tisp4015h1bj, tisp4020h1bj, tisp4040h1bj very low voltage bidirectional overvoltage protectors advance information 1 august 1999 - revised october 2000 copyright ? 2000, power innovations limited, u k information relates to new products in the sampling or preproduction phase of development. characteristic data and other specifications are subject to change without notice . selv telecommunication line overvoltage protectio n a d v a n c e i n f o r m a t i o n a bourns compan y l digital line signal level protection ? isdn ? xdsl l safety extra low voltage, selv, value s l low capacitance ? 5 0 pf for ?4040 through to 8 5 pf for ?401 5 l high current ?h? series for itu-t k20, fcc part 68 and gr-1089-cor e devic e v dr m v v (bo ) v ?401 5 5 1 5 ?402 0 8 2 0 ?404 0 2 5 4 0 wave shap e standar d i ts p a 2/1 0 s gr-1089-cor e 50 0 8/2 0 s iec 61000-4- 5 40 0 10/16 0 s fcc part 6 8 20 0 10/70 0 s itu-t k20/21 fcc part 6 8 15 0 10/56 0 s fcc part 6 8 12 0 10/100 0 s gr-1089-cor e 10 0 l 10 0 a functional replacements for: device typ e functional replacemen t p0080sx (february 1998 issue ) tisp4015h1b j p0080s x tisp4020h1b j p0300s x tisp4040h1b j smp100-8, smp75-8 (see note 1 ) tisp4020h1b j note 1. the tisp4020h1bj has a higher a.c. v (bo ) than smp75-8, but has the same impulse v (bo ) . descriptio n these devices are designed to limit overvoltages on digital telecommunication lines. overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. a single device provides 2-point protection and is typically used for the protection of transformer windings and low voltage electronics . the protector consists of a symmetrical voltage-triggered bidirectional thyristor. overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state condition. this low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. the device switches off when the diverted current falls below the holding current value . how to orde r devic e packag e carrie r order a s tisp40xxh 1 bj (j-bend do-214aa/smb ) embossed tape reele d tisp40xxh1bj r tisp40xxh 1 bj (j-bend do-214aa/smb ) bulk pac k tisp40xxh1b j insert xx value corresponding to protection voltages of 1 5 v, 2 0 v and 4 0 v device symbo l t r sd4xaa t erminals t and r correspond to the alternative line designators of a and b 1 2 t(a) r(b) smbj package (top view) mdxxbg
tisp4015h1bj, tisp4020h1bj, tisp4040h1b j very low voltag e bidirectional overvoltage protector s 2 august 1999 - revised october 200 0 advance information a d v a n c e i n f o r m a t i o n absolute maximum ratings, t a = 2 5 c (unless otherwise noted ) ratin g symbo l valu e uni t repetitive peak off-state voltage ?4015 ?4020 ?4040 v dr m 5 8 2 5 v non-repetitive peak on-state pulse current(see notes 2 and 3 ) i ts p a 2/1 0 s(telcordia gr-1089-core, 2/1 0 s voltage wave shape ) 8/2 0 s (iec 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current ) 10/16 0 s (fcc part 68, 10/16 0 s voltage wave shape ) 5/31 0 s (itu-t k20/21, 10/70 0 s voltage wave shape ) 5/32 0 s(fcc part 68, 9/72 0 s voltage wave shape ) 10/56 0 s (fcc part 68, 10/56 0 s voltage wave shape ) 10/100 0 s(telcordia gr-1089-core, 10/100 0 s voltage wave shape ) 50 0 40 0 20 0 15 0 15 0 12 0 10 0 non-repetitive peak on-state current(see notes 2 and 3 ) i ts m a 2 0 ms (5 0 hz) full sine wave 16. 7 ms (6 0 hz) full sine wave 0. 2 s 50/6 0 hz a.c . 2 s 50/6 0 hz a.c. 100 0 s 5 0 hz/6 0 hz a.c . 55 60 25 12 2 initial rate of rise of current (2/10 waveshape ) di/d t 30 0 a/ s maximum junction temperatur e t j m 15 0 c storage temperature rang e t st g -65 to +15 0 c notes: 2. initially the device must be in thermal equilibrium with t j = 2 5 c . 3. the surge may be repeated after the device returns to its initial conditions . electrical characteristics for the r and t terminals, t a = 2 5 c paramete r test condition s mi n ty p ma x uni t i dr m repetitive peak off-state current v d = v dr m 5 a v (bo ) breakover voltag e di/d t = 0. 8 a/m s ?4015 ?4020 ?4040 15 20 4 0 v v (bo ) impulse breakover voltag e dv/d t 100 0 v/s, linear voltage ramp, maximum ramp valu e = 50 0 v di/d t = 2 0 a/s, linear current ramp, maximum ramp valu e = 1 0 a ?4015 ?4020 ?4040 20 25 4 5 v i (b o ) breakover curren t di/d t = 0. 8 a/m s 0. 8 a i d off-state curren t v d = 4 v v d = 6 v v d = 2 2 v ?4015 ?4020 ?4040 2 a i h holding curren t i t = 5 a, di/d t = +/-3 0 ma/m s 5 0 m a
