unisonic technologies co., ltd udn302 power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2009 unisonic technologies co., ltd qw-r502-278.b p-channel 2.5v specified powertrench mosfet ? description the udn302 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) =55m ? @ v gs =-4.5v * r ds(on) =80m ? @ v gs =-2.5v * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? symbol 2.gate 1.source 3.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing udn302l-ae3-r UDN302G-AE3-R sot-23 s g d tape reel ? marking nc03 l: lead free g: halogen free
udn302 power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-278.b ? absolute maximum ratings (t a =25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -20 v gate-source voltage v gss 12 v continuous drain current i d -2.4 a pulsed drain current i dm -10 a maximum power dissipation p d 0.5 w junction temperature t j +150 storage temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. ? thermal data parameter symbol min typ max unit junction-to-ambient ja 250 /w junction-to-case jc 75 /w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250a -20 v breakdown voltage temperature coefficient bv dss / t j i d =-250a, referenced to 25c -12 mv/c drain-source leakage current i dss v ds =-16v, v gs =0v -1 a gate-source leakage current i gss v gs =12v, v ds =0v 100 na on characteristics (note) gate threshold voltage v gs(th) v ds =v gs , i d =-250a -0.6 -1.0 -1.5 v gate threshold voltage temperature coefficient v gs(th) / t j i d =-250 a, referenced to 25c 3 mv/c v gs =-4.5v, i d =-2.4a 44 55 static drain-source on-resistance r ds(on) v gs =-2.5v, i d =-2a 64 80 m ? on - state drain current i d(on) v gs =-4.5v, v ds =-5v -10 a forward transconductance g fs v ds =-5v, i d =-2.4a 10 s dynamic parameters input capacitance c iss 882 pf output capacitance c oss 211 pf reverse transfer capacitance c rss v ds =-10v, v gs =0v, f=1.0mhz 112 pf switching parameters (note) total gate charge q g 9 14 nc gate source charge q gs 2 nc gate drain charge q gd v ds =-10v, i d =-2.4a, v gs =-4.5v 3 nc turn-on delay time t d(on) 13 23 ns turn-on rise time t r 11 20 ns turn-off delay time t d(off) 25 40 ns turn-off fall-time t f v dd =-10v, i d =-1a, v gs =-4.5v r g =6 ? 15 27 ns source- drain diode ratings and characteristics diode forward voltage v sd v gs =0v, i s =-0.42a (note) -0.7 -1.2 v maximum body-diode continuous current i s -0.42 a note: pulse test: pulse width 300 s, duty cycle 2%
udn302 power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-278.b ? typical characteristics drain current vs. gate threshold voltage gate threshold voltage, v th (v) drain current vs. drain-source breakdown voltage drain-source breakdown voltage, bv dss (v) 0 50 250 100 150 200 300 350 400 450 030 10 20 4 0 0 50 250 100 150 200 300 0.2 00.8 0.4 0.6 1.0 drain-source on-state resistance characteristics drain to source voltage, v ds (mv) 150 0 100 50 200 3.0 0 1.0 2.0 2.5 0.5 1.5 i d =-2.4a v gs =-4.5v i d =-2a v gs =-2.5v
udn302 power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-278.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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