vishay az23-series document number 85759 rev. 1.4, 08-jul-04 vishay semiconductors www.vishay.com 1 12 3 18070 small signal zener diodes, dual features ? these diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designa- tion dz23, the single diode sot-23 case with the type designation bzx84c, and the single diode sod-123 case with the type designation bzt52c. dual silicon planar zener diodes, common anode the zener voltages are graded according to the international e 24 standard. the parameters are valid for both diodes in one case. ? v z and ? r zj of the two diodes in one case is 5 % mechanical data case: sot-23 plastic case weight: approx. 8.8 mg packaging codes/options: gs18 / 10 k per 13 " reel, (8 mm tape), 10 k/box gs08 / 3 k per 7 " reel, (8 mm tape), 15 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified 1) device on fiberglass substrate, see layout thermal characteristics t amb = 25 c, unless otherwise specified 1) device on fiberglass substrate, see layout parameter test condition symbol value unit power dissipation p tot 300 1) mw parameter test condition symbol value unit thermal resistance junction to ambient air r thja 420 1) c/w junction temperature t j 150 c storage temperature range t s - 65 to + 150 c
www.vishay.com 2 document number 85759 rev. 1.4, 08-jul-04 vishay az23-series vishay semiconductors electrical characteristics 1) tested with pulses tp = 5 ms partnumber marking code zener voltage range 1) dynamic resistance te s t current temperature coefficient of zener voltage reverse voltage v z @ i zt r zj @ i zt = 5 ma, f = 1 khz r zj @ i zt = 1 ma, f = 1 khz i zt vz @ i zt v r @ i r = 100 na v ? ma 10 -4 /c v min max min max az23c2v7 d1 2.5 2.9 75 (<83) <500 5 -9 -4 - az23c3v0 d2 2.8 3.2 80 (<95) <500 5 -9 -3 - az23c3v3 d3 3.1 3.5 80 (<95) <500 5 -8 -3 - az23c3v6 d4 3.4 3.8 80 (<95) <500 5 -8 -3 - az23c3v9 d5 3.7 4.1 80 (<95) <500 5 -7 -3 - az23c4v3 d6 4 4.6 80 (<95) <500 5 -6 -1 - az23c4v7 d7 4.4 5 70 (<78) <500 5 -5 2 - az23c5v1 d8 4.8 5.4 30 (<60) <480 5 -3 4 >0.8 az23c5v6 d9 5.2 6 10 (<40) <400 5 -2 6 >1 az23c6v2 d10 5.8 6.6 4.8 (<10) <200 5 -1 7 >2 az23c6v8 d11 6.4 7.2 4.5 (<8) <150 5 2 7 >3 az23c7v5 d12 7 7.9 4 (<7) <50 5 -3 7 >5 az23c8v2 d13 7.7 8.7 4.5 (<7) <50 5 4 7 >6 az23c9v1 d14 8.5 9.6 4.8 (<10) <50 5 5 8 >7 az23c10 d15 9.4 10.6 5.2 (<15) <70 5 5 8 >7.5 az23c11 d16 10.4 11.6 6 (<20) <70 5 5 9 >8.5 az23c12 d17 11.4 12.7 7 (<20) <90 5 6 9 >9 az23c13 d18 12.4 14.1 9 (<25) <110 5 7 9 >10 az23c15 d19 13.8 15.6 11 (<30) <110 5 7 9 >11 az23c16 d20 15.3 17.1 13 (<40) <170 5 8 9.5 >12 az23c18 d21 16.8 19.1 18 (<50) <170 5 8 9.5 >14 az23c20 d22 18.8 21.2 20 (<50) <220 5 8 10 >15 az23c22 d23 20.8 23.3 25 (<55) <220 5 8 10 >17 az23c24 d24 22.8 25.6 28 (<80) <220 5 8 10 >18 az23c27 d25 25.1 28.9 30 (<80) <250 5 8 10 >20 az23c30 d26 28 32 35 (<80) <250 5 8 10 >22.5 az23c33 d27 31 35 40 (<80) <250 5 8 10 >25 az23c36 d28 34 38 40 (<90) <250 5 8 10 >27 az23c39 d29 37 41 50 (<90) <300 5 10 12 >29 az23c43 d30 40 46 60 (<100) <700 5 10 12 >32 az23c47 d31 44 50 70 (<100) <750 5 10 12 >35 az23c51 d32 48 54 70 (<100) <750 5 10 12 >38
