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december 2007 rev 1 1/30 30 ts2012 filter-free stereo 2x2.8w class d audio power amplifer features operating range from v cc =2.5v to 5.5v standby mode active low output power per channel : 1.35w @5v or 0.68w @ 3.6v into 8 with 1% thd+n max. output power per channel : 2.2w @5v into 4 with 1% thd+n max. four gains select : 6, 12, 18, 24 db low current consumption psrr: 70db typ @ 217hz with 6db gain. fast start-up phase: 1ms thermal shutdown protection qfn20 4x4mm lead-free package applications cellular phone pda flat panel tv description the ts2012 is a stereo fully differential class d power amplifier. able to drive up to 1.35w into an 8 load at 5v per channel. it achieves outstanding efficiency compared to typical class ab audio amps. the device has four differ ent gain settings utilizing two discrete pins: g0 and g1. pop & click reduction circuitry provides low on/off switch noise while allowin g the device to start within 1ms. two standby pins (active low) allow each channel to be switched off independently. the ts2012 is available in a qfn20 package in 4x4 mm dimension. gain select pwm h bridge lin + lin - g0 g1 av lout+ lout- cc pv cc pv cc stby l stby r gain select pwm h bridge rin - rin + rout+ rout- oscillator standby control 300k 300k 300k 300k agnd pgnd pgnd 1 2 3 4 5 7 8 9 11 12 13 14 15 16 17 18 19 20 TS2012IQT - qfn20 (4x4) g1 g0 lout+ pvcc pgnd pvcc rout+ pgnd nc stbyl stbyr avcc lin+ lin- agnd rin- lout- nc rout- rin+ 1 2 4 3 5 67 8 910 11 12 13 14 15 16 17 18 19 20 g1 g0 lout+ pvcc pgnd pvcc rout+ pgnd nc stbyl stbyr avcc lin+ lin- agnd rin- lout- nc rout- rin+ 1 2 4 3 5 67 8 910 11 12 13 14 15 16 17 18 19 20 pin connections (top view) block diagram www.st.com
contents ts2012 2/30 contents 1 absolute maximum ratings and operating conditions . . . . . . . . . . . . . 3 2 typical application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.1 electrical characteristic tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.2 electrical characteristic curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4 application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.1 differential configuration principle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.2 gain settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.3 common mode feedback loop limitations . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.4 low frequency response . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4.5 decoupling of the circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4.6 wake-up time (t wu ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.7 shutdown time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.8 consumption in shutdown mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.9 single-ended input configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.10 output filter considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 5 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 6 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
ts2012 absolute maximum rati ngs and operating conditions 3/30 1 absolute maximum ratings and operating conditions table 1. absolute maximum ratings symbol parameter value unit v cc supply voltage (1) 1. all voltage values are measur ed with respect to the ground pin. 6v v i input voltage (2) 2. the magnitude of the input signal must never exceed v cc + 0.3v / gnd - 0.3v. gnd to v cc v t oper operating free air temperature range -40 to + 85 c t stg storage temperature -65 to +150 c t j maximum junction temperature 150 c r thja thermal resistance junction to ambient (3) 3. the device is protected in case of over te mperature by a thermal shutdown active @ 150c. 100 c/w p d power dissipation internally limited (4) 4. exceeding the power derating curves during a long period will caus e abnormal operation. esd hbm: human body model (5) 5. human body model: 100 pf discharged through a 1.5 k resistor between two pins of the device, done for all couples of pin combinati ons with other pins floating. 2kv mm: machine model (6) 6. machine model: a 200 pf cap is charged to the spec ified voltage, then discharged directly between two pins of the device with no external se ries resistor (internal resistor < 5 ), done for all couples of pin combinations with other pins floating. 200 v latch-up latch-up immunity 200 ma v stby standby pin voltage maximum voltage gnd to v cc v lead temperature (soldering, 10sec) 260 c
