v d s = 20 v rd s ( o n ) , v g s @ 4 . 5 v , i d s @ 5 . 0 a < 31m rd s ( o n ) , v g s @ 2 . 5 v , i d s @ 4 . 5 a < 37m rd s ( o n ) , v g s @ 1 . 8 v , i d s @ 3 . 9 a < 85m f ea t u r es a d v an c ed t r en c h p r o c e ss t e c hno l o gy hi g h d en s i t y c e ll d e s i g n f o r ul t r a lo w o n - r e s i s t an ce p a ck a g e di m en s i ons m a x i m u m r a t i n g s and t he r m a l c ha r a c t e r i s t i cs ( t a = 25o c un l e ss o t he r w i s e no t ed ) d g s sot-23-3l m illi m e t er m illi m e t er r e f. m in . m a x . r e f. m in . m a x . a 2 . 70 3 . 10 g 1 . 90 r e f . b 2 . 65 2 . 95 h 1 . 00 1 . 30 c 1 . 50 1 . 70 k 0 . 10 0 . 20 d 0 . 35 0 . 50 j 0 . 40 - e 0 0 . 10 l 0 . 85 1 . 15 f 0 . 45 0 . 55 m 0 ^ 10 ^ p a r a m e t er s y m b ol l i m it u n it dr a i n - s o u r c e v o l t a ge v ds 20 g a t e - s o u r c e v o l t a ge v gs + 8 v c o n t i nu o u s dr a i n c u rr e nt i d 4 . 9 p u l s e d dr a i n c u rr e n t i dm 15 a t a = 25 o c 0 . 75 m a x i m u m p o w e r d i ss i p a t i on t a = 75 o c p d 0 . 48 w o p e r a t i ng j un c t i o n a nd s t o r a g e t e m p e r a t u r e r a nge t j , t s tg - 55 t o 150 o c j un c t i o n - t o - a m b i e n t t h e r m a l r e s i s t a n c e ( p c b m o un t e d ) r q ja 140 o c / w 20v n-channel enhancement mode mosfet SI2312 1 date:2011/05 www.htsemi.com semiconductor jinyu
e l e c t r i c a l ch a r a c t e r i s t i cs p a r a m e t er t es t c o nd i t i on s t a t ic dr a i n - s o u r c e b r ea k d o w n v o l t a ge bv d ss v gs = 0 v , i d = 250u a 20 v dr a i n - s o u r c e o n - s t a t e r e s i s t a n ce r d s ( on) v gs = 4 . 5 v , i d = 5 . 0 a 21 . 0 31 . 0 dr a i n - s o u r c e o n - s t a t e r e s i s t a n ce r d s ( on) v gs = 2 . 5 v , i d = 4 . 5 a 24 . 0 37 . 0 dr a i n - s o u r c e o n - s t a t e r e s i s t a n ce r d s ( on) v gs = 1 . 8 v , i d = 4 . 0 a 50 . 0 85 . 0 m w g a t e t h r e s h o l d v o l t a ge v g s ( t h) v ds =v gs , i d = 250u a 0 . 4 1 v z e r o g a t e v o l t a g e dr a i n c u rr e nt i d ss v ds = 20 v , v gs = 0 v 1 u a g a t e b o d y l ea k a ge i g ss v gs = 8 v , v ds = 0 v 100 n a f o r w a r d t r a n s c o ndu c t a n ce g fs v ds = 15 v , i d = 5 . 0 a 40 s d y n a m ic t o t a l g a t e c h a r ge q g 1 1 . 2 14 g a t e - s o u r c e c h a r ge q gs 1 . 4 g a t e -dr a i n c h a r ge q gd v ds = 10 v , i d = 5 . 0 a v gs = 4 . 5 v 2 . 2 n c t u r n - o n d e l a y t i me t d ( on) 15 25 t u r n - o n r i s e t i me t r 40 60 t u r n - o f f d e l a y t i me t d ( o ff) 48 70 t u r n - o f f f a ll t i me t f v dd = 10 v , r l=10 ! i d = 1 a , v g en = 4 . 5 v r g = 6 w 31 45 n s i npu t c a p a c i t a n ce c iss 500 o u t pu t c a p a c i t a n c e c o ss 300 r e v e r s e t r a n s f e r c a p a c i t a n ce c r ss v d s = 8 v , v gs = 0 v f = 1 . 0 m h z 140 p f s o ur ce -d r a i n d i o de m a x . d i o d e f o r w a r d c u rr e n t i s 1 . 7 a d i o d e f o r w a r d v o l t a g e v sd i s = 1 . 8 a , v gs = 0 v 1 . 2 v n o t e : p u l s e t e s t: p u l s e w i d t h <= 300u s , du t y c y c l e <= 2% symbol min. typ. miax. unit 20v n-channel enhancement mode mosfet SI2312 2 date:2011/05 www.htsemi.com semiconductor jinyu
20v n-channel enhancement mode mosfet SI2312 3 date:2011/05 www.htsemi.com semiconductor jinyu
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