irg4pf50w insulated gate bipolar transistor pd - 91710 e c g n-channel features ? optimized for use in welding and switch-mode power supply applications ? industry benchmark switching losses improve efficiency of all power supply topologies ? 50% reduction of eoff parameter ? low igbt conduction losses ? latest technology igbt design offers tighter parameter distribution coupled with exceptional reliability ? lower switching losses allow more cost-effective operation and hence efficient replacement of larger- die mosfets up to 100khz ? of particular benefit in single-ended converters and power supplies 150w and higher ? reduction in critical eoff parameter due to minimal minority-carrier recombination coupled with low on- state losses allow maximum flexibility in device application benefits v ces = 900v v ce(on) typ. = 2.25v @v ge = 15v, i c = 28a parameter max. units v ces collector-to-emitter breakdown voltage 900 v i c @ t c = 25c continuous collector current 51 i c @ t c = 100c continuous collector current 28 a i cm pulsed collector current 204 i lm clamped inductive load current 204 v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy a a a a a 186 mj p d @ t c = 25c maximum power dissipation 200 p d @ t c = 100c maximum power dissipation 78 t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) c absolute maximum ratings w 4/15/98 www.irf.com 1 parameter typ. max. units r q jc junction-to-case CCC 0.64 r q cs case-to-sink, flat, greased surface 0.24 CCC c/w r q ja junction-to-ambient, typical socket mount CCC 40 wt weight 6 (0.21) CCC g (oz) thermal resistance to-247ac
irg4pf50w 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) CCC 160 240 i c = 28a q ge gate - emitter charge (turn-on) CCC 19 29 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) CCC 53 80 v ge = 15v t d(on) turn-on delay time CCC 29 CCC t r rise time CCC 26 CCC t j = 25c t d(off) turn-off delay time CCC 110 170 i c = 28a, v cc = 720v t f fall time CCC 150 220 v ge = 15v, r g = 5.0 w e on turn-on switching loss CCC 0.19 CCC energy losses include "tail" e off turn-off switching loss CCC 1.06 CCC mj see fig. 10, 11, 13, 14 e ts total switching loss CCC 1.25 1.7 t d(on) turn-on delay time CCC 28 CCC t j = 150c, t r rise time CCC 26 CCC i c = 28a, v cc = 720v t d(off) turn-off delay time CCC 280 CCC v ge = 15v, r g = 5.0 w t f fall time CCC 90 CCC energy losses include "tail" e ts total switching loss CCC 3.45 CCC mj see fig. 13, 14 l e internal emitter inductance CCC 13 CCC nh measured 5mm from package c ies input capacitance CCC 3300 CCC v ge = 0v c oes output capacitance CCC 200 CCC pf v cc = 30v see fig. 7 c res reverse transfer capacitance CCC 45 CCC ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 900 CCC CCC v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage ? ? ? ? ? 18 CCC CCC v v ge = 0v, i c = 1.0a d v (br)ces / d t j temperature coeff. of breakdown voltage CCC 0.295 CCC v/c v ge = 0v, i c = 3.5ma CCC 2.25 2.7 i c = 28a v ge = 15v v ce(on) collector-to-emitter saturation voltage CCC 2.74 CCC i c = 60a see fig.2, 5 CCC 2.12 CCC i c = 28a , t j = 150c v ge(th) gate threshold voltage 3.0 CCC 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage CCC -13 CCC mv/c v ce = v ge , i c = 1.0ma g fe forward transconductance ? ? ? ? ? 26 39 CCC s v ce 3 15v, i c = 28a CCC CCC 500 v ge = 0v, v ce = 900v CCC CCC 2.0 v ge = 0v, v ce = 10v, t j = 25c CCC CCC 5.0 ma v ge = 0v, v ce = 900v, t j = 150c i ges gate-to-emitter leakage current CCC CCC 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current v a switching characteristics @ t j = 25c (unless otherwise specified) ns ns ? pulse width 80s; duty factor 0.1%. ? pulse width 5.0s, single shot. notes: ? repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. ( see fig. 13b ) ? v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 5.0 w , (see fig. 13a) ? repetitive rating; pulse width limited by maximum junction temperature.
irg4pf50w www.irf.com 3 fig. 1 - typical load current vs. frequency (for square wave, i=i rms of fundamental; for triangular wave, i=i pk ) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1000 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20 s pulse width ge t = 25 c j t = 150 c j 1 10 100 1000 5 6 7 8 9 10 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5 s pulse width cc t = 25 c j t = 150 c j 0 10 20 30 40 50 60 0.1 1 10 100 f, frequency (khz) a 60% of rated voltage ideal diodes square wave: for both: duty cycle: 50% t = 125?c t = 90? c gate drive as specified sink j power dissipation = 40w triangular wave: clamp voltage: 80% of rated load current ( a )
irg4pf50w 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 25 50 75 100 125 150 0 10 20 30 40 50 60 t , case temperature ( c) maximum dc collector current(a) c -60 -40 -20 0 20 40 60 80 100 120 140 160 1.5 2.0 2.5 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 56 c i = a 28 c i = a 14 c 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
irg4pf50w www.irf.com 5 0 10 20 30 40 50 60 1.0 2.0 3.0 4.0 r , gate resistance total switching losses (mj) g v = 720v v = 15v t = 25 c i = 28a cc ge j c fig. 10 - typical switching losses vs. junction temperature fig. 9 - typical switching losses vs. gate resistance fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 7 - typical capacitance vs. collector-to-emitter voltage ( w ) 0 40 80 120 160 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 28a cc c 1 10 100 0 1000 2000 3000 4000 5000 6000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies g e g c , ce res g c oes ce g c c ies c oes c res -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 720v g ge cc i = a 56 c i = a 28 c i = a 14 c 5.0 w
irg4pf50w 6 www.irf.com fig. 12 - turn-off soa fig. 11 - typical switching losses vs. collector-to-emitter current 0 10 20 30 40 50 60 0 2 4 6 8 10 12 i , collector current (a) total switching losses (mj) c r = ohm t = 150 c v = 720v v = 15v g j cc ge 5.0 w 1 10 100 1000 1 10 100 1000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter voltage (v) i , collector current (a) ce c
irg4pf50w www.irf.com 7 720v 4 x i c @ 25c d.u.t. 50v l v * c ? ? * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor w ill increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v 0 - 720v r l = t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) ? ? ? fig. 14b - switching loss waveforms 50v d river* 1000v d.u.t. i c c v ? ? ? l fig. 14a - switching loss test circuit * driver same type as d.u.t., vc = 720v
irg4pf50w 8 www.irf.com world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t 3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: 171 (k&h bldg.) 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan tel: 81 33 983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 16907 tel: 65 221 8371 data and specifications subject to change without notice. 4/98 case outline and dimensions to-247ac dimensions in millimeters and (inches) conforms to jedec outline to-247ac (to-3p) - d - 5.30 (.209) 4.70 (.185) 3.65 (.143) 3.55 (.140) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 1 23 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) * notes: 1 dimensions & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 d im e n s io n s a r e s h o w n m illim e te r s ( inches ) . 4 c o n fo r m s to je d e c o u tlin e to-247ac. lead assignments 1 - g a t e 2 - c o lle c to r 3 - em it te r 4 - c o lle c to r * longer leaded ( 20m m ) version available ( to-247ad ) to order add "-e" suffix to part number
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