (db) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.617 - 39.1 28.045 153.9 0.017 73.1 0.797 - 22.6 35.4 100 0.529 - 82.4 20.389 129.6 0.032 60.3 0.583 - 44.1 29.4 200 0.464 - 120.8 12.630 110.4 0.047 56.4 0.364 - 59.3 23.7 300 0.449 - 139.7 8.920 101.0 0.058 57.3 0.259 - 66.3 20.3 400 0.446 - 151.0 6.853 94.8 0.069 59.4 0.204 - 71.2 17.9 500 0.446 - 158.1 5.569 90.3 0.081 60.9 0.174 - 75.0 16.0 600 0.448 - 163.5 4.694 86.5 0.092 62.2 0.158 - 77.2 14.5 700 0.449 - 167.8 4.060 83.3 0.103 63.0 0.147 - 77.7 13.2 800 0.450 - 171.7 3.579 80.4 0.115 63.6 0.139 - 77.1 12.1 900 0.452 - 175.1 3.204 77.7 0.126 63.8 0.131 - 75.9 11.2 1000 0.456 - 178.5 2.902 75.4 0.136 64.1 0.122 - 75.0 10.3 1200 0.472 175.9 2.448 70.8 0.157 64.3 0.103 - 77.7 8.9 1400 0.488 171.7 2.134 66.6 0.176 64.2 0.097 - 87.1 7.8 1600 0.498 168.1 1.898 62.5 0.194 63.6 0.106 - 94.6 6.9 1800 0.502 164.0 1.721 59.1 0.211 63.4 0.112 - 95.7 6.0 2000 0.516 159.3 1.580 56.0 0.229 63.5 0.108 - 98.0 5.4 2200 0.539 155.4 1.464 53.2 0.245 63.7 0.103 - 108.1 4.8 2400 0.562 152.9 1.362 50.2 0.260 63.6 0.116 - 121.5 4.4 2600 0.575 151.2 1.273 47.4 0.272 63.0 0.141 - 127.4 3.9 2800 0.573 148.4 1.217 44.5 0.287 62.9 0.162 - 127.3 3.5 3000 0.576 144.7 1.164 42.0 0.305 62.6 0.172 - 128.1 3.2 f (mhz) f min (db) g opt r n (ratio) (deg) 500 3.60 0.250 101.0 0.550 1000 4.20 0.310 143.0 0.480
february 1995 19 philips semiconductors product speci?cation pnp 4 ghz wideband transistor bft93w package outline definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation. dimensions in mm. fig.19 sot323. handbook, full pagewidth 0.3 0.1 0.25 0.10 0.2 0.1 max 1.00 max mbc871 1.4 1.2 2.2 1.8 b a 1.35 1.15 0.4 0.2 b m 0.2 a m 0.2 2.2 2.0 3 2 1
philips semiconductors philips semiconductors C a worldwide company argentina: ierod, av. juramento 1992 - 14.b, (1428) buenos aires, tel. (541)786 7633, fax. (541)786 9367 australia: 34 waterloo road, north ryde, nsw 2113, tel. (02)805 4455, fax. (02)805 4466 austria: triester str. 64, a-1101 wien, p.o. box 213, tel. (01)60 101-1236, fax. (01)60 101-1211 belgium: postbus 90050, 5600 pb eindhoven, the netherlands, tel. (31)40 783 749, fax. (31)40 788 399 brazil: rua do rocio 220 - 5 th floor, suite 51, cep: 04552-903-s?o paulo-sp, brazil. p.o. box 7383 (01064-970). tel. (011)829-1166, fax. (011)829-1849 canada: integrated circuits: tel. (800)234-7381, fax. (708)296-8556 discrete semiconductors: 601 milner ave, scarborough, ontario, m1b 1m8, tel. (0416)292 5161 ext. 2336, fax. (0416)292 4477 chile: av. santa maria 0760, santiago, tel. (02)773 816, fax. (02)777 6730 colombia: carrera 21 no. 56-17, bogota, d.e., p.o. box 77621, tel. (571)217 4609, fax. (01)217 4549 denmark: prags boulevard 80, pb 1919, dk-2300 copenhagen s, tel. (032)88 2636, fax. (031)57 1949 finland: sinikalliontie 3, fin-02630 espoo, tel. (9)0-50261, fax. (9)0-520971 france: 4 rue du port-aux-vins, bp317, 92156 suresnes cedex, tel. (01)4099 6161, fax. (01)4099 6427 germany: p.o. box 10 63 23, 20095 hamburg , tel. (040)3296-0, fax. (040)3296 213 greece: no. 15, 25th march street, gr 17778 tavros, tel. (01)4894 339/4894 911, fax. (01)4814 240 hong kong: 15/f philips ind. bldg., 24-28 kung yip st., kwai