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8/15/02 www.irf.com 1 mosfet hexfet power mosfet switch mode power supply ( smps ) uninterruptible power supply high speed power switching
low gate charge qg results in simple drive requirement improved gate, avalanche and dynamic dv/dt ruggedness fully characterized capacitance and avalanche voltage and current effective coss specified (see an1001) v dss r ds(on) max i d 500v 0.23 ? 24a

full bridge converters power factor correction boost notes through are on page 8 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 24 i d @ t c = 100c continuous drain current, v gs @ 10v 15 a i dm pulsed drain current 96 p d @t c = 25c power dissipation 340 w linear derating factor 2.7 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 3.4 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c recommended clip force 20 n

2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 12 ??? ??? s v ds = 50v, i d = 13.8a q g total gate charge ??? ??? 115 i d = 23a q gs gate-to-source charge ??? ??? 30 nc v ds = 400v q gd gate-to-drain ("miller") charge ??? ??? 50 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 20 ??? v dd = 250v t r rise time ??? 66 ??? i d = 23a t d(off) turn-off delay time ??? 46 ??? r g = 4.3 ? t f fall time ??? 44 ??? r d = 10.6 ? ,see fig. 10 c iss input capacitance ??? 3400 ??? v gs = 0v c oss output capacitance ??? 500 ??? v ds = 25v c rss reverse transfer capacitance ??? 17 ??? pf ? = 1.0mhz, see fig. 5 c oss output capacitance ??? 4900 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 130 ??? v gs = 0v, v ds = 400v, ? = 1.0mhz c oss eff. effective output capacitance ??? 150 ??? v gs = 0v, v ds = 0v to 400v parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 500 ??? ??? v v gs = 0v, i d = 250a r ds(on) static drain-to-source on-resistance ??? ??? 0.23 ? v gs = 10v, i d = 13.8a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a ??? ??? 25 a v ds = 500v, v gs = 0v ??? ??? 250 v ds = 400v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 1200 mj i ar avalanche current ??? 24 a e ar repetitive avalanche energy ??? 34 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.5 v t j = 25c, i s = 23a, v gs = 0v t rr reverse recovery time ??? 500 750 ns t j = 25c, i f = 23a q rr reverse recovery charge ??? 6.4 9.6 c di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 23 92 parameter typ. max. units r jc junction-to-case ??? 0.37 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 58 thermal resistance
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 23a
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 1000 2000 3000 4000 5000 6000 7000 1 10 100 1000 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 20 40 60 80 100 120 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 23a v = 100v ds v = 250v ds v = 400v ds 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 10 100 1000 10000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 5 10 15 20 25 t , case temperature ( c) i , drain current (a) c d
6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -
fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 12d. typical drain-to-source voltage vs. avalanche current 590 600 610 620 630 640 0 4 8 12162024 a dsav av i , avalanche current (a) v , avalanche voltage (v) 25 50 75 100 125 150 0 500 1000 1500 2000 2500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 10.7a 15a 24a
www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet
power mosfet
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8 www.irf.com repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd 23a, di/dt 123a/s, v dd v (br)dss , t j 150c starting t j = 25c, l = 3.4mh r g = 25 ? , i as = 24a. (see figure 12) pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 8/02

not recommended for surface mount application
2x a 123 3x 0.25 [.010] b a b 4x 4 0.2 5 [ 3.00 [.118] 2.50 [.099] 14.50 [.570] 13.00 [.512] 4.00 [.157] 3.50 [.138] 1.30 [.051] 0.90 [.036] 2.55 [.100] 1.00 [.039] 0.70 [.028] 5.00 [.196] 4.00 [.158] 11.00 [.433] 10.00 [.394] 1.50 [.059] 0.50 [.020] 15.00 [.590] 14.00 [.552] 9.00 [. 8.00 [. 13.50 [. 12.50 [.

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