1 of 7 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . ordering information rf mems ldmos vbat rf out rf in vmode1 ven vmode0 vcc cpl in cpl out gnd 5 4 1 2 3 6 7 10 9 8 amp bias control & pa/v mode enable RF7242 3v w-cdma band 2 linear pa module the RF7242 is a high-power, high-efficiency, linear power amplifier designed for use as the final rf amplifier in 3v, 50 ? w-cdma mobile cel- lular equipment and spread-spectrum systems. this pa is developed for umts band 2 which operates in the 1850mhz to 1910mhz frequency band. the RF7242 has two digital contro l pins to select one of three power modes to optimize performance and current drain at lower power levels. the part also has an integrated directional coupler which eliminates the need for an external discrete coup ler at the output. the RF7242 meets the spectral linearity requirements of high speed downlink packet access (hsdpa), high speed uplink packet access (hsupa), and long term evolu- tion (lte) data transmission and is assembled in a 10-pin, 3mmx3mm module. features ? hsdpa /hsupa /hspa+/lte ? low voltage positive bias supply (3.0v to 4.2v) ? +28.5dbm linear output power (+27.5dbm hsdpa and hspa+) ? high efficiency operation 47% at p out =+28.5dbm ? low quiescent current in low power mode: 5ma when using dc/dc converter ? internal voltage regulator eliminates the need for exter- nal reference voltage (v ref ) ? 3-mode power states with digital control interface ? optimized for dc/dc con- verter operation ? integrated power coupler ? integrated blocking and col- lector decoupling capacitors applications ? wcdma/hsdpa/hspa+/lte wireless handsets and data cards ? dual-mode umts wireless handsets RF7242 3v w-cdma band 2 linear pa module RF7242pcba-410 fully assembled evaluation board ds110803 ? package style: module, 10-pin, 3mmx3mmx1.0mm
2 of 7 RF7242 ds110803 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . absolute maximum ratings parameter rating unit supply voltage in standby mode 6.0 v supply voltage in idle mode 6.0 v supply voltage in operating mode, 50 ? load 6.0 v supply voltage, v bat 6.0 v control voltage, v mode0 , v mode1 3.5 v control voltage, v en 3.5 v rf - input power +10 dbm rf - output power +30 dbm output load vswr (ruggedness) 10:1 operating ambient temperature -30 to +110 c storage temperature -55 to +150 c parameter specification unit condition min. typ. max. recommended operating conditions operating frequency range 1850 1910 mhz v bat +3.0 +3.4 +4.2 v v cc +0.5 1 +3.4 +4.2 v v en 00.5vpa disabled. 1.5 1.8 3.0 v pa enabled. v mode0 , v mode1 0 0.5 v logic ?low?. 1.5 1.8 3.0 v logic ?high?. p out maximum linear output (hpm) 28.5 2,3 dbm high power mode (hpm) v cc =3.4v maximum linear output (hpm) 28.5 4 dbm high power mode (hpm) v cc =3.7v maximum linear output (mpm) 19.0 3 dbm medium power mode (mpm) v cc =1.48v maximum linear output (lpm) 10.0 3 dbm low power mode (lpm) v cc =0.84v ambient temperature -30 +25 +85 c notes: 1. v cc down to 0.5v may be used for backed-off power when using dc/dc converter to conserve battery current. 2. for operation at v cc =3.0v, derate p out by 1.0 db. 3. p out is specified for 3gpp (rel99) modulation. for hspa+ operation, derate p out by 1.0db: hspa+ configuration: 3gpp rel7 subtest 1. 4. p out is specified for 3gpp (hsdpa sub-test 2 and hsupa sub-te st 1) modulation. caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 7 RF7242 ds110803 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. electrical specifications t=+25 ? c, v bat =+3.4v, v en =+1.8v, 50 ? system, w- cdma rel 99 modulation unless otherwise specified. gain 28 db hpm, p out =28.5dbm, v cc =3.4v 26 db mpm, p out ? 19.0dbm, v cc =1.48v 20 db lpm, p out ? 10.0 dbm, v cc =0.84v gain linearity 0.7 db hpm, 19.0dbm ? p out ? 28.5dbm aclr - 5mhz offset -38 dbc hpm, p out =28.5dbm, v cc =3.4v -40 dbc hpm, p out ? 28.25dbm, v cc =3.4v -40 dbc mpm, p out =19.0dbm, v cc =1.48v -40 dbc lpm, p out =10.0dbm, v cc =0.84v aclr - 10mhz offset -52 dbc hpm, p out =28.5dbm, v cc =3.4v -60 dbc mpm, p out =19.0dbm, v cc =1.48v -60 dbc lpm, p out = 10.0dbm, v cc =0.84v pae 47 % hpm, p out =28.5dbm, v cc =3.4v 37 % mpm, p out =19.0dbm, v cc =1.48v 22 % lpm, p out =10.0dbm, v cc =0.84v current drain 443 ma hpm, p out =28.5dbm, v cc =3.4v 145 ma mpm, p out =19.0dbm, v cc =1.48v 54 ma lpm, p out =10.0dbm, v cc =0.84v quiescent current 54 ma hpm, dc only 45 ma mpm, dc only 20 ma lpm, dc only enable current 0.1 ma source or sink current. v en =1.8v. mode current (i mode0 , i mode1 ) 0.1 ma source or sink current. v mode0 , v mode1 =1.8v. leakage current 5.0 15.0 ? adc only. v cc =v bat =4.2v, v en =v mode0 =v mode1 =0.5v. noise power in receive band -138 dbm/hz all power modes, measured at duplex offset frequency (ftx+80mhz). rx: 1930mhz to 1990mhz, p out ? 28.5dbm input impedance 1.5:1 vswr no ext. matching, p out ? 28.5dbm, all modes. harmonic, 2fo -17 dbm p out ? 28.5dbm, all power modes. harmonic, 3fo -25 dbm p out ? 28.5dbm, all power modes. spurious output level -70 dbc all spurious, p out ? 28.5dbm, all conditions, load vswr ? 6:1, all phase angles. insertion phase shift 10 phase shift at 19dbm when switching from hpm to mpm and mpm to lpm at 10dbm. dc enable time 10 ? s dc only. time from v en =high to stable idle current (90% of steady state value). rf rise/fall time 6 ? sp out ? 28.5dbm, all modes. 90% of target, dc settled prior to rf. coupling factor -20 db p out ? 28.5dbm, all modes. coupling accuracy - temp/voltage 0.5 db p out ? 28.5dbm, all modes. -30c ? t ? 85c, v cc as required, referenced to 25c, 3.4v conditions. coupling accuracy - vswr 0.25 db p out ? 28.5dbm, all modes, load vswr=2:1, 0.25db accuracy corresponds to 20db directivity.