absolute maximum ratings and operating conditions ts2012 4/30 table 2. operating conditions symbol parameter value unit v cc supply voltage 2.5 to 5.5 v v i input voltage range gnd to v cc v v ic input common mode voltage (1) 1. i v oo i 40mv max with all differential gains except 24db. for 24db gain, input decoupling caps are mandatory. gnd+0.5v to v cc -0.9v v v stby standby voltage input (2) device on device in standby (3) 2. without any signal on v stby , the device is in standby (internal 300k +/-20% pull-down resistor). 3. minimum current consumption is obtained when v stby = gnd. 1.4 v stby v cc gnd v stby 0.4 v r l load resistor 4 v ih go, g1 - high level input voltage (4) 4. between g0, g1pins and gnd, there is an internal 300k (+/-20%) pull-down resi stor. when pins are floating, the gain is 6 db. in full standby (left and right channels off), these resistors are disconnected (hiz input). 1.4 v ih v cc v v il go, g1 - low level input voltage gnd v il 0.4 v r thja thermal resistance junction to ambient (5) 5. with 4-layer pcb. 40 c/w
ts2012 typical application 5/30 2 typical application figure 1. typical application schematics vcc csl ts2012 15 h 2 f 2 f 15 h 30 h 1 f 1 f 30 h load 4 lc output filter 8 lc output filter gain select gain select standby control pwm h bridge pwm h bridge oscillator lin + lin - rin - rin + g0 g1 stby l stby r av agnd pgnd pgnd lout+ lout- cc pv cc pv cc rout+ rout- left speaker right speaker cin cin left in+ input capacitors are optional left in- differential left input cin cin right in+ right in- differential right input standby control vcc csr vcc cs 100nf vcc csl ts2012 gain select gain select standby control pwm h bridge pwm h bridge oscillator lin + lin - rin - rin + g0 g1 stby l stby r av agnd pgnd pgnd lout+ lout- cc pv cc pv cc rout+ rout- cin cin left in+ input capacitors are optional left in- differential left input cin cin right in+ right in- differential right input gain select standby control vcc csr 1 f vcc cs 100nf lc output filter lc output filter load control gain select control 1 f 1 f 1 f
typical application ts2012 6/30 table 3. external component descriptions components function al description c s , c sl , c sr supply capacitor that provides power supply filtering. c in input coupling capacitors (optional) that bl ock the dc voltage at the amplifier input terminal. the capacitors also form a high pass filter with z in (f cl = 1 / (2 x x z in x c in )). table 4. pin descriptions pin number pin name pin description 1 g1 gain select pin (msb) 2 lout+ left channel positive output 3 pvcc power supply 4 pgnd power ground 5 lout- left channel negative output 6 nc no internal connection 7 stbyl standby pin (active low) for left channel output 8 stbyr standby pin (active low) for right channel output 9 avcc analog supply 10 nc no internal connection 11 rout- right channel negative output 12 pgnd power ground 13 pvcc power supply 14 rout+ right channel positive output 15 g0 gain select pin (lsb) 16 rin+ right channel positive differential input 17 rin- right channel negative differential input 18 agnd analog ground 19 lin- left channel negative differential input 20 lin+ left channel positive differential input thermal pad connect the thermal pad of the qfn package to pcb ground
