2SB1322A -1a , -60v pnp plastic encapsulated transistor elektronische bauelemente 14-feb-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? a c e k f d b g h j rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? allow supply with the radial taping classification of h fe (1) product-rank 2SB1322A-q 2SB1322A-r 2SB1322A-s range 85~170 120~240 170~340 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo -60 v collector to emitter voltage v ceo -50 v emitter to base voltage v ebo -5 v collector current - continuous i c -1 a collector power dissipation p c 0.625 w thermal resistance from junction to ambient r ja 200 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo -60 - - v i c = -0.01ma, i e =0 collector to emitter breakdown voltage v (br)ceo -50 - - v i c = -2ma, i b =0 emitter to base breakdown voltage v (br)ebo -5 - - v i e = -0.01ma, i c =0 collector cut-off current i cbo - - -0.1 a v cb = -20v, i e =0 emitter cut-off current i ebo - - -0.1 a v eb = -5v, i c =0 dc current gain h fe (1) 85 - 340 v ce = -10v, i c = -0.5a h fe (2) 50 - - v ce = -5v, i c = -1a collector to emitter saturation voltage v ce(sat) - - -0.4 v i c = -0.5a, i b = -0.05a base to emitter saturation voltage v be(sat) - - -1.2 v i c = -0.5a, i b = -0.05a collector-base capacitance c cb - - 30 pf v cb = -10v, i e =0, f=1mhz transition frequency f t - 200 - mhz v ce = -10v, i c = -0.05a, f=200mhz to-92 ? emitte r ? collector ? base ref. millimeter min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76
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