3 august 1999 - revised october 2000 tisp4015h1bj, tisp4020h1bj, tisp4040h1bj very low voltage bidirectional overvoltage protectors advance information a d v a n c e i n f o r m a t i o n c of f off-state capacitanc e f = 1 mhz, v d = 1 v rms, v d = 0 f = 1 mhz, v d = 1 v rms, v d = 1 v f = 1 mhz, v d = 1 v rms, v d = 2 v ?4015 ?4020 ?4040 ?4015 ?4020 ?4040 ?4015 ?4020 ?4040 95 85 60 90 80 55 85 75 5 0 p f thermal characteristic s paramete r test condition s mi n ty p ma x uni t r q j a junction to free air thermal resistanc e eia/jesd51-3 pcb, i t = i tsm(1000 ) , t a = 2 5 c, (see note 4 ) 11 5 c/ w 26 5 mm x 21 0 mm populated line card, 4-layer pcb, i t = i tsm(1000 ) , t a = 2 5 c 5 2 note 4: eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths . electrical characteristics for the r and t terminals, t a = 2 5 c (continued ) paramete r test condition s mi n ty p ma x uni t
tisp4015h1bj, tisp4020h1bj, tisp4040h1b j very low voltag e bidirectional overvoltage protector s 4 august 1999 - revised october 200 0 advance information a d v a n c e i n f o r m a t i o n parameter measurement informatio n applications informatio n transformer protectio n the inductance of a transformer winding reduces considerably when the magnetic core material saturates. saturation occurs when the magnetising current through the winding inductance exceeds a certain value. it should be noted that this is a different current to the transformed current component from primary to secondary. the standard inductance-current relationship is : where: l = unsaturated inductance value in h d i = current change in a d t = time period in s for current change di e = winding voltage in v re-arranging this equation and working large d changes to saturation gives the useful circuit relationship of : a transformer winding volt-second value for saturation gives the designer an idea of circuit operation under overvoltage conditions. the volt-second value is not normally quoted, but most manufacturers should provide figure 1. voltage-current characteristic for t and r terminal s all measurements are referenced to the r termina l -v v drm i drm v d i h i tsm i tsp v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) v drm i drm v d i d i h i tsm i tsp -i quadrant iii switching characteristic pm4ac el d i d t ---- - ? ? ? ? = e d t l d i =
5 august 1999 - revised october 2000 tisp4015h1bj, tisp4020h1bj, tisp4040h1bj very low voltage bidirectional overvoltage protectors advance information a d v a n c e i n f o r m a t i o n it on request. a 5 0 vs winding will support rectangular voltage pulses of 5 0 v for 1 s, 2 5 v for 2 s, 1 v for 5 0 s and so on. once the transformer saturates, primary to secondary coupling will be lost and the winding resistance, rw, shunts the overvoltage protector, th1, see figure 2 . this saturated condition is a concern for long duration impulses and a.c. fault conditions because the current capability of the winding wire may be exceeded. for example, if the on-state voltage of the protector is 1 v and the winding resistance is 0. 2 w , the winding would bypass a current of 1/0.2 = 5 a, even through the protector was in the low voltage condition . figure 3 shows a generic protection arrangement. resistors r1 and r2, together with the overcurrent protection, prevent excessive winding current flow under a.c. conditions. alternatively, a split winding could be used with a single resistor connecting the windings. this resistor could be by-passed by a small capacitor to reduce signal attenuation . overcurrent protection upstream from the overvoltage protector can be fuse, ptc or thick film resistor based. for very high frequency circuits, fuse inductance due to spiral wound elements may need to be evaluated . tis p ? voltage selectio n normally the working voltage value of the protector, v dr m , would be chosen to be just greater than the peak signal amplitude over the equipment temperature range. this would give the lowest possible protection voltage, v (bo ) . this would minimise the peak voltage applied to the transformer winding and increase the time to core saturation . in high frequency circuits there are two further considerations. low voltage protectors have a higher capacitance