ts2012 electrical characteristics 7/30 3 electrical characteristics 3.1 electrical characteristic tables table 5. v cc = +5v, gnd = 0v, v ic =2.5v, t amb = 25c (unless otherwise specified) symbol parameters and test conditions min. typ. max. unit i cc supply current no input signal, no load, both channels 58ma i stby standby current no input signal, v stby = gnd 0.2 2 a v oo output offset voltage floating inputs, g = 6db, r l = 8 25 mv p o output power thd + n = 1% max, f = 1khz, r l = 4 thd + n = 1% max, f = 1khz, r l = 8 thd + n = 10% max, f = 1khz, r l = 4 thd + n = 10% max, f = 1khz, r l = 8 2.2 1.35 2.8 1.65 w thd + n total harmonic distortion + noise p o = 0.8w, g = 6db, f =1khz, r l = 8 0.07 % efficiency efficiency per channel p o = 2.2w, r l = 4 +15h p o = 1.25 w, r l = 8 +15h 81 89 % psrr power supply rejection ratio with inputs grounded c in =1f (1) ,f = 217hz, r l = 8 , gain=6db , v ripple = 200mv pp 70 db crosstalk channel separation p o = 0.9w, g = 6db, f =1khz, r l = 8 90 db cmrr common mode rejection ratio c in =1f, f = 217hz, r l = 8 , gain=6db , vicm = 200mv pp 70 db gain gain value g1 = g0 = v il g1 = v il & g0 = v ih g1 = v ih & g0 = v il g1 = g0 = v ih 5.5 11.5 17.5 23.5 6 12 18 24 6.5 12.5 18.5 24.5 db z in single ended input impedance all gains, refered to ground 24 30 36 k f pwm pulse width modulator base frequency 190 280 370 khz snr signal to noise ratio (a-weighting) p o = 1.3w, g = 6db, r l = 8 99 db t wu wake-up time 1 3 ms t stby standby time 1 ms
electrical characteristics ts2012 8/30 v n output voltage noise f = 20hz to 20khz, r l =8 unweighted (filterless, g=6db) a-weighted (filterless, g=6db) unweighted (with lc output filter, g=6db) a-weighted (with lc output filter, g=6db) unweighted (filterless, g=24db) a-weighted (filterless, g=24db) unweighted (with lc output filter, g=24db) a-weighted (with lc output filter, g=24db) 63 35 60 35 115 72 109 71 v rms 1. dynamic measurements - 20*log(rms(v out )/rms(v ripple )). v ripple is the superimposed sinus signal to v cc @ f = 217hz. table 5. v cc = +5v, gnd = 0v, v ic =2.5v, t amb = 25c (unless otherwise specified) (continued) symbol parameters and test conditions min. typ. max. unit
ts2012 electrical characteristics 9/30 table 6. v cc = +3.6v, gnd = 0v, v ic =1.8v, t amb = 25c (unless otherwise specified) symbol parameter min. typ. max. unit i cc supply current no input signal, no load, both channels 3.3 6.5 ma i stby standby current no input signal, v stby = gnd 0.2 2 a v oo output offset voltage floating inputs, g = 6db, r l = 8 25 mv p o output power thd + n = 1% max, f = 1khz, r l = 4 thd + n = 1% max, f = 1khz, r l = 8 thd + n = 10% max, f = 1khz, r l = 4 thd + n = 10% max, f = 1khz, r l = 8 1.15 0.68 1.3 0.9 w thd + n total harmonic distortion + noise p o = 0.4w, g = 6db, f =1khz, r l = 8 0.05 % efficiency efficiency per channel p o = 1.15w, r l = 4 +15h p o = 0.68w, r l = 8 +15h 80 88 % psrr power supply rejection ratio with inputs grounded c in =1f (1) ,f = 217hz, r l = 8 , gain=6db , v ripple = 200mv pp 70 db crosstalk channel separation p o = 0.5w, g = 6db, f =1khz, r l = 8 90 cmrr common mode rejection ratio c in =1f, f = 217hz, r l = 8 , gain=6db , vicm = 200mv pp 70 db gain gain value g1 = g0 = v il g1 = v il & g0 = v ih g1 = v ih & g0 = v il g1 = g0 = v ih 5.5 11.5 17.5 23.5 6 12 18 24 6.5 12.5 18.5 24.5 db z in single ended input impedance all gains, referred to ground 24 30 36 k f pwm pulse width modulator base frequency 190 280 370 khz snr signal to noise ratio (a-weighting) p o = 0.65w, g = 6db, r l = 8 96 db t wu wake-up time 1 3 ms t stby standby time 1 ms
electrical characteristics ts2012 10/30 v n output voltage noise f = 20hz to 20khz, r l =4 unweighted (filterless, g=6db) a-weighted (filterless, g=6db) unweighted (with lc output filter, g=6db) a-weighted (with lc output filter, g=6db) unweighted (filterless, g=24db) a-weighted (filterless, g=24db) unweighted (with lc output filter, g=24db) a-weighted (with lc output filter, g=24db) 58 34 55 34 111 70 105 69 v rms 1. dynamic measurements - 20*log(rms(v out )/rms(v ripple )). v ripple is the superimposed sinus signal to v cc @ f = 217hz. table 6. v cc = +3.6v, gnd = 0v, v ic =1.8v, t amb = 25c (unless otherwise specified) (continued) symbol parameter min. typ. max. unit