chung, tel. (0)4245 121, fax. (0)4806 960 india: peico electronics & electricals ltd., components dept., shivsagar estate, block 'a', dr. annie besant rd., worli, bombay 400 018, tel. (022)4938 541, fax. (022)4938 722 indonesia: philips house, jalan h.r. rasuna said kav. 3-4, p.o. box 4252, jakarta 12950, tel. (021)5201 122, fax. (021)5205 189 ireland: newstead, clonskeagh, dublin 14, tel. (01)640 000, fax. (01)640 200 italy: viale f. testi, 327, 20162 milano, tel. (02)6752.1, fax. (02)6752.3350 japan: philips bldg 13-37 , kohnan 2 -chome, minato-ku, kokio 108, tel. (03)3740 5101, fax. (03)3740 0570 korea: (republic of) philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. (02)794-5011, fax. (02)798-8022 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. (03)757 5511, fax. (03)757 4880 mexico: philips components, 5900 gateway east, suite 200, el paso, tx 79905, tel. 9-5(800)234-7381, fax. (708)296-8556 netherlands: postbus 90050, 5600 pb eindhoven, tel. (040)78 37 49, fax. (040)78 83 99 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. (09)849-4160, fax. (09)849-7811 norway: box 1, manglerud 0612, oslo, tel. (22)74 8000, fax. (22)74 8341 pakistan: philips markaz, m.a. jinnah rd., karachi 3, tel. (021)577 039, fax. (021)569 1832 philippines: philips semiconductors philippines inc, 106 valero st. salcedo village, p.o. box 911, makati, metro manila, tel. (02)810 0161, fax. (02)817 3474 portugal: av. eng. duarte pacheco 6, 1009 lisboa codex, tel. (01)683 121, fax. (01)658 013 singapore: lorong 1, toa payoh, singapore 1231, tel. (65)350 2000, fax. (65)251 6500 south africa: 195-215 main road, martindale, p.o. box 7430,johannesburg 2000, tel. (011)470-5433, fax. (011)470-5494 spain: balmes 22, 08007 barcelona, tel. (03)301 6312, fax. (03)301 42 43 sweden: kottbygatan 7, akalla. s-164 85 stockholm, tel. (0)8-632 2000, fax. (0)8-632 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. (01)488 2211, fax. (01)481 7730 taiwan: 69, min sheng east road, sec 3, p.o. box 22978, taipei 10446, tel. (2)509 7666, fax. (2)500 5899 thailand: philips electronics (thailand) ltd., 60/14 moo 11, bangna - trad road km. 3 prakanong, bangkok 10260, tel. (2)399-3280 to 9, (2)398-2083, fax. (2)398-2080 turkey: talatpasa cad. no. 5, 80640 levent/istanbul, tel. (0212)279 2770, fax. (0212)269 3094 united kingdom: philips semiconductors limited, p.o. box 65, philips house, torrington place, london, wc1e 7hd, tel. (071)436 41 44, fax. (071)323 03 42 united states: integrated circuits: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. (800)234-7381, fax. (708)296-8556 discrete semiconductors: 2001 west blue heron blvd., p.o. box 10330, riviera beach, florida 33404, tel. (800)447-3762 and (407)881-3200, fax. (407)881-3300 uruguay: coronel mora 433, montevideo, tel. (02)70-4044, fax. (02)92 0601 for all other countries apply to: philips semiconductors, international marketing and sales, building baf-1, p .o. box 218, 5600 md, eindhoven, the netherlands, t elex 35000 phtcnl, fax. +31-40-724825 scd28 ? philips electronics n.v . 1994 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. printed in the netherlands 9397 728 50011

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