? semiconductor components industries, llc, 2000 october, 2000 rev. 1 1 publication order number: mbr3045pt/d mbr3045pt preferred device switchmode ? power rectifier . . . using the schottky barrier principle with a platinum barrier metal. these stateoftheart devices have the following features: ? dual diode construction e terminals 1 and 3 may be connected for parallel operation at full rating ? guardring for stress protection ? low forward voltage ? 150 c operating junction temperature mechanical characteristics: ? case: epoxy, molded ? weight: 4.3 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? shipped 30 units per plastic tube ? marking: b3045 maximum ratings rating symbol max unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 45 v average rectified forward current (rated v r , t c = 105 c) per device per diode i f(av) 30 15 a peak repetitive forward current, (rated v r , square wave, 20 khz) per diode i frm 30 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 200 a peak repetitive reverse current (2.0 s, 1.0 khz) per diode see figure 6. i rrm 2.0 a storage temperature range t stg 65 to +175 c operating junction temperature t j 65 to +150 c peak surge junction temperature (forward current applied) t j(pk) 175 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s device package shipping ordering information mbr3045pt sot93 http://onsemi.com sot93 case 340d plastic 30 units/rail 2 4 1 schottky barrier rectifier 30 amperes 45 volts preferred devices are recommended choices for future use and best overall value. 1 3 2 4 3 marking diagram b3045 b3045 = device code
mbr3045pt http://onsemi.com 2 thermal characteristics per diode rating symbol max unit thermal resistance, junction to case r q jc 1.4 c/w thermal resistance, junction to ambient r q ja 40 c/w electrical characteristics per diode instantaneous forward voltage (note 1.) (i f = 20 amps, t c = 125 c) (i f = 30 amps, t c = 125 c) (i f = 30 amps, t c = 25 c) v f 0.60 0.72 0.76 volts instantaneous reverse current (note 1.) (rated dc voltage, t c = 125 c) (rated dc voltage, t c = 25 c) i r 100 1.0 ma 1. pulse test: pulse width = 300 m s, duty cycle 2.0%. 0 v f , instantaneous forward voltage (volts) 10 0.1 v r , reverse voltage (volts) 20 0 0.1 0.01 10 0.2 , instantaneous forward current (amps) i f 0.4 0.6 100 5.0 50 1.0 0.8 1.4 figure 1. typical forward voltage figure 2. typical reverse current 15 30 25 35 50 30 20 , reverse current (ma) i r 100 10 1.0 1.2 1.0 5.0 3.0 2.0 0.5 0.3 0.2 t j = 150 c 25 c 40 45 t j = 150 c 25 c 125 c 100 c 75 c
mbr3045pt http://onsemi.com 3 70 60 t c , case temperature ( c) 15 10 5.0 0 i f(av) , average forward current (amps) 20 0 20 10 5.0 0 10 80 , average forward current (amps) i f(av) 90 110 100 20 5.0 40 15 p f(av) , average forward power dissipation (watts) 120 140 130 figure 3. current derating (per leg) figure 4. forward power dissipation (per leg) 15 30 25 35 dc square wave (capacitiveload) i pk i av 20, 10, 5 0.1 0.05 v r , reverse voltage (volts) 1000 700 600 400 300 0.2 c, capacitance (pf) 0.5 2.0 1.0 3000 5.0 50 10 figure 5. capacitance 500 2000 900 800 figure 6. test circuit for repetitive reverse current 2.0 m s 1.0 khz 12 v 100 v cc 12 vdc 2n2222 current amplitude adjust 0-10 amps 100 carbon 2n6277 1.0 carbon 1n5817 d.u.t. 2.0 k w +150 v, 10 madc 4.0 m f + 20 sine wave resistive load t j = 125 c 160 150 dc square wave (capacitiveload) i pk i av 20, 10, 5 i pk i av (resistiveload)
mbr3045pt http://onsemi.com 4 package dimensions sot93 (to218) plastic case 340d02 issue b notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. a d v g k s l u b q e c j h dim min max min max inches millimeters a --- 20.35 --- 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l --- 16.20 --- 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069 123 4 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mbr3045pt/d switchmode is a trademark of semiconductor components industries, llc. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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