ts2012 electrical characteristics 11/30 table 7. v cc = +2.5v, gnd = 0v, v ic =1.25v, t amb = 25c (unless otherwise specified) symbol parameter min. typ. max. unit i cc supply current no input signal, no load, both channels 2.8 4 ma i stby standby current no input signal, v stby = gnd 0.2 2 a v oo output offset voltage floating inputs, g = 6db, r l = 8 25 mv p o output power thd + n = 1% max, f = 1khz, r l = 4 thd + n = 1% max, f = 1khz, r l = 8 thd + n = 10% max, f = 1khz, r l = 4 thd + n = 10% max, f = 1khz, r l = 8 0.53 0.32 0.75 0.45 w thd + n total harmonic distortion + noise p o = 0.2w, g = 6db, f =1khz, r l = 8 0.04 % efficiency efficiency per channel p o = 0.53w, r l = 4 +15h p o = 0.32w, r l = 8 +15h 80 88 % psrr power supply rejection ratio with inputs grounded c in =1f (1) ,f = 217hz, r l = 8 , gain=6db , v ripple = 200mv pp 70 db crosstalk channel separation p o = 0.2w, g = 6db, f =1khz, r l = 8 90 cmrr common mode rejection ratio c in =1f, f = 217hz, r l = 8 , gain=6db , vicm = 200mv pp 70 db gain gain value g1 = g0 = v il g1 = v il & g0 = v ih g1 = v ih & g0 = v il g1 = g0 = v ih 5.5 11.5 17.5 23.5 6 12 18 24 6.5 12.5 18.5 24.5 db z in single ended input impedance all gains, refered to ground 24 30 36 k f pwm pulse width modulator base frequency 190 280 370 khz snr signal to noise ratio (a-weighting) p o = 0.3w, g = 6db, r l = 8 93 db t wu wake-up time 1 3 ms t stby standby time 1 ms
electrical characteristics ts2012 12/30 3.2 electrical characteristic curves the graphs shown in this section use the following abbreviations: r l + 15h or 30h = pure resistor + very low series resistance inductor filter = lc output filter (1f+30h for 4 and 0.5f+60h for 8 ) all measurements are done with c sl =c sr =1f and c s =100nf (see figure 2 ), except for the psrr where c sl,r is removed (see figure 3 ). figure 2. test diagram for measurements v n output voltage noise f = 20hz to 20khz, r l =8 unweighted (filterless, g=6db) a-weighted (filterless, g=6db) unweighted (with lc output filter, g=6db) a-weighted (with lc output filter, g=6db) unweighted (filterless, g=24db) a-weighted (filterless, g=24db) unweighted (with lc output filter, g=24db) a-weighted (with lc output filter, g=24db) 57 34 54 33 110 71 104 69 v rms 1. dynamic measurements - 20*log(rms(v out )/rms(v ripple )). v ripple is the superimposed sinus signal to v cc @ f = 217hz. table 7. v cc = +2.5v, gnd = 0v, v ic =1.25v, t amb = 25c (unless otherwise specified) symbol parameter min. typ. max. unit vcc cin cin (csr) 1/2 ts2012 c 100nf in+ in- 15 h or 30 h ? or lc filter out+ out- 1 f 4 or 8 rl 5th order 50khz low-pass filter audio measurement bandwith < 30khz gnd gnd gnd s csl
ts2012 electrical characteristics 13/30 figure 3. test diagram for psrr measurements vcc cin cin 1/2 ts2012 cs 100nf in+ in- 15 h or 30 h ? or lc filter out+ out- 4 or 8 rl 5th order 50khz low-pass filter rms selective measurement bandwith =1% of fmeas gnd gnd gnd 1 f 1 f gnd 5th order 50khz low-pass filter reference 20hz to 20khz vripple vcc
electrical characteristics ts2012 14/30 table 8. index of graphics description figure current consumption vs. power supply voltage figure 4 current consumption vs. standby voltage figure 5 efficiency vs. output power figure 6 - figure 9 output power vs. power supply voltage figure 10 , figure 11 psrr vs. common mode input voltage figure 12 psrr vs. frequency figure 13 cmrr vs. common mode input voltage figure 14 cmrr vs. frequency figure 15 gain vs. frequency figure 16 , figure 17 thd+n vs. output power figure 18 - figure 25 thd+n vs. frequency figure 26 - figure 37 crosstalk vs. frequency figure 38 - figure 41 power derating curves figure 42 startup and shutdown time figure 43 , figure 44
ts2012 electrical characteristics 15/30 figure 4. current consumption vs. power supply voltage figure 5. current consumption vs. standby voltage (one channel) 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 1 2 3 4 5 6 one channel on both channels on t amb =25c no loads current consumption (ma) power supply voltage (v) 012345 0.0 0.5 1.0 1.5 2.0 2.5 v cc =3.6v v cc =5v no load t amb =25c v cc =2.5v current consumption (ma) standby voltage (v) figure 6. efficiency vs. output power f igure 7. efficiency vs. output power 0.0 0.1 0.2 0.3 0.4 0.5 0 20 40 60 80 100 0 25 50 75 100 125 vcc=2.5v rl=4 + 15 h f=1khz thd+n 1% power dissipation efficiency