4 of 7 RF7242 ds110803 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pin function description 1vbat supply voltage for bias circuitry. 2rf in rf input internally matched to 50 ? and dc blocked. 3vmode1 digital control input for power mode sele ction (see operating modes truth table). 4vmode0 digital control input for power mode sele ction (see operating modes truth table). 5ven digital control input for pa enable and disable (see operating modes truth table). 6cpl_out coupler output. 7gnd this pin must be grounded. 8cpl_in coupler input used for cascading couplers in series. terminate this pin with a 50 ? resistor if not connected to another coupler. 9rf out rf output internally matched to 50 ?? and dc blocked. 10 vcc supply voltage for the first and second stage amplifier which can be connected to battery supply or output of dc-dc converter. pkg base gnd ground connection. the package backside should be soldered to a topside ground pad connecting to the pcb ground plane with multiple ground vias. the pad should have a low thermal resistance and low electrical imped- ance to the ground plane. v en v mode0 v mode1 v bat v cc conditions/comments low low low 3.0v to 4.2v 0.5v to 4.2v power down mode low x x 3.0v to 4.2v 0.5v to 4.2v standby mode high low low 3.0v to 4.2v 0.5v to 4.2v high power mode high high low 3.0v to 4.2v 0.5v to 4.2v medium power mode high high high 3.0v to 4.2v 0.5v to 4.2v low power mode
5 of 7 RF7242 ds110803 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . look up table for v cc optimization package drawing p out hpm v cc mpm v cc lpm v cc 28.25 3.4 28 3.3 27 3.05 26 2.81 25 2.51 24 2.3 23 2.11 22 1.92 21 1.75 20 1.59 19 1.46 1.48 18 1.34 1.37 17 1.24 1.27 16 1.15 1.17 15 1.07 1.08 14 1 1.01 13 0.94 0.94 12 0.89 0.89 11 0.84 0.85 0.88 10 0.8 0.81 0.84 9 0.76 0.77 0.8 8 0.72 0.73 0.76 7 0.69 0.7 0.72 6 0.66 0.67 0.68 5 0.64 0.64 0.65 4 0.62 0.62 0.63 3 0.6 0.6 0.61 2 0.58 0.58 0.59 1 0.56 0.56 0.57 0 0.54 0.54 0.55
6 of 7 RF7242 ds110803 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . preliminary application schematic pcb design requirements pcb surface finish the pcb surface finish used for rfmd's qualification process is electroless nickel, immersio n gold. typical thickness is 3 ? inch to 8 ? inch gold over 180 ? inch nickel. pcb land pattern recommendation pcb land patterns for rfmd components are based on ipc-735 1 standards and rfmd empirica l data. the pad pattern shown has been developed and tested for optimized assembly at rf md. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount processes va ry from company to company, careful process development is recommended. pcb metal land pattern v bat vmode1 vmode0 ven c5 4.7uf v cc c6 4.7uf notes: 1. the 50 ? resistor will be removed if pin 8 is connected to another coupler. j2 rf out j3 cpl out j1 rf in r2 1 50 ? 5 4 1 2 3 6 7 10 9 8 amp bias control & pa/v mode enable pcb metal land pattern (top view)
7 of 7 RF7242 ds110803 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pcb solder mask pattern liquid photo-imageable (lpi) so lder mask is recommended. the solder mask fo otprint will match what is shown for the pcb metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. the center-grounding pad shall also have a solder mask clearance. expansion of the pads to create solder mask clearance can be provided in the master data or reques ted from the pcb fabrication supplier. thermal pad and via design the pcb land pattern has been designed with a thermal pad th at matches the die paddle size on the bottom of the device. thermal vias are required in the pcb layout to effectively conduct heat away from the package. the via pattern has been designed to address thermal, power dissipa tion and electrical requirements of the device as well as accommodating routing strategies. the via pattern used for the rfmd qualification is based on th ru-hole vias with 0.203mm to 0.330mm finished hole size on a 0.5mm to 1.2mm grid pattern with 0.025mm pl ating on via walls. if micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. pcb solder mask pattern
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