1/4 2011.09 - rev.a schottky barrier diode RB061US-30 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1)small power mold type. (tsmd8) 2)low v f 3)high reliability ? structure silicon epitaxial planer ? structure ? absolute maximum ratings (ta=25 c) symbol unit v rm v v r v io a i fsm a tj c tstg c ? electrical characteristics (ta=25 c) symbol min. typ. max. unit conditions v f 1 - 0.30 0.35 v i f =1.0a v f 2 - 0.35 0.40 v i f =2.0a reverse current i r - 280 900 a v r =15v capacitance between terminal ct - 80 - pf v r =20v, f=1mhz reverse recovery time trr - - 20 ns i f =0.5a, i r =1a, irr=0.25*i r ? taping dimensions (unit : mm) parameter limits average rectified forward current (*1) 2 forward current surge peak (60hz ? 1cyc) (*1) 8 reverse voltage (repetitive) 30 reverse voltage (dc) 30 (*1)mounted on epoxy board. 180 half sine wave parameter forward voltage junction temperature 125 storage temperature - 40 to + 125 manufacture date rohm : tsmd8 tsmd8 (5) (6) (7) (8 4 3 2 1 1pin mark data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RB061US-30 2/4 2011.09 - rev.a 0.001 0.01 0.1 1 10 0 100 200 300 400 500 forward voltage v f (mv) v f -i f characteristics forward current:i f (a) ta=75 c ta= ? 25 c ta=25 c ta=125 c 0.001 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 reverse voltage v r (v) v r -i r characteristics ta= ? 25 c ta=125 c ta=25 c ta=75 c reverse current:i r (ma) 10 100 1000 0 5 10 15 20 25 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz 350 360 370 380 390 400 v f dispersion map forward voltage:v f (mv) ave:357.7mv ta=25 c v f =2a n=30pcs 100 150 200 250 300 reverse current:i r ( a) i r dispersion map ta=25 c v r =15v n=30pcs ave:147.5 a 500 510 520 530 540 550 560 570 580 590 600 ave:514.4pf ta=25 c f=1mhz v r =0v n=10pcs capacitance between terminals:ct(pf) ct dispersion map www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RB061US-30 3/4 2011.09 - rev.a 0 20 40 60 80 100 1 10 100 0 25 50 75 100 125 150 175 200 8.3ms 1cyc i fsm dispersion map peak surge forward current:i fsm (a) ave:58.5a 0 5 10 15 20 25 30 ave:8.2ns ta=25 c i f =0.5a i r =1a irr=0.25*i r n=10pcs trr dispersion map reverse recovery time:trr(ns) 0 20 40 60 80 100 1 10 100 peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 8.3ms i fsm 1cyc 8.3ms peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics t i fsm 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 mounted on epoxy board rth(j - a) rth(j -c) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.5 1 1.5 2 2.5 3 3.5 4 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics dc d=1/2 sin( 180) www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RB061US-30 4/4 2011.09 - rev.a 0 0.5 1 1.5 2 2.5 3 3.5 4 0 25 50 75 100 125 0 0.005 0.01 0.015 0 10 20 30 reverse power dissipation:p r (w) reverse voltage:v r (v) v r -p r characteristics sin( 180) dc d=1/2 average rectified forward current:io(a) case temperature:tc( c) derating curve(io -tc) t tj=125 c d=t/t t v r io v r =15v 0a 0v sin( 180) dc d=1/2 www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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