efficiency (%) output power (w) power dissipation (mw) 0.0 0.5 1.0 1.5 2.0 0 20 40 60 80 100 0 100 200 300 400 500 vcc=5v rl=4 + 15 h f=1khz thd+n 1% power dissipation efficiency efficiency (%) output power (w) power dissipation (mw) figure 8. efficiency vs. output power f igure 9. efficiency vs. output power 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 20 40 60 80 100 0 10 20 30 40 50 vcc=2.5v rl=8 + 15 h f=1khz thd+n 1% power dissipation efficiency efficiency (%) output power (w) power dissipation (mw) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20 40 60 80 100 0 40 80 120 160 200 vcc=5v rl=8 + 15 h f=1khz thd+n 1% power dissipation efficiency efficiency (%) output power (w) power dissipation (mw)
electrical characteristics ts2012 16/30 figure 10. output power vs. power supply voltage figure 11. output power vs. power supply voltage 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 thd+n=10% rl = 4 + 15 h f = 1khz bw < 30khz tamb = 25 c thd+n=1% output power (w) power supply voltage (v) 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.0 0.4 0.8 1.2 1.6 2.0 thd+n=10% rl = 8 + 15 h f = 1khz bw < 30khz tamb = 25 c thd+n=1% output power (w) power supply voltage (v) figure 12. psrr vs. common mode input voltage figure 13. psrr vs. frequency 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -80 -70 -60 -50 -40 -30 -20 -10 0 gain=6db gain=24db vcc=3v vcc=2.5v vcc=5v vripple = 200mvpp, f = 217hz rl 4 + 15 h, tamb = 25 c psrr(db) common mode input voltage (v) 100 1k 10k -80 -70 -60 -50 -40 -30 -20 -10 0 gain=24db inputs grounded, vripple = 200mvpp rl 4 + 15 h, cin=1 f, tamb=25 c vcc = 2.5, 3.6, 5v 20k 20 gain=6db psrr (db) frequency (hz) figure 14. cmrr vs. common mode input voltage figure 15. cmrr vs. frequency 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -80 -70 -60 -50 -40 -30 -20 -10 0 gain=6db gain=24db vcc=3v vcc=2.5v vcc=5v vicm=200mvpp, f = 217hz rl 4 + 15 h, tamb = 25 c cmrr(db) common mode input voltage (v) 100 1k 10k -80 -70 -60 -50 -40 -30 -20 -10 0 gain=24db vicm=200mvpp, vcc = 2.5, 3.6, 5v rl 4 + 15 h, cin=1 f, tamb=25 c 20k 20 gain=6db cmrr (db) frequency (hz)
ts2012 electrical characteristics 17/30 figure 16. gain vs. frequency figure 17. gain vs. frequency 100 1k 10k 0 2 4 6 8 rl=4 +30 h rl=4 +15 h rl=8 +30 h rl=8 +15 h no load gain = 6db vin = 500mv cin = 4.7 f t amb = 25 c gain (db) frequency (hz) 20 20k 100 1k 10k 18 20 22 24 26 rl=4 +30 h rl=4 +15 h rl=8 +30 h rl=8 +15 h no load gain = 24db vin = 5mv cin = 4.7 f t amb = 25 c gain (db) frequency (hz) 20 20k figure 18. thd+n vs. output power figure 19. thd+n vs. output power 1e-3 0.01 0.1 1 0.1 1 10 3 vcc=3.6v vcc=5v vcc=2.5v rl = 4 + 15 h f = 1khz g = 6db bw < 30khz tamb = 25 c thd + n (%) output power (w) 1e-3 0.01 0.1 1 0.1 1 10 3 vcc=3.6v vcc=5v vcc=2.5v rl = 4 + 30 h f = 1khz g = 6db bw < 30khz tamb = 25 c thd + n (%) output power (w) figure 20. thd+n vs. output power figure 21. thd+n vs. output power 1e-3 0.01 0.1 1 0.1 1 10 2 vcc=5v vcc=2.5v vcc=3.6v rl = 8 + 15 h f = 1khz g = 6db bw < 30khz tamb = 25 c thd + n (%) output power (w) 1e-3 0.01 0.1 1 0.1 1 10 2 vcc=5v vcc=2.5v vcc=3.6v rl = 8 + 30 h f = 1khz g = 6db bw < 30khz tamb = 25 c thd + n (%) output power (w)
electrical characteristics ts2012 18/30 figure 22. thd+n vs. output power figure 23. thd+n vs. output power 1e-3 0.01 0.1 1 0.01 0.1 1 10 3 vcc=3.6v vcc=5v vcc=2.5v rl = 4 + 15 h f = 100hz g = 6db bw < 30khz tamb = 25 c thd + n (%) output power (w) 1e-3 0.01 0.1 1 0.01 0.1 1 10 3 vcc=3.6v vcc=5v vcc=2.5v rl = 4 + 30 h f = 100hz g = 6db bw < 30khz tamb = 25 c thd + n (%) output power (w) figure 24. thd+n vs. output power figure 25. thd+n vs. output power 1e-3 0.01 0.1 1 0.01 0.1 1 10 2 vcc=5v vcc=2.5v vcc=3.6v rl = 8 + 15 h f = 100hz g = 6db bw < 30khz tamb = 25 c thd + n (%) output power (w) 1e-3 0.01 0.1 1 0.01 0.1 1 10 2 vcc=5v vcc=2.5v vcc=3.6v rl = 8 + 30 h f = 100hz g = 6db bw < 30khz tamb = 25 c thd + n (%) output power (w) figure 26. thd+n vs. frequency figure 27. thd+n vs. frequency 100 1000 10000 0.01 0.1 1 10 po=0.2w po=0.4w rl=4 + 15 h g=6db bw < 30khz vcc=2.5v tamb = 25 c 20k 20 thd + n (%) frequency (hz) 100 1000 10000 0.01 0.1 1 10 po=0.2w po=0.4w rl=4 + 30 h g=6db bw < 30khz vcc=2.5v tamb = 25 c 20k 20 thd + n (%) frequency (hz)
