features d trenchfet r power mosfet d esd protected: 3000 v SI6968EDQ-REVA vishay siliconix document number: 71802 s-21454?rev. d, 19-aug-02 www.vishay.com 1 dual n-channel 2.5-v (g-s) mosfet common drain, esd protection product summary v ds (v) r ds(on) ( ? ) i d (a) 2 0 0.022 @ v gs =4.5v ? 6.5 20 0.030 @ v gs =2.5v ? 5.5 SI6968EDQ-REVA d s 1 s 1 g 1 1 2 3 4 8 7 6 5 d s 2 s 2 g 2 tssop-8 top view d d g 1 s 1 d g 2 s 2 n-channel n-channel *130 ? *130 ? *typical value by design absolute maximum ratings (t a =25 _ c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 20 v gate-source voltage v gs ? 12 v c o n t i n u o u s d r a i n c u r r e n t ( t j = 1 5 0 _ c ) a t a =25 _ c i d ? 6.5 ? 5.2 continuous drain current (t j = 150 _ c) a t a =70 _ c i d ? 5.5 ? 3.5 a pulsed drain current i dm ? 30 a continuous source current (diode conduction) a i s 1.5 1.0 m a x i m u m p o w e r d i s s i p a t i o n a t a =25 _ c p d 1.5 1.0 w maximum power dissipation a t a =70 _ c p d 0.96 0.64 w operating junction and storage temperature range t j ,t stg --55 to 150 _ c thermal resistance ratings parameter symbol typ max unit m i j t i t a b i t a t 10 sec r 72 83 maximum junction-to-ambient a steady-state r thja 100 120 _ c/w maximum junction-to-foot (drain) steady-state r thjf 55 70 c / notes a. surface mounted on fr4 board, t 10 sec.
SI6968EDQ-REVA vishay siliconix www.vishay.com 2 document number: 71802 s-21454?rev. d, 19-aug-02 specifications (t j =25 _ c unless otherwise noted) parameter symbol test condition min typ a max unit static gate threshold voltage v gs(th) v ds =v gs ,i d = 250 m a 0.6 v gate-body leakage i gss v ds =0v,v gs = ? 4.5 v ? 200 na z e r o g a t e v o l t a g e d r a i n c u r r e n t i v ds =16v,v gs =0v 1 m a zero gate voltage drain current i dss v ds =16v,v gs =0v,t j =70 _ c 25 m a on-state drain current b i d(on) v ds 5v,v gs =4.5v 30 a d r a i n s o u r c e o n s t a t e r e s i s t a n c e b r d s ( ) v gs =4.5v,i d =6.5a 0.018 0.022 ? ? forward transconductance b g fs v ds =10v,i d =6.5a 25 s diode forward voltage b v sd i s =1.5a,v gs =0v 0.71 1.2 v dynamic a total gate charge q g 16 25 gate-source charge q gs v ds =10v, v gs =4.5v,i d =6.5a 2.5 nc gate-drain charge q gd 5.5 turn-on delay time t d(on) 140 210 rise time t r v d d =10 v ,r l =10 ? 230 350 n s turn-off delay time t d(off) v d d = 1 0 v , r l = 1 0 ? ? 1a,v gen =4.5v,r g =6 ? 600 900 ns fall time t f 450 700 notes a. for design aid only; not subject to production testing. b. pulse test; pulse width 300 m s, duty cycle 2%. typical characteristics (25 _ c unless noted) 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 6 12 18 24 30 012345 v gs =5thru2.5v t c = 125 _ c -- 5 5 _ c 2v 25 _ c output characteristics transfer characteristics v ds -- drain-to-source voltage (v) -- drain current (a) i d v gs -- gate-to-source voltage (v) -- drain current (a) i d 1.5 v
SI6968EDQ-REVA vishay siliconix document number: 71802 s-21454?rev. d, 19-aug-02 www.vishay.com 3 typical characteristics (25 _ c unless noted) -- on-resistance ( r ds(on) ? ) 0.6 0.8 1.0 1.2 1.4 1.6 --50 --25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 048121620 0.00 0.01 0.02 0.03 0.04 0.05 0 6 12 18 24 30 v ds =10v i d =6.5a i d -- drain current (a) v gs =4.5v i d =6.5a v gs =2.5v gate charge on-resistance vs. drain current -- gate-to-source voltage (v) q g -- total gate charge (nc) v gs on-resistance vs. junction temperature t j -- junction temperature ( _ c) (normalized) -- on-resistance ( r ds(on) ? ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.02 0.04 0.06 0.08 0.10 012345678 t j =25 _ c i d =6.5a 30 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage -- on-resistance ( r ds(on) ? ) v sd -- source-to-drain voltage (v) v gs -- gate-to-source voltage (v) -- source current (a) i s v gs =4.5v t j = 150 _ c
SI6968EDQ-REVA vishay siliconix www.vishay.com 4 document number: 71802 s-21454?rev. d, 19-aug-02 typical characteristics (25 _ c unless noted) 0 15 30 5 10 power (w) single pulse power, junction-to-ambient time (sec) 20 25 10 -- 3 10 -- 2 1 10 600 10 -- 1 10 -- 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja =100 _ c/w 3. t jm -- t a =p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 -- 3 10 -- 2 110 10 -- 1 10 -- 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 1 100 10 10 -- 1 10 -- 2 -- 0 . 6 -- 0 . 4 -- 0 . 2 -- 0 . 0 0.2 0.4 --50 --25 0 25 50 75 100 125 150 i d = 250 m a threshold voltage variance (v) v gs(th) t j -- temperature ( _ c)
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