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| inchange semiconductor isc product specification isc silicon npn power transistors 2SC3590 description collector-emitter breakdown voltage- : v (br)ceo = 150v(min) fast switching speed low saturation voltage applications designed for high definition crt display horizontal deflection output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 330 v v ceo collector-emitter voltage 150 v v ebo emitter-base voltage 6 v i c collector current-continuous 7 a i cm collector current-peak 12 a i b b base current-continuous 4 a p t total power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors 2SC3590 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 330 v v (br)ceo collector-emitter breakdown voltage i c = 1ma; r be = 150 v v (br)ebo emitter-base breakdown voltage i e = 1m a; i c = 0 6 v v ce( sat ) collector-emitter saturation voltage i c = 5a; i b = 0.5a b 0.8 v v be( sat ) base-emitter saturation voltage i c = 5a; i b = 0.5a b 1.5 v i cbo collector cutoff current v cb = 180v; i e = 0 100 a i ebo emitter cutoff current v eb = 5v; i c = 0 100 a h fe-1 dc current gain i c = 1a; v ce = 1v 15 h fe-2 dc current gain i c = 5a; v ce = 1v 10 50 f t current-gain?bandwidth product i c = 0.5a; v ce = 10v 40 mhz t f fall time i c = 5a, i b1 = -i b2 = 0.5a 0.3 s isc website www.iscsemi.cn 2 |
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