ts2012 electrical characteristics 19/30 figure 28. thd+n vs. frequency figure 29. thd+n vs. frequency 100 1000 10000 0.01 0.1 1 10 po=0.1w po=0.2w rl=8 + 15 h g=6db bw < 30khz vcc=2.5v tamb = 25 c 20k 20 thd + n (%) frequency (hz) 100 1000 10000 0.01 0.1 1 10 po=0.1w po=0.2w rl=8 + 30 h g=6db bw < 30khz vcc=2.5v tamb = 25 c 20k 20 thd + n (%) frequency (hz) figure 30. thd+n vs. frequency figure 31. thd+n vs. frequency 100 1000 10000 0.01 0.1 1 10 po=0.45w po=0.9w rl=4 + 15 h g=6db bw < 30khz vcc=3.6v tamb = 25 c 20k 20 thd + n (%) frequency (hz) 100 1000 10000 0.01 0.1 1 10 po=0.45w po=0.9w rl=4 + 30 h g=6db bw < 30khz vcc=3.6v tamb = 25 c 20k 20 thd + n (%) frequency (hz) figure 32. thd+n vs. frequency figure 33. thd+n vs. frequency 100 1000 10000 0.01 0.1 1 10 po=0.25w po=0.5w rl=8 + 15 h g=6db bw < 30khz vcc=3.6v tamb = 25 c 20k 20 thd + n (%) frequency (hz) 100 1000 10000 0.01 0.1 1 10 po=0.25w po=0.5w rl=8 + 30 h g=6db bw < 30khz vcc=3.6v tamb = 25 c 20k 20 thd + n (%) frequency (hz)
electrical characteristics ts2012 20/30 figure 34. thd+n vs. frequency figure 35. thd+n vs. frequency 100 1000 10000 0.01 0.1 1 10 po=0.75w po=1.5w rl=4 + 15 h g=6db bw < 30khz vcc=5v tamb = 25 c 20k 20 thd + n (%) frequency (hz) 100 1000 10000 0.01 0.1 1 10 po=0.75w po=1.5w rl=4 + 30 h g=6db bw < 30khz vcc=5v tamb = 25 c 20k 20 thd + n (%) frequency (hz) figure 36. thd+n vs. frequency figure 37. thd+n vs. frequency 100 1000 10000 0.01 0.1 1 10 po=0.45w po=0.9w rl=8 + 15 h g=6db bw < 30khz vcc=5v tamb = 25 c 20k 20 thd + n (%) frequency (hz) 100 1000 10000 0.01 0.1 1 10 po=0.45w po=0.9w rl=8 + 30 h g=6db bw < 30khz vcc=5v tamb = 25 c 20k 20 thd + n (%) frequency (hz) figure 38. crosstalk vs. frequency figure 39. crosstalk vs. frequency 100 1k 10k -120 -100 -80 -60 -40 -20 0 r -> l l -> r vcc=2.5, 3.6, 5v rl=4 +30 h gain = 6db t amb = 25 c crosstalk (db) frequency (hz) 20 20k 100 1k 10k -120 -100 -80 -60 -40 -20 0 r -> l l -> r vcc=2.5, 3.6, 5v rl=8 +30 h gain = 6db t amb = 25 c crosstalk (db) frequency (hz) 20 20k
ts2012 electrical characteristics 21/30 figure 40. crosstalk vs. frequency figure 41. crosstalk vs. frequency 100 1k 10k -120 -100 -80 -60 -40 -20 0 r -> l l -> r vcc = 2.5, 3.6, 5v rl = 4 +30 h gain = 24db t amb = 25 c crosstalk (db) frequency (hz) 20 20k 100 1k 10k -120 -100 -80 -60 -40 -20 0 r -> l l -> r vcc=2.5, 3.6, 5v rl=8 +30 h gain = 24db t amb = 25 c crosstalk (db) frequency (hz) 20 20k figure 42. power derating curves figure 43. startup and shutdown phase v cc =5v, g=6db, c in =1f, inputs grounded figure 44. startup and shutdown phase v cc =5v, g=6db, c in =1f, v in =2v pp , f=10khz 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 no heat sink with 4-layer pcb qfn20 package power dissipation (w) ambient temperature ( c)
application information ts2012 22/30 4 application information 4.1 differential configuration principle the ts2012 is a monolithic fully-differentia l input/output class d power amplifier. the ts2012 also includes a common-mode feedback loop that controls the output bias value to average it at v cc /2 for any dc common mode input voltage. this allows the device to always have a maximum output voltage swing, and by consequence, maximize the output power. moreover, as the load is connected differentially compared with a single-ended topology, the output is four times higher for the same power supply voltage. the advantages of a full-differential amplifier are: high psrr (power supply rejection ratio) high common mode noise rejection virtually zero pop without additional circuitry, giving a faster start-up time compared with conventional single-e nded input amplifiers easier interfacing with differential output audio dac no input coupling capacitors required thanks to common mode feedback loop 4.2 gain settings in the flat region of the frequency-response curve (no input coupling capacitor or internal feedback loop + load effect), the differential gain can be set to 6, 12 18, 24 db depending on the logic level of the g0 and g1 pins, as shown in ta bl e 9 . note: between pins g0, g1 and gnd there is an internal 300k (+/-20%) resistor. when the pins are floating, the gain is 6 db. in full standby (left and right channels off), these resistors are disconnected (hiz input). 