technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com pnp silicon dual transistor qualified per mil-prf-19500 /336 t4-lds-0118 rev. 1 (091095) page 1 of 3 devices levels 2n3810 2n3811 jan 2n3810l 2n3811l jantx 2n3810u 2n3811u jantv jans absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit collector-emitter voltage v ceo 60 vdc collector-base voltage v cbo 60 vdc emitter-base voltage v ebo 5.0 vdc collector current i c 50 madc one section 1 both sections 2 total power dissipation @ t a = +25 c p t 200 350 mw operating & storage junction temperature range t j , t stg -65 to +200 c note: 1. derate linearly 1.143mw/c for t a > +25c (one section) 2. derate linearly 2.00mw/c for t a > +25c (both sections) electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics collector-emitter breakdown voltage i c = 100 adc v (br)ceo 60 vdc collector-base cutoff current v cb = 50vdc v cb = 60vdc i cbo 10 10 adc adc emitter-base cutoff current v eb = 4.0vdc v eb = 5.0vdc i ebo 10 10 adc adc to-78
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com pnp silicon dual transistor qualified per mil-prf-19500 /336 t4-lds-0118 rev. 1 (091095) page 2 of 3 electrical characteristics (con?t) parameters / test conditions symbol min. max. unit on charactertics forward-current transfer ratio i c = 10 adc, v ce = 5.0vdc i c = 100 adc, v ce = 5.0vdc i c = 1.0madc, v ce = 5.0vdc i c = 10madc, v ce = 5.0vdc 2n3810, 2n3810l , 2n3810u h fe 100 150 150 125 450 450 i c = 1.0 adc, v ce = 5.0vdc i c = 10 adc, v ce = 5.0vdc i c = 100 adc, v ce = 5.0vdc i c = 1.0madc, v ce = 5.0vdc i c = 10madc, v ce = 5.0vdc 2n3811, 2n3811l, 2n3811u h fe 75 225 300 300 250 900 900 collector-emitter saturation voltage i c = 100 adc, i b = 10 adc i c = 1.0madc, i b = 100 adc v ce(sat) 0.2 0.25 vdc base-emitter saturation voltage i c = 100 adc, i b = 10 adc i c = 1.0madc, i b = 100 adc v be(sat) 0.7 0.8 vdc base-emitter non-saturation voltage v ce = 5.0adc, i c = 100 adc v be 0.7 vdc dynamic characteristics forward current transfer ratio, magnitude i c = 500 adc, v ce = 5.0vdc, f = 30mhz i c = 1.0madc, v ce = 5.0vdc, f = 100mhz |h fe | 1.0 1.0 5.0 small-signal short circuit forward current transfer ratio i c = 1.0madc, v ce = 10vdc, f = 1.0khz 2n3810, 2n3810l , 2n3810u 2n3811, 2n3811l , 2n3811u h fe 150 300 600 900 small-signal short circuit input impedance i c = 1.0madc, v ce = 10vdc, f = 1.0khz 2n3810, 2n3810l , 2n3810u 2n3811, 2n3811l , 2n3811u h je 3.0 3.0 30 40 k small-signal short circuit output admittance i c = 1.0madc, v ce = 10vdc, f = 1.0khz 2n3810, 2n3810l , 2n3810u 2n3811, 2n3811l , 2n3811u h oe 5.0 60 mhos output capacitance v cb = 5.0vdc, i e = 0, 100khz f 1.0mhz c obo 5.0 pf input capacitance v eb = 5.0vdc, i c = 0, 100khz f 1.0mhz c ibo 8.0 pf
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com pnp silicon dual transistor qualified per mil-prf-19500 /336 t4-lds-0118 rev. 1 (091095) page 3 of 3 dynamic characteristics (cont.) parameters / test conditions symbol min. max. unit noise figure i c = 100 adc, v ce = 10vdc, f = 100hz, r g = 3.0k 2n3810, l, u f 1 7.0 i c = 100 adc, v ce = 10vdc, f = 1.0khz, r g = 3.0k 2n3810, l, u f 2 3.0 i c = 100 adc, v ce = 10vdc, f = 10khz, r g = 3.0k 2n3810, l, u f 3 2.5 i c = 100 adc, v ce = 10vdc, f = 10hz to 15.7khz, r g = 3.0k 2n3810, l, u f 4 3.5 db i c = 100 adc, v ce = 10vdc, f = 100hz, r g = 3.0k 2n3811, l, u f 1 4.0 i c = 100 adc, v ce = 10vdc, f = 1.0khz, r g = 3.0k 2n3811, l, u f 2 1.5 i c = 100 adc, v ce = 10vdc, f = 10khz, r g = 3.0k 2n3811, l, u f 3 2.0 i c = 100 adc, v ce = 10vdc, f = 10hz to 15.7khz, r g = 3.0k 2n3811, l, u f 4 2.5 db
|
