dxt751 low v ce(sat) pnp surface mount transistor features ? epitaxial planar die construction ? complementary npn type available (dxt651) ? ideally suited for automated assembly processes ? ideal for medium pow er switching or amplification applications ? lead free by design/rohs compliant (note 1) ? "green" dev ice (note 2) mechanical data ? case: sot89-3l ? case material: molded plastic, "green? molding compound. ul f lammability classification rating 94v-0 ? moisture sensitivity : level 1 per j-std-020c ? terminals: finish ? matte ti n annealed over copper leadframe (lead free plating). solderable per mil-std-202, method 208 ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.072 grams (approximate) new product sot89-3l 3 1 2,4 c o l l e c t o r e m i t t e r b a s e 4 3 2 1 c c b e t o p v i e w schematic and pin configuration maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v continuous collector current i c -3 a peak pulse collector current i cm -6 a thermal characteristics characteristic symbol value unit power dissipation (note 3) @ t a = 25c p d 1 w thermal resistance, junction to ambient air (note 3) @t a = 25c r ja 125 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our website at http:// www.di odes.com/products/lead_f ree/index.php. 3. device mounted on fr-4 pcb; pad lay out as shown on page 4 or in diodes inc. suggested pad layout doc ument ap02001, which ca n be found on our website at http:// www.di odes.com/datas heets/ap02001.pdf. ds31185 rev. 3 - 2 1 of 4 www. diodes.com dxt751 ? diodes incorporated
electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test conditions off characteristics (note 4) collector-base breakdown voltage v (br)cbo -80 ? ? v i c = -100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -60 ? ? v i c = -10ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5 ? ? v i e = -100 a, i c = 0 collector cutoff current i cbo ? ? -0.1 -10 a a v cb = -60v, i e = 0 v cb = -60v, i e = 0, t a = 100c emitter cutoff current i ebo ? ? -0.1 a v eb = -4v, i c = 0 on characteristics (note 4) collector-emitter saturation voltage v ce(sat) ? ? -0.08 -0.2 -0.3 -0.6 v i c = -1a, i b = -100ma i c = -3a, i b = -300ma base-emitter saturation voltage v be(sat) ? -0.9 -1.25 v i c = -1a, i b = -100ma base-emitter turn-on voltage v be(on) ? -0.8 -1 v v ce = -2v, i c = -1a dc current gain h fe 70 100 80 40 200 180 160 140 ? 300 ? ? ? v ce = -2v, i c = -50ma v ce = -2v, i c = -500ma v ce = -2v, i c = -1a v ce = -2v, i c = -2a ac characteristics transition frequency f t 100 145 ? mhz v ce = -10v, i c = -50ma, f = 100mhz output capacitance c obo ? ? 30 pf v cb = -10v, f = 1mhz switching times t on t off ? ? 45 200 ? ? ns ns i c = -500ma, v cc = -10v i b1 = i b2 = -50ma new product notes: 4. measured under pulsed condi tions. pulse width = 300 s. duty cycle 2%. 0 0 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 150 p , p o we r dissi p a t i o n (w) d t , ambient temperature ( c) a fig. 1 power dissipation vs. ambient temperature (note 3) -v , collector-emitter voltage (v) fig. 2 typical collector current vs. collector-emitter voltage ce 01 2 3 4 5 ds31185 rev. 3 - 2 2 of 4 www. diodes.com dxt751 ? diodes incorporated
-i , collector current (a) fig. 3 typical dc current gain vs. collector current c 0 50 100 150 200 250 300 350 400 -i collector current (a) fig. 4 typical collector-emitter saturation voltage vs. collector current c , 0 0.05 0.1 0.15 0.2 0.25 0.3 1 -i collector current (a) fig. 5 typical base-emitter turn-on voltage vs. collector current c , -i collector current (a) fig. 6 typical base-emitter saturation voltage vs. collector current c , v reverse voltage (v) fig. 7 typical capacitance characteristics r , 0 50 100 150 200 250 300 350 400 -i , collector current (ma) c f , current gain-bandwidth product (mhz) t fig. 8 typical gain-bandwidth product vs. collector current 0 50 100 150 200 010 2030405060708090100 v = -10v f = 100mhz ce new product ds31185 rev. 3 - 2 3 of 4 www. diodes.com dxt751 ? diodes incorporated
ordering information (note 5) device packaging shipping DXT751-13 sot89-3l 2500/tape & reel notes: 5. for packaging details, go to our website at http://www.di odes.com/ap02007.pdf. marking information new product kp2 yww (top view) kp2 = product type marking code yww = date code marking y = last digit of year ex: 7 = 2007 ww = week code 01 - 52 package outline dimensions e d h l a c e 8 ( 4 x ) b1 b d1 r 0 . 2 0 0 sot89-3l dim min max typ a 1.40 1.60 1.50 b 0.45 0.55 0.50 b1 0.37 0.47 0.42 c 0.35 0.43 0.38 d 4.40 4.60 4.50 d1 1.50 1.70 1.60 e 2.40 2.60 2.50 e ? ? 1.50 h 3.95 4.25 4.10 l 0.90 1.20 1.05 all dimensions in mm suggested pad layout 3.0 0.9 2.7 0.4 1.7 1.3 1.9 unit: mm important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated. ds31185 rev. 3 - 2 4 of 4 www.diodes.com dxt751 ? diodes incorporated
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