4.3 common mode feedback loop limitations as explained previously, the common mode feedback loop allows the output dc bias voltage to be averaged at v cc /2 for any dc common mode bias input voltage. due to the v ic limitation of the input stage (see table 2: operating conditions on page 4 ), the common mode feedback loop can fulfil its role only within the defined range. table 9. gain settings with g0 and g1 pins g1 g0 gain (db) gain (v/v) 0062 01124 10188 1 1 24 16
ts2012 application information 23/30 4.4 low frequency response if a low frequency bandwidth lim itation is required , it is possible to use input coupling capacitors. in the low frequency region, the input coupling capacitor c in starts to have an effect. c in forms, with the input impedance z in , a first order high-pass filter with a -3db cut- off frequency (see ta bl e 5 to ta bl e 7 ): so, for a desired cut-off frequency f cl c in is calculated as follows: with f cl in hz, z in in and c in in f. the input impedance z in is for the whole power supply voltage range, typically 30k . there is also a tolerance around the typical value (see ta b l e 5 to ta bl e 7 ). you can also calculate the tolerance of the f cl : 4.5 decoupling of the circuit power supply capacitors, referred to as c s ,c sl ,c sr are needed to correctly bypass the ts2012. the ts2012 has a typical switching frequency of 280khz and output fall and rise time about 5ns. due to these very fast transients, careful decoupling is mandatory. a 1f ceramic capacitor between each pvcc and pgnd and also between avcc and agnd is enough, but they must be located very close to the ts2012 in order to avoid any extra parasitic inductance created by a long track wire. parasitic loop inductance, in relation with di/dt, introduces overvoltage that decreases the global efficiency of the device and may cause, if this parasitic inductance is too high, a ts2012 breakdown. in addition, even if a ceramic capacitor has an adequate high frequency esr value, its current capability is also important. a 0603 si ze is a good compromise, particularly when a 4 load is used. another important parameter is the rated voltage of the capacitor. a 1f/6.3v capacitor used at 5v, loses about 50% of its value. with a power supply voltage of 5v, the decoupling value, instead of 1f, could be reduced to 0.5f. as c s has particular influence on the thd+n in the medium to high frequency region, this capacitor variation becomes decisive. in addition, less decoupling means higher overshoots which can be problematic if they reach the power supply amr value (6v). f cl 1 2 z in c in ?? ? -------------------------------------------- = c in 1 2 z in f cl ?? ? --------------------------------------------- - = f clmax 1.103 f cl ? = f clmin 0.915 f cl ? =
application information ts2012 24/30 4.6 wake-up time (t wu ) when the standby is released to set the device on, there is a delay of 1ms typically. the ts2012 has an internal digital delay that mutes the outputs and releases them after this time in order to avoid any pop noise. note: the gain increases smoothly (see figure 44 ) from the mute to the gain selected by the g1 and g0 pin ( section 4.2 ). 4.7 shutdown time when the standby command is set, the time required to set the output stage considered into high impedance and to put the internal circuitry in shutdown mode, is typically 1ms. this time is used to decrease the gain and avoid any pop noise during shutdown. note: the gain decreases smoothly until the outputs are muted (see figure 44 ). 4.8 consumption in shutdown mode between the shutdown pin and gnd there is an internal 300k (+-/20%) resistor. this resistor forces the ts2012 to be in shutdown when the shutdown input is left floating. however, this resistor also introduces add itional shutdown power consumption if the shutdown pin voltage is not 0v. with a 0.4v shutdown voltage pin for example, you must add 0.4v/300k =1.3a in typical (0.4v/240k =1.66a in maximum for each shutdown pin) to the standby current specified in ta bl e 5 to ta b l e 7 . of course, this current will be provided by the external control device for standby pins. 4.9 single-ended input configuration it is possible to use the ts2012 in a single-ended input configuration. however, input coupling capacitors are mandatory in this configuration. the schematic diagram in figure 45 shows a typical single-ended input application.
