vishay semiconductors tlmo/s/y300. document number 83224 rev. 1.4, 25-sep-07 www.vishay.com 1 low current smd led plcc-2 features ? smd led with exceptional brightness ? compatible with automatic placement equipment ? eia and ice standard package ? compatible with infrared, vapor phase and wave solder processes according to cecc ? available in 8 mm tape ? low profile package ? non-diffused lens: exce llent for coupling to light pipes and backlighting ? very low power consumption ? luminous intensity ratio in one packaging unit i vmax /i vmin 2.0 ? esd withstand voltage up to 1 kv ? lead (pb)-free device 19225 e3 description these new devices have been designed to meet the increasing demand for allngap based low current smd leds. the package of the tlm.300. is the plcc-2 package. it consists of a lead frame which is embedded in a white thermoplast. the reflector inside this package is filled up with clear epoxy. product group and package data ? product group: led ? package: smd plcc-2 ? product series: low current ? angle of half intensity: 60 applications ? automotive: backlighting in dashboards and switches ? telecommunication: indicator and backlighting in telephone and fax ? indicator and backlight for audio and video equipment ? indicator and backlight for battery driven equipment ? indicator and backlight in office equipment ? flat backlight for lcds , switches and symbols ? general use parts table part color, luminous intensity technology tlms3000-gs08 red, i v = 2.8 mcd (typ.) allngap tlms3000-gs18 red, i v = 2.8 mcd (typ.) allngap tlms3001-gs08 red, i v = 4.5 mcd (typ.) allngap tlms3001-gs18 red, i v = 4.5 mcd (typ.) allngap TLMO3000-GS08 orange, i v = 5.6 mcd (typ.) alingap tlmo3000-gs18 orange, i v = 5.6 mcd (typ.) alingap tlmo3001-gs08 orange, i v = 9.0 mcd (typ.) alingap tlmo3001-gs18 orange, i v = 9.0 mcd (typ.) alingap tlmy3000-gs08 ye l l o w, i v = 4.5 mcd (typ.) alingap tlmy3000-gs18 ye l l o w, i v = 4.5 mcd (typ.) alingap tlmy3001-gs08 ye l l o w, i v = 7.1 mcd (typ.) alingap tlmy3001-gs18 ye l l o w, i v = 7.1 mcd (typ.) alingap
www.vishay.com 2 document number 83224 rev. 1.4, 25-sep-07 vishay semiconductors tlmo/s/y300. note: 1) t amb = 25 c, unless otherwise specified note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmax /i vmin 2.0 note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmax /i vmin 2.0 absolute maximum ratings 1) tlm.300. parameter test condition symbol value unit reverse voltage v r 6v dc forward current i f 15 ma surge forward current t p 10 s i fsm 0.1 a power dissipation t amb 100 c p v 40 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ ambient mounted on pc board (pad size > 16 mm 2 ) r thja 400 k/w optical and electrical characteristics 1) tlms300., red parameter test condition part symbol min typ. max unit luminous intensity 2) i f = 2 ma tlms3000 i v 2.5 mcd i f = 10 ma tlms3000 i v 20 mcd i f = 2 ma tlms3001 i v 4.0 12.5 mcd dominant wavelength i f = 2 ma d 624 636 nm peak wavelength i f = 2 ma p 635 nm angle of half intensity i f = 2 ma ? 60 deg forward voltage i f = 2 ma v f 1.8 2.2 v reverse voltage i r = 10 a v r 615 v optical and electrical characteristics 1) tlmo300., orange parameter test condition part symbol min typ. max unit luminous intensity 2) i f = 2 ma tlmo3000 i v 5.0 mcd i f = 10 ma tlmo3000 i v 50 mcd i f = 2 ma tlmo3001 i v 6.3 20 mcd dominant wavelength i f = 2 ma d 600 609 nm peak wavelength i f = 2 ma p 610 nm angle of half intensity i f = 2 ma ? 60 deg forward voltage i f = 2 ma v f 1.8 2.2 v reverse voltage i r = 10 a v r 615 v
document number 83224 rev. 1.4, 25-sep-07 www.vishay.com 3 vishay semiconductors tlmo/s/y300. note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmax /i vmin 2.0 typical characteristics t amb = 25 c, unless otherwise specified optical and electrical characteristics 1) tlmy300., yellow parameter test condition part symbol min typ. max unit luminous intensity 2) i f = 2 ma tlmy3000 i v 4.0 mcd i f = 10 ma tlmy3000 i v 50 mcd i f = 2 ma tlmy3001 i v 6.3 20 mcd dominant wavelength i f = 2 ma d 581 594 nm peak wavelength i f = 2 ma p 585 nm angle of half intensity i f = 2 ma ? 60 deg forward voltage i f = 2 ma v f 1.8 2.2 v reverse voltage i r = 10 a v r 615 v figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature 0 10 20 30 40 50 p v - po w er dissipation (m w ) t am b - am b ient temperat u re (c) 1 8 253 100 8 0 60 40 20 0 0 5 10 15 20 25 i - for w ard c u rrent (ma) f 1 8 254 100 8 0 60 40 20 0 t am b -am b ient temperat u re (c) figure 3. rel. luminous intensity vs. angular displacement figure 4. forward current vs. forward voltage 0.4 0.2 0 0.2 0.4 0.6 95 10319 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 i v rel - relati v e l u mino u s intensity 1 10 100 1.0 1.5 2.0 2.5 3.0 v f - for w ard v oltage ( v ) 95 10 8 7 8 i f - for w ard c u rrent (ma)
www.vishay.com 4 document number 83224 rev. 1.4, 25-sep-07 vishay semiconductors tlmo/s/y300. figure 5. relative intensity vs. wavelength figure 6. rel. luminous intens ity vs. ambient temperature figure 7. forward voltage vs. ambient temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 540 560 5 8 0 600 620 640 660 6 8 0 700 - w a v elength (nm) 1 8 266 i - relati v e l u mino u s intensity v rel orange red yello w 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 - 40 - 20 0 20 40 60 8 0 100 t am b - am b ient temperat u re (c) 1 8 251 i - relati v e l u mino u s intensity v rel yello w orange red 1.65 1.70 1.75 1. 8 0 1. 8 5 1.90 1.95 2.00 - 40 - 20 0 20 40 60 8 0 100 t am b - am b ient temperat u re (c) 1 8 252 v - for w ard v oltage ( v ) frel yello w orange red figure 8. forward current vs. pulse length 10 100 1000 0.01 0.10 1.00 10.00 100.00 t p - p u lse d u ration (ms) 17557 i - for w ard c u rrent (a) f t p /t= 0.01 0.05 0.2 0.5 1 0.02 0.1
document number 83224 rev. 1.4, 25-sep-07 www.vishay.com 5 vishay semiconductors tlmo/s/y300. package dimensions in millimeters 95 11314-1 mounting pad layout 3.5 0.2 0.9 1.75 0.10 pin identification 2. 8 + 0.15 2.2 ? 2.4 3 + 0.15 1.2 2.6 (2. 8 ) 1.6 (1.9) 4 4 area co v ered w ith solder resist technical dra w ings according to di n specifications dra w ing- n o.: 6.541-5025.01-4 iss u e: 8 ; 22.11.05 ca
www.vishay.com 6 document number 83224 rev. 1.4, 25-sep-07 vishay semiconductors tlmo/s/y300. ozone depletin g substances poli cy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employee s and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cle an air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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