features low voltage operation. superior cross modulation characteristics. table 1 absolute maximum ratings (ta = 25?) item symbol rating unit drain to source voltage v ds 12 v gate 1 to source voltage v g1s ?0 v gate 2 to source voltage v g2s ?0 v drain current i d 35 ma channel power dissipation pch 150 mw channel temperature tch 125 c storage temperature tstg ?5 to +125 c mpak-4 1. source 2. gate 1 3. gate 2 4. drain 1 4 3 2 3SK234 silicon n channel dual gate mos fet vhf tv tuner rf amplifier
table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test condition drain to source breakdown voltage v (br)dsx 12v i d = 200 ?, v g1s = ? v, v g2s = ? v gate 1 to source breakdown voltage v (br)g1ss 10v i g1 = ?0 ?, v g2s = v ds = 0 gate 2 to source breakdown voltage v (br)g2ss 10v i g2 = ?0 ?, v g1s = v ds = 0 gate 1 cutoff current i g1ss ?00 na v g1s = ? v, v g2s = v ds = 0 gate 2 cutoff current i g2ss ?00 na v g2s = ? v, v g1s = v ds = 0 drain current i dss 0 1mav ds = 4 v, v g1s = 0, v g2s = 3 v gate 1 to source cutoff voltage v g1s(off) 0 +1.0 v v ds = 6 v, v g2s = 3 v, i d = 100 ? gate 2 to source cutoff voltage v g2s(off) 0 +1.0 v v ds = 6 v, v g1s = 3 v, i d = 100 ? forward transfer admittance |y fs | 13 17 ms v ds = 6 v, v g2s = 3 v, i d = 10 ma, f = 1 khz input capacitance ciss 2.5 3.5 4.5 pf v ds = 6 v, v g2s = 3 v, i d = 10 ma, f = 1 mhz output capacitance coss 1.0 1.4 1.8 pf reverse transfer capacitance crss 0.018 0.03 pf power gain pg 22 27.6 db v ds = 4 v, v g2s = 3 v, i d = 10 ma, f = 200 mhz noise figure nf 1.77 2.7 db 3SK234
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