ts2012 application information 25/30 figure 45. typical application for single-ended input configuration 4.10 output filter considerations the ts2012 is designed to operate without an output filter. however, due to very sharp transients on the ts2012 output, emi radi ated emissions may cause some standard compliance issues. these emi standard compliance issues can appear if the distance between the ts2012 outputs and loudspeaker terminal are long (typically more than 50mm, or 100mm in both directions, to the speaker terminals). as the pcb layout and internal equipment device are different for each configuration, it is difficult to provide a one-size-fits-all solution. however, to decrease the prob ability of emi issues, there are several simple rules to follow: reduce, as much as possible, the distance between the ts2012 output pins and the speaker terminals. use a ground plane for ?shielding? sensitive wires. place, as close as possible to the ts2012 and in series with each output, a ferrite bead with a rated current of minimum 2.5a and impedance greater than 50 at frequencies above 30mhz. if, after testing, these ferrite beads are not necessary, replace them by a short-circuit. allow extra footprint to place, if necessary, a capacitor to short perturbations to ground (see figure 46 ). vcc csl ts2012 gain select gain select standby control pwm h bridge pwm h bridge oscillator lin + lin - rin - rin + g0 g1 stby l stby r av agnd pgnd pgnd lout+ lout- cc pv cc pv cc rout+ rout- left speaker right speaker cin cin left input cin cin right input standby control vcc csr vcc cs 100nf gain select control 1 f 1 f
application information ts2012 26/30 figure 46. ferrite chip bead placement in the case where the distance between the ts2012 output and the speaker terminals is too long, it is possible to have low frequency emi issues due to the fact that the typical operating frequency is 280khz. in this configuration, it is necessary to use the output filter represented in figure 1 on page 5 as close as possible to the ts2012. to speaker about 100pf gnd ferrite chip bead from output
ts2012 package information 27/30 5 package information in order to meet environmental requirements, stmicroelectronics offers these devices in ecopack ? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an stmicroelectronics trademark. ecopack specifications are available at: www.st.com . figure 47. qfn20 package mechanical drawing
package information ts2012 28/30 figure 48. qfn20 package footprint note: the qfn20 package has an exposed pad e2 x d2. for enhanced thermal performance, the exposed pad must be soldered to a copper area on the pcb, acting as a heatsink. this copper area can be electrically connected to pin 4, 12, 18 (pgnd, agnd) or left floating. table 10. qfn20 package mechanical data ref dimensions in mm min typ max a0.80.91 a1 0.02 0.05 a2 0.65 1 a3 0.25 b 0.18 0.23 0.3 d 3.85 4 4.15 d2 2.6 e 3.85 4 4.15 e2 2.6 e 0.45 0.5 0.55 l0.30.40.5 ddd 0.08 a4.55 b4.55 c0.50 d0.35 e0.65 f2.45 g0.40 footprint da ta (mm)
ts2012 ordering information 29/30 6 ordering information 7 revision history table 11. order code part number temperature range package packaging marking TS2012IQT -40c to +85c qfn20 tape & reel k12 table 12. document revision history date revision changes 17-dec-2007 1 first release.
ts2012 30/30 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2007 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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