unisonic technologies co., ltd mje13009d npn silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2010 unisonic technologies co., ltd qw-r203-041.a high voltage fast-switching npn power transistor ? description the utc mje13009d is a high voltage fast-switching npn power transistor. it is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. the utc mje13009d is intended to be used in a energy-saving lights electronic ballast, high frequency switching power supplies, high frequency power transforms or common power amplifiers, etc. ? features * high breakdown voltage * high current capability * high switching speed * high reliability * rohs-compliant product ? internal schematic diagram e (3) b (1) c (2) ? ordering information ordering number pin assignment lead free plating halogen free package 1 2 3 packing mje13009dl-ta3-t MJE13009DG-TA3-T to-220 b c e tube
mje13009d npn silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r203-041.a ? absolute maximum ratings (t c =25c) parameter symbol ratings unit collector- emitter voltage (v be =-1.5v) v cev 700 v collector-emitter voltage (i b =0) v ceo 400 v emitter-base voltage v ebo 9 v dc i c 12 a collector current pulse(note 2) i cm 24 a dc i b 6 a base current pulse(note 2) i bm 12 a dc i e 18 a emitter current pulse(note 2) i em 36 a total power dissipation 2 w linear derating factor above t a =25c p d 16 mw/c total power dissipation 100 w linear derating factor above t c =25c p d 800 mw/c operating junction temperature t j -65 ~ +150 c storage temperature t stg -65 ~ +150 c 1. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolu te maximum ratings are stress ratings only and functional device operat ion is not implied. notes: 2. pulse test: pulse width = 5.0 ms, duty cycle < 10%. ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c /w junction to case jc 3.13 c /w ? electrical characteristics (t c =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics (note) collector-emitter sustaining voltage v ceo(sus) i c =10ma, i b =0 400 v 1 ma collect cut-off current i cev v cev =rated value, v be(off) = -1.5v t c =100c 5 ma emitter cut-off current i ebo v eb =9v, i c =0 1 ma on characteristics (note) v ce =5v, i c =5a 8 40 dc current gain h fe v ce =5v, i c =8a 6 30 i c =5a, i b =1a 1 v 1.5 v i c =8a, i b =1.6a t c =100c 2 v collector-emitter sa turation voltage v ce(sat) i c =12a, i b =3a 3 v i c =5a, i b =1a 1.2 v 1.6 v base -emitter saturation voltage v be(sat) i c =8a, i b =1.6a t c =100c 1.5 v on characteristics (note) current gain bandwidth product f t v ce =10v, i c =500ma, f=1mh z 4 mh z output capacitance c ob v cb =10v, i c =0, f=0.1mh z 180 pf
mje13009d npn silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r203-041.a ? switching characteristics resistive load delay time t d 0.06 0.1 s rise time t r 0.45 1 s storage time t s 1.3 3 s fall time t f v cc =125v, i c =8a, i b1 =i b2 =1.6a, t p =25 s, duty cycle 1% 0.2 0.7 s inductive load, clamped voltage storage time t s 0.92 2.3 s crossover time t c i c =8a, v clamp =300v,i b1 =1.6a, v be(off) =5v, t c =100c 0.12 0.7 s note: pulse test: pulse width=300 s, duty cycle=2%.
mje13009d npn silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r203-041.a ? typical characteristics 200 400 600 800 1000 collector-emitter voltage, v cev (v) 0 0 20 60 80 100 120 40 collector current, i c ( a) collector current vs. co llector-emitter voltage 0 200 600 800 1000 1200 400 collector current vs. collector-base voltage 0 200 400 600 800 1000 collector-base voltage, v cb (v) collector current, i c ( a) collector current, i c (ma) base current, i b (ma) 1 23456 collector-emitter voltage, v ce (v) 0 0 100 collector current vs. collector- emitter voltage 200 300 400 500 600 i b =5.75ma i b =10.75ma i b =15.75ma i b =20.75ma i b =25.75ma 789 1 23456 collector-emitter voltage, v ce (v) 0 0 10 20 25 15 collector current vs. collector- emitter voltage 5 i b =248 a i b =448 a i b =648 a i b =848 a i b =1048 a
mje13009d npn silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r203-041.a ? typical characteristics (cont.) 123 78 collector-emitter voltage, v ce (v) 0 0 2 4 8 10 12 6 collector current, i c (a) collector current vs. collector- emitter voltage 456 i b =156ma i b =256ma i b =356ma i b =456ma i b =556ma i b =656ma i b =756ma i b =856ma 123456 collector-emitter voltage, v ce (v) 0 0 1 2 4 5 6 3 collector current, i c (a) collector current vs. collector- emitter voltage i b =129ma i b =229ma i b =329ma i b =429ma 78910 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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