than high voltage protectors. so a higher voltage protector might be chosen specifically to reduce the protector capacitive effects on the signal . low energy short duration spikes will be clipped by the protector. this will extend the spike duration and the data loss time. a higher protector voltage will reduce the data loss time. generally this will not be a significant factor for inter-conductor protection. however, clipping is significant for protection to ground, where there is continuous low-level a.c. common mode induction. in some cases the induced a.c. voltage can be over 1 0 v. repetitive clipping at the induced a.c. peaks by the protector would cause severe data corruption. the expected a.c. voltage induced should be added to the maximum signal level for setting the protector v dr m value. figure 2. transformer saturatio n figure 3. transformer winding protectio n ai4xao th1 t1 unsaturated l rw th1 t1 saturated th1 signal t1 over- current protection line r1 r2 ai4xan
tisp4015h1bj, tisp4020h1bj, tisp4040h1b j very low voltag e bidirectional overvoltage protector s 6 august 1999 - revised october 200 0 advance information a d v a n c e i n f o r m a t i o n mechanical dat a smbj (do-214aa ) plastic surface mount diode packag e this surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly. smb all linear dimensions in millimeters mdxxbha 5,59 5,21 2,40 2,00 2,10 1,90 1,52 0,76 4,57 4,06 3,94 3,30 2 index mark (if needed) 2,32 1,96 0,20 0,10
7 august 1999 - revised october 2000 tisp4015h1bj, tisp4020h1bj, tisp4040h1bj very low voltage bidirectional overvoltage protectors advance information a d v a n c e i n f o r m a t i o n mechanical dat a recommended printed wiring footprint . device symbolizatio n devices are coded as below. as the device parameters are symmetrical, terminal 1 is not identified . carrier informatio n devices are shipped in one of the carriers below. unless a specific method of shipment is specified by the customer, devices will be shipped in the most practical carrier. for production quantities the carrier will be embossed tape reel pack. evaluation quantities may be shipped in bulk pack or embossed tape. devic e symoblizatio n tisp4015h1b j 4015h 1 tisp4020h1b j 4020h 1 tisp4040h1b j 4040h 1 carrie r standard quantit y embossed tape reele d 3 00 0 bulk pac k 2 00 0 smb pad size all linear dimensions in millimeters 2.40 2.16 2.54 mdxxbi
tisp4015h1bj, tisp4020h1bj, tisp4040h1b j very low voltag e bidirectional overvoltage protector s 8 august 1999 - revised october 200 0 advance information a d v a n c e i n f o r m a t i o n mechanical dat a tape dimension s smb package single-sprocket tape all linear dimensions in millimeters direction of feed 0,40 max. 4,5 max. 0 min. 12,30 11,70 1,65 1,55 4,10 3,90 2,05 1,95 ? 1,5 min. 7,90 8,10 embossment carrier tape 5,55 5,45 1,85 1,65 cover tape 8,20 max. notes: a. the clearance between the component and the cavity must be within 0,05 mm min. to 0,65 mm max. so that the component cannot rotate more than 20 within the determined cavity. b. taped devices are supplied on a reel of the following dimensions:- reel diameter: 330 3,0 mm reel hub diameter 75 mm min. reel axial hole: 13,0 0,5 mm c. 3000 devices are on a reel. mdxxbj 20 typical component cavity centre line maximium component rotation typical component centre line index mark (if needed)
9 august 1999 - revised october 2000 tisp4015h1bj, tisp4020h1bj, tisp4040h1bj very low voltage bidirectional overvoltage protectors advance information a d v a n c e i n f o r m a t i o n important notic e power innovations limited (pi) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current . pi warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with pi's standard warranty. testing and other quality control techniques are utilized to the extent pi deems necessary to support th is warranty. specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements . pi assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of pi covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. pi semiconductor products are not designed, intended, authorised, or warranted to be suitable for use in life-support applications, devices or systems . copyright ? 2000, power innovations limite d
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