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  this document is intended as a spice modeling guideline and does not constitute a commercial product data sheet. designers sho uld refer to the appropriate data sheet of the same number fo r guaranteed specific ation limits. 1 www.visha y .com v ishay siliconix spice device model SUM23N15-73 document number: 72331 s-60543 ? n-channel 150-v (d-s), 175 c mosfet characteristics ? n-channel vertical dmos ? macro model (subcircuit model) ? level 3 mos ? apply for both linear and switching application ? accurate over the ? 55 to 125 c temperature range ? model the gate charge, transient, and diode reverse recovery characteristics description the attached spice model descri bes the typical electrical characteristics of the n-channel ve rtical dmos. the subcircuit model is extracted and optimized over the ? 55 to 125 c temperature ranges under the puls ed 0-v to 10-v gate drive. the saturated output impedance is best fit at the gate bias near the threshold voltage. a novel gate-to-drain feedback capac itance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched c gd model. all model parameter values are optimized to provide a best fit to the m easured electrical data and are not intended as an exact physical interpretation of the device. subcircuit model schematic
2 v ishay siliconix spice device model SUM23N15-73 www.visha y .com document number: 72331 s-60543 ? c unless otherwise noted) parameter symbol test condition simulated data measured data unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 3 v on-state drain current a i d(on) v ds 5 v, v gs = 10 v 84 a v gs = 10 v, i d = 15 a 0.059 0.059 v gs = 10 v, i d = 15 a, t j = 125 c 0.011 v gs = 10 v, i d = 15 a, t j = 175 c 0.134 drain-source on-state resistance a r ds(on) v gs = 6 v, i d = 10 a 0.064 0.062 ? forward voltage a v sd i f = 23 a, v gs = 0 v 0.89 1 v dynamic b input capacitance c iss 1290 1290 output capacitance c oss 150 160 reverse transfe r capacitance c rss v gs = 0 v, v ds = 25 v, f = 1 mhz 60 70 pf total gate charge c q g 22 22 gate-source charge c q gs 6 6 gate-drain charge c q gd v ds = 75 v, v gs = 10 v, i d = 23 a 7.5 7.5 nc turn-on delay time c t d(on) 37 10 rise time c t r 29 60 turn-off delay time c t d(off) 29 30 fall time c t f v dd = 75 v, r l = 3.26 ? i d ? 23 a, v gen = 10 v, r g = 2.5 ? 12 45 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not s ubject to production testing. c. independent of operat ing temperature.
3 v ishay siliconix spice device model SUM23N15-73 www.visha y .com document number: 72331 s-60543 ? c unless otherwise noted)
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.


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