vishay az23-series document number 85759 rev. 1.4, 08-jul-04 vishay semiconductors www.vishay.com 3 electrical characteristics 1) tested with pulses tp = 5 ms partnumber marking code zener voltage range 1) dynamic resistance test current temperature coefficient of zener voltage reverse voltage v z @ i zt r zj @ i zt = 5 ma, f = 1 khz r zj @ i zt = 1 ma, f = 1 khz i zt vz @ i zt v r @ i r = 100 na v ? ma 10 -4 /c v min max min max az23b2v7 d1 2.65 2.75 75 (<83) <500 5 -9 -4 - az23b3v0 d2 2.94 3.06 80 (<95) <500 5 -9 -3 - az23b3v3 d3 3.23 3.37 80 (<95) <500 5 -8 -3 - az23b3v6 d4 3.53 3.67 80 (<95) <500 5 -8 -3 - az23b3v9 d5 3.82 3.98 80 (<95) <500 5 -7 -3 - az23b4v3 d6 4.21 4.39 80 (<95) <500 5 -6 -1 - az23b4v7 d7 4.61 4.79 70 (<78) <500 5 -5 2 - az23b5v1 d8 5 5.2 30 (<60) <480 5 -3 4 >0.8 az23b5v6 d9 5.49 5.71 10 (<40) <400 5 -2 6 >1 az23b6v2 d10 6.08 6.32 4.8 (<10) <200 5 -1 7 >2 az23b6v8 d11 6.66 6.94 4.5 (<8) <150 5 2 7 >3 az23b7v5 d12 7.35 7.65 4 (<7) <50 5 -3 7 >5 az23b8v2 d13 8.04 8.36 4.5 (<7) <50 5 4 7 >6 az23b9v1 d14 8.92 9.28 4.8 (<10) <50 5 5 8 >7 az23b10 d15 9.8 10.2 5.2 (<15) <70 5 5 8 >7.5 az23b11 d16 10.8 11.2 6 (<20) <70 5 5 9 >8.5 az23b12 d17 11.8 12.2 7 (<20) <90 5 6 9 >9 az23b13 d18 12.7 13.3 9 (<25) <110 5 7 9 >10 az23b15 d19 14.7 15.3 11 (<30) <110 5 7 9 >11 az23b16 d20 15.7 16.3 13 (<40) <170 5 8 0.5 >12 az23b18 d21 17.6 18.4 18 (<50) <170 5 8 0.5 >14 az23b20 d22 19.6 20.4 20 (<50) <220 5 8 10 >15 az23b22 d23 21.6 22.4 25 (<55) <220 5 8 10 >17 az23b24 d24 23.5 24.5 28 (<80) <220 5 8 10 >18 az23b27 d25 26.5 27.5 30 (<80) <250 5 8 10 >20 az23b30 d26 29.4 30.6 35 (<80) <250 5 8 10 >22.5 az23b33 d27 32.3 33.7 40 (<80) <250 5 8 10 >25 az23b36 d28 35.3 36.7 40 (<90) <250 5 8 10 >27 az23b39 d29 38.2 39.8 50 (<90) <300 5 10 12 >29 az23b43 d30 42.1 43.9 60 (<100) <700 5 10 12 >32 az23b47 d31 46.1 47.9 70 (<100) <750 5 10 12 >35 az23b51 d32 50 52 70 (<100) <750 5 10 12 >38
www.vishay.com 4 document number 85759 rev. 1.4, 08-jul-04 vishay az23-series vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) figure 1. forward characteristics figure 2. admissible power dissipation vs. ambient temperature figure 3. dynamic resistance vs. zener current 18114 18115 18120 figure 4. thermal differential resistance vs. zener voltage figure 5. dynamic resistance vs. zener voltage figure 6. temperature dependence of zener voltage vs. zener voltage c/w 18121 18122 c 18123
vishay az23-series document number 85759 rev. 1.4, 08-jul-04 vishay semiconductors www.vishay.com 5 figure 7. change of zener voltage vs. junction temperature figure 8. temperature dependence of zener voltage vs. zener voltage figure 9. change of zener voltage vs. junction temperature 18124 c 18125 18126 figure 10. change of zener voltage from turn-on up to the point of thermal equilibrium vs. zener voltage figure 11. change of zener voltage from turn-on up to the point of thermal equilibrium vs. zener voltage 18127 18128
www.vishay.com 6 document number 85759 rev. 1.4, 08-jul-04 vishay az23-series vishay semiconductors 18111 figure 12. breakdown characteristics 18112 figure 13. breakdown characteristics
vishay az23-series document number 85759 rev. 1.4, 08-jul-04 vishay semiconductors www.vishay.com 7 package dimensions in mm (inches) 18113 figure 14. breakdown characteristics 2.0 (0.079) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) 0.52 (0.020) 1 2 3 17418 2.8 (.110) 3.1 (.122) 0.4 (.016) 0.95 (.037) 0.95 (.037) 0.1 (.004) max. 1.20(.047) 1.43 (.056) 0.4 (.016) 0.4 (.016) 0.098 (.005) 0.175 (.007) 0.95 (.037) 1.15 (.045) 2.35 (.092) 2.6 (.102) iso method e mounting pad layout
www.vishay.com 8 document number 85759 rev. 1.4, 08-jul-04 vishay az23-series vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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